• Transactions on Electrical and Electronic Materials
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• 제8권6호
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• pp.234-240
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• 2007

The electrical properties and dc aging behavior for specified stress state of system, which is composed of quaternary Zn-Pr-Co-Cr, were investigated for different $Dy_2O_3$ addition doping level. As $Dy_2O_3$ doping level increased, the density decreased in the range of 5.51-4.90 $g/cm^3$, reaching maximum at 0.5 mol% and the average ZnO grain size decreased in the range of 17.7-6.0 ${\mu}m$. The incorporation of $Dy_2O_3$ significantly improved the non-ohmic properties, above 30 in non-ohmic coefficient, compared with that of undoped samples. The samples with the best performance of non-ohmic properties were obtained for $Dy_2O_3$ doping level of 1.0 mol%, with 49 in non-ohmic coefficient and 2.6 ${\mu}A/cm^2$ in leakage current. The samples with the highest stability were obtained for $Dy_2O_3$ doping level of 0.5 mol%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.955-958
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• 2001

The structure characteristics of varistor of Zn oxide to depend on the breakdown voltage has been investigated to annealing condition by additive material of Sb$_2$O$_3$ system. The breakdown voltage that has not doping Sb$_2$O$_3$ was 235[V]. ZnO varistors was shown ohmic properties when it's applied voltage was below critical voltage. It was shown non-ohmic properties over critical voltage, because current was increased with decreasing resistance. High voltage ZnO varistors had high breakdown voltage, but it had bad electrical stability with various surge. Sb$_2$O$_3$was increased non-linear coefficient in ZnO varistors grain boundary.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.373-376
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• 2001

When varistors for circuit protection is used at high voltage, it's operation properties were unstable because of leakage current and nonlinear coefficient with grain size. For the purpose of improving of ZnO varistor properties, high voltage ZnO varistor was fabricated with Y$_2$O$_3$addition. Electrical properties were investigated according to sintering conditions and mixing conditions. ZnO varistors was shown ohmic Properties when it's applied voltage was below critical voltage. It was shown non-ohmic properties over critical voltage, because current was increased with decreasing resistance.

• Journal of Magnetics
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• 제21권1호
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• pp.153-158
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• 2016

This paper aims to discuss the Non Darcy boundary layer flow of non-conducting viscous fluid with magnetic ferroparticles over a permeable linearly stretching surface with ohmic dissipation and mixed convective heat transfer. A magnetic dipole is applied "a" distance below the surface of stretching sheet. The governing equations are modeled. Similarity transformation is used to convert the system of partial differential equations to a system of non-linear but ordinary differential equations. The ODEs are solved numerically. The effects of sundry parameters on the flow properties like velocity, pressure, skin-friction coefficient and Nusselt number are presented. It is deduced the frictional resistance of Lorentz force decreases with stronger electric field and the trend reverses for temperature. Skin friction coefficient increase with increase in ferromagnetic interaction parameter. Whereas, Nusselt number decrease.

• Transactions on Electrical and Electronic Materials
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• 제15권5호
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• pp.284-289
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• 2014

The effects of additives (Nb, Bi and Cr) on the microstructure, varistor properties, and aging behavior of V/Mn/Co/ La/Dy co-doped zinc oxide ceramics were systematically investigated. An analysis of the microstructure showed that all of the ceramics that were modified with various additives were composed of zinc oxide grain as the main phase, and secondary phases such as $Zn_3(VO_4)_2$, $ZnV_2O_4$, and $DyVO_4$. The $Bi_2O_3$-modified samples exhibited the lowest density, the $Nb_2O_5$-modified sample exhibited the largest average grain size, and the $Cr_2O_3$-modified samples exhibited the highest breakdown field. All additives improved the non-ohmic coefficient (${\alpha}$) by either a small or a large margin, and in particular an $Nb_2O_5$ additive noticeably increased the non-ohmic coefficient to be as large as 36. The $Bi_2O_3$-modified samples exhibited the highest stability with variation rates for the breakdown field and for the non-ohmic coefficient (${\alpha}$) of -1.2% and -26.3%, respectively, after application of a DC accelerated aging stress of 0.85 EB/$85^{\circ}C$/24 h.

• 전기학회논문지
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• 제65권10호
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• pp.1697-1701
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• 2016

The leakage conduction and critical voltage characteristic of ZnO ceramic were investigated as a function of $Sb_2O_3$ concentration. Leakage conduction in the ohmic region increased with increasing $Sb_2O_3$ concentration and was attributed to the potential barrier height. The nonlinear coefficient increased with an increasing amount of $Sb_2O_3$. It was found that increases in the apparent critical voltages were associated with the lowered donor concentration in the grain boundary of between two ZnO grains. And the decrease of donor concentration on doping with $Sb_2O_3$ additive was attributed to the lowered capacitance in the grain boundary layer.

