• Title/Summary/Keyword: nano-thick

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Gas Sensing Characteristics of Nano Sized SnO2 Sensors for Various Co and Ni Concentration (Co, Ni 농도 변화에 따른 나노 SnO2 센서의 감응 특성)

  • Lee, Ji-Young;Yu, Yoon-Sic;Yu, Il
    • Korean Journal of Materials Research
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    • v.21 no.10
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    • pp.546-549
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    • 2011
  • Nano-sized $SnO_2$ thick films were prepared by a screen-printing method onto $Al_2O_3$ substrates. The sensing characteristics were investigated by measuring the electrical resistance of each sensor in a test box as a function of the detection gas. The nano-sized $SnO_2$ thick film sensors were treated in a $N_2$ atmosphere. The structural properties of the nano $SnO_2$with a rutile structure according to XRD showed a (110) dominant $SnO_2$ peak. The particle size of $SnO_2$:Ni nano powders at Ni 8 wt% was about 45 nm, and the $SnO_2$ particles were found to contain many pores according to the SEM analysis. The sensitivity of the nano $SnO_2$-based sensors was measured for 5 ppm $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature by comparing the resistance in air with that in the target gases. The results showed that the best sensitivity of $SnO_2$:Ni and $SnO_2$:Co sensors for $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature was observed in $SnO_2$:Ni sensors doped with 8 wt% Ni. The response time of the $SnO_2$:Ni gas sensors was 10 seconds and recovery time was 15 seconds for the $CH_4$ and $CH_3CH_2CH_3$ gases.

Characterization of Hot Carrier Mechanism of Nano-Scale CMOSFETs (나노급 소자의 핫캐리어 특성 분석)

  • Na Jun-Hee;Choi Seo-Yun;Kim Yong-Goo;Lee Hi-Deok
    • Proceedings of the IEEK Conference
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    • 2004.06b
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    • pp.327-330
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    • 2004
  • It is shown that the hot carrier degradation due to enhanced hot holes trapping dominates PMOSFETs lifetime both in thin and thick devices. Moreover, it is found that in 0.13 ${\mu}m$ CMOSFET the PMOS lifetime under CHC (Channel Hot Carrier) stress is lower than the NMOSFET lifetime under DAHC (Drain Avalanche Hot Carrier) stress. Therefore. the interface trap generation due to enhanced hot hole injection will become a dominant degradation factor. In case of thick MOSFET, the degradation by hot carrier is confirmed using charge pumping current method and highly necessary to enhance overall device lifetime or circuit lifetime in upcoming nano-scale CMOS technology.

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Two New Sponges of the Genus Halichondria(Halichondrida: Halichondriidae) from Korea

  • Kang, Dong-Won;Sim, Chung-Ja
    • Animal cells and systems
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    • v.12 no.1
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    • pp.65-68
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    • 2008
  • Two new marine sponges in the family Halichondriidae, Halichondria gageoenesis n. sp. and Halichondria muanensis n. sp. are collected from Gageodo Island and Yongjeong-ri, Hyeongyeong-myeon, Muan-gun, Korea during 2006-2007. H. gageoenesis n. sp. is similar to H. oshoro(Tanita, 1961) in type of spicule, but is different from the latter in growth form and size of spicule. The oxea of the new species is larger than H. oshoro's. The growth form of H. gageoenesis n. sp. is thick and consists of encrusting with numerous erect hollow cylindrical tubes, but H. oshoro is of massive form. H. muanensis n. sp is similar to H. retiderma(Dendy, 1921) in type of spicule and choanosomal skeleton, but it is different from the latter in growth form and size of spicule. The oxea is smaller than that of H. retiderma. The growth form is thick and consists of encrusting, with numerous erect hollow cylindrical tubes, compared with the massive lobose of H. retiderma.

Electric Circuit Fabrication Technology using Conductive Ink and Direct Printing

  • Jeong, Jae-U;Kim, Yong-Sik;Yun, Gwan-Su
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.12.1-12.1
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    • 2009
  • For the micro conductive line, memory device fabrication process use many expensive processes such as manufactur-ing of photo mask, coating of photo resist, exposure, development, and etching. However, direct printing technology has the merits about simple and cost effective processes because nano-metal particles contained inks are directly injective without mask. And also, this technology has the advantage about fabrication of fine pattern line on various substrates such as FPCB, PCB, glass, polymer and so on. In this work, we have fabricated the fine and thick metal pattern line on flexible PCB substrate for the next generation electronic circuit using Ag nano-particles contained ink. To improve the line tolerance on flexible PCB, metal lines are fabricated by sequential prinitng method. Sequential printing method has vari-ous merits about fine, thick and high resolution pattern lines without bulge.

