• Title/Summary/Keyword: nanomesh structure

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Effect of Nanomesh Structure Variation on the Friction and Wear Characteristics of Carbon Nanotube Coatings (탄소나노튜브 코팅의 마찰/마모 특성에 대한 나노메쉬 구조의 영향)

  • Kim, Hae-Jin;Kim, Chang-Lae
    • Tribology and Lubricants
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    • v.36 no.6
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    • pp.315-319
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    • 2020
  • In various fields, several studies based on carbon nanotubes (CNTs) have been conducted. The results of previous studies, wherein CNT coatings have been incorporated as solid lubricants, demonstrate that the friction and wear characteristics of CNT coatings can be improved through the absorption/dispersion of the contact pressure by controlling the stiffness of the nanomesh structure comprising CNT strands. In this study, the friction and wear characteristics of the following are compared: CNT coating formed by spin coating of CNT solution, compressed CNT coating, and compressed/heated CNT coating (wherein CNT strands are squeezed through compression and/or heating). It is observed that the friction coefficient of the CNT coating having the largest number of voids between the CNT strands is significantly lower than those of the compressed CNT coating and the compressed/heated CNT coating. The wear tracks of the compressed CNT coating and the compressed/heated CNT coating indicate that some parts become torn or adhere into a lump. However, in the case of the CNT coating, a smooth wear surface is formed by rubbing. Furthermore, as the void space between the squeezed and adhered CNT strands decreases, the resistance to structural deformation increases, thereby resulting in an increased frictional force and a wear pattern that becomes torn or forms a lump. Hence, the results obtained from this study corroborate that the friction and wear characteristics of CNT coatings can be enhanced through the absorption/dispersion of the contact pressure by controlling the stiffness of the nanomesh structure of CNT coatings.

Fabrication of Photo Sensitive Graphene Transistor Using Quantum Dot Coated Nano-Porous Graphene

  • ;Lee, Jae-Hyeon;Choe, Sun-Hyeong;Im, Se-Yun;Lee, Jong-Un;Bae, Yun-Gyeong;Hwang, Jong-Seung;Hwang, Seong-U;Hwang, Dong-Mok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.658-658
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    • 2013
  • Graphene is an attractive material for various device applications due to great electrical properties and chemical properties. However, lack of band gap is significant hurdle of graphene for future electrical device applications. In the past few years, several methods have been attempted to open and tune a band gap of graphene. For example, researchers try to fabricate graphene nanoribbon (GNR) using various templates or unzip the carbon nanotubes itself. However, these methods generate small driving currents or transconductances because of the large amount of scattering source at edge of GNRs. At 2009, Bai et al. introduced graphene nanomesh (GNM) structures which can open the band gap of large area graphene at room temperature with high current. However, this method is complex and only small area is possible. For practical applications, it needs more simple and large scale process. Herein, we introduce a photosensitive graphene device fabrication using CdSe QD coated nano-porous graphene (NPG). In our experiment, NPG was fabricated by thin film anodic aluminum oxide (AAO) film as an etching mask. First of all, we transfer the AAO on the graphene. And then, we etch the graphene using O2 reactive ion etching (RIE). Finally, we fabricate graphene device thorough photolithography process. We can control the length of NPG neckwidth from AAO pore widening time and RIE etching time. And we can increase size of NPG as large as 2 $cm^2$. Thin CdSe QD layer was deposited by spin coatingprocess. We carried out NPG structure by using field emission scanning electron microscopy (FE-SEM). And device measurements were done by Keithley 4200 SCS with 532 nm laser beam (5 mW) irradiation.

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