• Journal of the Korean Ceramic Society
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• v.41 no.1
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• pp.45-50
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• 2004

Hydroxyapatite (HA) ceramics with the Ca/P ratios of 1.62, 1.67 and 1.72 were prepared and their dissolution behaviors in distilled water at $37^{\circ}C$ were investigated. It appeared that surface dissolution of the ceramics was initiated from grain boundaries after 3 days of immersion in water. Following 10 days of immersion, microstructural disintergration of HA was severs for non-stoichiometric compounds, I.e Ca/P ratios of 1.62 and 1.72. Notably, a micron-sized circular cavity similar to lacunae, which can be generally formed in osteoclastic resorption process, was observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.326-326
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• 2008

일반적인 고상반응법을 이용하여 $Eu^{2+}$ 활성화 $\alpha$-sialon 황색 형광체를 합성한 후 구조 및 광학특성을 측정하였다. $Ca^{2+}$와 $Si^{4+}$ 이온의 비화학양론적 첨가에 따른 광학 특성 측정결과, 중심 발광 파장이 약 585 nm 인 높은 휘도의 황색형광체를 얻을 수 있었다. 본 연구에서는 $Ca^{2+}:Si^{4+}$ 첨가비에 따른 광학특성 변화를 관찰하였으며, 이를 바탕으로 구조 및 미세구조 변화에 대한 연구를 수행하였다. 20 mol%의 Al deficient 조성을 갖는 형광체의 광학특성 측정결과 화학양론조성에 비해 20% 이상의 휘도향상을 나타내었다. 이와 같은 결과로부터, 본 연구에서 제시된 Al deficient $\alpha$-sialon 황색 형광체는 자외선 및 청색 LED용 형광체로 적합할 것으로 판단된다.

• Journal of the Korean Chemical Society
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• v.19 no.2
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• pp.104-115
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• 1975

The electrochemical reduction of iodine in non-aqueous media have been studied by polarography, chronopotentiometry, cyclic voltammetry and controlled potential coulometry at dropping mercury electrode and platinum, gold and amalgamated platium electrodes. In amphiprotic solvents such as methanol, ethanol, isopropanol and pyridine, iodine were reduced to iodide ions via one step reduction involving 1 electron and in aprotic solvents such as acetonitrile, dimethylformamide and dimethylsulfoxide via two step reduction involving all 3 electrons. The reductions of iodine give well defined polarograms at dropping mercury electrode and irreversible chronopotentiograms at platinum electrode, but less defined irreversible chronopotentiograms at gold and amalgamated platinum electrodes, those are all diffusion controlled. The diffusion coefficients of iodine in various solvents were estimated from the chronopotentiometric data and Sand equation.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.228.2-228.2
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• 2015

We have developed a TOF-MEIS system using 70~100 keV He+. A TOF-MEIS system was designed and constructed to minimize the ion beam damage effect by utilizing a pulsed ion beam with a pulse width < 1 ns and a TOF delay-line-detector with an 120 mm diameter and a time resolution of 180 ps. The TOF-MEIS is an useful tool for interfacial analysis of the composition and structure of nano and bio systems. Our recent applications are reported. We investigated the effect with Polyaspartic Acid (pAsp) and Osteocalcin on the initial bone growth of calcium hydroxyl appatite on a carboxyl terminated surface. When pAsp is not added to the self-assembled monolayers of Ca 2mM with Phosphate 1.2 mM, the growth procedure of calcium hydroxyl appatite cannot be monitored due to its rapid growth. When pAsp is added to the SAMs, the initial grow stage of the Ca-P can be monitored so that the chemical composition and their nucleus size can be analyzed. Firstly discovered the existence of 1-nm-sized abnormal calcium-rich clusters (Ca/P ~ 3) comprised of three calcium ions and one phosphate ion. First-principles studies demonstrated that the clusters can be stabilized through the passivation of the non-collagenous-protein mimicking carboxyl-ligands, and it progressively changes their compositional ratio toward that of a bulk phase (Ca/P~1.67) with a concurrent increase in their size to ~2 nm. Moreover, we found that the stoichiometry of the clusters and their growth behavior can be directed by the surrounding proteins, such as osteocalcin.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.6.2-6.2
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• 2009

