• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.782-783
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• 2006

Titinium carbide $(TiC_x)$ was produced by self-propagating high temperature synthesis (SHS) method. The morphology and non-stoichiometric number of the SHS product were observed by scanning electron microscopy and neutron diffractometry, respectively. Tubular titanium carbide with hole inside was formed with different non-stoichiometric number (x), which value increased with combustion temperature.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.156-161
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• 1998

We have measured changes of the non-stoichiometry, $\Delta\delta$, in Fe-doped nicked oxide , by thermogravimetry for four iron fractions, x=0.01, 0.031, 0.057 and 0.10, and three temperatures, T=1273, 1373 and 1473 K. The obtained data can be modelled by a defect structure in which substitutional trivalent iron ions, FeNi, are compensated by cation vacancies, $V_{Ni}$", and (4:1)-clusters. These clusters consist of tetravalent interstitial iron, $Fe_i\;^4$

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.5B no.2
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• pp.118-122
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• 2005

Electro-chemo-mechanical devices or artificial muscles based on conducting polymers (CP) are presented as bilayers, CP/adhesive polymer, or as triple layers, CP/adhesive polymer/CP. Those soft and wet materials, working in aqueous solutions of a salt, mimic the composition of most organs from animals. Under electrochemical control, so working as new electrical machines, they produce continuous, reverse and elegant bending movements, mimicking those produce by animal muscles. By means of the current a perfect controls of the movement rate is attained giving soft and continuous movements. Muscles able to sense the chemical and mechanical conditions of work or muscle having tactile sense, as will be presented here, are being developed. All of them are founded on the non-stoichiometric nature of the soft and wet materials.

• Bulletin of the Korean Chemical Society
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• v.21 no.7
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• pp.685-689
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• 2000

The complexation reaction between Pb2+,TI and Cd2+ions and macrocyclic ligands, 18-crown-6 ( 18C6) and dibenzo- 18-crown-6 (DB 18C6), was studied in dimethylsulfoxide (DMSO)-nitromethane (NM) and dimethyl-formamide (DMF)-nitromethane binary system s by square wave polarography (SWP) technique. The stoichiometry and stability of the complexes were determined by monitoring the shifts in half-waves or peak potentials of the polarographic waves of metal ions against the Iigand concentration. In most cases, the stability constants of complexes increase with increasing amounts of the nitromethane in mixed binary solvents used in this study. The complexes formed between 18C6 and DB18C6 and these metal cations in all cases had a stoichiometry of 1 : 1. The results obtained show that there is an inverse relationship between the formation constant of complexes and the donor number of solvents based on a Gatmann donocity scale and the stability constants show a high sensitivity to the composition of the mixed solvent systems. A linear behavior was observed for variation of log Kf of I8C6 complexes vs the composition of the mixed solvent systems in NM/DMSO and NM/DMF,but a non-linear behavior was observed in the case of DB 18C6 complexes in these binary systems. In most of the systems investigated, the Pb2+ cation forms a more stable complex with the 18C6 than other two cations and the order of selectivity of this Iigand for cations is: Pb2+ > TI+,Cd2+.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.594-599
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• 2007

[ $CulnS_2$ ] thin films were synthesized by sulfurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature $200^{\circ}C$. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the annealed $200^{\circ}C$ of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and Hall measurement system. The compositional deviations from the ideal chemical formula for $200^{\circ}C$ material can be conveniently described by non-molecularity$({\Delta}x=[Cu/In]-1)$ and non-stoichiometry $({\Delta}y=[{2S/(Cu+3In)}-1])$. The variation of ${\Delta}x$ would lead to the formation of equal number of donor and accepters and the films would behave like a compensated material. The ${\Delta}y$ parameter is related to the electronic defects and would determine the type of the majority charge carriers. Films with ${\Delta}y>0$ would behave as p-type material while ${\Delta}y<0$ would show n-type conductivity. At the sane time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}cm^{-3},\;312.502cm^2/V{\cdot}s\;and\;2.36{\times}10^{-2}\;{\Omega}{\cdot}cm$, respectively.

• Current Applied Physics
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• v.18 no.12
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• pp.1577-1582
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• 2018

While controlling the cation contents in perovskite rare-earth nickelate thin films, a metal-to-insulator phase transition is reported. Systematic control of cation stoichiometry has been achieved by manipulating the irradiation of excimer laser in pulsed laser deposition. Two rare-earth nickelate bilayer thin-film heterostructures with the controlled cation stoichiometry (i.e. stoichiometric and Ni-excessive) have been fabricated. It is found that the Ni-excessive nickelate film is structurally less dense than the stoichiometric film, albeit both of them are epitaxial and coherent with respect to the underlying substrate. More interestingly, as a temperature decreases, a metal-to-insulator transition is only observed in the Ni-excessive nickelate films, which can be associated with the enhanced disproportionation of the Ni charge valence. Based on our theoretical results, possible origins (e.g. anti-site defects) of the low-temperature insulating state are discussed with the need of future work for deeper understanding. Our work can be utilized to realize unusual physical phenomena (e.g. metal-to-insulator phase transitions) in complex oxide films by manipulating the chemical stoichiometry in pulsed laser deposition.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2018.11a
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• pp.598-599
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• 2018

• Journal of Advanced Marine Engineering and Technology
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• v.30 no.2
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• pp.225-230
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• 2006

This study investigates drying condition when a small fan is added to a operating the free-breathing proton exchange membrane fuel cells (PEMFCs) with dry $H_2$ and Air. Polarization tests were conducted on PEMFCs at cell temperatures between 30 and $50^{\circ}C$ under dry operation. In the results, the cell performance strongly depended on the cell temperature and the cathode gas stoichiometric flow rates. The cell performance increases as cell temperature decreases from 50 to $30^{\circ}C$. In the domain where the stoichiometry of air is quite large, reduction of the concentration overpotential compensated the increased internal resistance due to drying. The maximum performance was obtained at the small air flow rate beyond which flooding occurs. This indicates that the fan should be operated in the stoichiometry domain with a well designed cell structure to avoid flooding.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.326-329
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• 2007

$CuInS_{2}$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_{2}$ thin films with non-stoichiometry composition. $CuInS_{2}$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/ln/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and Hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}$ [$cm^{-3}$], 312.502 [$cm^{2}/V{\cdot}s$] and $2.36{\times}10^{-2}$ [${\Omega}{\cdot}cm$], respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.231-232
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• 2008

The coupling between electric, magnetic, and structural order parameters results in the so-called multiferroics, which possess ferroelectricity, ferromagnetism, and/or ferroelasticity. The simultaneous ferroelectricity and ferromagnetism (magnetoelectricity) allow potential applications in information storage, spintronics, and in magnetic or electric field sensors. Perovskite compound $BiFeO_3$ (BFO) is antiferromagnetic below Neel temperature of 647K and ferroelectric with a high Curie temperature of 1043K. It exhibits weak magnetism at room temperature(RT) due to the residual moment from a canted spin structure. It is likely that non-stoichiometry and second-phase formation are the factors which cause leakage in BFO. It has been suggested that oxygen non-stoichiometry leads to valence fluctuations of Fe ions in BFO, resulting in high conductivity. To reduce the large leakage current of BFO, one attempt is fabricating donor doped BFO compounds and thin films. We report here the successful fabrication of the Nd, Ti co-doped $BiFeO_3$ ceramics and thin films by pulsed laser deposition technique.