• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.86-86
• /
• 2012

The new approaches for silicon solar cell of new concept have been actively conducted. Especially, solar cells with wire array structured radial p-n junctions has attracted considerable attention due to the unique advantages of orthogonalizing the direction of light absorption and charge separation while allowing for improved light scattering and trapping. One-dimenstional semiconductor nano/micro structures should be fabricated for radial p-n junction solar cell. Most of silicon wire and/or pillar arrays have been fabricated by vapour-liquid-solid (VLS) growth because of its simple and cheap process. In the case of the VLS method has some weak points, that is, the incorporation of heavy metal catalysts into the growing silicon wire, the high temperature procedure. We have tried new approaches; one is electrochemical etching, the other is noble metal catalytic etching method to overcome those problems. In this talk, the silicon pillar formation will be characterized by investigating the parameters of the electrochemical etching process such as HF concentration ratio of electrolyte, current density, back contact material, temperature of the solution, and large pre-pattern size and pitch. In the noble metal catalytic etching processes, the effect of solution composition and thickness of metal catalyst on the etching rate and morphologies of silicon was investigated. Finally, radial p-n junction wire arrays were fabricated by spin on doping (phosphor), starting from chemical etched p-Si wire arrays. In/Ga eutectic metal was used for contact metal. The energy conversion efficiency of radial p-n junction solar cell is discussed.

• Carbon letters
• /
• v.4 no.1
• /
• pp.1-9
• /
• 2003

Recently, the control of pore-characteristics of nano-porous materials has been studied extensively because of their unique applications, which includes size-selective separation, gas adsorption/storage, heterogeneous catalysis, etc. The most widely adopted techniques for controlling pore characteristics include the utilization of pillar effect by metal oxide and of templates such as zeolites. More recently, coordination polymers constructed by transition metal ions and bridging organic ligands have afforded new types of nano-porous materials, porous metal-organic framework(porous MOF), with high degree and uniformity of porosity. The pore characteristics of these porous MOFs can be designed by controlling the coordination number and geometry of selected metal, e.g transition metal and rare-earth metal, and the size, rigidity, and coordination site of ligand. The synthesis of porous MOF by the assembly of metal ions with di-, tri-, and poly-topic N-bound organic linkers such as 4,4'-bipyridine(BPY) or multidentate linkers such as carboxylates, which allow for the formation of more rigid frameworks due to their ability to aggregate metal ions into M-O-C cluster, have been reported. Other porous MOF from co-ligand system or the ligand with both C-O and C-N type linkage can afford to control the shape and size of pores. Furthermore, for the rigidity and thermal stability of porous MOF, ring-type ligand such as porphyrin derivatives and ligands with ability of secondary bonding such as hydrogen and ionic bonding have been studied.

• Journal of the Microelectronics and Packaging Society
• /
• v.21 no.3
• /
• pp.67-71
• /
• 2014

An attempt to grow high quality GaN on silicon substrate using metal organic chemical vapor deposition (MOCVD), herein GaN epitaxial layers were grown on various Si(111) substrates. Thin Platinum layer was deposited on Si(111) substrate using sputtering, followed by thermal annealing to form Pt nano-clusters which act as masking layer during dry-etched with inductively coupled plasma-reactive ion etching to generate nano-patterned Si(111) substrate. In addition, micro-patterned Si(111) substrate with circle shape was also fabricated by using conventional photo-lithography technique. GaN epitaxial layers were subsequently grown on micro-, nano-patterned and conventional Si (111) substrate under identical growth conditions for comparison. The GaN layer grown on nano-patterned Si (111) substrate shows the lowest crack density with mirror-like surface morphology. The FWHM values of XRD rocking curve measured from symmetry (002) and asymmetry (102) planes are 576 arcsec and 828 arcsec, respectively. To corroborate an enhancement of the growth quality, the FWHM value achieved from the photoluminescence spectra also shows the lowest value (46.5 meV) as compare to other grown samples.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.413-413
• /
• 2014

