• 한국산업융합학회 논문집
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• 제4권3호
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• pp.311-318
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• 2001

The application of a pulsed power system is being extended to a environmental and industrial fields. The non-dissolution waste water pollutants from industrial plants can be processed by applying high voltage pulses with a fast rising time (a few nanoseconds) and short duration (nano to microseconds) in a pulsed corona discharge reactor. The nano-pulse generator with a magnetic switch has been developed. Its corona current in load can be adjusted by pulse width and repetition rate. we investigated the performance of the nano-pulse generator using the dummy load which is composed of resistor and capacitor equivalent to the actual reactor. This paper descibes the electrical characteristics of the nano-pulse generator that produces a 300 ns pulse at maximum repetition rate of 400 pps with a voltage of 40 kV across a $640{\Omega}$ load. In this paper we briefly discuss a configuration of system and test results.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권2호
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• pp.72-78
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• 2001

A compact size high voltage pulse generator with nanosecond rise time has been designed and investigated experimentally. The inductance of a pulse generator can be reduced by fixing the Marx generator and pulse forming network components into a single cylindrical unit. As a result, nanosecond rise time about $8{\sim}10[ns]$ and pulse width of several hundred [ns] can be obtained from a modified Marx pulse generator. And parametric studies showed that the rise time of the output pulse was depended little on the change of the load resistance and the charging capacitance while, the pulse width of the output pulse was depended greatly upon the change of the load resistance and the charging capacitance. The theoretical showed the possibility to design the laboratory-size pulse generator very fast rising time and a proper pulse width by minimizing stray inductance and varying resistance and capacitance.

• 대한기계학회논문집A
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• 제34권11호
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• pp.1631-1636
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• 2010

본 연구는 AFM 을 이용하여 nano scale 의 Lithography 를 구현하는 것이다. 외부의 pulse generator 를 통하여 전류를 통전 시키는 방법을 수정함으로써, 일정 습도를 유지한 상태의 AFM 내부에서 Si-wafer 의 표면과 Tip의 사이에 전원을 인가하고 pulse generator 에서 임의로 pulse 폭의 변화를 준다. Si-wafer 표면에서 물 분자가 Tip과 wafer 사이의 직접적인 전류의 이동조절로 인해 전기 화학적 반응을 적절히 제한하여 산화물을 생성시키는 방법이다. 이렇게 생성된 산화물은 불산 처리를 통하여 산화물을 식각시켜 미세 그루브를 구현 할 수 있다. 본 연구를 통한 나노 패턴 생성 기법은 나노 머시닝 기술의 진보에 잠재적 가능성을 제시한다.

• 전기학회논문지
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• 제56권8호
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• pp.1445-1449
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• 2007

This paper presents the DOD (Drop-On-Demand) characteristic using the electrostatic field induced inkjet printing system. In order to achieve the DOD characteristic of electrostatic field induced inkjet printing, applied the bias voltage of 1.4 kV and the pulse voltage of $2.0\;kV\;{\sim}\;2.7\;kV$ using high voltage pulse generator. Electrostatic field induced droplet ejection is directly observed using a high-speed camera and for investigated DOD characteristic, CNT ink used. The electrostatic field induced inkjet head system has DOD characteristic using pulse generator which can be applied pulse voltage. The bias voltage has a good condition which form meniscus and has micro dripping mode for small size micro droplet. Also, the droplet size decreases with increasing the applied pulse voltage. This paper shows DOD characteristic at electrostatic field induced inkjet head system, Therefore. electrostatic DOD inkjet head system will be applied industrial area comparing conventional electrostatic inkjet head system.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2019년도 전력전자학술대회
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• pp.248-250
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• 2019

입자가속기는 물질의 미세 구조를 밝히기 위해 기본 입자를 가속, 충돌시키는 장치로 최근 암치료 등 의학적 용도로도 이용되고 있다. 그러나 고속으로 고압을 인가시켜야 하는 장치인 만큼 기존에 명확히 설립된 회로가 없다. 이에 본 논문에서는 Ion gate를 등가회로로 구성하여 Fast Switch 장치의 기본 회로를 제안 및 분석, 실험하였다. 또한 기본 회로에서 발생하는 문제들을 개선하고자 RC Input filter와 기타 파라미터들의 설계와 Fast switch와 Ion gate를 잇는 wire 내의 기생성분을 고찰하였고 Ion gate 구동을 위해 기준이 되는 명확한 Fast switch 회로를 제안한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.57-57
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• 2010

