• The Journal of Bigdata
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• v.7 no.1
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• pp.63-73
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• 2022

COVID-19 has continued from 2020 to the present, and many social changes have occurred. Wearing a mask has become mandatory, and if you do not wear a mask, you cannot use public facilities or restaurants. For this reason, most public facility entrances are equipped with a mask recognition system to check whether a mask is worn. However, it is unclear whether people who cover their mouths with a scarf or who do not wear a mask properly can be identified. In this study, we proposed an embedded mask recognition system using YOLOv5. Unlike the existing mask recognition system, it was able to distinguish not only whether a mask was worn, but also whether a mask was worn in various exceptional situations, such as a person with a scarf or a person covering their mouth with their hands, and showed excellent performance when mounted on the Nvida Jetson Nano Board.

• Bulletin of the Korean Chemical Society
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• v.35 no.3
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• pp.705-708
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• 2014

We demonstrate the blue InGaN/GaN multiple quantum wells light-emitting diodes (LEDs) with an embedded air-gap photonic crystal (PC) which was fabricated by the lateral epitaxial overgrowth of GaN layer on the tungsten (W) nano-masks. The periodic air-gap PC was formed by the chemical reaction of hydrogen with GaN on the W nano-mask. The optical output power of LEDs with an air-gap PC was increased by 26% compared to LEDs without an air-gap PC. The enhanced optical output power was attributed to the improvement in internal quantum efficiency and light extraction efficiency by the air-gap PC embedded in GaN layer.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.978-982
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• 2004

We present high aspect ratio 100nm-scale nickel stamper using e-beam lithography process and Cr/Qz mask for the injection molding process of nano grating patterns. Conventional photolithography blank mask (CrON/Cr/Qz) consists of quartz substrate, Cr layer of UV protection and CrON of anti-reflection layer. We have used Cr/Qz blank mask without anti-reflection layer of CrON which is non-conductive material and ebeam lithography process in order to simplify the nickel electroplating process. In nickel electroplating process, we have used Cr layer of UV protection as seed layer of nickel electroplating. Fabrication conditions of photolithography mask using e-beam lithography are optimized with respect to CrON/Cr/Qz blank mask. In this paper, we have optimized e-beam lithography process using Cr/Qz blank mask and fabricated nickel stamper using Cr seed layer. CrON/Cr/Qz blank mask and Cr/Qz blank mask require optimal e-beam dosage of $10.0{\mu}C/cm^2$ and $8.5{\mu}C/cm^2$, respectively. Finally, we have fabricated $116nm{\pm}6nm-width$ and $240nm{\pm}20nm-height$ nickel grating stamper for the injection molding pattern.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.4
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• pp.1993-1998
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• 2011

Semiconductor industry needs to have fine patterns in order to fabricate the high density integrated circuit. For nano-scale patterns, hard-mask is used to multi-layer structure which is formed by CVD (chemical vaporized deposition) process. In this work, we prepared single-layer hard-mask by using organic-inorganic hybrid polymer for spin-on process. The inorganic part of hard-mask was much easier etching than photo resist layer. Beside, the organic part of hard-mask was much harder etching than substrate layer. We characterized the optical and morphological properties to the hard mask films using organic-inorganic hybrid polymer, and then etch rate of photo resist layer and hard-mask film were compared. The hybrid polymer prepared from organic and inorganic materials was found to be useful hard-mask film to form the nano-patterns.

• Journal of the Korean Physical Society
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• v.73 no.9
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• pp.1346-1350
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• 2018

An electrode-evaporation technology on both the top and bottom sides of the bare vertical-type single chip separated from the traditional substrate by cooling, was developed for III-nitride vertical-type single chip LEDs with thick GaN epilayer. The post-process of the cooling step was followed by sorting the bare vertical-type single chip LEDs into the holes in a pocket-type shadow mask for deposition of the electrodes at the top and bottom sides of bare vertical-type single chip LEDs without the traditional substrate for electrode evaporation technology for vertical-type single chip LEDs. The variation in size of the hole between the designed shadow mask and the deposited electrodes owing to the use of the designed pocket-type shadow mask is investigated. Furthermore, the electrical and the optical properties of bare vertical-type single chip LEDs deposited with two different shapes of n-type electrodes using the pocket-type shadow mask are investigated to explore the possibility of the e-beam evaporation method.

