• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.9
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• pp.1386-1392
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• 1990

Characteristics of the direct thermal nitrided films by RF induction heating has been studied. The nitrided films on Si were prepared at 1000-1200\ulcorner in ammonia gas ambient. The nitrided films were analyzed by ellipsometry an Auger electron spectroscopy. I-V and C-V characteristics of MIS capacitors fabricated using nitrided film were investicated. The nitrided films were grown up mostly within initial thirty minutes and no significant growth was observed thereafter. Etch rates of films were about 1\ulcornermin in diluted HF (HF:H2O= 1:50). The nitrided films were resistant to dry and wet oxidations at temperatures below 1000\ulcorner and 900\ulcorner, respectively.

• Journal of the Korean Ceramic Society
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• v.24 no.2
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• pp.147-154
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• 1987

Silicon nitride powders were prepared by the simultaneous reduction and nitridation from powder mixtures of Kim cheon quartzite and carbon (graphite or carbon black) at1400$^{\circ}C$ for 10 hours in nitrogen atmosphere. The effects of the reaction variables on the yield of products and on the ${\alpha}$/${\beta}$ ratio were examined. The average particle size, density, and the ${\alpha}$/${\beta}$ ratio of the obtained si3N4 were 1.0$\mu\textrm{m}$, 3.10g/㎤ and 90/10, respectively. It was found that the Si3N4 powders obtained in this work were comparable to the foreign commercial products.

• Journal of the Korean Ceramic Society
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• v.23 no.4
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• pp.17-22
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• 1986

$\beta$-Sialon powders were prepared by the reduction-nitridation reaction from the mixture of Wando-pyrophyllite and graphite at 135$0^{\circ}C$ in $N_2-H_2$ atmosphere. The $\beta$-Sialon powders were sintered at 175$0^{\circ}C$ by the pressureless sintering for 90min and the hot-pressing for 60 min respectively. All the sintered bodies showed their relative densities higher than 94% The values of M.O.R fracture toughness(KIC) and hardness showed 32.9kpsi 2.9MN/$m^{1.5}$ , 12.1GN/$m^2$ for the pressure-less sitnered bodies and 48.6kpsi, 4.6 MN/4m^{1.5}$ 15.3GN/$m^2$ for the hot-pressed bodies respectively.

• Journal of the Korean Ceramic Society
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• v.26 no.2
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• pp.201-209
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• 1989

Fine Si-Al-OH coprecipitate powders were prepared from Si- and Al-alkoxides by the hydrolysis method. $\beta$-Sialon powder was obtained from prepared Si-Al-OH coprecipitate by the simultaneous reduction and nitridation method. The syntehsized Sialon powder was pressureless sintered at 175$0^{\circ}C$ for 90 min in N2 atmosphere. The characterization of the Sialon powder was performed with XRD, BET, SEM, TEM and particle size analysis. The sinterability and mechanical properties of sintered bodies were investigated in terms of relative density, M.O.R., fracture toughness, hardness and the morphology of microstructure. The highest values of their mechanical properties were obtained for the $\beta$-Sialon ceramics at Z=1 and those values are as follows : M.O.R., KIC and HV of $\beta$-Sialon ceramics(Z=1) are 499.1 MPa, 5.9MN/m3/2 and 18.7GPa, respectively.

• Journal of the Korean Ceramic Society
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• v.28 no.5
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• pp.390-398
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• 1991

$\beta$-Sialon powder was prepared from Wando pyrophyllite by the carbothermic reduction and nitridation at 135$0^{\circ}C$ for 10 h nitrogen atmosphere. Amorphous silica prepared from Si(OC2H5)4 was added to Wando pyrophyllite powder in order to control the final Z value. Two different methods were applied for synthesis of $\beta$-sialon powders. In Process A, the amorphous silica prepared from Si(OC2H5)4 was admixed to Wando pyrophyllite powder. Process B was started from the mixture of Wando Y2O3 was added to the synthesized $\beta$-Sialon powders as a sintering aid, and the mixed powders were hot pressed at 175$0^{\circ}C$ for 120 min in nitrogen atmosphere under 30 MPa. Their mechanical properties were compared. The maximum values of M.O.R., hardness and KIC were 667 MPa, 16 GPa and 6.3 MN/m3/2, respectively, and they are the values obtained form $\beta$-Sialon ceramics prepared by process A of Z=0.5.

