• 한국전기화학회:학술대회논문집
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• 1999.10a
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• pp.8-8
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• 1999

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.98.2-98.2
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• 2010

$CuInS_2$ thin films were synthesized by sulfurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}$ [$cm^{-3}$], 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}$ [${\Omega}{\cdot}cm$], respectively.

• Journal of the Korean Electrochemical Society
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• v.3 no.2
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• pp.72-75
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• 2000

For the purpose of developing the non-stoichiometric Zr-based Laves phase alloy with higher capacity and better performance for electrochemical application, extensive work has been carried out in KAIST. After careful alloy design of $ZrMn_2-based$ hydrogen storage alloys through varing their stoichiometry while susbstituting or adding some alloying elements, the $Zr-Ti-(Lh-V-Ni)_{2.2},\;Zr-Ti-(Mn-V-Cr-Ni)_{1.8\pm0.1}$ with high capacity and better performance was developed. Consequently the $Zr-Ti-(Mn-V-Ni)_{2.2}$ alloy has a high discharge capacity of 394mAh/g and shows a high rate capability equaling to that of commercialized $AB_5$ type alloys. On the other hand, in order to develop the hydrogen storage alloy with higher discharge capacity, the hypo-stoichiometric $Zr(Mn-V-Ni)_{2-\alpha}$ alloys substituted by Ti are under developing. As the result of competitive roles of Ti and $stocihiometry({\alpha})$, the discharge capacity of $Zr-Ti-(Mn-V-Cr-Ni)_{l.8\pm0.1}$ alloys is about 400mAh/g(410 mAh/g, which shows the highest level of performance in the Zr-based alloy developed. Our sequential endeavor is improving the shortcoming of Zr-based Laves phase alloy for commercialization, i.e., poor activation property and low rate capability, etc. It is therefore believed that the commercialization of Zr-based Laves phase hydrogen storage alloy for Ni-MH rechargeable battery is in near future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.15-17
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• 2008

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, 312.502[$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.261-262
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• 2006

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1:1:2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.331-332
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• 2008

Couplings between electric, magnetic, and structural order parameters result in the so-called multiferroic phenomena with two or more ferroic phenomena such as ferroelectricity, ferromagnetism, or ferroelasticity. The simultaneous ferroelectricity and ferromagnetism (magnetoelectricity) permits potential applications in information storage, spintronics, and magnetic or electric field sensors. The perovskite BiFeO3(BFO) is known to be antiferromagnetic below the Neel temperature of 647K and ferroelectric with a high Curie temperature of 1043K. It exhibits weak magnetism at room temperature due to the residual moment from a canted spin structure. It is likely that non-stoichiometry and second-phase formation are the factors responsible for leakage current in BFO. It has been suggested that oxygen non-stoichiometry leads to valence fluctuations of Fe ions in BFO, resulting in high conductivity. To reduce the large leakage current of BFO, one attempt is to make donor-doped BFO compounds and thin films. In this study, (Bi1-x,Ndx)(Fe1-y,Tiy)O3 thin films have been deposited on Pt(111)/TiO2/SiO2/Si substrates by pulsed laser deposition. The effect of dopants on the phase evolution and surface morphology are analyzed. Furthermore, electrical and magnetic properties are measured and their coupling characteristics are discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.68-70
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• 2006

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200 [$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1:1:2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, $312.502[cm^2/V{\cdot}s]$ and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• Journal of the Korean Ceramic Society
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• v.42 no.9 s.280
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• pp.613-617
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• 2005

We present the results of a combined magnetization, dc and magneto-transport study of the n = 2 Ruddlesden-Popper compound $Ca_3Mn_2O_7$ The negative thermoelectric powder is observed. The magnetic measurement data show that there is sharp magnetic transition at 134 K. However, the de and magnetoresistance of $Ca_3Mn_2O_7$ show no particular transport. Transport properties of the compound $Ca_3Mn_2O_7$ are interpreted in terms of activated hopping of small polarons in non-adiabatic regime. Polarons are most probably formed around $Mn^{3+}$ sites created by oxygen sub-stoichiometry.

• Journal of the Korean Ceramic Society
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• v.17 no.2
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• pp.89-95
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• 1980

The effect of non-stoichimetry and sintering temperature on the magnetic properties of materials in the system $Ni_{0.39}Zn_{0.61}Fe_{2.0+x}O_4$ have been investigated. The value of x used in initial weighing of oxides were varied from -0.04 to -0.12. The value of x, however, appears to be from +0.04 to -0.04 after ferrite powder preparation due to iron pick up during ball mill mixing and grinding. The densities of specimens which were deficientinrion were higher than those with excess ion. Specimens with near stoichiometric composition showed maximum initial permeability an dminimum coercivity whereas high values of quality factor (Q) were observed in iron deficient specimens. The quality factor decreased monotonically with increasing sintering temperature, but the permeability showed maxima with increasing sintering temperature. Thus highest value of figure of merit $\mu$Q was obtained in composition $Ni_{0.39}Zn_{0.61}Fe_{1.98O4}$ sintered at 100$0^{\circ}C$ for 3 hrs. in an air atmosphere.

• Journal of Powder Materials
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• v.10 no.6
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• pp.390-394
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• 2003

Ultra fine titanium carbide particles were synthesized by novel metallic thermo-reduction process. The vaporized TiC1$_4$+$CCl_4$ gases were reacted with liquid magnesium and the fine titanium carbide particles were then produced by combining the released titanium and carbon atoms. The vacuum treatment was followed to remove the residual phases of MgC1$_2$ and excess Mg. The stoichiometry, microstructure, fixed and carbon contents and lattice parameter were investigated in titanium carbide powders produced in various reaction parameters.