• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.11
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• pp.765-770
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• 2001

Metal-ferroelectric-insulator- semiconductor(MFTS) devices by using rapid thermal annealed (RTA) LiNbO$_3$/AIN/Si(100) structures were successfully fabricated and demonstrated nonvolatile memory operations. Metal-insulator-semiconductor(MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2 V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/$\textrm{cm}^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8 V, 50 % duty cycle) in the 500 kHz.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.20.1-20.1
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• 2011

The nano-sized quantum structure has been an attractive candidate for investigations of the fundamental physical properties and potential applications of next-generation electronic devices. Metal nano-particles form deep quantum wells between control and tunnel oxides due to a difference in work functions. The charge storage capacity of nanoparticles has led to their use in the development of nano-floating gate memory (NFGM) devices. When compared with conventional floating gate memory devices, NFGM devices offer a number of advantages that have attracted a great deal of attention: a greater inherent scalability, better endurance, a faster write/erase speed, and more processes that are compatible with conventional silicon processes. To improve the performance of NFGM, metal nanocrystals such as Au, Ag, Ni Pt, and W have been proposed due to superior density, a strong coupling with the conduction channel, a wide range of work function selectivity, and a small energy perturbation. In the present study, bismuth metal nanocrystals were self-assembled within high-k $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN) films grown at room temperature in Ar ambient via radio-frequency magnetron sputtering. The work function of the bismuth metal nanocrystals (4.34 eV) was important for nanocrystal-based nonvolatile memory (NVM) applications. If transparent NFGM devices can be integrated with transparent solar cells, non-volatile memory fields will open a new platform for flexible electron devices.

• Journal of the Korean Society of Food Culture
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• v.12 no.1
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• pp.53-61
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• 1997

This study was carried out in order to investigate general characteristics, sugars and organic acids contents of Korean traditional soy sauce, and to find out possibility of high quality soy sauce production in a short period through high concentration soy sauce making. In this study, we prepared three different types of soy sauce, low concentration soy sauce (Chungjang), high concentration soy sauce and Kyupjang, high quality traditional Korean soy sauce. pH of soy sauce were $4.46{\sim}4.90$ and did not show difference among three samples. Titratable acidity, buffering power and total free acid content were the highest value in Kyupjang. Kyupjang showed the highest contents of salt and pure extract. As the ripening period increased, the salt content increased in Chungjang samples, but decreased in Kyupjang. Reducing sugar contents of Kyupjang, high concentration soy sauce and low concentration soy sauce were 1.13%, 0.76% and 0.53%, respectively. Free sugar in soy sauce were analyzed maltose, glucose, galactose and fructose. Total free sugar content was highest in high concentration soy sauce, however, contents of glucose and fructose were higher in Kyupjang than in Chungjang samples. Galactose was the main free sugar in Chungjang, but glucose was in Kyupjang. Among identified volatile organic acid, acetic acid was present in the highest concentration, and volatile organic acid content was highest in the high concentration soy sauce at 150 days. 20 nonvolatile organic acids were detected in Korean traditional soy sauce. Succinic acid, lactic acid and 2,5-pyridine dicarboxylic acid were the main nonvolatile organic acid in soy sauce.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.243.1-243.1
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• 2011

We demonstrate a facile and robust layer-by-layer (LbL) assembly method for the fabrication of nonvolatile resistive switching memory (NRSM) devices based on superparamagnetic nanocomposite multilayers, which allows the highly enhanced magnetic and resistive switching memory properties as well as the dense and homogeneous adsorption of nanoparticles, via nucleophilic substitution reaction (NSR) in nonpolar solvent. Superparamagnetic iron oxide nanoparticles (MP) of about size 12 nm (or 7 nm) synthesized with oleic acid (OA) in nonpolar solvent could be converted into 2-bromo-2-methylpropionic acid (BMPA)-stabilized iron oxide nanoparticles (BMPA-MP) by stabilizer exchange without change of solvent polarity. In addition, bromo groups of BMPA-MP could be connected with highly branched amine groups of poly (amidoamine) dendrimer (PAMA) in ethanol by NSR of between bromo and amine groups. Based on these results, nanocomposite multilayers using LbL assembly could be fabricated in nonpolar solvent by NSR of between BMPA-MP and PAMA without any additional phase transfer of MP for conventional LbL assembly. These resulting superparamagnetic multilayers displayed highly improved magnetic and resistive switching memory properties in comparison with those of multilayers based on water-dispersible MP. Furthermore, NRSM devices, which were fabricated by LbL assembly method under atmospheric conditions, exhibited the outstanding performances such as long-term stability, fast switching speed and high ON/OFF ratio comparable to that of conventional inorganic NRSM devices produced by vacuum deposition.

• Transactions on Electrical and Electronic Materials
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• v.4 no.2
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• pp.29-34
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• 2003

Ferroelectric YMnO$_3$ thin films were etched with Ar/C1$_2$ and CF$_4$/C1$_2$ Plasma. The maximum etch rate of YMnO$_3$ thin film was 300 $\AA$/min at a Cl$_2$/Ar gas mixing ratio of 8/2, an RF power of 800 W, a do bias of-200 V, a chamber pressure of 15 mTorr, and a substrate temperature of 3$0^{\circ}C$. From the X-ray photoelectron spectroscopy (XPS) analysis, yttrium was not only etched by chemical reactions with Cl atoms, but also assisted by Ar ion bombardments in Ar/C1$_2$ plasma. In CF$_4$/C1$_2$ plasma, yttrium formed nonvolatile YF$_{x}$ compounds and remained on and the etched surface of YMnO$_3$. Manganese etched effectively by forming volatile MnCl$_{x}$ and MnF$_{y}$. From the X-ray diffraction (XRD) analysis, the (0004) diffraction peak intensity of the YMnO$_3$ thin film etched in Ar/Cl$_2$ plasma shows lower than that in CF$_4$/Cl$_2$ plasma. It indicates that the crystallinty of the YMnO$_3$ thin film is more easily damaged by the Af ion bombardment than the changes of stoichiometry due to nonvolatile etch by-products.cts.s.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.11 no.2
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• pp.65-83
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• 1978

