• Journal of Magnetics
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• v.10 no.2
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• pp.48-51
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• 2005

The spin transfer induced magnetization switching has been reported to occur in magnetic multilayer structures whose scope usually consists of one stack of ferromagnetic / non-ferromagnetic / ferromagnetic (F / N / F) materials. In this work, it is shown that: 1) Copper used as a buffer layer between the free Co and the Au cap-layer can clearly increase the probability to get the spin transfer induced magnetization switching in a simple spin valve Co 11 / Cu 6/ Co 2 (nm); 2) Furthermore, when Ruthenium is simultaneously applied as a buffer layer on the Si-substrate, the critical switching currents can be reduced by $30\%$, and the absolute resistance change delta R $[{\Delta}R]$ of that stack can be enlarged by $35\%$. The enhancement of the spin transfer induced magnetization switching can be ascribed to a lower local stress in the thin Co layer caused by a better lattice match between Co and Cu and the smoothening effect of Ru on the thick Co layer.

• Journal of Magnetics
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• v.11 no.1
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• pp.5-7
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• 2006

The magnetotransport properties at room temperature of the 250-nm-thick MnAs(-1100) film grown on GaAs(001) substrate by molecular beam epitaxy was investigated. The results measured with various magnetic field directions were reported. They show the negative magnetoresistive effect for all field directions. The difference in the magnetoresistance curves for different field directions is in agreement with the magnetic anisotropy of the film.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.356-358
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• 2004

In this paper we fabricated and succeeded to demonstrate a test panel for AMOLED on 2" glass and PET substrate. The test panel consisted of an array of 64 x 64 pixels in which OLEDs was driven by pentacene TFT. OTFTs were made of the inverted staggered structure and employed polyvinylphenol as the gate insulator and pentacene thin film as the active layer, producing the filed effect mobility of 0.3$cm^2$/V.sec and on/off current ratio of $10^5$. OLEDs were composed of TPD for HTL and Alq3 for EML with 35nm thick each, generating green monochrome light.

• Journal of Magnetics
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• v.19 no.3
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• pp.232-236
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• 2014

Anisotropy coupling in thin films with mixed induced and shape anisotropies is investigated. A 200-nm-thick Co-Fe-Pd-B thin film with a large induced anisotropy of 57 Oe is fabricated and then patterned into micron-sized cells to provide shape anisotropy, whose strength has a similar magnitude to that of the induced anisotropy for enhancing the anisotropy coupling. The angles between the two mixed anisotropies considered are $0^{\circ}$, $90^{\circ}$, and $110^{\circ}$. Hysteresis loops measured under in-plane magnetic fields along various directions indicate no anisotropy coupling behaviour for all the three angles examined in this study.

• Carbon letters
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• v.7 no.4
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• pp.245-248
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• 2006

Thin films of carbon-nano materials (CNMs) of different morphology have been successfully deposited on ceramic substrate by CVD at temperatures $800^{\circ}C$, $850^{\circ}C$ and $900^{\circ}C$ using plant based oils in the presence of transition metal catalysts (Ni, Co and Ni/Co alloys). Based on the return and insertion loss, microwave absorption properties of thin film of nanocarbon material are measured using passive micro-Strip line components. The result indicates that amongst CNMs synthesized from oil of natural precursors (mustered oil - Brassica napus, Karanja oil - Pongamia glabra, Cotton oil - Gossipium hirsuta and Neem oil - Azadirachta indica) carbon nano fibers obtained from neem's seed oil showed better microwave absorption (~20dB) in the range of 8.0 GHz to 17.90 GHz.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.372-373
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• 2006

Modern business trends call for miniaturization of electronic systems. One of the major impedances in this miniaturization is the conductive and inductive components in chips and circuit boards. Direct Write Technology can write these soft magnetic materials, thus allowing for further miniaturization of inductor devices. Another obstacle in electronics fabrication is the size limitations of thick screen-printing and the material limitations in ink jet printing. Direct Write Technologies address both of these limitations by providing feature sizes less than 20 microns with a wide range of materials possibilities. A discussion of the application of these nano-particulate materials by Direct Write Technologies will be presented.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.10a
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• pp.167-170
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• 2005

