• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.81-82
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• 2007

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C\;and\;420^{\circ}C$, respectively. After the as-grown single crystal $CdGa_2Se_4$ thin films were annealed in Cd-, Se-, and Ga -atmospheres, the origin of point defects of single crystal $CdGa_2Se_4$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd},\;V_{Se},\;Cd_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cd-atmosphere converted single crystal $CdGa_2Se_4$ thin films to an optical p-type. Also, we confirmed that Ga in $CdGa_2Se_4$/GaAs did not form the native defects because Ga in single crystal $CdGa_2Se_4$ thin films existed in the form of stable bonds.

• Proceedings of the KSAR Conference
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• 2003.06a
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• pp.51-51
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• 2003

Oct-4 is a maternally expressed octamer-binding protein encoded by the murine Oct-4 gene. It is present in unfertilized oocytes, but also in the inner cell mass and in primordial germ cells. In addition, Oct-4 is the first transcrition factor described that is specific for the blastocysts stage bovine embryos. The spatial and temporal expression patterns were further determined using Immunohistochemistry. With this technique Oct-4 protein expression is detected in the oocyte, in the blastocyst. After pregnancy Oct-4 expression is restricted ovary and placental tissue. Therefore Oct-4 is a transcription factor that is specifically expressed in cells participating in the pregnancy of Korean native cattle. These result suggest that Oct-4 localization and expression may contribute to the defects in the developmental normal seen in Korean native cattle.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.377-377
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• 2010

The $AgInS_2$ epilayers with chalcopyrite structure grown by using a hot-wall epitaxy (HWE) method have been confirmed to be a high quality crystal. After the as-grown $AgInS_2$/GaAS was annealed in Ag-, S-, and In-atmosphere, the origin of point defects of the $AgInS_2$/GaAs has been investigated by using the photoluminescence (PL) at 10 K. The native defects of $V_{Ag}$, $V_s$, $Ag_{int}$, and $S_{int}$ obtained from PL measurement were classified to donors or acceptors type

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.297.2-297.2
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• 2013

Scavenging electricity from wasteful energy resources is currently an important issue and piezoelectric nanogenerators (NGs) based on zinc oxide (ZnO) are promising energy harvesters that can be adapted to various portable, wearable, self-powered electronic devices. Although ZnO has several advantages for NGs, the piezoelectric semiconductor material ZnO generate an intrinsic piezoelectric potential of a few volts as a result of its mechanical deformation. As grown, ZnO is usually n-type, a property that was historically ascribed to native defects. Oxygen vacancies (Vo) that work as donors exist in ZnO thin film and usually screen some parts of the piezoelectric potential. Consequently, the ZnO NGs' piezoelectric power cannot reach to its theoretical value, and thus decreasing the effect from Vo is essential. In the present study, c-axis oriented insulator-like sputtered ZnO thin films were grown in various temperatures to fabricate an optimized nanogenerator (NGs). The purity and crystalinity of ZnO were investigated with photoluminescence (PL). Moreover, by introducing a p-type polymer usually used in organic solar cell, it was discussed how piezoelectric passivation effect works in ZnO thin films having different types of defects. Prepared ZnO thin films have both Zn vacancies (accepter like) and oxygen vacancies (donor like). It generates output voltage 20 time lager than n-type dominant semiconducting ZnO thin film without p-type polymer conjugating. The enhancement is due to the internal accepter like point defects, zinc vacancies (VZn). When the more VZn concentration increases, the more chances to prevent piezoelectric potential screening effects are occurred, consequently, the output voltage is enhanced. Moreover, by passivating remained effective oxygen vacancies by p-type polymers, we demonstrated further power enhancement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.3-6
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• 2001

In common globular proteins, the native form is in its most stable state. However, the native form of inhibitory serpins (serine protease inhibitors) and some viral membrane fusion proteins is in a metastable state. Metastability in these proteins is critical to their biological functions. Our previous studies revealed that unusual interactions, such as side-chain overpacking, buried polar groups, surface hydrophobic pockets, and internal cavities are the structural basis of the native metastability. To understand the mechanism by which these structural defects regulate protein functions, cavity-filling mutations of a 1-antitrypsin, a prototype serpin, were characterized. Increasing conformational stability is correlated with decreasing inhibitory activity. Moreover, the activity loss appears to correlate with the decrease in the rate of the conformational switch during complex formation with a target protease. We also increased the stability of a 1-antitrypsin greatly via combining various stabilizing single amino acid substitutions that were distributed throughout the molecule. The results showed that a substantial increase of stability, over 13 kcal/mol, affected the inhibitory activity with a correlation of 11% activity loss per kcal/mol. The results strongly suggest that the native metastability of proteins is indeed a structural design that regulates protein functions and that the native strain of a 1-antitrypsin distributed throughout the molecule regulates the inhibitory function in a concerted manner.

