• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.28 no.8 s.227
• /
• pp.976-983
• /
• 2004

In high-density hard disk drives, the slider should be made to fly close to the magnetic recording disk to generate better signal resolution and at an increasingly high velocity to achieve better data rate. The slider disk interaction in CSS (contact-start-stop) mode is an important source of particle generation. Contamination particles in the hard disk drive can cause serious problems including slider crash and thermal asperities. We investigated the number and the sizes of particles generated in the hard disk drive, operating at increasing disk rotational speeds, in the CSS mode. CNC (condensation nucleus counter) and PSS (particle size selector) were used for this investigation. In addition, we examined the particle components by using SEM (scanning electron microscopes), AES (auger electron spectroscopy), and TOF-SIMS (time of flight-secondary ions mass spectrometry). The increasing disk rotational speed directly affected the particle generation by slider disk interaction. The number of particles that were generated increased with the disk rotational speed. The particle generation rate increased rapidly at motor speeds above 8000 rpm. This increase may be due to the increased slider disk interaction. Particle sizes ranged from 14 to 200 nm. The particles generated by slider disk interaction came from the lubricant on the disk, coating layer of the disk, and also slider surface.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.314.2-314.2
• /
• 2014

To improve the optical and electrical properties of commercialized GaN-based light-emitting diodes (LEDs), many methods are suggested. In recent years, great efforts have been made to improve the internal quantum efficiency and light extraction efficiency (LEE) and promising approaches are suggested using a patterned sapphire substrate (PSS), V-pit embedded LED structures, and silica nanostructures. In this study, we report on the enhancement of photoluminescence (PL) intensity in GaN-based LED structures by using the combination of SiO2 (silica) nanospheres and polystyrene/SiO2 core-shell nanospheres. The SiO2 nanospheres-coated LED structure shows the slightly increased PL intensity. Moreover the polystyrene/SiO2 core-shell nanospheres-coated structure shows the more increase of PL intensity comparing to that of only SiO2 spheres-coated structure and the conventional structure without coating of nanospheres. The Finite-difference time-domain (FDTD) simulation results show corresponding result with experimentally observed results. The mechanism of enhancement of PL intensity using the coating of polystyrene/SiO2 core-shell nanospheres on LED surface can be explained by the improvement in extraction efficiency by both increasing the probability of light escape by reducing Fresnel reflection and by multiple scattering within the core-shell nanospheres.

• Korean Journal of Materials Research
• /
• v.17 no.9
• /
• pp.469-474
• /
• 2007

Electroless deposition(ELD) was applied to fabricate Cu interconnections on a TaN diffusion barrier with Pd seed layer. The Pd seed layer was obtained by self-assembled monolayer method(SAM) with PDDA and PSS as surfactants. We were able to obtain about 10nm Pd nano particles as seeds for electroless Cu deposition and the density of Pd seeds was much higher than that of Pd seeds fabricated by conventional Pd sensitization-activation method. Also we were able to obtain finer Cu interconnections by ELD. Therefore we concluded that the Pd seed layer by SAM was able to be applied to form Cu interconnection by ELD for under 30nm feature.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.29 no.3
• /
• pp.83-90
• /
• 2019

In this paper, Mg-doped AlN epilayers for power semiconductor devices are grown by mixed-source hydride vapor phase epitaxy. Magnesium is used as p-type dopant material in the grown AlN epilayer. The AlN epilayers on the GaN-templated sapphire substrate and GaN-templated-patterned sapphire substrate (PSS), respectively, as the base substrates for device application, were selectively grown. The surface and the crystal structures of the AlN epilayers were investigated by field emission scanning electron microscopy (FE-SEM) and high-resolution-X-ray diffraction (HR-XRD). From the X-ray photoelectron spectroscopy (XPS) and Raman spectra results, the p-type AlN epilayers grown by using the mixed-source HVPE method could be applied to power devices.