• Journal of the Korean Institute of Rural Architecture
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• v.22 no.2
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• pp.1-8
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• 2020

This study is intended to derive the adaptive reuse techniques through the history and aspects of new construction, extension, repair, and other works, limited to the deep and narrow lots facing Seongan-gil and Nammun-gil in Nammun-ro 2 ga of Cheongju, the historic urban area. The results are as follows. 1) In the case of newly built reinforced concrete buildings, the central part of the top floor of the residence or all floors are opened to the open space(void) to facilitate lighting and ventilation. This is developed as a convection phenomenon due to the temperature difference from the slits between buildings, which affects the entire air flow of the block. 2) The buildings of extension and repair are composed of two-story masonry or steel frame, both the front store facing the road and the house on the back, but it looks like one because it is in contact with each other. If only a small gap between the front and rear buildings is restored to an external space or a space equipped with sun light, a small breath can be provided in lighting and ventilation. 3) The existing two-story wooden stores and houses have lost their external space due to repairs. With minimal intervention to restore the small courtyard, slits, and space under the eaves, it will not only improve lighting and ventilation, but also create a unique appearance as a segment of the elongated store.

• Restorative Dentistry and Endodontics
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• v.27 no.4
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• pp.403-410
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• 2002

Several ways of curing are being tried to improve material's properties and reduce marginal gap. However, all are considering about the pattern of light intensity. It was noted from the preliminary study the change of light wavelength from filter changing may give an impact on material's property and microleakage. The object of this study was to verify the effect of filters with various wavelength width on the microhardness and microleakage of composite resin ; hybrid type of DenFil and submicron hybrid type of Esthet X. Composite resins were cured using 3 kinds of filter; narrow-banded(465-475 nm), mid-banded(430-470 nm), wide-banded(400-500 nm). After the estimation of microhardness. degree of dye penetration and the maximum gap from SEM evaluation were done between 4 groups that showed no difference in microhardness value of the lower surface . The results were as follows : 1 Adequate microhardness could not be gained with a narrow-banded filter irrespective of curing time. At the upper surface, DenFil should be polymerized with middle or wide-banded filter for 20 seconds at least, while Esthet X be col$.$ed with middle or wide-banded filter for 30 seconds at least to get simitar hardness value to control group. 2. There was little dye penetration in enamel margin, but all dentin margins skewed much more dye penetration irrespective of curing conditions. Although there was no statistical difference, groups cured with mid-banded filter for 40 seconds and with wide-width filter for 20 seconds showed relatively less dye penetration. 3. It was revealed from the SEM examination that group cured with wide-banded filter had the smallest gap without statistical significance. Spearman's rho test showed that the correlation between the results of dye penetration and SEM examination was very low. From these results, it could be concluded that curing with wide-width filter would be better than the other techniques, even though the curing technique using mid-width filter seems to have its own unique advantage.

• Transactions of the Korean hydrogen and new energy society
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• v.24 no.2
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• pp.107-112
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• 2013

The ZnO is able to produce hydrogen from water however it can only absorb ultraviolet region due to its 3.37eV of wide band gap. Therefore efficiency of solar hydrogen production is low. In this work we report investigation results of improved visible light photo-catalytic properties of CdSe quantum dots(QDs) sensitized ZnO nanorod heterostructures. Hydrothermally vertically grown ZnO nanorod arrays on FTO glass were sensitized with CdSe by using SILAR(successive ionic layer adsorption and reaction) method. Morphology of grown ZnO and CdSe sensitized ZnO nanorods had been investigated by FE-SEM that shows length of $2.0{\mu}m$, diameter of 120~150nm nanorod respectively. Photocatalytic measurements revealed that heterostructured samples show improved photocurrent density under the visible light illumination. Improved visible light performance of the heterostructures is resulting from narrow band gap of the CdSe and its favorable conduction band positions relative to potentials of ZnO band and water redox reaction.