The two-dimensional (2D) and three-dimensional (3D) diamond-like carbon (DLC) stamps for ultraviolet nanoimprint lithography (UV-NIL) were fabricated using two kinds of methods, which were a DLC coating process followed by the focused ion beam (FIB) lithography and the two-photon polymerization (TPP) patterning followed by nano-scale thick DLC coating. We fabricated 70 nm deep lines with a width of 100 nm and 70 nm deep lines with a width of 150 nm on 100 nm thick DLC layers coated on quartz substrates using the FIB lithography. 200 nm wide lines, 3D rings with a diameter of $1.35\;{\mu}m$ and a height of $1.97\;{\mu}m$, and a 3D cone with a bottom diameter of $2.88\;{\mu}m$ and a height of $1.97\;{\mu}m$ were successfully fabricated using the TPP patterning and DLC coating process. The wafers were successfully printed on an UV-NIL using the DLC stamp. We could see the excellent correlation between the dimensions of features of stamp and the corresponding imprinted features.

• Korean Journal of Materials Research
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• v.17 no.4
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• pp.207-214
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• 2007

We fabricated thermally-evaporated 10 -Ni/(poly)Si and 10 -Ni/1 -Ir/(poly)Si structures to investigate the microstructure of nickel monosilicide at the elevated temperatures required for annealing. Silicides underwent rapid at the temperatures of 300-1200 for 40 seconds. Silicides suitable for the salicide process formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester was used to investigate the sheet resistances. A transmission electron microscope(TEM) and an Auger depth profile scope were employed for the determination of vertical section structure and thickness. Nickel silicides with iridium on single crystal silicon actives and polycrystalline silicon gates shoed low resistance up to 1000 and 800, respectively, while the conventional nickle monosilicide showed low resistance below 700. Through TEM analysis, we confirmed that a uniform, 20 -thick silicide layer formed on the single-crystal silicon substrate for the Ir-inserted case while a non-uniform, agglomerated layer was observed for the conventional nickel silicide. On the polycrystalline silicon substrate, we confirmed that the conventional nickel silicide showed a unique silicon-silicide mixing at the high silicidation temperature of 1000. Auger depth profile analysis also supports the presence of thismixed microstructure. Our result implies that our newly proposed iridium-added NiSi process may widen the thermal process window for the salicide process and be suitable for nano-thick silicides.

• Transactions of the Korean hydrogen and new energy society
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• v.21 no.5
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• pp.375-382
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• 2010

A layered perovskite photocatalysts, $SrBi_2Nb_2O_9$ (SBN), was synthesized by the conventional solid-state reaction method and characterized by X-ray diffraction (XRD) and UV-visble spectrophotometry. The results showed that the structure of $SrBi_2Nb_2O_9$ is orthorhombic. Diffuse reflectance spectra for calcined and attrition-milled SBN showed the main absorption edges were less 400 nm, that is ultraviolet region. SBN under micron-sized powder was deposited on the $Al_2O_3$ by room temperature powder spray in vacuum process, so called aerosol deposition (AD), and nano-grained $SrBi_2Nb_2O_9$ photocatalytic thick film was fabricated. AD-deposited SBN thick films were characterized by XRD, scanning electron microscopy (SEM) and UV-visable spectrophotometry, Moreover, it was found that several nano-sized SBN film by AD process can improve the photocatalytic activity under visable reflectance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.308-317
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• 2007

We fabricated thermally-evaporated 10 nm-Ni/(poly)Si and 10 nm-$Ni_{0.5}Co_{0.5}$/(Poly)Si structures to investigate the microstructure of nickel silicides at the elevated temperatures required lot annealing. Silicides underwent rapid annealing at the temperatures of $600{\sim}1100^{\circ}C$ for 40 seconds. Silicides suitable for the salicide process formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester was used to investigate the sheet resistances. A transmission electron microscope and an Auger depth profilescope were employed for the determination of vortical microstructure and thickness. Nickel silicides with cobalt on single crystal silicon actives and polycrystalline silicon gates showed low resistance up to $1100^{\circ}C$ and $900^{\circ}C$, respectively, while the conventional nickle monosilicide showed low resistance below $700^{\circ}C$. Through TEM analysis, we confirmed that a uniform, $10{\sim}15 nm$-thick silicide layer formed on the single-crystal silicon substrate for the Co-alloyed case while a non-uniform, agglomerated layer was observed for the conventional nickel silicide. On the polycrystalline silicon substrate, we confirmed that the conventional nickel silicide showed a unique silicon-silicide mixing at the high silicidation temperature of $1000^{\circ}C$. Auger depth profile analysis also supports the presence of this mixed microstructure. Our result implies that our newly proposed NiCo-alloy composite silicide process may widen the thermal process window for the salicide process and be suitable for nano-thick silicides.