• Title/Summary/Keyword: nitride ceramic materials

검색결과 151건 처리시간 0.029초

Dispersant-Binder Interactions in Aqueous Silicon Nitride Suspensions

  • Paik, Ungyu
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1996년도 제11차 KACG 학술발표회 Crystalline Particle Symposium (CPS)
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    • pp.129-153
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    • 1996
  • In aqueous slurry processing of silicon nitride, the interaction of dispersant and binder on the surface of particles was studied to identify the effect of these additives on ceramic powder processing. Polymethacrylic acid (PMAA) and polyvinyl alcohol (PVA) were used as dispersant and binder, respectively. the adsorption isotherms of PMAA and PVA for the silicon nitride suspension were determined, while the adsorption of PMAA was differentiated in the mixed additive system by ultraviolet spectroscopy. These experiments were done in order to investigate the effect of these organic additives on the physicochemical properties of silicon nitride suspensions. The electrokinetic behavior of silicon nitride was subsequently measured by electrokinetic sonic amplitude (ESA). As PMAA adsorbed onto silicon nitride, the isoelectric point (pHicp) shifted from pH=6.7 to acidic pH, depending on the surface coverage of PMAA. However, adsorption of PVA did not change the pHicp of suspensions, but did decrease the surface potential of silicon nitride moderately. The rheological behavior of silicon nitride suspensions was measured to assess the stability of particles in aqueous media, and was correlated with the electrokinetic behavior and adsorption isotherm data for silicon nitride.

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Synthesis and Properties of CuNx Thin Film for Cu/Ceramics Bonding

  • Chwa, Sang-Ok;Kim, Keun-Soo;Kim, Kwang-Ho
    • The Korean Journal of Ceramics
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    • 제4권3호
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    • pp.222-226
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    • 1998
  • $Cu_3N$ film deposited on silicon oxide substrate by r.f. reactive sputtering technique. Synthesis and properties of copper nitride film were investigated for its possible application to Cu metallization as adhesive interlayer between copper and $SiO_2. Cu_3N$ film was synthesized at the substrate temperature ranging from $100^{\circ}C$ to $200^{\circ}C$ and at nitrogen gas ratio above $X_{N2}=0.4. Cu_3N, CuN_x$, and FGM-structured $Cu/CuN_x$ films prepared in this work passed Scotch-tape test and showed improved adhesion property to silicon oxide substrate compared with Cu film. Electrical resistivity of copper nitride film had a dependency on its lattice constant and was ranged from 10-7 to 10-1 $\Omega$cm. Copper nitride film was, however, unstable when it was annealed at the temperature above $400^{\circ}C$.

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Optimization of Binder Burnout for Reaction Bonded Si3N4 Substrate Fabrication by Tape Casting Method

  • Park, Ji Sook;Lee, Hwa Jun;Ryu, Sung Soo;Lee, Sung Min;Hwang, Hae Jin;Han, Yoon Soo
    • 한국세라믹학회지
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    • 제52권6호
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    • pp.435-440
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    • 2015
  • It is a challenge from an industrial point of view to fabricate silicon nitride substrates with high thermal conductivity and good mechanical properties for power devices from high-purity Si scrap powder by means of thick film processes such as tape casting. We characterize the residual carbon and oxygen content after the binder burnout followed by nitridation as a function of the temperature in the temperature range of $300^{\circ}C-700^{\circ}C$ and the atmosphere in a green tape sample which consists of high-purity Si powder and polymer binders such as polyvinyl butyral and dioctyl phthalate. The optimum condition of binder burnout is suggested in terms of the binder removal temperature and atmosphere. If considering nitridation, the burnout of the organic binder in air compared to that in a nitrogen atmosphere could offer an advantage when fabricating reaction-bonded $Si_3N_4$ substrates for power devices to enable low carbon and oxygen contents in green tape samples.

Effect of Increased Oxygen Content due to Intensive Milling on Phase and Microstructural Development of Silicon Nitride

  • Kim, Hai-Doo;Ellen Y. Sun;Paul F. Becher;Kim, Hyo-Jong;Han, Byung-Dong;Park, Dong-Soo
    • 한국세라믹학회지
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    • 제38권5호
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    • pp.405-411
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    • 2001
  • Compacts of a mixture of fine $\alpha$-Si$_3$N$_4$powders, 6% $Y_2$O$_3$and 1% $Al_2$O$_3$were attrition milled time on phase and microstructural development in silicon nitride ceramics. The sintered surface and the interior showed different behaviors in phase and microstructral developments. Increased oxygen content with increased milling time of powder mixture leads to the formation of Si$_2$$N_2$O phase at temperatures as low as 155$0^{\circ}C$. Si$_2$$N_2$O is stable in the interior of the samples but unstable in the surface region of the specimen sintered at higher temperature. This results in a duplex structure where the interior consists of Si$_2$$N_2$O grains dispersed in $\beta$-Si$_3$N$_4$matrix and a surface which contains only $\beta$-Si$_3$N$_4$. The alpha to beta phase transformation and the microstructural development are shown to be influenced by the formation and decomposition of the Si$_2$$N_2$O.

