• Journal of the Korean Society for Precision Engineering
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• v.32 no.10
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• pp.911-916
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• 2015

In the nano/micro scale, material properties are dependent on the size-scale of a structure. However, conventional micro-scale tensile tests have limitations to obtain reliable values of nano-scale material properties owing to residual stress and elastic slippage in the gripping/aligning process. The indenter-driven nano-scale tensile test provides prominent advantages simple testing device, high-quality nano-scale metallic specimen with negligible residual stress. In this paper, two-types of specimens (a specimen with multi-testing parts and a specimen with a single-testing part) are discussed. Focused ion beam (FIB) is employed to fabricate a nano-scale specimen from a thin nickel film. Using the specimen with a single-testing part, we obtained a nano-scale stress-strain curve of electroplated nickel film.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2009.05a
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• pp.432-434
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• 2009

Metal nano-wire arrays on Cu-coated seed layers were fabricated by aqueous solution method using sulfate bath at room temperature. The seed layers were coated on Anodic aluminum oxide (AAO) bottom substrates by electrochemical deposition technique, length and diameter of metal nano-wires were dominated by controlling the deposition parameters, such as deposition potential and time, electrolyte temperature. Anodic aluminum oxide (AAO) was used as a template to prepare highly ordered Ni, Fe, Co and Cu multilayer magnetic nano-wire arrays. This template was fabricated with two-step anodizing method, using dissimilar solutions for Al anodizing. The pore of anodic aluminum oxide templates were perfectly hexagonal arranged pore domains. The ordered Ni, Fe, Co and Cu systems nano-wire arrays were characterized by Field Emission Scanning Electron Microscopy (FE-SEM) and Vibrating Sample Magnetometer (VSM). The ordered Ni, Fe, Co and Cu systems nano-wires had different preferred orientation. In addition, these nano-wires showed different magnetization properties under the electrodepositing conditions.

• Korean Journal of Materials Research
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• v.13 no.10
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• pp.635-639
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• 2003

We investigated dry etching of GaAs and AiGaAs in a high density planar inductively coupled plasma system with BCl$_3$and BCl$_3$/Ar gas chemistry. A detailed etch process study of GaAs and ALGaAs was peformed as functions of ICP source power, RIE chuck power and mixing ratio of $BCl_3$ and Ar. Chamber process pressure was fixed at 7.5 mTorr in this study. The ICP source power and RIE chuck power were varied from 0 to 500 W and from 0 to 150 W, respectively. GaAs etch rate increased with the increase of ICP source power and RIE chuck power. It was also found that etch rates of GaAs in $15BCi_3$/5Ar plasmas were relatively high with applied RIE chuck power compared to pure 20 sccm $BCl_3$plasmas. The result was the same as AlGaAs. We expect that high ion-assisted effect in $BCl_3$/Ar plasma increased etch rates of both materials. The GaAs and AlGaAs features etched at 20 sccm $BCl_3$and $15BCl_3$/5Ar with 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr showed very smooth surfaces(RMS roughness < 2 nm) and excellent sidewall. XPS study on the surfaces of processed GaAs also proved extremely clean surfaces of the materials after dry etching.

• Korean Journal of Materials Research
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• v.13 no.12
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• pp.775-778
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• 2003

We studied InP etching in high density planar inductively coupled $BCl_3$and $BCl_3$/Ar plasmas(PICP). The investigated process parameters were PICP source power, RIE chuck power, chamber pressure and $BCl_3$/Ar gas composition. It was found that increase of PICP source power and RIE chuck power increased etch rate of InP, while that of chamber pressure decreased etch rate. Etched InP surface was clean and smooth (RMS roughness <2 nm) with a moderate etch rate (300-500 $\AA$/min) after the planar $BCl_3$/Ar ICP etching. It may make it possible to open a new regime of InP etching with $CH_4$$H_2$-free plasma chemistry. Some amount of Ar addition (<50%) also improved etch rates of InP, while too much Ar addition reduced etch rates of InP.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.63-64
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• 2008

Electrokinetic motion of fullerene ($C_{60}$) particles in liquid crystal (LC) medium under an in-plane electric field has been studied for the application to the electronic paper display. Fullerenes move in the direction of applied electric field due to interaction between the induced dipole moment on $C_{60}$ and external electric field at lower threshold voltages compared to other devices such as QR-LPD (Quick Response Liquid Powder Display) and TBD (Twisting Ball Display). We also confirmed the bistability of fullerene particles in LC medium and the results showed that the 87% and 81% of original reflectance or transmittance of image was retained after 24 hours and 48 hours respectively. Our studies show the possibility that fullerenes can be used for electronic paper display.

