• 제목/요약/키워드: nano-powder

검색결과 1,131건 처리시간 0.032초

The quality investigation of 6H-SiC crystals grown by conventional PVT method with various SiC powders

  • Yeo, Im-Gyu;Lee, Won-Jae;Shin, Byoung-Chul
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
    • /
    • pp.113-114
    • /
    • 2009
  • Silicon carbide is one of the most attractive and promising wide band-gap semiconductor material with excellent physical properties and huge potential for electronic applications. Up to now, the most successful method for growth of large SiC crystals with high quality is the physical vapor transport (PVT) method [1, 2]. Since further reduction of defect densities in larger crystal are needed for the true implementation of SiC devices, many researchers are focusing to improve the quality of SiC single crystal through the process modifications for SiC bulk growth or new material implementations [3, 4]. It is well known that for getting high quality SiC crystal, source materials with high purity must be used in PVT method. Among various source materials in PVT method, a SiC powder is considered to take an important role because it would influence on crystal quality of SiC crystal as well as optimum temperature of single crystal growth, the growth rate and doping characteristics. In reality, the effect of powder on SiC crystal could definitely exhibit the complicated correlation. Therefore, the present research was focused to investigate the quality difference of SiC crystal grown by conventional PVT method with using various SiC powders. As shown in Fig. 1, we used three SiC powders with different particles size. The 6H-SiC crystals were grown by conventional PVT process and the SiC seeds and the high purity SiC source materials are placed on opposite side in a sealed graphite crucible which is surrounded by graphite insulation[5, 6]. The bulk SiC crystal was grown at $2300^{\circ}C$ of the growth temperature and 50mbar of an argon pressure. The axial thermal gradient across the SiC crystal during the growth is estimated in the range of $15\sim20^{\circ}C/cm$. The chemical etch in molten KOH maintained at $450^{\circ}C$ for 10 min was used for defect observation with a polarizing microscope in Nomarski mode. Electrical properties of bulk SiC materials were measured by Hall effect using van der Pauw geometry and a UV/VIS spectrophotometer. Fig. 2 shows optical photographs of SiC crystal ingot grown by PVT method and Table 1 shows electrical properties of SiC crystals. The electrical properties as well as crystal quality of SiC crystals were systematically investigated.

  • PDF

고상반응법을 이용한 Li2MnSiO4 합성 (Synthesis of Li2MnSiO4 by Solid-state Reaction)

  • 김지수;심중표;박경세;선호정
    • 한국전기전자재료학회논문지
    • /
    • 제25권5호
    • /
    • pp.398-402
    • /
    • 2012
  • Synthesis of $Li_2MnSiO_4$ was attempted by the conventional solid-state reaction method, and the phase formation behavior according to the change of the calcination condition was investigated. When the mixture of the three source materials, $Li_2O$, MnO and $SiO_2$ powders, were used for calcination in air, it was difficult to develop the $Li_2MnSiO_4$ phase because the oxidation number of $Mn^{2+}$ could not be maintained. Therefore, two-step calcination was applied: $Li_2SiO_3$ was made from $Li_2O$ and $SiO_2$ at the first step, and $Li_2MnSiO_4$ was synthesized from $Li_2SiO_3$ and MnO at the second step. It was easy to make $Li_2MnSiO_3$ from $Li_2O$ and $SiO_2$. $Li_2MnSiO_4$ single phase was developed by the calcination at $900^{\circ}C$ for 24 hr in Ar atmosphere as the oxidation of $Mn^{2+}$ was prevented. However, the $Li_2MnSiO_4$ was ${\gamma}-Li_2MnSiO_4$, one of the polymorph of $Li_2MnSiO_4$, which could not be used as the cathode materials in Li-ion batteries. By applying the additional low temperature annealing at $400^{\circ}C$, the single phase ${\beta}-Li_2MnSiO_4$ powder was synthesized successfully through the phase transition from ${\gamma}$ to ${\beta}$ phase.