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The Effect of La-silicon Oxynitride on the Densification of ${Si_3}{N_4}$ Ceramics by Spark Plasma Sintering

  • Cho, Kyeong-Sik;Kim, Sungjin;Beak, Sung-Ho;Park, Heon-Jin;Lee, June-Gunn
    • 한국세라믹학회지
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    • 제38권8호
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    • pp.687-692
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    • 2001
  • Silicon nitride-La-silicon oxynitride ceramics were fabricated by Spark Plasma Sintering (SPS). The density, crystalline phase and microstructure were compared with those obtained by Hot Pressing (HP). The full density was achieved within 40 min by spark plasma sintering at 1$650^{\circ}C$, whereas the same result was required by hot pressing with a dwell time of 500 min at higher temperature. There were some differences in the microstructure and second phases in the sintered ceramics, which are attributed to the rapid densification in the spark plasma sintering. The fine and acicular grain microstructure appeared in spark plasma sintering.

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Formation of Ti-B-N-C Ceramic Composite Materials via a Gas-Solid Phase Reaction

  • Yoon, Su-Jong
    • 한국재료학회지
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    • 제16권1호
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    • pp.50-57
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    • 2006
  • Phase mixtures of Titanium boride, nitride, and carbide powder were produced by the reduction of a mixture of titanium and boron oxides with carbon via a gas-solid phase reaction. Boron oxides produce a vapour phase or decompose to a metal sub-oxide gaseous species when reduced at elevated temperature. The mechanism of BO sub-oxide gas formation from $B_2O_3$ and its subsequent reduction to titanium diboride for the production of uniform size hexagonal platelets is explained. These gaseous phases are critical for the formation of boride, nitride and carbide ceramics. For the production of ceramic phase composite microstructures, the nitrogen partial pressure was the most critical factor. Some calculated equilibrium phase fields has been verified experimentally. The theoretical approach therefore identifies conditions for the formation of phase mixtures. The thermodynamic and kinetic factors that govern the phase constituents are also discussed.

생체모방기술을 이용한 Boron Nitride /PMMA 복합체 제조 (Biomimetic Preparation of Boron Nitride /PMMA Composite)

  • 남경목;이윤주;김보연;권우택;김수룡;신동근;김영희
    • 한국세라믹학회지
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    • 제51권2호
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    • pp.103-106
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    • 2014
  • Nacre is an organic-inorganic composite material; it is composed of $CaCO_3$ platelet and protein. The microstructure of nacre is a matrix that is similar to bricks and mortar. Technology inspired by nature is called biomimetic technology. In this study, to make high thermal conducting ceramic composite materials using biomimetic technology, a porous green body was prepared with BN platelets. PMMA was infiltrated into the porous green body to make a composite. The microstructure of the composite was observed with FESEM, and the thermal properties were measured. The thermal conductivity of the prepared organic-inorganic composite was 4.19 $W/m{\cdot}K$.

배향된 질화규소 휘스커 종자를 함유한 질화규소 세라믹스의 미세구조에 관한 연구 (Microstructural Development of $Si_3N_4$ Ceramics Containing Aligned ${\beta}-Si_3N_4$ Whisker Seeds)

  • 배병찬;박동수;서원찬;방국수;박찬
    • 한국해양공학회지
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    • 제23권5호
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    • pp.32-38
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    • 2009
  • Silicon nitride samples with aligned whisker seeds were prepared with different amounts of yttria and alumina as the sintering additives. Their sintering behaviors and the microstructural developments between $1850^{\circ}C$ and $2050^{\circ}C$ were examined. The sample with larger amount of the sintering additives showed faster densification and grain growth. Even though addition of the aligned whisker seeds slightly retarded densification of silicon nitride, it improved the flexural strength and the fracture toughness. Both the flexural strength and the fracture toughness of silicon nitride with the aligned whisker seeds were increased as the amount of the sintering additives was increased.

제어된 기공을 이용한 질화규소 휘스커의 성장 (Growth of silicon nitride whiskers using tailored pores)

  • 김창삼;한경섭;김신우
    • 한국결정성장학회지
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    • 제15권2호
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    • pp.61-67
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    • 2005
  • 본 연구에서는 질화규소의 소결 과정에서 인위적으로 형성시킨 기공내부에 질화규소의 휘스커를 성장시키는 새로운 방법을 시도하였다. 실험변수로는 기공의 크기, 기공률 및 질소압력을 사용하였다. 기공률이 14vol%와 27vol%로 낮은 경우에는 질화규소 휘스커가 기공내부에 잘 성장되었으나 39vol%와 50vol%로 기공률이 증가된 경우에는 휘스커가 거의 성장하지 않았다. 한편 기공의 크기와 질소압력은 기공내부에 질화규소 휘스커의 성장에 거의 영향을 주지 않았고, 소결과정에 기공 내에 휘스커를 성장시키는 중요한 조건은 고립된 형태의 닫힌 기공을 유지하는 것임을 알았다.