• The Transactions of the Korean Institute of Electrical Engineers P
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• v.52 no.3
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• pp.107-112
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• 2003

Amorphous carbon nitride thin films have been deposited on silicon (100) by reactive magnetron sputtering method. The basic depositon parameters varied were the r.f. power(up to 250 W), the deposition pressure in the reactor(up to 100 mtorr) and Ar:$N_2$ gas ratio. FT-IR and X-ray photoelectron spectra showed the presence of different carbon-nitrogen bonds in the films. The surface topography of the films was studied by scanning electron microscopy(SEM) and atomic force microscopy(AFM).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.1
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• pp.1-7
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• 2014

Aluminum nitride, which has outstanding properties such as high thermal conductivity and electrical resistivity, has been received a great attention as a substrate and packaging material of semiconductor devices. Since aluminum nitride has a high sintering temperature of 2173 K and its properties depends on the impurity level, it is necessary to synthesize high-purity and nano-sized aluminum nitride powders for the applications. In this research, we synthesized high purity aluminum nitride nanopowders from aluminum using RF induction thermal plasma system. Sheath gas (NH3) flow was controlled to establish the synthesis condition of high purity aluminum nitride nanopowders. The obtained aluminum nitride nanopowders were evaluated by XRD, SEM, TEM, BET, FTIR and N-O analysis.

• Transactions on Electrical and Electronic Materials
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• v.7 no.5
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• pp.257-261
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• 2006

Nano-structured carbon nitride $(CN_x)$ films were prepared by reactive RF magnetron sputtering with a DC bias at various deposition conditions, and the physical and electrical properties were investigated. FTIR spectrum indicated an ${alpha}C_3N_4$ peak in the films. The carbon nitride film deposited on Si substrate had a nano-structured surface morphology. The grain size was about 20 nm and the deposition rate was $1.7{\mu}m/hr$. When the $N_2/Ar$ ratio was 3/7, the level of nitrogen incorporation was 34.3 at%. The film had a low dielectric constant. The metal-insulator-semiconductor (MIS) capacitors that the carbon nitride was deposited as insulators, exhibited a typical C-V characteristics.

• Journal of the Korean Ceramic Society
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• v.49 no.4
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• pp.352-362
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• 2012

This paper explores the use of a variety of carbon nanoparticles to impart electrical, thermal conductivity, good frictional properties to silicon nitride matrices. We used the highly promising types of carbon as carbon nanotubes, exfoliated graphene and carbon black nanograins. A high-efficiency attritor mill has also been used for proper dispersion of second phases in the matrix. The sintered silicon nitride composites retained the mechanical robustness of the original systems. Bending strength as high as 700 MPa was maintained and an electrical conductivity of 10 S/m was achieved in the case of 3 wt% multiwall carbon nanotube addition. Electrically conductive silicon nitride ceramics were realized by using carbon nanophases. Examples of these systems, methods of fabrication, electrical percolation, mechanical, thermal and tribological properties are discussed.

• Journal of the Korean Ceramic Society
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• v.49 no.4
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• pp.375-379
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• 2012

Nitride phosphors are now attracting significant attention of material scientists and phosphor engineers, because they promise red-shifted photoluminescence spectra, small Stokes shift, high quantum efficiency and low thermal degradation. A number of interesting nitride phosphors have been developed and practiced for producing white light with LED chips. In this paper, the applications of nitride phosphors in highly reliable wLEDs will be overviewed.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.344.1-344.1
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• 2016

Recently, graphene has shown great characteristic of electrical conductivity, strength, and elasticity. However, due to edge unstable and metallic properties, it is difficult to use as a semiconductor devices. The solution of such problems has been sought a way to use the boron nitride in a stacked layer structure. By graphene and boron nitride stacked layer structure on silicon substrate, the electron mobility is improved and deteriorated results in semiconductor properties. In this study, to make layered structure, we developed direct synthesis method for graphene on boron nitride. By using Raman technique, the directly stacked layer structure is in good agreement with measurements on each of the attributes.

• Journal of Advanced Marine Engineering and Technology
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• v.27 no.6
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• pp.783-789
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• 2003

An experimental method to investigate the fracture strength and fracture toughness for the silicon nitrides sintered at various sintering temperature is established. The erosion rate for these materials in the various concentration of NaOH solution is also investigated. In result, the fracture strength of Si3N4 is decreased with the increase of sintering temperature. On the other hand, the fracture toughness KIC is increased with the increase of sintering temperature. The erosion rate of silicon nitride in the NaOH solution depend largely on the grain size and the concentration of NaOH solution. The erosion rate of silicon nitride sintered at $1800^{\circ}C$ was much higher than that at $1950^{\circ}C$. These results are due to the unique columnar structure of silicon nitride.

• Journal of Mechanical Science and Technology
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• v.17 no.11
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• pp.1638-1649
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• 2003

A study is made on the characterization of damage tolerance by spherical indentation in hardly coated layer structure with modest elastic modulus mismatch. A hard silicon nitride is prepared for the coating material and silicon nitride with 5wt% of boron nitride composites for underlayer. Hot pressing to eliminate the effect of interface delamination during the fracture makes strong interfacial bonding. The elastic modulus mismatch between the layers is not only large enough to suppress the surface crack initiation from the coating layer but sufficiently small to prevent the initiation of radial crack from the interface. The strength degradation of the layer structure after sphere contact indentation does not significantly occur, while the degradation of silicon nitride-boron nitride composite is critical at a high load and high number of contacts.

• 연구논문집
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• s.34
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• pp.131-138
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• 2004

Porous silicon nitride ceramics were prepared by Self-propagating High Temperature Synthesis from silicon powder, silicon nitride powder and the pore-forming precursor. The microstructure, porosity and the flexural strength of the porous silicon nitride ceramics were varied according to the Si/$Si_3N_4$ ratio, size and amount of the pore-forming precursors. Some samples exhibited as high flexural strength as $162\pm24$ MPa. The high strength is considered to result from the fine pore size and the strong bonding among the silicon nitrid particles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.58-62
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• 1995

Thermally stimulated currents have been measured to investigate the trap characteristics of the MONOS structures with the tunneling oxide layer of 27${\AA}$ thick nitride layer of 73${\AA}$ thick and blocking oxide layer of 40${\AA}$ thick. By changing the write-in voltage and the write-in temperature, peaks of the I-T characteristic curve due to the nitride bulk traps and the blocking oxide-nitride interface traps ware separated from each other experimentally. The results indicate that the nitride bulk traps are distributed spatially at a single energy level and the blocking oxide-nitride interface traps are distributed energetically at interface.