• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.413-416
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• 2004

In this study, zinc oxide(ZnO) having large misfit(18.2%) with sapphire was tried to be grown on very thin nitride buffer layers. For the creation of various kinds of nitride buffer layer, sapphire surface was modified by an irradiation of nitrogen ion beam with low energy generated from stationary plasma thruster(SPT) at room temperature. After the irradiation of ion beam, Al-N and Al-O-N bonding was identified to be formed as nitride buffet layers. Surface morphology was measured by AFM and then ZnO growth was followed by pulsed laser deposition(PLD). Their properties are analyzed by XRD, AFM, TEM, and PL. We observed that surface morphology was improved and deep level emission related to defects was almost vanished in PL spectra from the ZnO grown on nitride buffer layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.693-696
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• 2004

For InGaP/GaAs HBT applications, we have developed characterized MIM capacitors with thin $1000{\AA}$ PECVD silicon nitride which were deposited with $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $300^{\circ}C$ and had the capacitance density of 600 pF/$mm^2$ with the breakdown electric fields of 3073 MV/cm. Three PECVD process parameters were designed to lower the refractive index and then lower the deposition rate of silicon nitride films for the high breakdown electric field. At the PECVD process condition of gas mixing rate (0.92), working pressure (1.3 Torr), RF power (53 W), the AFM Rms value of about $1000{\AA}$ silicon nitride on the bottom metal was the lowest of 0.662 nmand breakdown electric fields were the highest of about 73 MV/cm.

• Journal of Welding and Joining
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• v.28 no.5
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• pp.80-85
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• 2010

This study focused on laser assisted machining (LAM) of silicon nitride ceramic that efficiently removes the material through machining of the softened zone by local heating. The effects of laser-assisted machining parameters were studied for cost reduction, and active application in processing of silicon nitride ceramics in this study. Laser assisted machining of silicon nitride allows effective cutting using CBN tool by local heating of the cutting part to the softening temperature of YSiAlON using by the laser beam. When silicon nitride is sufficiently preheated, the surface is oxidized and decomposed and then forms bloating, micro crack and silicate layer, thereby making the cutting process more advantageous. HIPSN and SSN specimens were used to study the machining characteristics. Higher laser power makes severer oxidation and decomposition of both materials. Therefore, HIPSN and SSN specimens were machined more effectively at higher power.

• Prospectives of Industrial Chemistry
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• v.20 no.4
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• pp.1-20
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• 2017

질화붕소나노튜브(BNNT: Boron Nitride Nanotubes)는 근래에 들어 전 세계적으로 많은 주목을 받고 있는 나노신소재이다. CNT와 유사한 기계적 특성과 열전도, 열팽창 특성을 가지고 있지만 동시에 세라믹의 특성도 가지고 있어 열적/화학적 안정에 있어서는 CNT와 비교하여 매우 우수하다. 특히 BNNT를 구성하고 있는 붕소는 열중성자를 흡수할 수 있는 능력이 CNT를 구성하고 있는 탄소와 비교하여 20만 배나 높기 때문에, 우수한 기계적 특성을 이용한 경량화와 방사선 차폐능을 동시에 보유할 수 있는 미래 우주공학 물질로 매우 유용하다. 그러나 제조하는데 상대적으로 많은 에너지가 필요하고, 전 세계적으로 아직 대량생산이 이루어지지 않고 있으며, 제조 시 생성되는 불순물의 양이 많은 것이 단점이다. 또한 BNNT를 정제하는 것은 매우 어려워 산업적 응용은 아직 제한적이라 할 수 있지만, BNNT가 CNT와 세라믹의 특성을 동시에 보유하고 있다는 물질의 우수성과 활발한 연구개발 활동을 감안하면, 이에 대한 해결점을 찾을 수 있을 것으로 예상된다. 본 고찰에서는 다양한 BNNT의 제조방법과 각 방법의 장단점을 소개하고, 현재 연구되고 있는 BNNT의 산업적 응용에 대해 소개할 것이다. 이를 통해 국내에서 매우 미진한 BNNT 관련 연구가 활성화되는 계기가 될 것을 기대한다.