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Investigation on micro/nano filling behavior in LGP injection molding (LGP 사출성형 시의 미세충전 특성해석)

  • Cho, K.C.;Shin, H.G.;Kim, H.Y.;Kim, B.H.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2006.05a
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    • pp.91-94
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    • 2006
  • In this paper, in order to get micro or nano size optical patterns, an analytical and experimental investigation on a LGP (light guide plate) injection molding process has performed. The LGP, which diffusing and emitting the light from the CCFL or the LEDs to the panel front direction uniformly, typically has an under 1mm thick base substrate and numerous 60 to $170{\mu}m$ width and 6 to $10{\mu}m$ thick dot patterns on it. Generally, the small size LGPs, for mobile devices, have been and are being made of PMMA through the injection molding process. However, the substrate thickness and the dot pattern size are decreasing, it becomes hard to fill the micro to sub-micro cavities completely. To investigate the flow behavior of resin in micro/nano cavities and identify the characteristics of the LGP injection molding process, we carried out the flow analyses with respect to the variations of the substrate thickness, the dot pattern size and the pitch of a cavity.

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A study on mechanical characterization of nano-thick films fabricated by transfer assembly technique (이송조립기술로 제조된 나노 박막의 기계적인 특성 평가에 관한 연구)

  • Choi, Hyun-Ju;Kim, Jae-Hyun;Lee, Sang-Joo;Lee, Hak-Joo
    • Proceedings of the KSME Conference
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    • 2008.11a
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    • pp.30-34
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    • 2008
  • The transfer assembly (or transfer printing) technique is a promising method for fabricating multi-scale structures on various substrates including semiconductors and polymers, and has been applied to fabrication of flexible devices with superior performance to conventional organic flexible devices. The mechanical behaviors of the structures fabricated by the transfer assembly is a very important information for design and reliability evaluation purpose, but the measurement of the behaviors is difficult since their critical-dimensions are very tiny. In this study, Au films with nano-scale thickness were fabricated on a silicon substrate and their mechanical properties were measured using micro-tensile test. The Au films on the silicon substrate were then transferred to a PDMS substrate using the transfer assembly technique. Self-assembled monolayer (SAM) with a thiol group was used to enhance the transfer of Au films, and the mechanical behaviors were characterized using wrinkle-based test. The test results from micro-tensile and wrinkle-based test are compared to each other, and their implication to the transfer assembly technique is discussed.

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Electron beam lithography patterning research for stamper fabrication using nano-injection molding (나노사출성형용 스탬퍼 제작을 위한 Electron beam lithography 패터닝 연구)

  • Uhm S.J.;Seo Y.H.;Yoo Y.E.;Choi D.S.;Je T.J.;Whang K.H.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.10a
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    • pp.698-701
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    • 2005
  • We have investigated experimentally a nano patterning using electron beam lithography for the nickel stamper fabrication. Recently, DVD and Blu-ray disk(BD) have nano-scale patterns in order to increase the storage density. Specially, BD has 100nm-scale patterns which are generally fabricated by electron beam lithography. In this paper, we found optimum condition of electron-beam lithography for 100nm-scale patterning. We controlled various conditions of EHP(acceleration voltage), beam current, dose and aperture size in order to obtain optimum conditions. We used 100nm-thick PMMA layer on a silicon wafer as photoresist. We found that EHP was the most dominant factor in electron-beam lithography.

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Direct Deposition of high quality nanocrystalline Silicon Films by Catalytic CVD at Low Temperatures (<200 K)

  • Kim, Tae-Hwan;Lee, Kyoung-Min;Hwang, Jae-Dam;Hong, Wan-Shick
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.261-263
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    • 2008
  • We attempted modulation of the hydrogen dilution ratio in a Cat-CVD system to achieve both the minimal incubation layer and the high throughput. We obtained the incubation layer thickness of 3 nm, and were able to grow a 200 nm-thick film having a 70 % crystallinity in 18 minutes.

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A study on high aspect ratio of plastic nano hair molding (고세장비 플라스틱 나노헤어 성형에 관한 연구)

  • Kim T.H.;Yoo Y.E.;Seo Y.H.;Lee H.J.;Park Y.W.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2006.05a
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    • pp.471-472
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    • 2006
  • High aspect ratio of nano hairs on a plastic substrate is molded using thermoplstic materials including COC, PP, PC and PMMA. As a template for molding nano hairs, AAO membrane is adopted, which is 60um thick and 13mm in diameter. This membrane has about 109 of through-holes of which diameter is around 200nm. This AAO membrane and the pellet of materials are stacked in the mold and pressed to mold after heating up to be melted. The AAO membrane is removed using KOH to obtain the molded nano hairs. As a result, the diameter of the molded hairs is around 200nm and the length is $2um{\sim}60um$ depending on the molding conditions and materials.

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