• The Journal of Advanced Prosthodontics
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• v.12 no.5
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• pp.283-290
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• 2020

PURPOSE. The present study aimed to evaluate the clinical applicability of monolithic zirconia (MZ) crowns of different thickness via determination of fracture resistance and marginal fit. MATERIALS AND METHODS. MZ crowns with 0.5, 0.8, 1.0, and 1.5 mm thickness and porcelain fused to metal (PFM) crowns were prepared, ten crowns in each group. Marginal gaps of the crowns were measured. All crowns were aged with thermal cycling (5 - 55℃/10000 cycle) and chewing simulator (50 N/1 Hz/lateral movement: 2 mm, mouth opening: 2 mm/240000 cycles). After aging, fracture resistance of crowns was determined. Statistical analysis was performed with one-way ANOVA and Tukey's HDS post hoc test. RESULTS. Fracture loads were higher in the PFM and 1 mm MZ crowns compared to 0.5 mm and 0.8 mm crowns. 1.5 mm MZ crowns were not broken even with the highest force applied (10 kN). All marginal gap values were below 86 ㎛ even in the PFM crowns, and PFM crowns had a higher marginal gap than the MZ crowns. CONCLUSION. The monolithic zirconia exhibited high fracture resistance and good marginal fit even with the 0.5 mm thickness, which might be used with reduced occlusal thickness and be beneficial in challengingly narrow interocclusal space.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.230-233
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• 2001

FeSi2/Si Layer were grown using FeSi2, Si wafer by the chemical transport reactio nmethod. The directoptical energy gap was found to be 0.871eV at 300 K. The Hall effect is a physical effect arising in matter carrying electric current inthe presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. IN this paper, we study electrical properties of FeSi2/Si layer. And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it applicationVarious phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.234-237
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• 2001

FeSi2/Si Layer were grown using FeSi2, Si wafer by the chemical transport reactio nmethod. The directoptical energy gap was found to be 0.871eV at 300 K. The Hall effect is a physical effect arising in matter carrying electric current inthe presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. IN this paper, we study electrical properties of FeSi2/Si layer. And then we measured Hall coefficient Hall mobility,carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it applicationVarious phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.10
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• pp.1311-1317
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• 2001

To investigate only the effects of the stratified mixture distribution on initial flame propagation and combustion characteristics, the instantaneous equivalence ratio in the spark plug gap and combustion pressure were measured simultaneously In a constant volume chamber, To induce the stratified propane-air mixture distribution near the spark plug, counter-flow typed mixture injection system was used under the constant mean equivalence ratio $\Phi$$\_$mean/= 1.0 The instantaneous equivalence ratio was measured by a single-shot Raman scattering with narrow-band KrF excimer laser. The measuring error was within the limit of $\pm$ 3.5% provided that the proposed method was applied to the measured Raman signals. Judging from mass fraction burned derived from the measured pressure, the optimum combustion characteristics were shown under the condition that the local equivalence ratio in the spark plug was near 1.28$\pm$0.04, and these characteristics were more remarkable at the initial stage of combustion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.234-237
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• 2001

FeSi$_2$/Si Layer were grown using FeSi$_2$, Si wafer by the chemical transport reaction method. The directoptical energy gap was found to be 0.871ev at 300 K. The Hall effect is a physical effect arising in matter carrying electric current in the presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. In this paper, we study electrical properties of FeSi$_2$/Si layer And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important Part for it application Various phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.230-233
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• 2001

FeSi$_2$ Layer were grown using FeSi$_2$, Si wafer by the chemical transport reaction method. The directoptical energy gap was found to be 0.87leV at 300 K. The Hall effect is a Physical effect arising in matter carrying electric current in the presence of a magnetic field. The effect is named after the American physicist E.H. Hall, who discovered it in 1879. In this paper, we study electrical properties of FeSi$_2$/Si layer. And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it application various phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.1
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• pp.80-84
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• 2014

The discharge characteristics of Surface Dielectric Barrier Discharge (SDBD) reactor are investigated to find optimal driving condition with adjusting various parameter. When the high voltage with sine wave form is applied to SDBD source, successive pulsed current waveforms are observed owing to multiple ignitions through the long discharge channel and wall charge accumulation on the dielectric surface. The discharge voltage, total charge between dielectrics, mean energy and power are calculated from measured current and voltage according to electrode gap and dielectric thickness. Discharge mode transition from filamentary to diffusive glow is observed for narrow gap and high applied voltage case. However, when the diffusive discharge is occurred with high applied voltage, the actual firing voltage is always lower than that with low driving voltage. The $Si_3N_4$, $MgF_2$, $Al_2O_3$ and $TiO_2$ are considered for dielectric protection and high secondary electron emission coefficient. SDBD with $MgF_2$ shows the lowest breakdown voltage. $MgF_2$ thin film is proposed as a protection layer for low voltage atmospheric dielectric barrier discharge devices.