• 한국진공학회:학술대회논문집
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• 한국진공학회 1997년도 제13회 학술발표회 논문개요집
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• pp.26-26
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• 1997

• 한국진공학회:학술대회논문집
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• 한국진공학회 2003년도 제25회 학술발표회 초록집
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• pp.38-39
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• 2003

• 한국재료학회:학술대회논문집
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• 한국재료학회 1997년도 한국재료학회 춘계학술발표회
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• pp.35-35
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• 1997

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2016년도 자성 및 자성재료 국제학술대회
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• pp.45-45
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• 2016

• 한국진공학회:학술대회논문집
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• 한국진공학회 1996년도 제11회 학술발표회 논문개요집
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• pp.40-41
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• 1996

Nitridation technique has been receiving much attention for the formation of a thin nitrided buffer layer on which high quality nitride films can be formedl. Particularly, gallium nitride (GaN) has been considered as a promising material for blue-and ultraviolet-emitting devices. It can also be used for in situ formed and stable passivation layers for selective growth of $GaAs_2$. In this work, formation of a thin nitrided layer is investigated. Nitrogen electron cyclotron resonance(ECR)-plasma is employed for the formation of thin nitrided layer. The plasma source used in this work is a compact ECR plasma gun3 which is specifically designed to enhance control, and to provide in-situ monitoring of plasma parameters during plasma-assisted processing. Microwave power of 100-200 W was used to excite the plasma which was emitted from an orifice of 25 rnm in diameter. The substrate were positioned 15 em away from the orifice of plasma source. Prior to nitridation is performed, the surface of n-type (001)GaAs was exposed to hydrogen plasma for 20 min at $300{\;}^{\circ}C$ in order to eliminate a native oxide formed on GaAs surface. Change from ring to streak in RHEED pattern can be obtained through the irradiation of hydrogen plasma, indicating a clean surface. Nitridation was carried out for 5-40 min at $RT-600{\;}^{\circ}C$ in a ECR plasma-assisted molecular beam epitaxy system. Typical chamber pressure was $7.5{\times}lO^{-4}$ Torr during the nitridations at $N_2$ flow rate of 10 seem.(omitted)mitted)

• 자원리싸이클링
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• 제26권3호
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• pp.39-46
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• 2017

탄소환원질화법을 이용하여 질화알루미늄(Aluminum Nitride: AlN)을 제조하는 연구를 실험실 규모로 수행하였다. 고품위 알루미나 분말과 탄소(carbon black)를 배합하여 흑연 도가니에 장입하고, 노내 분위기를 진공으로 한 다음 질소 가스를 흘려주어 온도($1,600{\sim}1,700^{\circ}C$), 시간(0.5~6 hr), $N_2$유량($4.7{\times}10^{-6}{\sim}20{\times}10^{-6}m^3/sec$), 장입 시료층 높이(0.5~20 mm)를 변화시키면서 AlN을 합성하였다. 실험결과, 고순도 알루미나와 탄소 혼합물을 질소 분위기의 $1600{\sim}1700^{\circ}C$ 온도 범위에서 반응시킬 때 반응 온도가 높을수록 생성된 AlN의 1차 입자 크기가 커지고, 반응 활성화 에너지는 382 kJ/mol로 화학 반응이 율속 단계로 판단되었다. 시험 제조한 AlN들의 산소 함량은 0.71~0.96 wt%였고, 질소는 30.7~35.1 wt%로서 상용 제품과 근접한 결과를 나타내었다.

• 한국재료학회지
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• 제22권10호
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• pp.539-544
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• 2012

We have grown AlN nanorods and AlN films using plasma-assisted molecular beam epitaxy by changing the Al source flux. Plasma-assisted molecular beam epitaxy of AlN was performed on c-plane $Al_2O_3$ substrates with different levels of aluminum (Al) flux but with the same nitrogen flux. Growth behavior of AlN was strongly affected by Al flux, as determined by in-situ reflection high energy electron diffraction. Prior to the growth, nitridation of the $Al_2O_3$ substrate was performed and a two-dimensionally grown AlN layer was formed by the nitridation process, in which the epitaxial relationship was determined to be [11-20]AlN//[10-10]$Al_2O_3$, and [10-10]AlN//[11-20]$Al_2O_3$. In the growth of AlN films after nitridation, vertically aligned nanorod-structured AlN was grown with a growth rate of $1.6{\mu}m/h$, in which the growth direction was <0001>, for low Al flux. However, with high Al flux, Al droplets with diameters of about $8{\mu}m$ were found, which implies an Al-rich growth environment. With moderate Al flux conditions, epitaxial AlN films were grown. Growth was maintained in two-dimensional or three-dimensional growth mode depending on the Al flux during the growth; however, final growth occurred in three-dimensional growth mode. A lowest root mean square roughness of 0.6 nm (for $2{\mu}m{\times}2{\mu}m$ area) was obtained, which indicates a very flat surface.

