• Korean Chemical Engineering Research
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• v.52 no.1
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• pp.26-39
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• 2014

Cu interconnection in electronic devices is fabricated via damascene process including Cu electrodeposition. In this review, Cu electrodeposition and superfilling for fabricating Cu interconnection are introduced. Superfilling results from the influences of organic additives in the electrolyte for Cu electrodeposition, and this is enabled by the local enhancement of Cu electrodeposition at the bottom of filling feature formed on the wafer through manipulating the surface coverage of organic additives. The dimension of metal interconnection has been constantly reduced to increase the integrity of electronic devices, and the width of interconnection reaches the range of few tens of nanometer. This size reduction raises the issues, which are the deterioration of electrical property and the reliability of Cu interconnection, and the difficulty of Cu superfilling. The various researches on the development of organic additives for the modification of Cu microstructure, the application of pulse and pulse-reverse electrodeposition, Cu-based alloy superfilling for improvement of reliability, and the enhancement of superfilling phenomenon to overcome the current problems are addressed in this review.

• Journal of the Korean Ceramic Society
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• v.41 no.1
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• pp.76-80
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• 2004

Nano-sized ZnO colloids were prepared by use of spray combustion method. for combustion reaction, $Zn(NO_3)_2{\cdot}6H_2O$ and $CH_6N_4O$ were employed as an oxidizer and a fuel. Exothermic peak was shown at $230^{\circ}C$ by DTA/TGA, and it was considered as a combustion reaction followed by ignition of the precursor mixture. In case of spray combustion method, because insufficient contents of molecules and radicals generated from precursor droplets may lead an incomplete igmition, the ignition temperature of combustion chamber was chosen at $500^{\circ}C$. For diminishing aerosol coagulation, the droplet number concentration was reduced by filter media. The fluid was laminar with 2.5 seconds of aerosol residence time. The synthesized colloids had spherical shape with 180 nanometer size, and the crystalline phase was ZnO with hexagonal structure.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.61-66
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• 2005

In order to make submicron cell for spin-injection device, lift-off method using Pt stencil and wet etching was chosen. This approach allows batch fabrication of stencil substrate with electron-beam lithography. It simplifies the process between magnetic film stack deposition and final device testing, thus enabling rapid turnaround in sample fabrication. Submicron junctions with size of $200nm{\times}300nm$ and $500nm{\times}500nm$ 500 nm and pseudo spin valve structure of $CoFe(30{\AA})/Cu(100{\AA})/CoFe(120{\AA}$) was deposited into the nanojunctions. MR ratio was 0.8 and $1.1{\%}$, respectively and spin transfer effect was confirmed with critical current of $7.65{\times}10^7A/cm^2$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.3
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• pp.159-167
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• 2005

Quantization effects (QEs), which manifests when the device dimensions are comparable to the de Brogile wavelength, are becoming common physical phenomena in the present micro-/nanometer technology era. While most novel devices take advantage of QEs to achieve fast switching speed, miniature size and extremely small power consumption, the mainstream CMOS devices (with the exception of EEPROMs) are generally suffering in performance from these effects. In this paper, an analytical model accounting for the QEs and poly-depletion effects (PDEs) at the silicon (Si)/dielectric interface describing the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of MOS devices with thin oxides is developed. It is also applicable to multi-layer gate-stack structures, since a general procedure is used for calculating the quantum inversion charge density. Using this inversion charge density, device characteristics are obtained. Also solutions for C-V can be quickly obtained without computational burden of solving over a physical grid. We conclude with comparison of the results obtained with our model and those obtained by self-consistent solution of the $Schr{\ddot{o}}dinger$ and Poisson equations and simulations reported previously in the literature. A good agreement was observed between them.

• Polymer(Korea)
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• v.36 no.4
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• pp.536-541
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• 2012

The effects of silica content were studied on UV curing characteristics and defect formations in imprinted patterns of hundreads nanometer size for the photo-curable imprinting composites with silica particles. An increase in elasticity and a decrease in shrinkage were observed with an increase in silica content in the imprinting resin which was UV cured at room temperature. However, the patterned nano-pillars were stuck together with neighboring nano-pillars if the amount of silica is more than 7 wt%. This can be ascribed to the increased viscosity of imperfectly cured resin due to the obstruction of the photo-reaction by silica particles. Addition of silica to the imprinting resin is useful in enhancing the strength of the cured resin although it is difficult to get good imprinted patterns for the resin with more than 7 wt% of silica due to the reduction of photo-reaction conversion.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.8
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• pp.1885-1890
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• 2013

