• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 춘계학술대회
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• pp.1025-1029
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• 2003

We studied the cross-sectional profiles of deformed thermoplastics in hot embossing process and compared with melt flow index for various embossing conditions such as embossing temperature, embossing pressure and initial thickness of the thermoplastics. The fastest embossing times for complete penetration of the cavities were obtained at temperature greater than $60^{\circ}C$ above glass transition temperature (Tg). When the melt flow index of polymer is low, the penetration ratio does not become large even if the embossing pressure increases. The complete occupation of the cavities was easier obtained with high melt flow index polymer than low melt flow index polymer at the same process condition. We believe these results can be very useful for optimizing nanostructured hot embossing also known nanoimprinting process conditions.

• 한국재료학회지
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• 제15권9호
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• pp.589-593
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• 2005

Nanoimprinting lithography (NIL) is known as a suitable technique for fabricating nano and micro structures of high definition. Hot embossing is one of NIL techniques and can imprint on thin films and bulk polymers. Key issues of hot embossing are time and expense needed to produce a stamp withstanding a high temperature and pressure. Fabrication of a metal stamp such as an electroplated nickel is cost intensive and time consuming. A ceramic stamp made by silicon is easy to break when the pressure is applied. In this paper, a plastic stamp using a high temperature epoxy was fabricated and tested. The plastic stamp was relatively inexpensive, rapid to produce and durable enough to withstanding multiple hot embossing cycles. The merits of low viscosity epoxy solutions were a fast degassing and a rapid filling the microstructures. The hot embossing process with plastic stamp was performed on PMMA substrates. The hot embossing was conducted at 12.6 bar, $120^{\circ}C$ and 10 minutes. An imprinted PMMA wafer was almost same value of the plastic stamp after 10 times embossing. Entire fabrication process from silicon master to plastic stamp was completed within 12 hours.

• 한국재료학회지
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• 제15권3호
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• pp.149-154
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• 2005

Teflon like fluorocarbon thin films have been deposited on silicon and oxide molds as an antistiction layer for the hot embossing process by an inductively coupled plasma (ICP) chemical vapor deposition (CVD) method. The process was performed at $C_4F_8$ gas flow rate of 2 sccm and 30 W of plasma power as a function of substrate temperature. The thickness of film was measured by a spectroscopic ellipsometry. These films were left in a vacuum oven of 100, 200 and $300^{\circ}C$ for a week. The change of film thickness, contact angle and adhesion and friction force was measured before and after the thermal test. No degradation of film was observed when films were treated at $100^{\circ}C$. The heat treatment of films at 200 and $300^{\circ}C$ caused the reduction of contact angles and film thickness in both silicon and oxide samples. Higher adhesion and friction forces of films were also measured on films treated at higher temperatures than $100^{\circ}C$. No differences on film properties were found when films were deposited on either silicon or oxide. A 100 nm silicon template with 1 to $500\;{\mu}m$ patterns was used for the hot embossing process on $4.5\;{\mu}m$ thick PMMA spun coated silicon wafers. The antistiction layer of 10 nm was deposited on the silicon mold. No stiction or damages were found on PMMA surfaces even after 30 times of hot embossing at $200^{\circ}C$ and 10 kN.