• Bulletin of the Korean Chemical Society
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• 제33권5호
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• pp.1653-1658
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• 2012

A new anthracene-containing conjugated molecule was synthesized through the Sonogashira coupling and reduction reactions. 1-Ethynyl-4-hexylbenzene was coupled to 2,6-bis((4-hexylphenyl) ethynyl)anthracene-9,10-dione through a reduction reaction to generate 2,6,9,10-tetrakis((4-hexylphenyl)ethynyl) anthracene. The semiconducting properties were evaluated in an organic thin film transistor (OTFT) and a single-crystal field-effect transistor (SC-FET). The OTFT showed a mobility of around 0.13 $cm^2\;V^{-1}\;s^{-1}$ ($I_{ON}/I_{OFF}$ > $10^6$), whereas the SC-FET showed a mobility of 1.00-1.35 $cm^2\;V^{-1}\;s^{-1}$, which is much higher than that of the OTFT. Owing to the high photoluminescence quantum yield of 2,6,9,10-tetrakis((4-hexylphenyl)ethynyl) anthracene, we could observe a significant increase in drain current under irradiation with visible light (${\lambda}$ = 538 nm, 12.5 ${\mu}W/cm^2$).

• 대한기계학회논문집
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• 제17권10호
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• pp.2601-2610
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• 1993

A numerical study on the melting process inside an isothermal spherical capsule is made. It is assumed that the phase change medium of its solid phase is heavier than the liquid phase and therefore the unmelted solid core is continuously moving downward on account of gravity forces. Such a gravity-assisted melting is commonly characterized by the existence of a thin liquid film below the solid core. The present study is motivated to present a full-equation-based analysis of the influences of the initial subcooling and the natural convection on the fluid flow and heat transfer characteristics associated with the gravity-assisted melting. In the light of the solution strategy, the present study is substantially distinguished from the existing works in that the complete set of governing equations in both the melted and unmelted regions are resolved without subdivision of the solution domains. For example, the liquid film region and the upper melted region are treated here as one domain and thus obviating laborious efforts to couple them. Numerical results are obtained by varying the Rayleigh numbers and the degree of subcooling. For the range of parameters examined, the presence of subcooling was found to impede the melting rate. The dropping velocity of the unmelted solid core was observed to affect the natural convection in the liquid significantly. When compared with the available experimental data, much improved prediction was achieved.

• Journal of Information Display
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• 제4권1호
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• pp.17-23
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• 2003

A thermoset type anisotropic conductive adhesive film (ACAF) comprising epoxy resin and natural butyl rubber (NBR) as the binder, micro-encapsulated imidazole as the curing agent, and Ni/Au coated polymer bead as a conductive particle has been studied. These films have been prepared to respond to requirements such as improved contact resistance, current status less of than 60 ${\mu}m$ and reliability. These films can also be used for connection between the ITO glass for LCD panel and the flexible circuit board. The curing conditions for the connection were 40, 20 and 15 seconds at 150, 170 and 190 $^{\circ}C$, respectively. The initial contact resistance and adhesion strength were 0.5 ${\Omega}/square$ and 0.4 kg/cm under the condition of 30 kgf/$^{cm}^2}$, respectively. After completing one thousand thermal shock cycling tests between -15 $^{\circ}C$ and 100 $^{\circ}C$, the contact resistance was maintained below 0.7 ${\Omega}/square$. Durability against high temperature (80$^{\circ}C$) and high humidity (85 % RH) was also tested to confirm long-term stability (1000 hrs) of the conduction.

• Transactions on Electrical and Electronic Materials
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• 제1권2호
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• pp.12-17
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• 2000

Helicon waves were excited by a Nagoya type III antenna in magnetized plasma, and hydrogen and methane are fed through a Mass Flow Controller(MFC). We made a diagnosis of properties of helicon plasma by H$_2$gaseous discharge, and fabricated the diamond thin film. The maximum measured electron density was 1${\times}$10$\^$10/ cm$\^$-3/. Diamond films have been growo on (100) silicon substrate using the helicon plasma chemical vapor deposition. Diamond films were deposited at a pressure of 0.1 Torr, deposition time of 40~80 h, a substrate temperature of 700$^{\circ}C$ and methane concentrations of 0.5~2.5%. The growth characteristics were investigated by means of X-ray Photoelectron (XPS) and X-ray Diffraction(XRD), XRD and XPS analysis revealed that SiC was formed, and finally diamond particles were definitely deposited on it. With increasing deposition time, the thickness and crystallization of the daimond thin film increased, For this system the optimum condition of methane concentration was estimated to near to 1.5%.