어트리션밀을 이용한 CoAl2O4 나노 무기 안료의 제조 및 특성 평가 (Preparation and characterization of CoAl2O4 blue ceramic nano pigments by attrition milling)

  • 이기찬;윤종원;김진호;황광택;한규성
    • 한국결정성장학회지
    • /
    • 제23권5호
    • /
    • pp.255-264
    • /
    • 2013
  • $CoAl_2O_4$는 열적 및 화학적으로 매우 안정한 물질이며 독특한 광학적 특성으로 인해 도자기 제품, 유리, 페인트, 플라스틱을 장식하는 세라믹 착색제로 사용되어져 왔다. 본 연구에서는 착체중합법(Polymerized complex method)과 고상합성법(Solid state reaction)을 이용하여 단상의 $CoAl_2O_4$ 청색 무기 안료를 합성하였고, 잉크젯 프린팅용 잉크로의 응용 시 노즐 막힘 및 분산안정성과 같은 문제점을 방지하기 위해 고에너지 밀링 공정 중 하나인 어트리션밀을 이용하여 입자를 미세화하였다. 밀링 공정은 직경 1 mm의 지르코니아 볼을 이용하여 BPR(Ball to powder weight ratio) 100 : 1, 800 rpm의 조건에서 3시간 동안 진행되었다. 합성된 안료는 XRD, FE-SEM, TEM, PSA, 그리고 CIE $L^*a^*b^*$ 측정을 통하여 어트리션밀링 전후의 특성을 분석하였다. XRD 측정 결과 단상의 $CoAl_2O_4$ 청색 무기 안료가 합성되었고, 고에너지 밀링 공정을 통하여 100~200 nm의 입자 크기를 가지는 청색 나노 무기 안료를 얻었다.

졸-겔법에 의한 Cobalt 치환된 Ba-ferrite 분말의 자기적 특성 (Magnetic Properties of Co-substituted Ba-ferrite Powder by Sol-gel Method)

  • 최현승;박효열;윤석영;신학기;김태옥
    • 한국세라믹학회지
    • /
    • 제39권8호
    • /
    • pp.789-794
    • /
    • 2002
  • 본 연구에서는 TMS[Tetramethylsilane:$Si(CH_3)_4$], $NH_3$$H2$를 이용하여 나노크기의 Si-C-N precursor 분말을 합성하기 위하여 CVC법을 이용하였으며 반응온도, TMS/$NH_3$ 비 그리고 TMS/$H_2$ 비를 변화시켰다. XRD와 FESEM 분석을 통해서 결정상과 입자의 크기 그리고 입자의 형태를 관찰하고자 하였으며, 그 결과 제조된 분말은 모든 실험 조건하에서 87∼130 nm 크기를 지닌 균일한 구형의 비정질 분말이 얻어졌다. 입자 크기는 반응온도의 감소에 따라 감소하였으며, 또한 TMS/$NH_3$, TMS/$H_2$ 비가 작아질수록 감소하였다. EA 분석 결과 제조된 분말은 Si, N, C, H로 이루어졌음을 알 수 있었으며 FT-IR를 통하여 Si-N, C-N, Si-C 결합을 가진 Si-C-N precursor 분말이 제조되었다.

화학기상응축법을 이용한 Si-C-N Precursor 분말의 합성 및 특성평가 (Synthesis and Characterization of Si-C-N Precursor by Using Chemical Vapor Condensation Method)

  • 김형인;김대정;홍진석;소명기
    • 한국세라믹학회지
    • /
    • 제39권8호
    • /
    • pp.783-788
    • /
    • 2002
  • 본 연구에서는 TMS[Tetramethylsilane:Si($CH_3)_4$], $NH_3$$H_2$를 이용하여 나노크기의 Si-C-N precursor 분말을 합성하기 위하여 CVC법을 이용하였으며 반응온도, TMS/$NH_3$ 비 그리고 TMS/$H_2$ 비를 변화시켰다. XRD와 FESEM 분석을 통해서 결정상과 입자의 크기 그리고 입자의 형태를 관찰하고자 하였으며, 그 결과 제조된 분말은 모든 실험 조건하에서 87∼130 nm 크기를 지닌 균일한 구형의 비정질 분말이 얻어졌다. 입자 크기는 반응온도의 감소에 따라 감소하였으며, 또한 TMS/$NH_3$, TMS/$H_2$ 비가 작아질수록 감소하였다. EA 분석 결과 제조된 분말은 Si, N, C, H로 이루어졌음을 알 수 있었으며 FT-IR를 통하여 Si-N, C-N, Si-C 결합을 가진 Si-C-N precursor 분말이 제조되었다