In this paper, we present a fabrication method of functionalized gold nanostructures on flexible substrate that can be implemented for plasmonic sensing application. For biomolecular sensing, many researchers exploit unconventional lithography method like nanoimprint lithography (NIP), contact transfer lithography, soft lithography, colloidal transfer printing due to its usability and easy to functionalization. In particular, nanoimprint and contact transfer lithography need to have anti-adhesion layer for distinctive metallic properties on the flexible substrates. However, when metallic thin film was deposited on the anti-adhesion layer coated substrates, we discover much aggravation of the mold by repetitive use. Thus it would be impossible to get a high quality of metal nanostructure on the transferred substrate for developing flexible electronics based transfer printing. Here we demonstrate a method for nano-pillar mold and transfer the controllable nanoparticle array on the flexible substrates without an anti-adhesion layer. Also functionalization of gold was investigated by the different length of thiol applied for effectively localized surface plasmonic resonance sensing. First, a focused ion beam (FIB) and ICP-RIE are used to fabricate the nanoscale pillar array. Then gold metal layer is deposited onto the patterned nanostructure. The metallic 130 nm and 250 nm nanodisk pattern are transferred onto flexible polymer substrate by bi-layer functionalized contact imprinting which can be tunable surface energy interfaces. Different thiol reagents such as Thioglycolic acid (98%), 3-Mercaptopropionic acid (99%), 11-Mercaptoundecanoic acid (95%) and 16-Mercaptohexadecanoic acid (90%) are used. Overcoming the repeatedly usage of the anti-adhesion layer mold which has less uniformity and not washable interface, contact printing method using bi-layer gold array are not only expedient access to fabrication but also have distinctive properties including anti-adhesion layer free, functionalized bottom of the gold nano disk, repeatedly replicate the pattern on the flexible substrate. As a result we demonstrate the feasibility of flexible plasmonic sensing interface and anticipate that the method can be extended to variable application including the portable bio sensor via mass production of stable nanostructure array and other nanophotonic application.

• Journal of Technologic Dentistry
• /
• v.34 no.2
• /
• pp.75-81
• /
• 2012

Purpose: All ceramic crown, made from zirconia instead of metal for core material, is recognized the best esthetical prosthesis. Recently, high-priced zirconia blocks and expensive CAD/CAM machines come into use for making zirconia core. In this study, slip casting process is adapted to evaluate the possibility of the recycling the remained parts of zirconia block after machining. Methods: Remained zirconia blocks were reduced to powders with zirconia mortar, and screened with 180 mesh sieve. Passed powders were ball milled under various conditions to obtain the optimum zirconia slip for casting. Solid casting method was used for casting the specimens with plaster mold. Formed specimens were dried and biscuit fired at $1,000^{\circ}C$ for 1 hour. Biscuit fired specimens were finished with exact shape of square pillar. Finished specimens were fired from $1,200^{\circ}C$ to $1,550^{\circ}C$ at $50^{\circ}C$ intervals for 1 hour. Linear shrinkage, apparent porosity, water absorption, bulk density, and flexural strength were tested. Microstructures were observed by SEM. Results: Above examinations indicated that the optimum firing temperture was $1,500^{\circ}C$, and when fired at this temperature for 1 hour, apparent porosity was 0% and flexural strength was 680MPa. SEM photomicrographs showed uniform 200~300nm grain size, which is equal with microcture of sintered commercial zirconia block. when compare 24% linear shrinkage of cast specimen with 20% linear shrinkage of CAD/CAM machined block, it was estimated that the size controlling of cast core was not so difficult. Conclusion: According to the all of this experimental results, the cast zirconia core produced from the remained parts of zirconia block was possible to use for all ceramic denture.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.320-320
• /
• 2011

We describe fabrication of superhydrophobic surface on non-woven fabric (NWF) having nano-hairy structures and a hydrophobic surface coating. Oxygen plasma was irradiated on NWF for nano-texuring and a precursor of HMDSO (Hexamethydisiloxane) was introduced as a surface chemical modification for obtaining superhydrophobicity using 13.56 MHz radio frequency-Plasma Enhanced Chemical Vapor Deposition (rf-PECVD). O2 plasma treatment time was varied from 1 min to 60 min at a bias voltage of 400V, which fabricated pillar-like structures with diameter of 30 nm and height of 150 nm on NWF. Subsequently, hydrophobic coating using hexamethyldisiloxane vapor was deposited with 10 nm thickness on NWF substrate at a bias voltage of 400 V. We evaluate superhydrophobicity of the modified NWF with sessile drop using goniometer and high speed camera, in which aspect ratio of nanohairy structures, contact angle and contact angle hysteresis of the surfaces were measured. With the increase of aspect ratio, the wetting angle increased from $103^{\circ}$ to $163^{\circ}$, and the contact angle hysteresis decreased dramatically below $5^{\circ}$. In addition, we had conducted experiment for nucleation and condensation of water via E-SEM. During increasing vapor pressure inside E-SEM from 3.7 Torr to over 6 Torr which is beyond saturation point at $2^{\circ}C$, we observed condensation of water droplet on the superhydropobic NWF. While the condensation of water on oxygen plasma treated NWF (superhydrophilic) occurred easily and rapidly, superhydrophobic NWF which was fabricated by oxygen and HMDSO was hardly wet even under supersaturation condition. From the result of wetting experiment and water condensation via E-SEM, it is confirmed that superhydrophobic NWF shows the grate water repellent abilities.