• Journal of the Korean Wood Science and Technology
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• 제26권4호
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• pp.26-33
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• 1998

Acoustical properties of chestnut and paulownia woods have been determined in four film thicknesses of oriental lacquering and cashew varnishing on double surfaces of soundboard to elucidate effects of finishing. Accelerometer was attached to the specimen at one third position from one end, and specimen was hit by the impact hammer at one third position from opposite end. Data were processed by vibration analyzer. The ratio of axial-to-transverse sound velocity of untreated specimens of chestnut and paulownia were 3.25 and 5.34, respectively. Natural frequency, specific Young's modulus, acoustical coefficient, sound velocity, damping of sound radiation(DSR) and acoustical converting efficiency(ACE) decreased by oriental lacquering and cashew varnishing for both species. Damping of internal friction of chestnut decreased by oriental lacquering and cashew varnishing, but that of paulownia increased. Natural frequency. specific Young's modulus, acoustical coefficient, sound velocity, and DSR decreased with increased film thickness of both finishing materials. However, damping of internal friction and ACE showed irregular tendency with increased film thickness. Acoustical properties of cashew varnished chestnut specimen were better than those of oriental lacquered specimen. Acoustical properties of oriental lacquered paulownia specimen were better than those of cashew varnished specimen.

• 한국미생물·생명공학회지
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• 제24권5호
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• pp.546-552
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• 1996

The applicability of chitosan, a biodegradable natural polymer, as the coating material to prevent the dispersal of the spores of the apple white rot agent Botryosphaeria dothidea, was investigated. The physical properties of mixed chitosan/polyvinyl alcohol(PVA) film showed the increased physical properties for film formation, such as tensil strength, elongation, and viscosity, compared to either chitosan or PVA film. The FT-IR spectra of chitosan/PVA film indicated that the film was formed by simple blending not by any new synthetic bond. The chitosan and chitosan/PVA film showed effective antifungal activity on B. dothidea. The formed films were well decomposed by ASTM strains used for biodegradability test, on the other hand, the PVA film could not be decomposed by above standard strains. The field test at apple orchard showed that the dispersal of B. dothidea spores could be effectively reduced by coated film, especially by chitosan/PVA film. The spore dispersal was reduced upto 97.0% by 1.0% chitosan/5.0% PVA film during 4 months.

• 동굴
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• 제75호
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• pp.49-54
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• 2006

Electrophoretic Deposition (EPD) is the most convenient technology to deposit natural or oxide powders of nonconductive materials in alcoholic suspension solution with adding electrolyte of iodine to form ceramic thick film on metal substrate under applied electric field with double electric layer between electrode and metal substrate. In this research work, the important parameters and technical ways were studied to form EPD thick films of typical oxide ceramics of Al2O3, YBCO and tourmaline powders.

• 한국재료학회지
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• 제17권12호
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• pp.660-663
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• 2007

Piezoelectric energy harvesting from our surrounding vibration has been studied for driving the wireless sensor node. To change the vibration energy into the electric-energy efficiently, the natural frequency of cantilever needs to be adjusted to that of a vibration source. When adding 6.80g mass on the end of the fabricated cantilever, a natural frequency shifts from 136 Hz into 49.5 Hz. In addition, electro-mechanical coupling factor increased from 10.20% to 11.90% and resulted in the 1.18 times increase of maximum output power.

• 한국막학회:학술대회논문집
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• 한국막학회 1996년도 제4회 하계분리막 Workshop (초순수 제조와 막분리 공정)
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• pp.121-147
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• 1996

Since 1980, the water quality of ultra-pure water has been rapidly improved, and presently ultra-pore water producing equipment for 64Mbit is in operation. Table 1 shows the degree of integration of DRM and required water quality exlmple. The requirements of the ultra-pure water for 64Mbit are resistivity: 18.2 MQ/cm or higher, number of particulates: 1 pc/ml or less (0.05 $\mu$m or larger). bacteria count: 0.1 pc/l or less. TOC (Total Organic Carbon, index of organic snbstance) : 1ppb or less, dissolved oxygen: 5ppb or less, silica: 0.5ppb or less, heavy metal ions: 5ppb or less. The effect of metals on the silicon wafer has been well known, and recently it has been reported that the existence of organic substance in ultra-pure water is closely related to the device defect, drawing attention. It is reported that if organic substance sticks to the natural oxidation film, the oxide film remaims on the organic substance attachment in the hydrofluoric acid treatment (removal of natural oxidation film). The organic substance forms film on the silicon wafer, and harmful elements such as metals and N.P.S., components contained in the organic substance and the bad effect due to the generatinn of silicon carbide cannot be forgotten. In order to remove various impurities in raw water, many technological develoments (membrane, ion exchange, TOC removal, piping material, microanalysis, etc.) have been made with ultra-pure water producing equipment and put to practical use. In this paper, technologies put to practical use in recent ultra-pure vater producing equimeut are introduced.

• Journal of Information Display
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• 제2권1호
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• pp.38-42
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• 2001

Thin films of $In_2O_3-SnO_2$(ITO), $SnO_2$, and $SiO_2$ were prepared on the PET substrate by DC magnetron roll sputtering. 135 nm thick ITO film on $SiO_2$/PET substrate has sheet resistance as low as 55 ${\Omega}/square$ and transmittance as high as 85%. $H_2O$gas permeation through the film was 0.35 g/$m^2$ in a day. These properties are enough on optical film for the plastic LCD substrate or touch panel. Both refractive index and sheet resistance of ITO was found to be very sensitive to $O_2$ flow rate. Oxygen flow conditions have been optimized from 4 to 5 SCCM at $10^{-3}$torr. It is also shown that both thickness of $SnO_2$ and refractive index of $SiO_2$ decrease as $O_2$ flow rate increases.