• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.303.1-303.1
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• 2014

좋은 전기적 특성을 가지면서 소자의 크기를 줄이기에 용이한 Gate-all-around (GAA) twin Si nanowire field-effect transistors (TSNWFETs)의 연구가 많이 진행되고 있다. Switching 특성과 단채널 효과가 없는 TSNWFETs의 특성은 GAA 구조의 본질적인 특성이다. TSNWFETs는 기존의 single Si nanowire TSNWFETs와 bulk FET에 비하여 Drive current가 nanowire의 지름에 많은 영향을 받지 않는다. 그러나 TSNWFETs의 전체 on-current는 훨씬 작고 nanowire의 지름이 작아지면서 줄어들게 되면서 소자의 sensing speed와 sensing margin 특성의 악화를 가지고 온다. GAA TSNWFETs의 제작 및 전기적 실험에 대한 연구는 많이 진행되었으나, GAA TSNWFETs의 전기적 특성에 대한 이론적 연구는 매우 적다. 본 연구에서는 GAA TSNWFETs의 nanowire 크기에 따른 전기적 특성을 관찰하였다. GAA TSNWFETs와 bulk FET의 전기적 특성을 양자역학을 고려하여 3차원 TCAD 시뮬레이션을 툴을 이용하여 계산하였다. GAA TSNWFETs와 bulk FET의 전류-전압 특성 계산을 통해 on-current 크기, subthreshold swing, drain-induced barrier lowering (DIBL), gate-induced drain leakage를 보았다. 전류가 흐르는 경로와 전기적 특성의 물리적 의미에 대한 연구를 위해 TSNWFETs에서의 전류 밀도, conduction band edge, potential 특성을 분석하였다. 시뮬레이션 결과를 통해 Switching 특성, 단채널 효과에 대한 면역 특성, nanowire의 단면적에 따른 전류 흐름을 보았다. nanowire의 크기가 작아지면서 DIBL이 증가하고 문턱전압과 전체 on-current는 감소하면서 소자의 특성이 악화된다. 이러한 결과는 GAA TSNWFETs의 전기적 특성을 이해하고 좋은 소자 특성을 위한 구조를 연구하는데 많은 도움이 될 것이다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.30.2-30.2
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• 2010

Nano-scale p-n junction can generate various nano-scale functional devices such as nanowire light emitting diode, nanowire solar cell, and nanowire sensor. The core shell type nanowire p-n junction has been considered for the high efficient devices in many previous reports. On the other hand, although device efficiency is relatively lower, the cross bar type p-n junction has simple topological structure, suggested by C.M. Lieber group, to integrate easily many p-n junction devices in one board. In this study, for the integration of the cross bar nanowire p-n junction device, a simple fabrication route, employed dielectrophoretic array and direct printing techniques, was demonstrated by the successful fabrication and programmable integration of the nanowire cross bar p-n junction solar cell. This direct printing process will give the single nanowire solar cell the opportunity of the integration on the circuit board with other nanowire functional devices.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2014.04a
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• pp.81-82
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• 2014

Recently it is often reported about toxic nanomaterials to organisms. In other words, it is called nanotoxicity, toxic nanomaterials have extremely toxic properties. Zinc oxide is widely used as a promising nanomaterials, but some researchers are warning that nanotype zinc oxide has nanotoxicity. One of typical zinc oxide materials is a zinc oxide nanowire, especially, there is no technique which is detecting a zinc oxide nanowire because of its geometric. In here, we use reduced graphene oxide in order to detect zinc oxide nanowire and use DNA immobilized cantilever sensor, we detect graphene wrapped zinc oxide nanowire. Detection of a zinc oxide nanowire is measured by shifting of cantilever's resonance frequency based on vibration theory. It is proved that cantilever sensor is valid for nanomaterial detection. We showed that detection of a zinc oxide nanowire is successful.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.177.2-177.2
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• 2014

현재 플렉시블 전자기기에 대한 수요가 증가함에 따라 Ag nanowire는 ITO 대체용 투명전극 물질로 주목받고 있다. Ag nanowrie 투명전극은 면저항이 약 $300{\Omega}/sq$ 정도인 PEDOT 투명전극 보다 성능이 우수하지만, 표면에 나노와이어의 적층으로 100 nm 크기의 돌기들이 존재하여 균일한 표면특성이 요구되는 투명전극에 불리한 요인이 된다. Ag nanowire를 투명전극으로 사용하여 OLED를 제조할 경우, 40 nm~100 nm의 두께를 갖는 HTL층보다 투명전극 표면의 Rpv 값이 큰 경우 Leakage current가 증가하므로 이러한 돌기들을 감소시키는 것이 Ag nanowire를 투명전극에 적용할 수 있는 중요한 요건이 된다. 본 연구에서는 PET film 위에 Ag nanowire를 얇게 코팅하여 투과도 약 87%, 면저항 $20{\Omega}/sq$ 이하의 특성을 갖는 투명전극을 제조하였다. 그리고 Ag nanowire를 코팅한 투명전극의 표면 Roughness를 감소시키기 위해 Roll press를 이용하여 나노와이어를 물리적으로 압착하였고, 압착된 Ag nanowire 투명전극 위에 PEDOT를 코팅하여 전도도 및 표면 Roughness를 감소시키는 연구를 진행하였다.