• 한국산학기술학회논문지
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• 제19권8호
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• pp.14-18
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• 2018

일반적으로 반도체소자의 이동도를 높이기 위하여 반도체소자에서 옴접촉이 중요하게 다루어진다. 반도체 구조의 PN접합은 공핍층을 포함하고 있으며, 공핍층은 전기적인 비선형을 유도하고 쇼키접압을 만들어내는 반도체 고유의 물리적인 특징이다. 본 연구에서는 절연막이 전도성에 미치는 효과를 조사하기 위해서 $SiO_2$ 박막과 $V_2O_5/SiO_2$ 박막의 전기적인 특성을 비교하여 조사하였다. 미소전계영역에서 $SiO_2$ 절연막의 전기적인 특성으로부터 비선형 쇼키접합을 이루고 있는 것을 확인하였으며, 그 위에 증착된 $V_2O_5$ 박막은 오믹특성을 갖는 것을 확인하였다. 절연막의 PN 접합에 의한 쇼키접합 특성이 누설전류를 차단하여 $V_2O_5$ 박막의 전도성을 우수하게 만들었다. 양의 전압에서 $SiO_2$ 박막의 커패시턴스 값은 매우 낮았으나 $V_2O_5$ 박막의 커패시턴스 값은 전압이 증가할수록 증가하였다. 일반적인 전계영역에서 $SiO_2$ 박막의 절연 효과에 의해 $V_2O_5$ 박막의 전도성이 증가하는 것을 확인하였다. 절연박막은 공핍층의 효과를 이용하는 쇼키접합을 갖게 되며, 반도체에서의 쇼키접합은 전도성을 높이는 효과가 있는 것을 확인하였다.

• 한국수소및신에너지학회논문집
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• 제35권1호
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• pp.48-55
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• 2024

The electrochemically active site of mixed ionic and electronic conductor (MIEC) as a cathode material is restricted to the triple phase boundary in protonic ceramic fuel cells (PCFCs) due to the insufficient of proton-conducting properties of MIEC. This study primarily focused on expanding the electrochemically active site by La_0.6Sr_0.4Co_0.2Fe_0.8O_3-δ(LSCF6428)-BaZr_0.4Ce_0.4Y_0.1Yb_0.1O_3-δ (BZCYYb4411) composite cathode. The electrochemical properties of the composite cathode were evaluated using anode-supported PCFC single cells. In comparison to the LSCF6428 cathode, the peak power density of the LSCF6428-BZCYYb4411 composite cathode is much enhanced by the reduction in both ohmic and non-ohmic resistance, possibly due to the increased electrochemically active site.

• 한국재료학회지
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• 제30권10호
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• pp.502-508
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• 2020

This paper focuses on the electrical properties and stability against DC accelerated aging stress of ZnO-V₂O₅-MnO₂-Nb₂O₅-Bi₂O₃-Co₃O₄-Dy₂O₃ (ZVMNBCD) varistor ceramics sintered at 850 - 925 ℃. With the increase of sintering temperature, the average grain size increases from 4.4 to 11.8 mm, and the density of the sintered pellets decreases from 5.53 to 5.40 g/㎤ due to the volatility of V₂O₅, which has a low melting point. The breakdown field abruptly decreases from 8016 to 1,715 V/cm with the increase of the sintering temperature. The maximum non-ohmic coefficient (59) is obtained when the sample is sintered at 875 ℃. The samples sintered at below 900 ℃ exhibit a relatively low leakage current, less than 60 mA/㎠. The apparent dielectric constant increases due to the increase of the average grain size with the increase of the sintering temperature. The change tendency of dissipation factor at 1 kHz according to the sintering temperature coincides with the tendency of the leakage current. In terms of stability, the samples sintered at 900 ℃ exhibit both high non-ohmic coefficient (45) and excellent stability, 0.8% in 𝚫E_B/E_B and -0.7 % in 𝚫α/α after application of DC accelerated aging stress (0.85 E_B/85 ℃/24 h).

• 반도체디스플레이기술학회지
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• 제17권4호
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• pp.66-69
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• 2018

This study was researched the electrical properties of semiconductor devices such as ITO, $SiO_2$, $V_2O_5$ thin films. The films of ITO, $SiO_2$, $V_2O_5$ were deposited by the rf magnetron sputtering system with mixed gases of oxygen and argon to generate the plasma. All samples were cleaned before deposition and prepared the metal electrodes to research the current-voltage properties. The electrical characteristics of semiconductors depends on the interface's properties at the junction. There are two kinds of junctions such as ohmic and schottky contacts in the semiconductors. In this study, the ITO thin film was shown the ohmic contact properties as the linear current-voltage curves, and the electrical characteristics of $SiO_2$ and $V_2O_5$ films were shown the non-linear current-voltage curves as the schottky contacts. It was confirmed that the electronic system with schottky contacts enhanced the electronic flow owing to the increment of efficiency and increased the conductivity. The schottky contact was only defined special characteristics at the semiconductor and the interface depletion layer at the junction made the schottky contact which has the effect of leakage current cutoff. Consequently the semiconductor device with shottky contact increased the electronic current flow, in spite of depletion of carriers.