• Title/Summary/Keyword: nano-device

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Spin Hall effect in Au films

  • Kim, Seong-Hoon;Eom, Jong-Hwa;Chang, Joon-Yeon;Han, Suk-Hee
    • Proceedings of the Korean Magnestics Society Conference
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    • 2006.11a
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    • pp.74-75
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    • 2006

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The Effects of Growth Temperature and Substrate Tilt Angle on GalnP/GaAs Tandem Solar Cells

  • Jun, Dong-Hwan;Kim, Chang-Zoo;Kim, Hog-Young;Shin, Hyun-Beom;Kang, Ho-Kwan;Park, Won-Kyu;Shin, Ki-Soo;Ko, Chul-Gi
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.9 no.2
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    • pp.91-97
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    • 2009

  • The performance of GaInP/GaAs tandem solar cells with AlInP growth temperatures of 680$^{\circ}C$ and 700 $^{\circ}C$ on n-type GaAs (100) substrate with 2$^{\circ}$ and 6$^{\circ}$ tilt angles has been investigated. The series resistance and open circuit voltage of the fabricated tandem solar cells are affected by the substrate tilt angles and the growth temperatures of the window layer when zinc is doped in the tunnel diode. With carbon doping as a p-type doping source in the tunnel diode and the effort of current matching between top and bottom cells, GaInP/GaAs tandem solar cell has been exhibited 25.58% efficiency.

  • https://doi.org/10.5573/JSTS.2009.9.2.091 인용 PDF KSCI

Characteristics of Erbium silicided n-type Schottky barrier tunnel transistors (Erbium 실리사이드를 이용하여 제작한 n-형 쇼트키장벽 관통트랜지스터의 전기적 특성)

  • Moongyu Jang;Kicheon Kang;Sunglyul Maeng;Wonju Cho;Lee, Seongjae;Park, Kyoungwan
    • Proceedings of the IEEK Conference
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    • 2003.07b
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    • pp.779-782
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    • 2003

  • The theoretical and experimental current-voltage characteristics of Erbium silicided n-type Schottky barrier tunneling transistors (SBTTs) are discussed. The theoretical drain current to drain voltage characteristics show good correspondence and the extracted Schottky barrier height is 0.24 eV. The experimentally manufactured n-type SBTTs with 60 nm gate lengths show typical transistor behaviors in drain current to drain voltage characteristics. The drain current on/off ratio is about 10$^{5}$ at low drain voltage regime in drain current to gate voltage characteristics.

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