• Korea-Australia Rheology Journal
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• 제15권4호
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• pp.173-178
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• 2003

Boron nitride is a new processing aid that is capable of eliminating gross melt fracture in several polymer processing operations. Its combinations with other processing aids i.e. fluoropolymers offer additional possibilities of obtaining enhanced processing aids that may take the processes to rates not realized before. A variety of different such combinations are discussed in this paper. The essential componenets are (1) boron nitride capable of eliminating gross melt fracture and (2) suitable lubricant capable of eliminating surface melt fracture such as stearates for the polyolefin processing and polyethylenes for the processing of fluoropolymers.

• 한국세라믹학회지
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• 제21권4호
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• pp.361-365
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• 1984

This study has been carried out to sinter silicon nitride with additives and to show the effect of surface finishments on its strength and Weibull modulus which are two most important factors for its applications into structural ceramics. Silicon nitride was sintered with the additions of $Al_2O_3$ and $Y_2O_3$ under pressureless cond-ition. The optimum properties were obtained by sintering at 1, 75$0^{\circ}C$ for 3hrs under $N_2$ atmosphere and the strength showed 6, 500kg/$cm^2$ at room temperature and 3, 300kg/$cm^2$ at 120$0^{\circ}C$. The effects of surface treatment on the strength of sintered $Si_3N_4$ were studied and the results showed that fine surface treatment increased the strength by up to 50% The Weibull analysis showed that its modulus was increased with increasing fineness of surface finishments. It was concluded that the mechanical properties of sintered silicon nitride could be improved by fine surface grinding which implied the brittle-fracture nature of sintered silicon nitride.

• Advances in nano research
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• 제5권1호
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• pp.1-12
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• 2017

In this paper, the critical buckling temperature of single-walled Boron Nitride nanotube (SWBNNT) is estimated using a new nonlocal first-order shear deformation beam theory. The present model is capable of capturing both small scale effect and transverse shear deformation effects of SWBNNT and is based on assumption that the inplane and transverse displacements consist of bending and shear components, in which the bending components do not contribute toward shear forces and, likewise, the shear components do not contribute toward bending moments. Results indicate the importance of the small scale effects in the thermal buckling analysis of Boron Nitride nanotube.

• Membrane and Water Treatment
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• 제9권1호
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• pp.63-68
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• 2018

Molecular dynamics simulations were used to study the removal of Cd(II) as a heavy metal from wastewater using armchair carbon nanotube, boron nitride nanotube and silicon carbide nanotubes under applied electric field. The system contains an aqueous solution of $CdCl_2$ as a heavy metal and a (7,7) nanotube as a nanostructured membrane, embedded in a silicon nitride membrane. An external electric field was applied to the considered system for the removal of $Cd^{2+}$ through nanotubes. The simulation results show that in the same conditions, considered armchair nanotubes were capable to remove $Cd^{2+}$ from wastewater with different ratios. Our results reveal that the removal of heavy metals ions through armchair carbon, boron nitride and silicon carbide nanotubes was attributed to the applied electric field. The selective removal phenomenon is explained with the calculation of potential of mean force. Therefore, the investigated systems can be recommended as a model for the water treatment.

• 한국분말재료학회지
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• 제5권2호
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• pp.133-138
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• 1998

The effect of $\beta$-$Si_3N_4$ seeding on microstructural development of silicon nitride based materials has been investigated. In particular, to observe more distinctly the abnormal grain growth in pressureless sintering, fine $\alpha$-$Si_3N_4$(mean particle size: 0.26 ${\mu}m$) powder classified by sedimentation method was used. It was possible to prepare silicon nitride with abnormally grown grains under low nitrogen pressure of 1 atm thanks to the heterogeneous nucleation on $Si_3N_4$ seed particles. The size and morphology of silicon nitride grains were strongly influenced by the presence of $\beta$-$Si_3N_4$ seed and overall chemical composition. For specimens with initially low $\beta$-content, the large grains grew without a significant impingement by other large grains. On the contrary, for specimens with initially high $\beta$-content, steric hindrance was effective. The resulting microstructure was less inhomogeneous and characterized by unimodal grain size distribution.