• Journal of Adhesion and Interface
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• v.24 no.2
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• pp.54-59
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• 2023

Silver nanowire-based transparent electrodes are very attractive as a next-generation flexible and transparent electrode that can replace ITO-based flexible electrodes because they have excellent conductivity, transmittance and mechanical flexibility. However, weak understanding of the silver nanowire solution for the fabrication of silver nanowire-based transparent electrodes often cause abnormal operation of the electrical device or peeling problem of the electrode films when applied to electronic devices. Here, we studied a Hydroxypropyl Methylcellulose (HPMC) adhesion promoter, which is one of the additives for silver nanowire solution, to improve the understanding of silver nanowire solution. In detail, it is characterized how the HPMC changes the properties of silver nanowire solution and silver nanowire film, which is fabricated with silver nanowire solution including the HPMC adhesion promoter. As the characteristics of solution, polar surface tension and dispersive surface tension were measured. As the film characteristics, surface energy, surface morphology, silver nanowire density, and sheet resistance were analyzed.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.424-424
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• 2012

ZnO는 수열합성법을 통해 저온에서 단결정으로 성장할 수 있기 때문에 광전소자 및 압전소자로 응용되고 있으나, 성장된 ZnO nanowire 내부 산소 결함 및 표면에 OH기의 흡착에 의해 소자특성 저하를 발생시킨다. 본 연구에서는 ZnO의 결함의 최소화를 위해 Glass 기판에 수열합성법으로 성장된 ZnO nanowire를 ICP 플라즈마 장치를 이용하여 O2 25 sccm, Base Pressure $1.5{{\times}}10^{-3}$ Torr을 기준으로 파워와 시간에 따라 표면처리 하였다. 플라즈마 처리된 ZnO nanowire의 결함특성과 형상을 XPS와 FE-SEM를 통하여 분석하였으며, ZnO nanowire의 소자특성을 평가를 위해 Kapton Film/AZO/ZnO nanowire/PMMA/Au 구조의 발전기를 제작하였다. 150 W, 10 min에서 532.4 eV의 -OH결합이 최소화됨을 확인하였으며, 이를 이용하여 Flexible ZnO nanowire 발전기 제작 했을 경우 최대 Voltage 5 V, Current 156 nA 전기적 특성을 확인하였다.

• Transactions on Electrical and Electronic Materials
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• v.14 no.3
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• pp.156-159
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• 2013

The electrical properties of ZnO nanowire field effect transistors (FETs) have been investigated depending on various diameters of nanowires. The ZnO nanowires were synthesized with an Au catalyst on c-plane $Al_2O_3$ substrates using hot-walled pulsed laser deposition (HW-PLD). The nanowire FETs are fabricated by conventional photo-lithography. The diameter of ZnO nanowires is simply controlled by changing the thickness of the Au catalyst metal, which is confirmed by FE-SEM. It has been clearly observed that the ZnO nanowires showed different diameters simply depending on the thickness of the Au catalyst. As the diameter of ZnO nanowires increased, the threshold voltage of ZnO nanowires shifted to the negative direction systematically. The results are attributed to the difference of conductive layer in the nanowires with different diameters of nanowires, which is simply controlled by changing the catalyst thickness. The results show the possibility for the simple method of the fabrication of nanowire logic circuits using enhanced and depleted mode.

• Journal of Sensor Science and Technology
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• v.29 no.4
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• pp.227-231
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• 2020

Silver nanowire random networks are promising candidates for replacing indium tin oxide (ITO) as transparent and conductive electrodes. They can also be used as transparent heating films with self-cleaning and defogging properties. By virtue of the Joule heating effect, silver nanowire random networks can be heated when voltage bias is applied; however, they are unsuitable for long-term use. In this work, we study the Joule heating of silver nanowire random networks embedded in polymers. Silver nanowire random networks embedded in polymers exhibit breakdown under the application of electric current. Their surface morphological changes indicate that nanoparticle formation may be the main cause of this electrical breakdown. Numerical analyses are used to investigate the temperatures of the silver nanowire and substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.641-641
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• 2013

We report the transparentsilver nanowire electrode fabricated by a direct printing process, liquid-bridge-mediated nanotransfer molding. We fabricated silver nanowire arrays by liquidbridge- mediated nanotransfer molding using the silver nanoparticle ink and PEDOT:PSS polymer. Weinvestigated the formation of silver nanowire arrays by SEM and transmittance of the transparent silver nanowire electrode. We also measured the conductivity to confirm the potential of our approach.

• Proceeding of EDISON Challenge
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• 2017.03a
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• pp.412-416
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• 2017

CMOS device에서 off leakage current로 인한 power dissipation 문제는 미래 소자에 주어진 주요한 과제이다. Nanowire FET은 이러한 문제를 해결할 주요 미래소자로 각광받고있다. 하지만 nanowire FET을 공정할 때 채널 에칭을 완벽한 원형 구조로 가지는 것이 어렵기 때문에 타원형으로 시뮬레이션을 진행해 볼 필요성이 있다. 본 논문에서는 nanowire의 aspect ratio, crystal orientation의 변화에 따른 nanowire FET의 전압-전류 특성 및 transport 특성을 관찰하는 연구를 진행하였다. 시뮬레이션 결과, [100] 방향은 완벽한 원형구조에서 최적인 반면에 [110] 방향은 타원형으로 모델링함에 있어서 장점이 있는 것으로 나타났다.