• 한국인공지능학회지
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• 제11권4호
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• pp.1-8
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• 2023

In this paper, we propose a black ice detection platform framework using Convolutional Neural Networks (CNNs). To overcome black ice problem, we introduce a real-time based early warning platform using CNN-based architecture, and furthermore, in order to enhance the accuracy of black ice detection, we apply a multi-scale dilation convolution feature fusion (MsDC-FF) technique. Then, we establish a specialized experimental platform by using a comprehensive dataset of thermal road black ice images for a training and evaluation purpose. Experimental results of a real-time black ice detection platform show the better performance of our proposed network model compared to conventional image segmentation models. Our proposed platform have achieved real-time segmentation of road black ice areas by deploying a road black ice area segmentation network on the edge device Jetson Nano devices. This approach in parallel using multi-scale dilated convolutions with different dilation rates had faster segmentation speeds due to its smaller model parameters. The proposed MsCD-FF Net(2) model had the fastest segmentation speed at 5.53 frame per second (FPS). Thereby encouraging safe driving for motorists and providing decision support for road surface management in the road traffic monitoring department.

• 한국진공학회지
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• 제18권5호
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• pp.346-351
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• 2009

선폭의 감소와 소자 집적도의 증가로 인하여 향후 현재 사용되고 있는 탑-다운(Top-down) 생산방식에서 바텀-업(Bottomup) 방식의 소자 생산이 예상되고 있으며, 이와 관련된 연구가 활발히 진행 중에 있다. 대표적으로 나노와이어(Nanowire)와 나노벨트(Nanobelt)를 이용한 소자 개발이 한 대안이며, 이러한 소자 개발을 위해 물질의 물성 특성 연구를 위하여 나노인덴터를 이용한 물성 연구가 진행 중이다. 특히 나노인덴터는 나노 크기의 구조물에 대한 연구를 위하여 부가적으로 원자힘현미경(AFM; atomic force microscope) 기능을 제공하며, 이를 통하여 얻어진 표면 이미지를 이용하여 나노 구조물의 정확한 위치에 대한 물성 정보를 제공하게 된다. 그러나 나노인덴터에서 사용되는 팁(tip)은 기존의 원자현미경에서 사용되는 팁에 비하여 상대적 크기가 상당히 큰 특징이 있어 나노인덴터에 의한 표면 이미지에는 상당한 오차가 발생하게 된다. 따라서 본 연구에서는 나노인덴터에서 대표적으로 사용되는 50nm 벌코비치 팁(Berkovich tip)과 1um $90^{\circ}$ 원뿔형 팁(Conical tip)을 이용하였으며, 각 팁에 대한 표면 특성을 확인하기 위하여 박막 표면을 각 팁으로 압입하여 압입 후 표면 영상과 압입 깊이를 통하여 팁의 특성을 확인하였다. 이후 나노인덴터를 이용하여 100nm급 나노 구조물에서 표면 주사를 실시하여 획득된 이미지와 기존 원자현미경을 이용한 표면 이미지를 비교하여 오차를 획득하였다. 또한 각 팁의 외형으로 이론적으로 계산된 오차와 비교하였다.

• 한국정밀공학회지
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• 제29권2호
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• pp.139-146
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• 2012

A multi-tasking machine tool for large scale marine engine crankshafts has been developed together with design technologies for its special devices. Since work pieces, that is, crankshafts to be machined are big and heavy; weight of over 100 tons, length of 10 m long, and diameter of over 3.5 m, several special purpose core devices are necessarily developed such as PTD (Pin Turning Device) for machining eccentric pin parts, face place and steady rest for chucking and resting heavy work pieces. PTD is a unique special purpose device of open-and-close ring typed structure equipped with revolving ring spindle for machining eccentric pins apart from journal. In order to achieve high rigidity of the machine tool, structural design optimization using TMSA (Taguch Method based Sequential Algorithm) has been completed with FEM structural analysis, and a hydrostatic bearing system for the PTD has been developed with theoretical hydrostatic analysis.

• Applied Microscopy
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• 제36권spc1호
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• pp.35-40
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• 2006

Self-assembled InAs/GaAs quantum dots (QDs) were grown by the atomic layer epitaxy (ALE) and molecular beam epitaxy (MBE) techniques, The structure and the thermal stability of QDs have been studied by high resolution electron microscopy with in-situ heating experiment capability, The ALE and MBE QDs were found to form a hemispherical structure with side facets in the early stage of growth, Upon capping by GaAs layer, however, the apex of QDs changed to a flat one. The ALE QDs have larger size and more regular shape than those of MBE QDs. The QDs collapse due to elevated temperature was observed directly in atomic scale, In situ heating experiment within TEM revealed that the uncapped QDs remained stable up to $580^{\circ}C$, However, at temperature above $600^{\circ}C$, the QDs collapsed due to the diffusion and evaporation of In and As from the QDs, The density of the QDs decreased abruptly by this collapse and most of them disappeared at above $600^{\circ}C$.