In this paper, the electrical properties of nanoscale junctionless p-channel MuGFET at cryogenic temperature have been analyzed experimentally. The experiment was performed using a cryogenic probe station which uses the liquid Helium. It has been observed that the drain current oscillation at low drain voltage and cryogenic temperature was more pronounced in junctionless transistor than in accumulation mode transistor. The reason for more marked oscillation is due to the smaller electrical cross section area of the inversion channel which is formed at the center of silicon film in junctionless transistor. It was also observed that the drain current and maximum transconductance were increased as the measurement temperature increased. This is resulted from the increase of hole mobility and the decrease of the threshold voltage as the measurement temperature increases. The drain current oscillation due to the quantum effects can be occurred up to the room temperature when the device size scales down to the nanometer level.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.5
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• pp.205-211
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• 2022

The Granule Spray in Vacuum (GSV) process is a method of forming a dense nanostructured ceramic coating film by spraying ceramic granules on a substrate at room temperature in a vacuum. In the Granule Spray, the granules made by agglomerating particles with the size from submicrometer to micrometer can be sprayed into the substrate. Once the granules were squashed upon collision with the substrate, they become several dozens of nanometer-sized crystals in vacuum process. The zirconia of the monoclinic phase transform into tetragonal phase at 1150℃. At this time, its volume is changed by about 6.5 %. For this reason, it is widely held that it is difficult to acquire a compact of monoclinic zirconia sinter. In this study, the effect of particle treatment temperature and standoff distance on the substrate of zirconia granules were investigated in GSV. Also, particle treatment temperature, standoff distance, coating efficiency, and microstructure of the film were considered in forming the monoclinic zirconia coating film in GSV without any heating process. The deposited films exhibited monoclinic zirconia phase without any other detectable phase by X-ray diffractometer (XRD).

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.518-522
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• 2008

The miniaturization of device size and multilevel interlayers have been developed by ULSI circuit devices. These submicron processes cause serious problems in conventional metallization due to the solubility of silicon and metal at the interface, such as an increasing contact resistance in the contact hole and interdiffusion between metal and silicon. Therefore it is necessary to implement a barrier layer between Si and metal. Thus, the size of multilevel interconnection of ULSI devices is critical metallization schemes, and it is necessary reduce the RC time delay for device speed performance. So it is tendency to study the Cu metallization for interconnect of semiconductor processes. However, at the submicron process the interaction between Si and Cu is so strong and detrimental to the electrical performance of Si even at temperatures below $200^{\circ}C$. Thus, we suggest the tungsten-carbon-nitrogen (W-C-N) thin film for Cu diffusion barrier characterized by nano scale indentation system. Nano-indentation system was proposed as an in-situ and nanometer-order local stress analysis technique.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.6
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• pp.272-279
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• 2015

$Y_2O_3:Eu^{3+}$ is an excellent red-emitting phosphor, which has been widely used for display devices due to highly luminescent property and chemical stability. In this study, $Y_2O_3:Eu^{3+}$ red phosphors were prepared using the solid state reaction and RF thermal plasma synthesis. The particle size of $Y_2O_3:Eu^{3+}$ phosphors obtained by the solid state reaction varied from 10 to $20{\mu}m$, and 30~100 nanometer sized $Y_2O_3:Eu^{3+}$ particles were obtained from a liquid form of raw material through RF thermal plasma synthesis without an additional heat treatment. Photoluminescence measurements of the obtained $Y_2O_3:Eu^{3+}$ particles showed a red emission peak at 611 nm ($^5D_0{\rightarrow}^7F_2$). PL intensity of red nano phosphors prepared by RF thermal plasma synthesis was comparable to that of red phosphors prepared by the solid state reaction, indicating that nano-sized $Y_2O_3:Eu^{3+}$ red phosphors could be successfully synthesized using one-step process of RF thermal plasma.

• Journal of the Korean Electrochemical Society
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• v.15 no.2
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• pp.95-100
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• 2012

$LiFePO_4$ is an attractive cathode material due to its low cost, good cyclability and safety. But it has low ionic conductivity and working voltage impose a limitation on its application for commercial products. In order to solve these problems, the iron($Fe^{2+}$)site in $LiFePO_4$ can be substituted with other transition metal ions such as $Mn^{2+}$ in pursuance of increase the working voltage. Also, reducing the size of electrode materials to nanometer scale can improve the power density because of a larger electrode-electrolyte contact area and shorter diffusion lengths for Li ions in crystals. Therefore, we chose electrospinning as a general method to prepare $Li[Fe_{0.9}Mn_{0.1}]PO_4$ to increase the surface area. Also, there have been very a few reports on the synthesis of cathode materials by electrospinning method for Lithium ion batteries. The morphology and nanostructure of the obtained $Li[Fe_{0.9}Mn_{0.1}]PO_4$ nanofibers were characterized using scanning electron microscopy(SEM). X-ray diffraction(XRD) measurements were also carried out in order to determine the structure of $Li[Fe_{0.9}Mn_{0.1}]PO_4$ nanofibers. Electrochemical properties of $Li[Fe_{0.9}Mn_{0.1}]PO_4$ were investigated with charge/discharge measurements, electrochemical impedance spectroscopy measurements(EIS).