• Journal of the Microelectronics and Packaging Society
• /
• v.27 no.1
• /
• pp.17-24
• /
• 2020

As an interconnect scaling faces a technical bottleneck, the device stacking technologies have been developed for miniaturization, low cost and high performance. To manufacture a stacked device structure, a vertical interconnect becomes a key process to enable signal and power integrities. Most bonding materials used in stacked structures are currently solder or Cu pillar with Sn cap, but copper is emerging as the most important bonding material due to fine-pitch patternability and high electrical performance. Copper bonding has advantages such as CMOS compatible process, high electrical and thermal conductivities, and excellent mechanical integrity, but it has major disadvantages of high bonding temperature, quick oxidation, and planarization requirement. There are many copper bonding processes such as dielectric bonding, copper direct bonding, copper-oxide hybrid bonding, copper-polymer hybrid bonding, etc.. As copper bonding evolves, copper-oxide hybrid bonding is considered as the most promising bonding process for vertically stacked device structure. This paper reviews current research trends of copper bonding focusing on the key process of Cu-SiO₂ hybrid bonding.

• Journal of the Korean Society of Manufacturing Technology Engineers
• /
• v.24 no.1
• /
• pp.38-42
• /
• 2015

Polydimethylsiloxane (PDMS) is a widely used material for replicating micro-structures because of its transparency, deformability, and easy fabrication. At the nanoscale, however, it is hard to fill a nanohole template with uncured PDMS. This paper introduces several simple methods by changing the surface energy of a nanohole template and PDMS elastomer for replicating 100nm-scale structures. In the case of template, pristine anodic aluminum oxide (AAO), hydrophobically treated AAO, and hydrophillically treated AAO are used. For the surface energy change of the PDMS elastomer, a hydrophilic additive and dilution solvent are added in the PDMS prepolymer. During the molding process, a simple casting method is used for all combinations of the treated template and modified PDMS. The nanostructured PDMS surface was investigated with a scanning electron microscope after the molding process for verification.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.241-241
• /
• 2008

Macrofore formation in silicon and other semiconductors using electrochemical etching processes has been, in the last years, a subject of great attention of both theory and practice. Its first reason of concern is new areas of macropore silicone applications arising from microelectromechanical systems processing (MEMS), membrane techniques, solar cells, sensors, photonic crystals, and new technologies like a silicon-on-nothing (SON) technology. Its formation mechanism with a rich variety of controllable microstructures and their many potential applications have been studied extensively recently. Porous silicon is formed by anodic etching of crystalline silicon in hydrofluoric acid. During the etching process holes are required to enable the dissolution of the silicon anode. For p-type silicon, holes are the majority charge carriers, therefore porous silicon can be formed under the action of a positive bias on the silicon anode. For n-type silicon, holes to dissolve silicon is supplied by illuminating n-type silicon with above-band-gap light which allows sufficient generation of holes. To make a desired three-dimensional nano- or micro-structures, pre-structuring the masked surface in KOH solution to form a periodic array of etch pits before electrochemical etching. Due to enhanced electric field, the holes are efficiently collected at the pore tips for etching. The depletion of holes in the space charge region prevents silicon dissolution at the sidewalls, enabling anisotropic etching for the trenches. This is correct theoretical explanation for n-type Si etching. However, there are a few experimental repors in p-type silicon, while a number of theoretical models have been worked out to explain experimental dependence observed. To perform ordered macrofore formaion for p-type silicon, various kinds of mask patterns to make initial KOH etch pits were used. In order to understand the roles played by the kinds of etching solution in the formation of pillar arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, N-dimethylformamide (DMF), iso-propanol, and mixtures of HF with water on the macrofore structure formation on monocrystalline p-type silicon with a resistivity varying between 10 ~ 0.01 $\Omega$ cm. The etching solution including the iso-propanol produced a best three dimensional pillar structures. The experimental results are discussed on the base of Lehmann's comprehensive model based on SCR width.