• Electrical & Electronic Materials
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• v.14 no.12
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• pp.3-6
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• 2001

In common globular proteins, the native form is n its most stable state. However, the native form of inhibitory serpins (serine protease inhibitors) and some viral membrane fusion proteins is in a metastable state. Metastability in these proteins is critical to their biological functions. Our previous studies revealed that unusual interactions, such as side-chain overpacking, buried polar groups, surface hydrophobic pockets, ad internal cavities are the structural basis of the native metastability. To understand the mechanism by which these structural defects regulate protein functions, cavity-filling mutations of $\alpha$1-antitrypsin, a prototype serpin, were characterized. Increasing conformational stability is correlated with decreasing inhibitory activity. Moreover, the activity loss appears to correlate with the decrease in the rate of the conformational switch during complex formation with a target protease. We also increased the stability of $\alpha$1-antitrypsin greatly via combining various stabilizing single amino acid substitutions that were distributed throughout the molecule. The results showed that a substantial increase of stability, over 13 kcal/mol, affected the inhibitory activity with a correlation of 11% activity loss per kcal/mol. The results strongly suggest that the native metastability of proteins is indeed a structural design that regulates protein functions and that the native strain of $\alpha$1-antitrypsin distributed throughout the molecule regulates the inhibitory function in a concerted manner.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.3-6
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• 2001

In common globular proteins, the native form is in its most stable state. However, the native form of inhibitory serpins (serine protease inhibitors) and some viral membrane fusion proteins is in a metastable state. Metastability in these Proteins is critical to their biological functions. Our previous studies revealed that unusual interactions, such as side-chain overpacking, buried polar groups, surface hydrophobic pockets, and internal cavities are the structural basis of the native metastability. To understand the mechanism by which these structural defects regulate protein functions, cavity-filling mutations of ${\alpha}$1-antitrypsin, a prototype serpin, were characterized. Increasing conformational stability is correlated with decreasing inhibitory activity. Moreover, the activity loss appears to correlate with the decrease in the rate of the conformational switch during complex formation with a target protease. We also increased the stability of ${\alpha}$1-antitrypsin greatly via combining various stabilizing single amino acid substitutions that were distributed throughout the molecule. The results showed that a substantial increase of stability, over 13 kcal/mol, affected the inhibitory activity with a correlation of 11% activity loss per kcal/mol. The results strongly suggest that the native metastability of proteins is indeed a structural design that regulates protein functions and that the native strain of e 1-antitrypsin distributed throughout the molecule regulates the inhibitory function in a concerted manner.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.86-87
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• 2009

High quality $CuInSe_2$ (CIS) were grown on GaAs substrate by using the hot wall epitaxy method. The behavior of point defects in the CIS layer investigated by using photoluminescence (PL) at 10 K. Point defects originating from $V_{Cu}$, $V_{Se}$, $Cu_{int}$, and $Se_{int}$ were classified as donor or acceptor types. These PL results also led us to confirm that the p-type CIS layer had obviously converted into n-type after the Cu atmosphere treatment. Finally, we found that the In in the CIS layer did not form the native defects, because In existed in the form of stable bonds in the CIS layer.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.14 no.2
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• pp.33-41
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• 2005

ZnO epilayer was synthesized by the pulsed laser deposition(PLD) process on Al$_2$O$_3$ subsorte after irradiating the surface of ZnO sintered pellet by ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A1203) substrate at the 境mperature of 400$^{circ}$C. The crystalline structure of epilayer was investigated by the Photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measure with Hall effect by van der Pauw mothod are $8.27\times$1016cm$^{-3}$ and 299 cm$^{2}$/V$\cdot$s at 293 K respectively, The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, E$_g$(T)= 3.3973 eV - ($2.69\times$ 10$^{-4}$ eV/K)T$^{2}$/(T + 463K). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of V$_{Zn}$, V$_{O}$, Zn$_{int}$, and O$_{int}$ obtained by PL measurements were classified as a donor or acceptor type. In addition we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/Al$_2$O$_3$ did not firm the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.154-154
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• 2003

A stoichiometric mixture of evaporating materials for CuGaSe2 single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe2, it was found tetragonal structure whose lattice constant at and co were 5.615 ${\AA}$ and 11.025 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaSe2 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (MWE) system. The source and substrate temperatures were Slot and 450$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (UXD). The carrier density and mobility of CuGaSe2 single crystal thin films measured with Hall effect by van der Pauw method are 5.0l${\times}$10$\^$17/ cm$\^$-3/ and 245 $\textrm{cm}^2$/V$.$s at 293K, respectively. The temperature dependence of the energy band gap of the CuGaSe2 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 1.7998 eV - (8.7489${\times}$10$\^$-4/ eV/K)T$^2$/(T + 335 K. After the as-grown CuGaSe2 single crystal thin films was annealed in Cu-, Se-, and Ca-atmospheres, the origin of point defects of CuGaSe2 single crystal thin films has been investigated by the photoluminescence(PL) at 10 K The native defects of V$\_$CU/, V$\_$Se/, Cu$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted CuGaSe2 single crystal thin films to an optical n-type. Also, we confirmed that Ga in CuGaSe2/GaAs did not form the native defects because Ga in CuGaSe2 single crystal thin films existed in the form of stable bonds.