This study was attempted to evaluate the taste of broiled-dried sea mussel which is a traditional dried Sea food in Korea. The contents of such compounds as free amino acids, nucleotides and their related compounds, TMAO, betaine, and nonvolatile organic acids were analysed. From the results of analysis of nucleotides, the contents of AMP and ADP in broiled-dried Mytilus coruscus and Mytilus edulis appeared higher than other nucleotides and tended to increase slightly after cooking, drying, and storage which might be due to both their stability and the addition of degradation of nucleic acids during cooking. In the free amino acid composition of fresh samples abundant amino were taurine, glycine, serine, glutamic acid, alanine, arginine, threonine, tyrosine, lysine and valine in order. Such amino acids as histidine, leucine, methionine and isoleucine were poor and both proline and phenylalanine were merely trace. The free amino acid composition in the extract of Mytilus corucus and Mytilus edulis after broil-drying was not changed. These amino acids, taurine, glycine, feline, glutamic acid, alanine and arginine were abundant in dried samples as well as in the fresh. The total free amino acid was greatly reduced after cooking and drying ranging from $76.3\%$ to $79.7\%$ loss to that of tile fresh. The content of betaine shelved the same tendency as in total free amino acid while TMA slightly increased relating to TMAO decrease during broil-frying. Such nonvolatile organic acids as succinic, lactic, malic and fumaric acid were abundant in both fresh and broiled-dried samples whereas oxalic and pyruvic acid were poor. It is found that the taste compounds of broiled-dried Mytilus coruscus and Mytilus edulis were composed of amino acids as glycine, serine, alanine, glutamic acid, arginine, and betaine, TMAO, ADP, AMP, and organic acids such as succinic acid, lactic acid, malic acid and fumaric acid. No significant differences in the taste compounds between male and female as well as between Mytilus coruscus and Mytilus edulis was not observed.

• Journal of KIISE:Computing Practices and Letters
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• v.16 no.3
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• pp.336-340
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• 2010

Flash storages are prevalent as portable storage in computing systems. When we consider the detachability of Flash storage devices, data integrity becomes an important issue. To assure extreme data integrity, file systems synchronously write all file data to storage accompanying hot write references. In this study, we concentrate on the effect of hot write references on Flash storage, and we consider the effect of absorbing the hot write references via nonvolatile write cache on the performance of the FTL schemes in Flash storage. In 80 doing, we quantify the performance of typical FTL schemes for workloads that contain hot write references through a wide range of experiments on a real system environment. Through the results, we conclude that the impact of the underlying FTL schemes on the performance of Flash storage is dramatically reduced by absorbing the hot write references via nonvolatile write cache.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35{\mu}m$ Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by $0.35{\mu}m$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and $Si_{2}NO$ species near the new $Si-SiO_{2}$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the $Si-SiO_{2}$ interface and contributed to electron trap generation.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.42 no.5
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• pp.975-981
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• 2017

In this paper, we propose a method for efficient use of energy when using flash device in WSN environment. Typical Flash devices have a drawback to be an energy efficient storage media in the energy-constrained WSNs due to the high standby energy. An energy efficient approach to deploy Flash devices into WSNs is simply turning the Flash device off whenever idle. In this regard, we make the simple but ideal approach realistic by removing these two obstacles by exploiting nonvolatile RAM (NVRAM), which is an emerging memory technology that provides both non-volatility and byte-addressability. Specifically, we make use of NVRAM as an extension of metadata storage to remove the FTL metadata scanning process that mainly incurs the two obstacles. Through the implementation and evaluation in a real system environment, we verify that significant energy savings without sacrificing I/O performance are feasible in WSNs by turning off the Flash device exploiting NVRAM whenever it becomes idle. Experimental results show that the proposed method consumes only about 1.087% energy compared to the conventional storage device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.6
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• pp.449-453
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• 2003

Ferroelectric YMnO$_3$ thin films were etched with Ar/Cl$_2$ and CF$_4$/Cl$_2$ inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$ thin film was 300 $\AA$/min at a Ar/Cl$_2$ gas mixing ratio of 2/8, a RF power of 800 W, a DE bias of 200 V, a chamber pressure of 15 mTorr, and a substrate temperature of 30 $^{\circ}C$. From the X-ray photoelectron spectroscopy (XPS) analysis, yttrium etched by chemical reactions with Cl radicals assisted by Ar ion bombardments in Ar/Cl$_2$ plasma. In CF$_4$/Cl$_2$ plasma, yttrium are remained on the etched surface of YMnO$_3$ and formed of nonvolatile YF$_{x}$ compounds manganese etched effectively by chemical reactions with Cl and F radicals. From the X-ray diffraction (XRD) analysis, the (0004) diffraction peak intensity of the YMnO$_3$ thin film etched in Ar/Cl$_2$ plasma shows lower value than that in CF$_4$/Cl$_2$ plasma. It indicates that the crystallinty of YMnO$_3$ thin film is more easily damaged by the Ar ion bombardment than the changes of stoichiometry due to nonvolatile etch by-products.s.