• Journal of the Korean Electrochemical Society
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• v.14 no.4
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• pp.219-224
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• 2011

Using an electrolyte additive, we examined, for the first time, a novel self-ordering regime of 160~200 V in high-field anodization which had been used for a fast fabrication of self-ordered anodic alumina nanotemplate. FE-SEM analyses conducted after the high-field anodization, pulse detachment and chemical widening of pores showed the relationship of 2.2 nm/V in this voltage range, which was identical to the previously reported one in the literature. The growth rate of the alumina film was about 60 um/hr, which was 30 times faster than that of phosphoric acid mild anodization. This study provides a new process for the fast fabrication of nanotemplates with interpore distances larger than 300 nm.

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.366-370
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• 2007

Nano-scopic holes which are distributed densely and uniformly were fabricated on $SiO_2$ surface. Self-assembling resists were used to produce a layer of uniformly distributed parallel poly methyl methacrylate (PMMA) cylinders in a polystyrene (PS) matrix. The PMMA cylinders were degraded and removed by acetic acid rinsing. Subsequently, PS nanotemplates were fabricated. The patterned holes of PS template were approximately $8{\sim}30\;nm$ wide, 40 nm deep, and 60 nm apart. The porous PS template was used as a dry etching mask to transfer the pattern of PS template into the silicon oxide thin film during reactive ion etching (RIE) process. The sizes of the patterned holes on $SiO_2$ layer were $9{\sim}33\;nm$. After pattern transfer by RIE, uniformly distributed holes of which size were in the range of $6{\sim}22\;nm$ were fabricated on Si substrate. Sizes of the patterned holes were controllable by PMMA molecular weight.