• 한국분말재료학회지
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• 제28권3호
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• pp.259-266
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• 2021

The (Ga_1-xZn_x)(N_1-xO_x) solid solution is attracting extensive attention for photocatalytic water splitting and wastewater treatment owing to its narrow and controllable band gap. To optimize the photocatalytic performance of the solid solution, the key points are to decrease its band gap and recombination rate. In this study, (Ga_1-xZn_x)(N_1-xO_x) nanofibers with various Zn fractions are prepared by electrospinning followed by calcination and nitridation. The effect of the composition and crystallinity of electrospun oxide nanofibers on the morphology and optical properties of the obtained solid-solution nanofibers are systematically investigated. The results show that the final shape of the (Ga_1-xZn_x) (N_1-xO_x) material is greatly affected by the crystallinity of the oxide nanofibers before nitridation. The photocatalytic properties of (Ga_1-xZn_x)(N_1-xO_x) with different Ga:Zn atomic ratios are investigated by studying the degradation of rhodamine B under visible light irradiation.

• 한국세라믹학회지
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• 제29권5호
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• pp.347-356
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• 1992

Various kaolin samples with different alumina content were prepared from calcined admixture of kaolin and ammonium sulfate by varying the treatment time in sulfuric acid. Samples were nitridated under N2 or N2-H2 atmosphere with changing the amount of added carbon, the reaction time and temperature. As the alumina content lowered, the size of kaolin particles decreased and the specific surface area increased. XRD analysis indicated that ${\alpha}$-quartz remained by decomposition of halloysite and meta-halloysite. Experimental results of nitridation behavior are summerized as follows; 1) Nitridation under N2 atmosphere. With the increase of C/SiO2 ratio and with the decrease of Al2O3 content, disappearance of XRD pattern peaks of mullite, ${\alpha}$-quartz and ${\alpha}$-Al2O3 were accelerated at 1300$^{\circ}C$. SiC was the main phase in the reaction product of acid-treated kaolin samples nitridated at 1300$^{\circ}C$ for 10 hours regardless of C/SiO2 ratio. But the XRD peak intensities of ${\beta}$-Si3N4, ${\beta}$-sialon and SiC did not show much difference when untreated raw kaolin was fired at the same condition. When the ratio of C/SiO2 was 3.5, ${\beta}$-sialon and ${\beta}$-Si3N4 existed in the reaction product of about 22% alumina containing kaolin sample fired at 1350$^{\circ}C$ for 7 hours. Only ${\beta}$-sialon existed in the same sample fired at 1400$^{\circ}C$ for 10 hours. ${\beta}$-sialon was obtained from all of the acid-treated kaolin samples fired at 1400$^{\circ}C$ for 40 hours, but AlN and SiC remained in the untreated kaolin sample. Z value of the ${\beta}$-sialon obtained from the 22% alumina containing kaolin sample fired at 1400$^{\circ}C$ for 40 hours was about 1.3(XRD) and 1.5(EDS). 2) Nitridation under 80N2+2OH2 mixed gas atmosphere with the C/SiO2 ratio of 1 Mullite was not found, but ${\alpha}$-Si3N4, and ${\beta}$-sialon were present in the reaction product of about 22% alumina containing kaolin sample fired at 1300$^{\circ}C$ for 10 hours. When untreated kaolin sample was nitridated at the same condition, mullite remained. AlN and SiC were not found in the reaction product of about 22% alumina containing kaolin sample fired at 1350$^{\circ}C$ for 5 hours. On the other hand, AlN and SiC remained in the product of untreated kaolin fired at the same condition.

• 한국세라믹학회지
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• 제36권2호
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• pp.193-202
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• 1999

Al 분말과 AlN 분말에 SiC 휘스커와 소결조제를 첨가하여 습식혼합한 후 성형체를 제조하고 600~140$0^{\circ}C$의 온도에서 5시간 동안 질화반응을 진행시켰다. 반응소결체의 꺾임강도를 측정한 결과 질화율이 높아질수록, 그리고 SiC 휘스커의 첨가량이 많아질수록 증진되는 것을 확인할 수 있었다. Al과 AlN이 50:50으로 혼합된 시편을 140$0^{\circ}C$에서 5시간 동안 질화반응을 시킨 결과 97% 이상의 질화율과 2%미만의 수축율을 나타내었고, 상대밀도값은 78%이었다. 그리고 반응소결체의 최대 꺾임강도는 250 MPa이었다. 완전히 질화반응을 시켜 미반응 Al이 잔존하지 않는 시편들을 1$700^{\circ}C$, 180$0^{\circ}C$, 190$0^{\circ}C$의 온도에서 2시간 동안 재소결한 결과 수축은 6% 미만이었으며, 최고 86%의 상대밀도를 나타내었다. 180$0^{\circ}C$이상의 온도에서 2시간 동안 재소결한 결과 수축은 6%미만이었으며, 최고 86%의 상대밀도를 나타내었다. 180$0^{\circ}C$이상의 온도에서 재소결한 시편들의 경우 AlN과 SiC 휘스커가 고용체를 형성하여 SiC 휘스커 첨가에 의한 기계적 물성의 증진 효과는 거의 나타나지 않았다. 그리고 재소결한 시편의 최대 꺾임강도는 295 MPa이었다.