• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.65-65
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• 2003

Chemical mechanical polishing (CMP) is one of the most important processes in recent ULSI (Ultra Large Scale Integrated Circuit) manufacturing technology. Recently, ceria slurries with surfactant have recently been used in STI-CMP,[1] became they have high oxide-to-nitride removal selectivity and widen the processing margin The role of the abrasives, however, on the effect of planarization on STI-CMP is not yet clear. In this study, we investigated how the crystal characteristic affects the planarization efficiency of wafer surface with controlling crystallite size and poly crystalline abrasive size independently.

• Journal of Advanced Marine Engineering and Technology
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• 제34권7호
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• pp.963-970
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• 2010

This study makes an estimate of the laser-assisted machining (LAM) of an economically viable process for manufacturing precision silicon nitride ceramic parts using a high-power diode laser (HPDL). The surface is locally heated by an intense laser source prior to material removal, and the resulting softening and damage of the workpiece surface simplify the machining of the ceramics. The most important advantage of LAM is its ability to produce much better workpiece surface quality compared to conventional machining. Also important are its larger material removal rates and longer tool life. The cutting force and surface temperature were measured on-line using a pyrometer and a dynamometer, respectively. Tool wear, chips and the surface of the workpiece were measured using optical microscopy, and the surface and fractured cross-section of $Si_3N_4$ were measured by SEM. During the LAM process, the cutting force and tool wear were reduced and oxidation of the machined surface was increased according to the increase in the laser power. Moreover, the more the feed rate increased, the more the cutting force and tool wear increased.

• 한국재료학회지
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• 제10권10호
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• pp.703-708
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• 2000

최근에 상용차용 디젤 엔진의 성능 향상을 목적으로 엔진 설계가 급격히 변화되면서 캠 팔로우어(cam follower)와 캠(cam) 사이에 작용하는 접동면 하중의 증가로 접동면에서의 마모가 중요한 문제가 되고 있다. 본 연구에서는 기존의 주절체 및 소결합금 캠 팔로우어에 비해 내마모성이 우수한 세라믹 캠 팔로우어를 개발하였다. 잔류 응력을 완화시켜주는 중간층을 사용하지 않고 질화규소($Si_3N_4$) 팁과 중탄소강을 활성납재를 사용하여 직접 접합후 냉각시키는 과정에서 두 모재의 열팽창계수차에 의한 크라우닝(crowning, R) 이 형성되도록 하였다. 접합에 사용한 중탄소강은 열팽창시 이력(hysteresis) 거동을 나타내었으며, $A_{c1}$ 변태점인 $723^{\circ}C$ 이하에서 접합할 경우 원하는 크라우닝이 형성되었다. 접합온도가 $723^{\circ}C$ 이상이 되면 크라우닝 (R) 값이 온도에 따라 지수함수적으로 증가하였으며 이는 중탄소강의 상변태에 의한 열팽창.수축의 이력 특성으로 설명되어질 수 있었다. 규격에 맞는 크라우닝이 형성되는 최적 접합 온도는 $700~720^{\circ}C$의 범위였다. 질화규소와 중탄소강의 직접 접합방법으로 접합과 동시에 크라우닝을 형성시키고 제어함으로써 난가공재인 세라믹을 곡면 가공하지 않고도 적당한 곡률을 갖는 저가의 세라믹 캠 팔로우어를 제조할 수 있었다.

• 한국세라믹학회지
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• 제42권1호
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• pp.69-75
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• 2005

고온자전연소법에 의한 질화알루미늄 합성에 있어서, 반응물(Al) 형상과 희석제(AlN) 입도 등의 형상학적 조건이 반응생성물에 미치는 영향을 조사하였다. 평균 입경(34$\mu$m)이 같은 두 종류의 Al 분말(입상, 편상)과 평균입경이 다른 4종류의 AM분말을 희석제로 사웅하여 반응 성형체를 준비하였다. 반응성형체의 충진밀도는 이론밀도의 $35\%로 고정하였고, 초기 질소압은 $1\~10MPa$, 희석을은 $0.4\~0.7$로 변화시키면서 반응을 실시하였다. 반응물과 희석제의 입도를 비슷하게 조절함으로써, 상대적으로 질소압이 낮은 1MPa의 조건에서도 순도 $98\% 이상, 입경 수십 $\mu$m의 AlN 합성이 가능함을 확인하였다. 이러한 고순도, 고입경화는 연소파 진행 후, 성형체 내부로 질소가스 투입 용이성의 차이에 의한 현상이라고 판단된다.

• The Korean Journal of Ceramics
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• 제6권2호
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• pp.155-158
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• 2000

NMR study has been used for measuring precise quantity of the amorphous phase in the $Si_3N_4$powder. Care must be taken to allow the $^{29}$Si nuclear spin system to fully relax between pulses in order to make the signals proportional to the number of nuclei in each phase. $^{29}$Si MAS spectrum was decomposed into the three spectra of $\alpha$-, $\beta$-, and amorphous $Si_3N_4$assuming pseudo-Voigt function. Moreover, the Rietveld analysis of the powder X-ray diffraction data was performed to measure quantity of crystalline phases as $\alpha/\beta$ ratio.