• Proceedings of the Korean Nuclear Society Conference
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• 1997.05a
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• pp.489-494
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• 1997

A comparative transient analyses were performed for oxide and nitride cores or a large (3000 MWt), pool-type, liquid-metal-cooled reactor (LMR). The study was focused on three representative accident initiators with failure to scram : the unprotected loss-of-flow (ULOF), the unprotected transient overpower (UTOP), and the unprotected fast transient overpower (UFTOP). The margins to fuel melting and sodium boiling have been evaluated for these representative transients. The results show that there is an increase in safety margin with nitride core which maintains the physical dimensions of the oxide core.

• Journal of the Korean Ceramic Society
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• v.30 no.2
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• pp.131-138
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• 1993

The effects of silane coupling agents on the injection molding process were investigated using silicone nitride mixtrues with a binder system containing polypropylene as a major binder (55vol% solid loading). The formation of bonding between silicon nitride powder and coupling agents was confirmed through the analyses of powder surface. The use of coupling agents improved mixing characteristics judged by the torque change during mixing process. the coupling agents also reduced molten viscosity of the mixture considerably, which is a main factor to determine the flow of the mixture. However, the bonding between coupling agents and polymers had a negative effect on the debinding process by retarding the thermal decomposition.

• Journal of the Semiconductor & Display Technology
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• v.6 no.1 s.18
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• pp.27-30
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• 2007

The gigahertz oscillator behavior of double-walled boron-nitride nanotube (BNNT) was investigated by using classical molecular dynamics simulations. The BNNT oscillator characteristics were compared to carbon-nanotube (CNT) and hybrid-C@BNNT oscillators. The results show that the BNNT oscillators are higher than the van der Waals force of the CNT oscillator. Since the frictional effects of BNNT oscillators are higher than that of a CNT oscillator, the damping factors of BNNT and hybrid oscillators are higher than that of a CNT oscillator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.25-29
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• 1997

Capacitor-type MONOS (metal-oxide-nitride-oxide- semiconductor) NVSMs with 23$\AA$ tunneling oxide and 40$\AA$ blocking oxide were fabricated. The thicknesses of nitride layer were 45$\AA$, 91$\AA$ and 223$\AA$, Breakdown characteristics of MONOS devices were measured to investigate the reliability of superthin ONO structure using ramp voltage and constant voltage method. Reducing the nitride thickness will significantly increase the reliablity of MONOS NVSM.

• Journal of the Korean institute of surface engineering
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• v.22 no.4
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• pp.215-220
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• 1989

Silicon Nitride whose thickness is about $100\AA$by the ellipsometer was successfully formed by the Plasma reaction. Nitrogen Plasma was formed by applying the 200KHz, 500Watt power between the two electroes and nitridation of silicon was carried out directly on the top of the silicon wafer. Thus Silicon Nitride formed was oxidized to from oxynitrides and their electrical characterlstice were analyzed by measuring I-V curves and capacitances. Through ESCA depth profiles, the chemical composition changes before and after the oxidation wers analyzed.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.211-212
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• 2002

Friction and wear of pressureless sintered Ti(C,N)-WC ceramics were studied using a ball-on-reciprocating flat apparatus in open air. The silicon nitride ball and the cemented carbide (WC-Co) ball were used against the Ti(C,N)-WC plate samples. The friction coefficients of the Ti(C,N)-WC samples against the silicon nitride ball and the cemented carbide ball were about 0.57 and 0.3, respectively. The wear coefficient of the sample without WC addition was 5 times as large as that of the sample with 10 mole % WC addition when tested against the silicon nitride ball under 98 N. The higher wear coefficient of Ti(C,N)-0WC was explained in part by larger grain size. Wear occurred mainly by grain dislodgment after intergranular cracking mainly caused by the accumulated stress within the grains.