• 한국전기전자재료학회논문지
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• 제17권3호
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• pp.283-288
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• 2004

We have fabricated MIM capacitors for MMIC applications, with capacitances as high as 600pF/$\textrm{mm}^2$ and excellent electrical properties of the insulator layer. Silicon nitride thin film is the desirable material for MMIC capacitor fabrication. Standard MIM capacitance in MMIC is 300pF/$\textrm{mm}^2$ with an insulator layer thickness of more than 2000$\AA$. However, capacitors with thin insulator layers have breakdown voltages as low as 20V. We have deposited insulator layers by PECVD in our MIM structure with an air bridge between the top metal and the contact pad. The PECVD process was optimized for fabricating the desired capacitors to be used in MMIC. Silicon nitride(Si$_{x}$N$_{y}$) thin films of about 1000$\AA$ thick show capacitances of about 600pF/$\textrm{mm}^2$, and breakdown voltages above 70V at 100nA.A.A.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.856-857
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• 1998

Hydrogenated amorphous carbon nitride [a-C:H(N)] films were deposited on pretreated silicon(100) substrate in activated gas phase using. RF plasma-assisted CVD. We measured the FT-IR spectrum to investigate $C{\equiv}N$ stretching mode(nitrile), C-H stretching mode, C-H bending mode, C=C stretching mode C=N(imino) mode, and the EDX to investigate the ratio of N to C(0.25). By the results of FT-IR and EDX spectrum, We confirmed that hydrogenated amorphous carbon nitride films successfully were synthesized by RF-PACVD

• 한국표면공학회지
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• 제25권6호
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• pp.287-292
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• 1992

Silicon nitride thin film (SiNx) was deposited onto the 3inch silicon wafer using an electron cyclotron resonance (ECR) plasma apparatus. The thin films which were deposited by changing the SiH4N2 gas flow rate ratio at 1.5mTorr without substrate heating were analyzed through the x-ray photo spectroscopy (XPS) and ellipsometer measurements, etc. Silicon nitride thin films prepared by the electron cyclotron resonance plasma chemical vapor deposition method at low substrate temperature (<10$0^{\circ}C$) exhibited excellent physical and electrical properties. The very uniform and good quality silicon nitride thin films were obtained. The characteristics of electron cyclotron resonance plasma were inferred from the analyzed results of the deposited films.

• 한국세라믹학회지
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• 제33권11호
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• pp.1203-1208
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• 1996

질화규소의 균열진전시험은 정적 및 반복사중하의 균열진전특성을 명확히 밝혔다. 일정 K값의 정적하중에서 균열진전속도는 균열진전증가와 더불어 감소하고 최종적으로는 정지하였다. 또 균열진전저항은 응력반복에 의해 크게 감소하였다. 특히 균열진전저항은 균열진전증가와 더불어 증가하였고, 증가속도는 정적하중보다 반복하중하에서 훨씬 작았다.

• The Korean Journal of Ceramics
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• 제4권3호
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• pp.222-226
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• 1998

$Cu_3N$ film deposited on silicon oxide substrate by r.f. reactive sputtering technique. Synthesis and properties of copper nitride film were investigated for its possible application to Cu metallization as adhesive interlayer between copper and $SiO_2. Cu_3N$ film was synthesized at the substrate temperature ranging from $100^{\circ}C$ to $200^{\circ}C$ and at nitrogen gas ratio above $X_{N2}=0.4. Cu_3N, CuN_x$, and FGM-structured $Cu/CuN_x$ films prepared in this work passed Scotch-tape test and showed improved adhesion property to silicon oxide substrate compared with Cu film. Electrical resistivity of copper nitride film had a dependency on its lattice constant and was ranged from 10-7 to 10-1 $\Omega$cm. Copper nitride film was, however, unstable when it was annealed at the temperature above $400^{\circ}C$.