상온 진공 분말 분사공정에 의해 제조된 TiO2 광촉매 막의 두께변화에 따른 광촉매 특성 (Effect of Film Thickness on the Photocatalytic Performance of TiO2 Film Fabricated by Room Temperature Powder Spray in Vacuum Process)

  • 김근영;류정호;한병동;최종진;윤운하;이병국;박동수;박찬
    • 한국세라믹학회지
    • /
    • 제45권12호
    • /
    • pp.839-844
    • /
    • 2008
  • $TiO_2$ is an environment-friendly semiconducting material, and it has photocatalytic and hydrophilic effect. There are a lot of reports on the photocatalytic characteristics of $TiO_2$, such as organic pollutants resolving, anti-bacterial, and self-purification material. In this paper, $TiO_2$ micron-sized powders were deposited on the glass by room temperature powder spray in vacuum process, so called aerosol deposition (AD), and nano-grained $TiO_2$ photocatalytic thin films were fabricated. The thickness of the films were controlled by changing the number of deposition cycle. Morphologies and characteristics of the AD-$TiO_2$ thin films were examined by SEM, TEM, XRD, and UV-Visible Spectrophotometer. As the thickness of $TiO_2$ films increased, surface roughness increased. By this increment, the reaction area between film and pollutant was enlarged, resulting in better photocatalytic property.

용매열 합성법을 통하여 알루미늄을 도핑한 니켈옥사이드의 제조와 그 결정구조적, 전기적 특성 (Preparation of Al-doped NiO via Solvothermal Synthesis and its Crystal Structural and Electrical Properties)

  • 홍선기;지미정;이민진;정성헌;설광희;최병현
    • 한국재료학회지
    • /
    • 제22권11호
    • /
    • pp.631-635
    • /
    • 2012
  • Nickel oxide was doped with a wide range of concentrations (mol%) of Aluminum (Al) by solvothermal synthesis; single-phased nano powder of nickel oxide was generated after calcination at$900^{\circ}C$. When the concentration of Al dopant was increased, the reduced intensity was confirmed through XRD analysis. Lattice parameters of the synthesized NiO powder were decreased after treatment of the dopant; parameters were increased when the concentration of Al was over the doping limit (5 mol% Al). The binding energy of $Ni^{2+}$ was chemically shifted to $Ni^{3+}$ by doping $Al^{3+}$ ion, as confirmed by the XPS analysis. The tilted structure of the synthesized NiO with 5 mol% Al dopant and the polycrystalline structure of the $Ni_{0.75}Al_{0.25}O$ were observed by HR-TEM analysis. The electrical conductivity of the newly synthesized NiO was highly improved by Al doping in the conductivity test. The electrical conductivity values of the commercial NiO and the synthesized NiO with 5 mol% Al dopant ($Ni_{0.95}Al_{0.05}O$) were 1,400 s/cm and 2,230 s/cm at $750^{\circ}C$, respectively. However, the electrical conductivity of the synthesized NiO with 10 mol% Al dopant ($Ni_{0.9}Al_{0.1}O$) decreased due to the scattering of free-electrons caused by the large number of impurity atoms; the electrical conductivity of $Ni_{0.9}Al_{0.1}O$ was 545 s/cm at $750^{\circ}C$.

분무열분해 공정에 의한 평균입도 50 nm 이하의 코발트 산화물 분체 제조에 미치는 공기압력의 영향 (Effect of Ambient Air Pressure on the Preparation of Cobalt Oxide Powder with Average Particle Size below 50 nm by Spray Pyrolysis Process)

