• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.51.1-51.1
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• 2007

• Carbon letters
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• 제16권4호
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• pp.223-232
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• 2015

This review presents current progress in the preparation methods of liquid crystalline nano-carbon materials and the liquid crystalline spinning method for producing nano-carbon fibers. In particular, we focus on the fabrication of liquid crystalline carbon nanotubes by spinning from superacids, and the continuous production of macroscopic fiber from liquid crystalline graphene oxide.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.295-296
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• 2009

There are various application of liquid crystal materials to devices, especially, blue phase liquid crystal (BPLC) and nano-structured liquid crystal mixture have been studied recently because BPs existing temperature range has been expanded by polymer-stabilization and liquid crystal has been confined in room which has certain coherence length so that their particular characters, such as fast response time and optically isotropic state at no electric field, could apply to advanced liquid crystal display devices. However, there is an crucial problem which is high operating voltage from low Kerr constant and limited electric field utilization using in-plain electric field. In this paper, we will analyze cell structure in the way of using electric field and show effective electric field utilization to reduce operating voltage.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2005년도 동계학술연구발표회 및 2차 아시안포럼
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• pp.123-123
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• 2005

• Macromolecular Research
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• 제16권6호
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• pp.570-573
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• 2008

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• 한국정밀공학회지
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• 제33권1호
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• pp.11-16
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• 2016

Lithography techniques are generally used to manufacture nano-patterns on silicon, however, it is difficult to make a V-shaped pattern using these techniques. Although silicon is a brittle material, it can be treated as a ductile material if mechanically machined at extremely low force scale. The manufacturing technique of nano-patterns on single crystal silicon using a mechanical method was developed in this study. First, the linear pattern was machined on the silicon with increasing thrust force. Then, the correlation between measured cutting force and machined pattern was analyzed. Based on the analysis, the critical thrust force was quantitatively determined, and then the silicon was machined at a force lower than the critical thrust force. The machined pattern was observed using SEM and AFM to check for the occurrence of brittle fractures. Finally, the sharp V-shaped nano-pattern was manufactured on the single crystal silicon.

• 산업경영시스템학회지
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• 제40권4호
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• pp.237-245
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• 2017

Our research is aimed at predicting recent trend and leading technology for the future and providing optimal Nano technology trend information by analyzing Nano technology trend. Under recent global market situation, Users' needs and the technology to meet these needs are changing in real time. At this point, Nano technology also needs measures to reduce cost and enhance efficiency in order not to fall behind the times. Therefore, research like trend analysis which uses search data to satisfy both aspects is required. This research consists of four steps. We collect data and select keywords in step 1, detect trends based on frequency and create visualization in step 2, and perform analysis using data mining in step 3. This research can be used to look for changes of trend from three perspectives. This research conducted analysis on changes of trend in terms of major classification, Nano technology of 30's, and key words which consist of relevant Nano technology. Second, it is possible to provide real-time information. Trend analysis using search data can provide information depending on the continuously changing market situation due to the real-time information which search data includes. Third, through comparative analysis it is possible to establish a useful corporate policy and strategy by apprehending the trend of the United States which has relatively advanced Nano technology. Therefore, trend analysis using search data like this research can suggest proper direction of policy which respond to market change in a real time, can be used as reference material, and can help reduce cost.

• Journal of Pharmaceutical Investigation
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• 제41권3호
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• pp.179-184
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• 2011

This study aimed to confirm the effect of molecular weight (MW) in solid dispersion of carvedilol with poly-vinylpyrrolidone (PVP) of various MW. Solid dispersion of carvedilol with PVP was prepared by spray-drying method. Scanning electron microscopy (SEM) was used to analyze the surface of solid dispersion samples. Differential scanning calorimetry (DSC) and X-ray diffraction (XRD) were used to analyze the crystalline of solid dispersion. Fourier transform infrared spectroscopy (FT-IR) was used to analyze the change of chemical structure characteristic of solid dispersion. DSC and XRD show that drug crystalline was changed. FT-IR revealed that chemical structure of solid dispersion comparing the chemical structure of drug was changed. The dissolution studies of solid dispersion presented at simulated gastric juice (pH 1.2). The dissolution rate of solid dispersion was dramatically enhanced than pure drug and the MW of PVP has an effect on the release property of carvedilol in solid dispersion. In conclusion, the present study has confirmed the effect of MW of PVP on release property of solid dispersion formulation of carvedilol with PVP.

• 한국재료학회지
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• 제19권3호
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• pp.132-136
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• 2009

This study investigates GaAs dry etching in capacitively coupled $BCl_3/N_2$ plasma at a low vacuum pressure (>100 mTorr). The applied etch process parameters were a RIE chuck power ranging from $100{\sim}200W$ on the electrodes and a $N_2$ composition ranging from $0{\sim}100%$ in $BCl_3/N_2$ plasma mixtures. After the etch process, the etch rates, RMS roughness and etch selectivity of the GaAs over a photoresist was investigated. Surface profilometry and field emission-scanning electron microscopy were used to analyze the etch characteristics of the GaAs substrate. It was found that the highest etch rate of GaAs was $0.4{\mu}m/min$ at a 20 % $N_2$ composition in $BCl_3/N_2$ (i.e., 16 sccm $BCl_3/4$ sccm $N_2$). It was also noted that the etch rate of GaAs was $0.22{\mu}m/min$ at 20 sccm $BCl_3$ (100 % $BCl_3$). Therefore, there was a clear catalytic effect of $N_2$ during the $BCl_3/N_2$ plasma etching process. The RMS roughness of GaAs after etching was very low (${\sim}3nm$) when the percentage of $N_2$ was 20 %. However, the surface roughness became rougher with higher percentages of $N_2$.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.154.2-154.2
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• 2007