Nanostructured materials arecurrently receiving much attention because of their unique structural andphysical properties. Research has been stimulated by the envisagedapplications for this new class of materials in electronics, optics, catalysisand magnetic storage since the properties derived from nanometer-scalematerials are not present in either isolated molecules or micrometer-scalesolids. This study presents the experimental results derived fromthe various functional materials processed in nano-scale using pulsed laserablation, since those materials exhibit new physical phenomena caused by thereduction dimensionality. This presentation consists of three mainparts to consider in pulsed laser ablation (PLA) technique; first nanocrystallinefilms, second, nanocolloidal particles in liquid, and third, nanocoating fororganic/inorganic hybridization. Firstly, nanocrystalline films weresynthesized by pulsed laser deposition at various Ar gas pressures withoutsubstrate heating and/or post annealing treatments. From the controlof processng parameters, nanocystalline films of complex oxides and non-oxidematerials have been successfully fabricated. The excellentcapability of pulsed laser ablation for reactive deposition and its ability totransfer the original stoichiometry of the bulk target to the deposited filmsmakes it suitable for the fabrication of various functionalmaterials. Then, pulsed laser ablation in liquid has attracted muchattention as a new technique to prepare nanocolloidal particles. Inthis work, we represent a novel synthetic approach to directly producehighly-dispersed fluorescent colloidal nanoparticles using the PLA from ceramicbulk target in liquid phase without any surfactant. Furthermore, novel methodbased on simultaneous motion tracking of several individual nanoparticles isproposed for the convenient determination of nanoparticle sizedistributions. Finally, we report that the GaAs nanocrystals issynthesized successfully on the surface of PMMA (polymethylmethacrylate)microspheres by modified PLD technique using a particle fluidizationunit. The characteristics of the laser deposited GaAs nanocrytalswere then investigated. It should be noted that this is the first successfultrial to apply the PLD process nanocrystals on spherical polymermatrices. The present process is found to be a promising method fororganic/inorganic hybridization.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.66-79
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• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.200-201
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• 2007

The SBT($SrBi_2Ta_2O_9$) thin films with $Bi_2O_3$ buffer layer were deposited on Pt/Ti/$SiO_2$/Si substrate by R.F. magnetron sputtering method in order to improve the ferroelectric characteristics. In SBT thin films, the deficiency of bismuth during the process due to its volatility results in an obvious non stoichiometry of the films and the presence of secondary phases. $Bi_2O_3$ buffer layer was found to be effective to achieve the low temperature crystallization and improve the ferroelectric properties of SBT thin films. Ferroelectric properties and crystallinities of SBT thin films with various post annealing of $Bi_2O_3$ buffer layer were observed as various annealing temperature, using X-Ray Diffraction (XRD), scanning electron microscopy (SEM), Keithley 237 and HP 4192A Impedance Analyzer.

• The Journal of the Korea institute of electronic communication sciences
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• v.15 no.4
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• pp.665-670
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• 2020

Buffer layer in CIGS thin-film solar cells improves energy conversion efficiency through band alignment between the absorption layer and the window layer. ZnS is a non-toxic II-VI compound semiconductor with direct-transition band gaps and n-conductivity as well as with excellent lattice matching for CIGS absorbent layers. In this study, the structural and optical properties of ZnS thin films, deposited by RF magnetron sputtering method and subsequently performed by the rapid thermal annealing treatment, were investigated for the buffer layer. The zincblende cubic structures along (111), (220), and (311) were shown in all specimens. The rapid thermal annealed specimens at the relatively low temperatures were polycrystalline structure with the wurtzite hexagonal structures along (002). Rapid thermal annealing at high temperatures changed the polycrystalline structure to the single crystal of the zincblende cubic structures. Through the chemical analysis, the zincblende cubic structure was obtained in the specimen with the ratio of Zn/S near stoichiometry. ZnS thin film showed the shifted absorption edge towards the lower wavelength as annealing temperature increased, and the mean optical transmittance in the visible light range increased to 80.40% under 500℃ conditions.