• Journal of the Korean Ceramic Society
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• v.28 no.12
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• pp.961-968
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• 1991

The nature and composition of the surfaces of silicon nitride and β-Sialon powders were investigated using high voltage and high resolution transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). β-Sialon powder was produced from Hadong kaolin by the carbothermic reduction and simultaneous nitridation. XPS showed that Al was contained in the surface of β-Sialon powder besides Si, N and O components, which is different from that of silicon nitride. It was supposed that Al in the surface of β-Sialon was bonded with oxygen from the oxygen-nitrogen ratio and the measurement of Al 2p binding energies. After both silicon nitride and β-Sialon powders were oxidized at 800℃ for 24h in air, nitrogen didn't exist in the surfaces and the depth of the oxide layer increased. The measurement of Si 2p binding energies showed that the chemical shifts occurred from Si3N2O and/or Si2N2O to SiO2 phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.71-74
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• 1998

In this Paper, we investigate the electrical properties of ultra-thin(70${\AA}$) nitrided(NO) and reoxidized nitrided oxide(ONO) film that ale considered to be premising candidates for replacing conventional silicon dioxide film in ULSI level integration. we studied I$\sub$g/-V$\sub$g/ characteristics to know the effect of nitridation and reoxidation on the current conduction, leakage current time-dependent dielectric breakdown(TDDB) to evaluate charge-to-breakdown(Q$\sub$bd/), and the effect of stress temperature(25, 50, 75, 100$^{\circ}C$) and compared to those with thermal gate oxide(SiO$_2$) of identical thickness. From the measurement results, we find that reoxidized nitrided oxide(ONO) film shows superior dielectric characteristics, leakage current, and breakdown-to-charge(Qbd) performance over the NO film, while maintaining a similar electric field dependence compared to NO layer. Besides, ONO film has strong resistance against variation in temperature.

• Bulletin of the Korean Chemical Society
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• v.30 no.7
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• pp.1563-1566
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• 2009

One-dimensional aluminum nitride (AlN) nanostructures were synthesized by calcining an Al(OH)(succinate) complex, which contained a very small amount of iron as a catalyst, under a mixed gas flow of nitrogen and CO (1 vol%). The complex decomposed into a homogeneous mixture of alumina and carbon at the molecular level, resulting in the lowering of the formation temperature of the AlN nanostructures. The morphology of the nanostructures such as nanocone, nanoneedle, nanowire, and nanobamboo was controlled by varying the reaction conditions, including the reaction atmosphere, reaction temperature, duration time, and ramping rate. Iron droplets were observed on the tips of the AlN nanostructures, strongly supporting that the nanostructures grow through the vapor-liquid-solid mechanism. The variation in the morphology of the nanostructures was well explained in terms of the relationship between the diffusion rate of AlN vapor into the iron droplets and the growth rate of the nanostructures.

• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.402-408
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• 1989

$\beta$-Sialon powder was synthesized by the simultaneous reduction and nitridation of the mixed powder of Hadong kaolin and Kimcheon quartzite, using graphite as a reducing agent. The synthesized $\beta$-Sialon powder (Z=1) was hot-pressed at 175$0^{\circ}C$, for 90min under 30MPa in N2 atmosphere, after Yttria and YAG composition material were added as sintering agents. The effects of grain-boundary crystallization on high-temperature mechanical properties of $\beta$-Sialon ceramics were investigated. Strength degradation was observed at above 1,00$0^{\circ}C$ for the $\beta$-Sialon (Z=1)-8wt% Y2O3 composition, but it was not observed up to 1,20$0^{\circ}C$ for the $\beta$-Sialon-8wt% YAG composition which was annealed at 1,40$0^{\circ}C$ for 4 hours in N2 atmosphere. After the $\beta$-Sialon-8wt% YAG composition was annealed, the decrease of fracture toughness was observed.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.542-545
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• 1987

THE ELECTRICAL CHARACTERISTICS Of RAPID THERMAL OXIDES AND NITRIDED OXIDES HAVE BEEN INVESTIGATED. R.T.OXIDE FILMS HAVE BEEN PREPARED BY ONLY R.T. OXIDATION OR R.T.OXIDATION AND SUBSEQUENT R.T.ANNEAL. NITRIDED OXIDE FILMS HAVE BEEN PREPARED BY R.T.OXIDATION AND SUBSEQUENT R.T.NITRIDATION.AND CONVENTIONAL OXIDES ALSO HAVE BEEN PREPARED TO COMPARE WITH R.T.P OXIDES. R.T.ANNEALED OXIDES SHOW EXCELLENT BREAKDOWN FIELD. LEAKAGE CURRENT AND TDDB CHARACTERISTICS. ALSO, CAPACITANCE Of R.T NITRIDED OXIDES ARE SUPERIOR BY 10% TO CONVENTIONAL OXIDES, BUT TDDB CHARACTERISTIC ARE POORER THAN OXIDE FILMS.