• 한국해양공학회지
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• 제27권2호
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• pp.8-12
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• 2013

Four kinds of silicon nitride composites with tri-laminate structure were prepared by stacking tapes with aligned ${\beta}-Si_3N_4$ whisker seeds. The composites were fabricated using a modified tape casting method for enhanced alignment of the whisker seeds. The relative densities of all four samples reached 99% at room temperature. The three-point flexural strengths of the samples according to the stacking sequences were measured at both room temperature and 1723 K. The high temperature strength of sample WWW was $457{\pm}14$ MPa. The fracture of sample WWW occurred mainly along the grain boundary. The room temperature strengths of samples OOO, OWO, WOW, and WWW were $430{\pm}32$ MPa, $470{\pm}19$ MPa, $700{\pm}14$MPa, and $940{\pm}14$ MPa, respectively.

• 한국세라믹학회지
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• 제49권6호
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• pp.631-636
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• 2012

Conventional SONOS (poly-silicon/oxide/nitride/oxide/silicon) type memory is associated with a retention issue due to the continuous demand for scaled-down devices. In this study, $Al_2O_3/Y_2O_3/SiO_2$ (AYO) multilayer structures using a high-k $Y_2O_3$ film as a charge-trapping layer were fabricated for nonvolatile memory applications. This work focused on improving the retention properties using a $Y_2O_3$ layer with different tunnel oxide thickness ranging from 3 nm to 5 nm created by metal organic chemical vapor deposition (MOCVD). The electrical properties and reliabilities of each specimen were evaluated. The results showed that the $Y_2O_3$ with 4 nm $SiO_2$ tunnel oxide layer had the largest memory window of 1.29 V. In addition, all specimens exhibited stable endurance characteristics (program/erasecycles up to $10^4$) due to the superior charge-trapping characteristics of $Y_2O_3$. We expect that these high-k $Y_2O_3$ films can be candidates to replace $Si_3N_4$ films as the charge-trapping layer in SONOS-type flash memory devices.

• 한국결정성장학회지
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• 제28권6호
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• pp.235-242
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• 2018

$Y_2O_3$를 소결조제로 사용한 질화알루미나(AlN)에 다양한 소결조건과 MgO의 도핑이 고온전기전도도의 특성에 대해 미치는 영향에 대해 연구하였다. MgO를 도핑 하였을 때, 2차상으로 스피넬과 페로브스카이트 상이 생성되었고, 이는 전기적 특성에 영향을 끼쳤다. 고온 임피던스를 분석한 결과 MgO의 도핑은 AlN 입내의 활성화 에너지와 전기전도도의 감소를 보이는 반면에, 입계의 경우에는 활성화 에너지와 전기전도도의 증가를 보였다. 이는 저항이 높은 비정질의 액상이 입계에 형성되거나, Mg의 석출에 의하여 쇼트키 장벽이 높아졌기 때문으로 예상된다. MgO가 도핑된 AlN을 어닐링 한 경우에는 어닐링 하지 않은 경우에 비하여, 활성화 에너지와 전기전도도가 더욱 증가하는 것을 볼 수 있었다. 이러한 결과는 $1500^{\circ}C$에서 어닐링을 통하여 미세구조분석에서 보이는 바와 같이 Mg 이온이 입계에서 입내로 확산된 때문으로 예상된다.

• 한국결정성장학회지
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• 제27권5호
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• pp.223-228
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• 2017

Aluminum nitride (AlN) powder was successfully synthesized at low temperature via carbothermal reduction and nitridation (CRN) assisted by microwave heating. The synthesis processes of AlN powder were investigated with X-ray diffraction, FE-SEM, FT-IR and TGA/DSC. Aluminum nitrate was used as an oxidizer and aluminum source, urea as fuel, and glucose as carbon source. These starting materials were mixed with D.I water and reacted in a flask at $100^{\circ}C$ for 20 minutes. After the reaction was finished, black foamy intermediate product was formed, which was considered to be an amorphous $Al_2O_3$ particles through intermediate product obtained by solution combustion synthesis (SCS) at the results of X-ray diffraction patterns and FT-IR. This intermediate product was nitridated at temperatures of $1300^{\circ}C$ and $1400^{\circ}C$ in $N_2$ atmosphere by a microwave heating furnace and then decarbonated at $600^{\circ}C$ for 2 hours in air. It should be noticed from FE-SEM images that as nitridated particles, identified as AlN from X-ray diffraction patterns, are covered with carbon residues. After decarbonating the nitridated powders, the spherical pure AlN powders were obtained without alumina and their particle sizes were dependent on the nitridating temperature with high temperature of $1400^{\circ}C$ giving large particles of around 70~100 nm.

• 한국세라믹학회지
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• 제51권5호
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• pp.386-391
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• 2014

Silicon nitride ($Si_3N_4$) is regarded as one of the most promising materials for high temperature structural applications due to its excellent mechanical properties at both room and elevated temperatures. However, one high-temperature $Si_3N_4$ material intended for use in radomes has a relatively high dielectric constant of 7.9 - 8.2 at 8 - 10 GHz. In order to reduce the dielectric constant of the $Si_3N_4$, an in-situ reaction process was used to fabricate $Si_3N_4-SiO_2$-BN composites. In the present study, an in-situ reaction between $B_2O_3$ and $Si_3N_4$, with or without addition of BN in the starting powder mixture, was used to form the composite. The in-situ reaction process resulted in the uniform distribution of the constituents making up the composite ceramic, and resulted in good flexural strength and dielectric constant. The composite was produced by pressure-less sintering and hot-pressing at $1650^{\circ}C$ in a nitrogen atmosphere. Microstructure, flexural strength, and dielectric properties of the composites were evaluated with respect to their compositions and sintering processes. The highest flexural strength (193 MPa) and lowest dielectric constant (5.4) was obtained for the hot-pressed composites. The strength of these $Si_3N_4-SiO_2$-BN composites decreased with increasing BN content.