• Korean Journal of Optics and Photonics
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• v.23 no.3
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• pp.97-102
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• 2012

In general, one of the methods used to measure distortion is to use the full image of the regular pattern. However, because of low accuracy, this method is mainly used for an optical system such as a camera.. In order to measure distortion with high accuracy less than 1um, one can use the method of measuring the exact position of a mask image. In this case, a high accuracy stage with a laser encoder is required. In this paper, we investigate measurement of the distortion of high accuracy with a simple manual stage. The main idea is that we split and measure the mask image with the overlapping area by using CCD or CMOS, and then we get an exact position of the mask image by integrating the adjacent split images. We use the Canny Edge Detection method to get the position information of the mask image and we researched the process to exactly calculate distortion by using coordinate transformations and a least square method.

• Korean Journal of Materials Research
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• v.16 no.3
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• pp.151-156
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• 2006

A method for fabrication of nano-scale GaN structure by inductively coupled plasma etching is proposed, exploiting a thermal dewetting of Pt thin film as an etch mask. The nano-scale Pt metal islands were formed by the dewetting of 2-dimensional film on $SiO_2$ dielectric materials during rapid thermal annealing process. For the case of 30 nm thick Pt films, pattern formation and dewetting was initiated at temperatures greater $600^{\circ}C$. Controlling the annealing temperature and time as well as the thickness of the Pt metal film affected the size and density of Pt islands. The activation energy for the formation of Pt metal island was calculated to be 23.2 KJ/mole. The islands show good resistance to dry etching by a $CF_4$ based plasma for dielectric etching indicating that the metal islands produced by dewetting are suitable for use as an etch mask in the fabrication of nano-scale structures.

• Journal of Powder Materials
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• v.10 no.4
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• pp.262-269
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• 2003

Nano-sized Ni-ferrite powder was fabricated by spray pyrolysis process using the waste solution resulting from shadow mask processing. The average particle size of the powder was below 100 nm. The effects of the concentration of raw material solution, the nozzle tip size and air pressure on the properties of powder were studied. As the concentration increased, the average particle size of the powder gradually increased and its specific surface area decreased, but size distribution was much wider and the fraction of the Ni-ferrite phase greatly increased as the concentration increasing. As the nozzle tip size increased from 1 mm to 2 mm, the average particle size of the powder decreased. In case of 3 mm nozzle tip size, the average particle size of the powder increased slightly. On the other hand, in case of 5 mm nozzle tip size, average particle size of the powder decreased. Size distribution of the powder was unhomogeneous, and the fraction of the Ni-ferrite phase decreased as the nozzle tip size increasing. As air pressure increased up to 1 kg/$cm^2$, the average particle size of the powder decreased slightly, on the other hand, the fraction of the Ni-ferrite phase was almost constant. In case of 3kg/$cm^2$ air pressure, average particle size of the powder and the fraction of the Ni-ferrite phase remarkably decreased, but size distribution was narrow.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.8 s.185
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• pp.39-46
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• 2006

Nano-scale fabrication of silicon substrate based on the use of atomic force microscopy (AFM) was demonstrated. A specially designed cantilever with diamond tip, allowing the formation of damaged layer on silicon substrate by a simple scratching process, has been applied instead of conventional silicon cantilever for scanning. A thin mask layer forms in the substrate at the diamond tip-sample junction along scanning path of the tip. The mask layer withstands against wet chemical etching in aqueous KOH solution. Diamond tip acts as a patterning tool like mask film for lithography process. Hence these sequential processes, called tribo-nanolithography, TNL, can fabricate 2D or 3D micro structures in nanometer range. This study demonstrates the novel fabrication processes of the micro cantilever and diamond tip as a tool for TNL using micro-patterning, wet chemical etching and CVD. The developed TNL tools show outstanding machinability against single crystal silicon wafer. Hence, they are expected to have a possibility for industrial applications as a micro-to-nano machining tool.

• Journal of Electrical Engineering and Technology
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• v.4 no.4
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• pp.546-551
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• 2009

In this paper, we describe a self-aligned fabrication method for a nano-patterned bottom electrode using flood exposure from the backside. Misalignments between layers could cause the final devices to fail after the fabrication of the nano-scale bottom electrodes. A self-alignment was exploited to embed the bottom electrode inside the glass substrate. Aluminum patterns act as a dry etching mask to fabricate glass trenches as well as a self-aligned photomask during the flood exposure from the backside. The patterned photoresist (PR) has a negative sidewall slope using the flood exposure. The sidewall slopes of the glass trench and the patterned PR were $54.00^{\circ}$ and $63.47^{\circ}$, respectively. The negative sidewall enables an embedment of a gold layer inside $0.7{\mu}m$ wide glass trenches. Gold residues on the trench edges were removed by the additional flood exposure with wet etching. The sidewall slopes of the patterned PR are related to the slopes of the glass trenches. Nano-scale bottom electrodes inside the glass trenches will be used in beam resonators operating at high resonant frequencies.