• 한국섬유공학회:학술대회논문집
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• 한국섬유공학회 2003년도 The Korea-Japan Joint Symposium
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• pp.45-46
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• 2003

A process control system has been developed for measurement and characterization of the nanofiber web qualities. The nano-fiber information system (NAFIS) developed consists of a measurement device and an analysis algorithm, which are a microscope-laser sensor fusion system and a process information system, respectively. It has been found that NAFIS is so successful in detecting irregularities of pore and diameter that the resulting product has been quitely under control even at the high production rate. Pore distribution, fiber diameter and mass uniformity have been readily measured and analyzed by integrating the non-contact measurement technology and the random function-based time domain signal/image processing algorithm. Qualifies of the nano-fiber webs have been revealed in a way that the statistical parameters for the characteristics above are calculated and stored in a certain interval along with the time-specific information. Quality matrix, scale of homogeneity is easily obtained through the easy-to-use GUI information. Finally, ANFIS has been evaluated both for the real-time measurement and analysis, and for the process monitoring.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.351-351
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• 2011

Graphene has drawn great interests because of its distinctive band structure and physical properties[1]. A few of the practical applications envisioned for graphene include semiconductor applications, optoelectronics (sola cell, touch screens, liquid crystal displays), and graphene based batteries/super-capacitors [2-3]. Recent work has shown that excellent electronic properties are exhibited by large-scale ultrathin graphite films, grown by chemical vapor deposition on a polycrystalline metal and transferred to a device-compatible surface[4]. In this paper, we focussed our scope for the understanding the graphene growth at different conditions, which enables to control the growth towards the application aimed. The graphene was grown using chemical vapor deposition (CVD) with methane and hydrogen gas in vacuum furnace system. The grown graphene was characterized using a scanning electron microscope(SEM) and Raman spectroscopy. We changed the growth temperature from 900 to $1050^{\circ}C$ with various gas flow rate and composition rate. The growth condition for larger domain will be discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.307-309
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• 2009

We have fabricated vertical-type organic transistors (static induction transistors; SITs) with built-in nano-triode arrays formed in parallel by a colloidal-lithography technique. Using this technique, we could fabricate a microstructure in a lateral direction within a large-scale organic device without relying on photolithography. The organic transistor showed low operating voltages, high current output, and large transconductance.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.472-472
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• 2011

The capacitive coupled plasma (CCP) has been extensively used in the semiconductor industry because it has not only good uniformity, but also low electron temperature. But CCP source has some problems, such as difficulty in varying the ion bombardment energy separately, low plasma density, and high processing pressure, etc. In this reason, dual frequency CCP has been investigated with a separate substrate biasing to control the plasma parameters and to obtain high etch rate with high etch selectivity. Especially, in this study, we studied on the etching of $SiO_2$ by using the pulse-time modulation in the dual-frequency CCP source composed of 60 MHz/ 2 MHz rf power. By using the combination of high /low rf powers, the differences in the gas dissociation, plasma density, and etch characteristics were investigated. Also, as the size of the semiconductor device is decreased to nano-scale, the etching of contact hole which has nano-scale higher aspect ratio is required. For the nano-scale contact hole etching by using continuous plasma, several etch problems such as bowing, sidewall taper, twist, mask faceting, erosion, distortions etc. occurs. To resolve these problems, etching in low process pressure, more sidewall passivation by using fluorocarbon-based plasma with high carbon ratio, low temperature processing, charge effect breaking, power modulation are needed. Therefore, in this study, to resolve these problems, we used the pulse-time modulated dual-frequency CCP system. Pulse plasma is generated by periodical turning the RF power On and Off state. We measured the etch rate, etch selectivity and etch profile by using a step profilometer and SEM. Also the X-ray photoelectron spectroscopic analysis on the surfaces etched by different duty ratio conditions correlate with the results above.

• 대한전자공학회논문지SD
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• 제45권11호
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• pp.1-7
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• 2008

본 연구에서는 양자 현상을 고려한 나노미터 MuGFET의 C-V 특성을 분석하기 위하여 2차원 Poisson-$Schr{\ddot{o}}dinger$ 방정식을 self-consisnt하게 풀 수 있는 시뮬레이터를 구현하였다. 소자 시뮬레이터를 이용하여 양자 현상으로 인한 소자크기와 게이트 구조에 따른 게이트-채널 커패시턴스 특성을 분석하였다. 소자의 크기가 감소할수록 단위 면적당 게이트-채널 커패시턴스는 증가하였다. 그리고 게이트 구조가 다른 소자에서는 게이트-채널 커패시턴스가 유효게이트 수가 증가할수록 감소하였다. 이런 결과를 실리콘 표면의 전자농도 분포와 인버전 커패시턴스로 설명하였다 또한 인버전 커패시턴스로부터 소자의 크기 및 게이트 구조에 따른 inversion-layer centroid 길이도 계산하였다.

• Composites Research
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• 제23권3호
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• pp.13-18
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• 2010

나노 재료를 다룰 때 큰 문제 중의 하나는 반데르발스(van der Waals) 상호작용으로 응집되어 있는 나노 입자, 특히 CNT를 어떻게 효과적으로 분산시킬 수 있는가이다. 본 연구에서는 나노 입자를 효과적으로 분산시킬 수 있는 방법으로 코로나 방전(corona discharge) 현상과 정전식모(electrostatic flocking) 공정을 이용한 새로운 분산방법인 방전식모(dischare flocking) 장치를 고안하였으며 분산특성을 평가하기 위하여 방전식모 및 RFI 공정으로 복합재료 시편을 제작하여 전기적, 기계적 특성을 비교하였다. 더욱이, CNT와 에폭시의 기체 방전 효과를 평가하기 위하여 플라즈마 처리된 CNT를 사용하여 복합재료를 제작하였으며 전기적, 기계적 특성을 측정하였다. 방전식모 공정으로 제작 된 복합재료 시편의 특성은 RFI로 제작된 시편과 유사하였으며 방전식모 공정중의 기체방전 현상은 플라즈마 처리된 CNT에 영향을 주지 않았다.