• Membrane Journal
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• v.19 no.3
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• pp.237-243
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• 2009

Polyimides synthesized by using 2,2'-bis(3,4-carboxylphenyl) hexafluoropropane dianhydride (6FDA) and 4,4'-diaminodiphenylmethane (DAM) were sulfonated according to reaction times, 5 min to 20 min. And the resulting polyimide membranes were investigated in terms of permeability and separation factor for $N_2$, $O_2$, and $CO_2$ gases. The introduction of bulky group, $-{SO_3}H$, leads to the decreases of both diffusivities and solubilities for all the range of reaction times. At 20 min of sulfonation, the diffusivity and solubility of $N_2$ decrease up to 21% and 26%, respectively. Overall separation efficiencies for $O_2/N_2$ and $CO_2/N_2$ increase as the reaction time increases to 20 min.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.610-613
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• 2009

New rod-disc liquid crystal (LC) molecule RD12 (12 is the number of carbon atoms between the rod and disc mesogenic liquid crystals) was synthesized via the chemical attachment of six cyanobiphenly calamitic mesogens linked to the triphenyl discotic mesogen with six alkyl chain linkage. Aligning characteristics associated with homogenous alignment is investigated at first and then field-dependent molecular reorientation under a vertical electric field is studied. Interestingly, they show abnormal slow molecular transition from initiate state (no electric field condition) to certain voltage. In this condition, we observe the molecular competition during reorientation. However, once a tilting direction of disk molecules are defined, the frustration is not observed anymore. The origin of this phenomenon is explained with a suggested model for the first time.

• Korean Journal of Materials Research
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• v.18 no.1
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• pp.32-37
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• 2008

The electrical, optical, structural and surface properties of an indium tin oxide (ITO) film grown on a flexible PET substrate using a specially designed roll-to-roll (R2R) sputtering system as a function of the DC power, $Ar/O_2$ flow ratio, and rolling speed is reported. It was observed that both the electrical and optical properties of the ITO film on the PET substrate were critically dependent on the $Ar/O_2$ flow ratio. In addition, x-ray diffraction examination results showed that the structure of the ITO film on the PET substrate was an amorphous structure regardless of the DC power and the $Ar/O_2$ flow ratio due to a low substrate temperature, which was maintained constant by a main cooling drum. Under optimized conditions, ITO film with resistivity of $6.44{\times}10^{-4}{\Omega}-cm$ and transparency of 86% were obtained, even when prepared at room temperature. Furthermore, bending test results exhibited that R2R-grown ITO film had good flexibility which would be applicable to flexible displays and solar cells.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.33 no.3
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• pp.190-195
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• 2009

All the failure in fatigue of torsion, bending and rolling contact, and in sliding wear begins mostly from surface. So much efforts have been invested to the surface technology which deal these problems during past decades, but the industrial demand keeps growing and more significant requirements are added to researchers and engineers. Nano crystal surface modification technology which makes the surface layers into nano crystalline, induces big and deep compressive residual stress, increases surface hardness, improves surface hardness, and make micro dimples structure on surface is an emerging technology which can break limits of current surface technology and relieve the burden of researchers and engineers. In this study, a nano crystal surface modification technology which is calling UNSM(Ultrasonic nano crystal surface modification) technology, is introduced and how it has been applied to industry to solve these failure problems is explained.

• Journal of Magnetics
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• v.12 no.4
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• pp.144-148
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• 2007

We report on the observation of p-type conductivity and ferromagnetism in diluted magnetic semiconductor $(Zn_{0.97}Mg_{0.01}Mn_{0.02})O:P$ films grown on $SiO_2/Si$ substrates by pulsed laser deposition. The p-type conduction with hole concentration over $10^{18}cm^{-3}$ is obtained by codoping of Mg and P followed by rapid thermal annealing in an $O_2$ atmosphere. Structural and compositional analyses for the p-type $(Zn_{0.97}Mg_{0.01}Mn_{0.02})O:P$ films annealed at $800^{\circ}C$ indicates that highly c-axis oriented homogeneous films were grown without any detectable formation of secondary phases. The films were found to be transparent in the visible range. The magnetic measurements clearly revealed an enhancement of room temperature ferromagnetism by p-type doping.