• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.15.1-15.1
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• 2009

Nano transfer printing and micro contact printing is well known printing method based on soft lithography which uses conformal soft elastomer with designed surface relief structures. Here I introduce another class of novel 3D nanofabrication technique by using the same elastomer but in a different manner. The approach, which we refer to as proximity field nanopatterning, uses the surface-reliefed elastomers as phase masks to pattern thick layers of transparent, photosensitive materials. Aspects of the optics, the materials, and the physical chemistry associated with this method are outlined. A range of 3D structures illustrate its capabilities, and several application examples demonstrate possible areas of use in technologies ranging from microfluidics to photonic materials to density gradient structures for chemical release and high-energy density science.

• Journal of the Optical Society of Korea
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• v.6 no.3
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• pp.83-86
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• 2002

Nanoscopic emission from periodic nano-hole arrays in thick metal films is studied experimentally. The experiments give direct evidence for SP excitations in such structures. We show that the symmetry of the emission is governed by polarization and its shape is defined the interference of SP waves of different diffraction orders. Near-Held pattern analysis combined with the far-Held reflection and transmission measurements suggests that the SP eigenmodes of these arrays may be understood as those of ionic plasmon molecules.

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.59-66
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• 1996

Polyimides containing cyclobutane ring in main chain is known to be thermally stable and able to be developed in organic solvents after photolysis with 254 nm UV light. This type of polyimides can be used as promising positive photoresist in VLSI fabrication process. In the current VLSI process, photoresist films are formed by spin coating. The film thickness is more than several hundred nano meters. It seems that there is room for improvement of film coating process by introducing Langmuir Blodgett technique. Thereby ultra thin film photoresist can be formed, and higher density of integration in VLSI be achieved. In the present work, depositing procedure of LB films of this polyimide was investigated. LB film thickness was measured by ellipsometry to evaluate deposited film status. Chemical imidization procedure was studied to avoid several problems in thermal imidization. The pattern of submicron dimension has successfully formed on LB film of 8nm thick, which found showing good contrast.

• Journal of Sensor Science and Technology
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• v.29 no.6
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• pp.399-406
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• 2020

Pd nanogap hydrogen sensors were developed using an elastomeric substrate and operated through an on-off mechanism. A 10 nm thick Pd thin film was formed on a polydimethylsiloxane (PDMS) substrate, and 50% of the physical strain was applied in the longitudinal direction to fabricated uniform nanogaps. The initial concentration of the hydrogen gas for the PDMS/Pd films was controlled, and subsequently, the on-off switching response was measured. We found that the average nanogap was less than 50 nm, and the Pd nanogap hydrogen sensors operated over a wide range of temperatures. In particular, the sensors work properly even at a very low temperature of -40℃ with a fast response time of 2 s. In addition, we have investigated the relative humidity and annealing effects.

• Advances in aircraft and spacecraft science
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• v.6 no.4
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• pp.273-282
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• 2019

This article is concerned with the investigation of geometrically non-linear vibration response of refined thick porous nanobeams. To this end, non-local theory of elasticity has been adopted to provide the nanobeam formulation. Voids or pores can affect the material characteristics of the nanobeam. So, their effects have been considered in this research and also there are various void distributions. The closed form solution of the non-linear problem has been used that is adopted from previous articles. Then, it is focused on the impacts of non-local field, void distribution, void amount and geometrical properties on non-linear vibrational characteristic of a nano-size beam.

• Archives of Metallurgy and Materials
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• v.66 no.3
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• pp.675-678
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• 2021

In order to the long-term stability of DSE for electroplating process, the lifetime equations were calculated from the results of the accelerated life testing, and the lifetime of DSE was predicted. The nano-embossing pre-treatment led to 2.65 times in the lifetime of DSE. The degradation mechanism of DSE with a thick metal oxide layer for applied highly current density process condition was identified. The improvement of durability of DSE seems to be closely related to adhesion between titanium plate and mixed metal oxide layer.

• Korean Journal of Metals and Materials
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• v.47 no.5
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• pp.322-329
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• 2009

60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.50-56
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• 2011

In this study, the effects of ZnO buffer layer thickness and annealing temperature on the heterojunction diode, ZnO/b-ZnO/p-Si(111), were reported. The effects of those on the structural and electrical properties of zinc oxide (ZnO) films on ZnO buffered p-Si (111) substrate were also studied. Structural properties of ZnO thin films were studied by X-ray diffraction and I-V characteristics were measured by a semiconductor parameter analyzer. ZnO thin films with 70 nm thick buffer layer and annealing temperature of $700^{\circ}C$ showed the best c-axis preferred orientation. The best electrical property was found at the condition of buffer layer annealing temperature of $700^{\circ}C$ and 50nm thick ZnO buffer layer (resistivity: $2.58{\times}10^{-4}[{\Omega}-cm]$, carrier concentration: $1.16{\times}1020[cm^{-3}]$). The I-V characteristics for ZnO/b-ZnO/p-Si(111) heterojunction diode were improved with increasing buffer layer thickness at buffer layer annealing temperature of $700^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.2 s.43
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• pp.59-63
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• 2007

This paper presented a low-cost thick film gas sensor module, which was based on simple PCB (Printed Circuit Board) process. The proposed sensor module included a $NO_2/H_2$ gas sensor, a relative humidity sensor, and a heating element. The $NO_2/H_2$ gas and relative humidity sensors were realized by screen-printing $SnO_2,\;BaTiO_3$ nano-powders on IDTS (Interdigital Transducer) of a PCB substrate, respectively. At first 1% $H_2$ gas flowed into the sensor chamber. After 4 min, air filled the chamber while $H_2$ gas flow stopped. This experiment was performed repeatedly. The Identical procedure was used for the $NO_2$ detection. The result for sensing $H_2$ gas showed the increase of voltage from 0.8V to 3.5V due to the conductance increase and its reaction response time by hydrogen flow was 65 sec. $NO_2$ sensing results showed 2.7 V voltage drop due to the conductance decrease and its response time was 3 sec through a voltage monitoring.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.149-154
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• 2018

This paper describes the fabrication and heat transfer property of 50 watts rated LED array module where multiple chips are mounted on chip-on-board type ceramic-metal hybrid substrate with high heat dissipation property for high power street and anti-explosive lighting system. The high heat transfer ceramic-metal hybrid substrate was fabricated by conformal coating of thick film glass-ceramic and silver pastes to form insulation and conductor layers, using thick film screen printing method on top of the high thermal conductivity aluminum alloy heat-spreading panel, then co-fired at $515^{\circ}C$. A comparative LED array module with the same configuration using epoxy resin based FR-4 PCB with thermalvia type was also fabricated, then the thermal properties were measured with multichannel temperature sensors and thermal resistance measuring system. As a result, the thermal resistance of the ceramic-metal hybrid substrate in the $4{\times}9$ type LEDs array module exhibited about one third to the value as that of FR-4 substrate, implying that at least triple performance of heat transfer property as that of FR-4 substrate was realized.