In this study, nano-sized phase change materials were evaluated using nanoimprint lithography and c-AFM technique. The 200nm in diameter phase change nano-pillar device of GeSbTe, AgInSbTe, InSe, GeTe, GeSb were successfully fabricated using nanoimprint lithography. And the electrical properties of the phase change nano-pillar device were evaluated using c-AFM with pulse generator and voltage source.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1574-1575
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• 2011

The application of a pulsed power system is being extended to an environmental and industrial field. The non-destructive gaseous pollutants from industrial plants such as power generation plants and incinerators can be processed by applying high voltage pulses with a fast rising time (a few nanoseconds) and short duration (nano to microseconds) in a pulsed corona discharge reactor. The pulsed plasma generator with a triggered switch has been developed. Its corona current in load can be adjusted by applied voltage and repetition rate. We investigated the performance of the pulsed plasma generator by analyzing the concentration of ozone in small reactor. This paper describes the electrical characteristics of the pulse generator with a voltage of 30 kV at repetition rate of 50 PPS. In addition, we briefly discuss a configuration of the system and initial test results.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.254-254
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• 2011

The memories with nano-particles are very attractive because they are promising candidates for low operating voltage, long retention time and fast program/erase speed. In recent, various nano-floating gate memories with metal-oxide nanocrystals embedded in organic and inorganic layers have been reported. Because of the carrier generation in semiconductor, induced photon pulse enhanced the program/erase speed of memory device. We studied photo-induced electrical properties of these metal-oxide nanocrystal memory devices. At first, 2~10-nm-thick Sn and In metals were deposited by using thermal evaporation onto Si wafer including a channel with $n^+$ poly-Si source/drain in which the length and width are 10 ${\mu}m$ each. Then, a poly-amic-acid (PAA) was spin coated on the deposited Sn film. The PAA precursor used in this study was prepared by dissolving biphenyl-tetracarboxylic dianhydride-phenylene diamine (BPDA-PDA) commercial polyamic acid in N-methyl-2-pyrrolidon (NMP). Then the samples were cured at 400$^{\circ}C$ for 1 hour in N atmosphere after drying at 135$^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was followed by using a thermal evaporator, and then the gate electrode was defined by photolithography and etching. The electrical properties were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. Also, the optical pulse for the study on photo-induced electrical properties was applied by Xeon lamp light source and a monochromator system.

• International Journal of Precision Engineering and Manufacturing
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• 제6권2호
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• pp.5-11
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• 2005

Among the micro machining techniques, micro EDM is generally used for machining micro holes, pockets, and micro structures on difficult-cut-materials. Micro EDM parameters such as applied voltage, capacitance, peak current, pulse width, duration time are very important to fabricate the tool electrode and produce the micro structures. Developed micro EDM machine is composed of a 3-axis driving system and RC circuit equipped with pulse generator. In this paper, using micro EDM machine, the characteristics of micro EDM process are investigated and it is applied to micro holes, slots, and pockets machining. Through experiments, relations between machined surface and voltages and between MRR and feedrate are investigated. Also the trends of tool wear are investigated in case of hole and slot machining.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 B
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• pp.1274-1276
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• 2000

크로징 스위치인 아바란치 트랜지스터를 사용하여 수 나노$\sim$수십 나노초의 고전압 펄스를 만들 수 있다. 반도체소자의 발전으로 인하여 빠른 회복시간을 갖는 소자가 개발되어 다이오드를 이용한 오프닝 스위치로도 수 나노$\sim$수십 나노초의 고전압 펄스를 얻을 수 있게 되었다. 본 논문에서는 전자총 그리드 펄서를 개발하기 위하여 자기스위치를 사용한 펄스압축기술(MPC : magnetic pulse compression)과 SOS (semiconductor opening switch)다이오드를 이용한 펄스 발생기에 관한 연구를 수행하였고 실험결과로 $50{\Omega}$부하에 대하여 3 kV, 26 nsec 펄스를 얻었다.