  • 김동희;유재근
    • 자원리싸이클링
    • /
    • 제26권1호
    • /
    • pp.22-29
    • /
    • 2017
  • 본 연구에서는 코발트 염화물($CoCl_2$) 용액을 원료로 하여 분무열분해 반응에 의하여 평균입도 50 nm 이하의 코발트 산화물($Co_3O_4$) 분말을 제조하였으며 분위기 기체인 공기의 압력 변화에 따른 입자들의 특성 변화를 파악하였다. 공기압력이 $0.1kg/cm^2$인 경우에는 형성된 액적형태들은 구형이 거의 없었으며 매우 심하게 분열된 상태를 나타내고 있었다. 액적형태를 구성하는 나노 입자들의 평균입도는 약 40 nm이었다. 공기압력이 $0.5kg/cm^2$으로 증가된 경우에는 액적형태를 구성하는 나노 입자들의 평균입도는 약 35 nm로 감소되었다. 공기압력이 $3kg/cm^2$으로 증가된 경우에는 액적형태에서 구형의 비율이 현저하게 증가하였고 분열된 정도는 감소하였으며 나노 입자들의 평균입도는 약 30 nm로 감소하였다. 공기압력이 $0.1kg/cm^2$로부터 $1kg/cm^2$로 증가하는 경우에는 XRD 피크들의 강도가 거의 변화가 없는 반면 비표면적은 감소함을 나타내었다. 공기압력이 $3kg/cm^2$로 증가하는 경우에는 XRD 피크들의 강도는 약간 감소하는 반면 비표면적은 증가하고 있었다.

부유 및 퇴적의 분체 조건이 화재폭발 특성에 미치는 영향 (Effect of Powder Condition on the Fire and Explosion Characteristics of Suspended and Deposited Dusts)

  • 한우섭;서동현;최이락;임진호
    • Korean Chemical Engineering Research
    • /
    • 제60권2호
    • /
    • pp.229-236
    • /
    • 2022
  • 동일 분체특성의 분진이 평균입경, 농도, 분진조건(부유 또는 퇴적) 변화에 따른 화재폭발 위험성을 조사하였다. 이를 위해 20L분진폭발시험장치, 열중량분석장치, 연소속도시험장치(UN시험법)를 사용하였다. 4종 분진(Sugar, Mg, Al, Zr)의 입경이 서로 다른 8개 분진 시료에 대하여 부유 분진의 폭발특성과 화염전파속도(FPV), 그리고 퇴적분진의 화염확산속도(FSV)를 조사하였다. 부유 분진 조건에서 Mg 및 Al 분진은 입경이 감소하면 폭발 위험성이 증가하였지만, Sugar는 입경 변화에 따른 폭발 위험성의 영향이 거의 나타나지 않았다. 부유 분진의 화염전파속도(FPV)는 마이크로 범위에서의 입경 변화보다 마이크로에서 나노로 입경이 감소하면 크게 증가하였다. 퇴적층의 화염확산속도(FSV)는 수평면(기울기 0°)보다 경사면(기울기 30°)에서 증가하는 경향을 나타냈으며, 경사면(기울기 30°) 퇴적층 조건에서는 상방 전파가 하방 전파보다 높게 나타났다.

Optimal Condition of Hydroxyapatite Powder Plasma Spray on Ti6Al4V Alloy for Implant Applications

  • Ahn, Hyo-Sok;Lee, Yong-Keun
    • 한국재료학회지
    • /
    • 제22권4호
    • /
    • pp.211-214
    • /
    • 2012
  • Optimal conditions for HA plasma spray-coating on Ti6Al4V alloy were investigated in order to obtain enhanced bone-bonding ability with Ti6Al4V alloy. The properties of plasma spray coated film were analyzed by SEM, XRD, surface roughness measurement, and adhesion strength test because the film's transformed phase and crystallinity were known to be influential to bone-bonding ability withTi6Al4V alloy. The films were formed by a plasma spray coating technique with various combinations of plasma power, spray distance, and auxiliary He gas pressure. The film properties were analyzed in order to determine the optimal spray coating parameters with which we will able to achieve enhanced bone-bonding ability with Ti6Al4V alloy. The most influential coating parameter was found to be the plasma spray distance to the specimen from the spray gun nozzle. Additionally, it was observed that a relatively higher film crystallinity can be obtained with lower auxiliary gas pressure. Moderate adhesion strength can be achievable at minimal plasma power. That is, adhesion strength is minimally dependent on the plasma power. The combination of shorter spray distance, lower auxiliary gas pressure, and moderate spray power can be recommended as the optimal spray conditions. In this study, optimal plasma spray coated films were formed with spray distance of 70 mm, plasma current of 800 A, and auxiliary gas pressure of 60 psi.