• 열처리공학회지
• /
• 제24권6호
• /
• pp.318-326
• /
• 2011

This study has been performed to investigate the effect of Al addition on High Temperature Gas Nitriding (HTGN) in 13%Cr-0.16%C stainless steel with different Al contents of 0.54%, 1.76% and 2.36%, respectively. HTGN treatment was carried out at $1100^{\circ}C$ for 1 hr, 5 hrs and 10 hrs. Nitrogen-permeated surface layers showed round type carbides of $Cr_{23}C_6$ and needle type nitrides of AlN in the matrix of martensite, representing 600~700 Hv. And the thickness of the surface layer increased with increasing Al content and HTGN treatment time. The inner region that was not permeated nitrogen showed chromium carbides in the mixed phase of martensite and ferrite for the 0.53% Al alloyed steel, however chromium carbides in the matrix of ferrite single phase were shown for the steels with the addition of 1.76%Al and 2.36%Al, representing the hardness of ~200 Hv. During nitrogen permeation from surface to the interior, substitutional elements of Cr, Al and Si moved toward the surface and interstitial element of carbon also moved from interior to the surface. This movement of alloying elements leads high concentration of these elements at the outmost surface, subsequently the lowest peak of substitutional elements were shown in the vicinity of near surface. After showing the lowest peak, the high concentration region of Al and C were formed due to the continuous movement of Al toward the surface. The long discontinuous precipitates of $Cr_{23}C_6$ and AlN were formed along the outmost surface owing to the high concentration of these alloying elements.

• 한국전기전자재료학회논문지
• /
• 제37권1호
• /
• pp.88-93
• /
• 2024

To evaluate the possibility as a multi-level memory medium for the Ge₂Sb₂Te₅/TiN/W-doped Ge₂Sb₂Te₅ cell structure, the crystallization rate and stabilization characteristics according to voltage (V)- and current (I)- pulse sweeping were investigated. In the cell structures prepared by a magnetron sputtering system on a p-type Si (100) substrate, the Ge₂Sb₂Te₅ and W-doped Ge₂Sb₂Te₅ thin films were separated by a barrier metal, TiN, and the individual thicknesses were varied, but the total thickness was fixed at 200 nm. All cell structures exhibited relatively stable multi-level states of high-middle-low resistance (HR-MR-LR), which guarantee the reliability of the multilevel phase-change random access memory (PRAM). The amorphousto-multilevel crystallization rate was evaluated from a graph of resistance (R) vs. pulse duration (T) obtained by the nanoscaled pulse sweeping at a fixed applied voltage (12 V). For all structures, the phase-change rates of HR→MR and MR→LR were estimated to be approximately t<20 ns and t<40 ns, respectively, and the states were relatively stable. We believe that the doublestack structure of an appropriate Ge-Sb-Te film separated by barrier metal (TiN) can be optimized for high-speed and stable multilevel PRAM.

• 한국지하수토양환경학회:학술대회논문집
• /
• 한국지하수토양환경학회 2004년도 임시총회 및 추계학술발표회
• /
• pp.119-120
• /
• 2004

Urban groundwater has a unique hydrologic system because of the complex surface and subsurface infrastructures such as deep foundation of many high buildings, subway systems, and sewers and public water supply systems. It generally has been considered that increased surface impermeability reduces the amount of groundwater recharge. On the other hand, leaks from sewers and public water supply systems may generate the large amounts of recharges. All of these urban facilities also may change the groundwater quality by the recharge of a myriad of contaminants. This study was performed to determine the factors controlling the recharge of deep groundwater in an urban area, based on the hydrogeochemical characteristics. The term ‘contamination’ in this study means any kind of inflow of shallow groundwater regardless of clean or contaminated. For this study, urban groundwater samples were collected from a total of 310 preexisting wells with the depth over 100 m. Random sampling method was used to select the wells for this study. Major cations together with Si, Al, Fe, Pb, Hg and Mn were analyzed by ICP-AES, and Cl, N $O_3$, N $H_4$, F, Br, S $O_4$and P $O_4$ were analyzed by IC. There are two groups of groundwater, based on hydrochemical characteristics. The first group is distributed broadly from Ca-HC $O_3$ type to Ca-C1+N $O_3$ type; the other group is the Na+K-HC $O_3$ type. The latter group is considered to represent the baseline quality of deep groundwater in the study area. Using the major ions data for the Na+K-HC $O_3$ type water, we evaluated the extent of groundwater contamination, assuming that if subtract the baseline composition from acquired data for a specific water, the remaining concentrations may indicate the degree of contamination. The remainder of each solute for each sample was simply averaged. The results showed that both Ca and HC $O_3$ represent the typical solutes which are quite enriched in urban groundwater. In particular, the P$CO_2$ values calculated using PHREEQC (version 2.8) showed a correlation with the concentrations of maior inorganic components (Na, Mg, Ca, N $O_3$, S $O_4$, etc.). The p$CO_2$ values for the first group waters widely ranged between about 10$^{-3.0}$ atm to 10$^{-1.0}$ atm and differed from those of the background water samples belonging to the Na+K-HC $O_3$ type (<10$^{-3.5}$ atm). Considering that the p$CO_2$ of soil water (near 10$^{-1.5}$ atm), this indicates that inflow of shallow water is very significant in deep groundwaters in the study area. Furthermore, the P$CO_2$ values can be used as an effective parameter to estimate the relative recharge of shallow water and thus the contamination susceptibility. The results of our present study suggest that down to considerable depth, urban groundwater in crystalline aquifer may be considerably affected by the recharge of shallow water (and pollutants) from an adjacent area. We also suggest that for such evaluation, careful examination of systematically collected hydrochemical data is requisite as an effective tool, in addition to hydrologic and hydrogeologic interpretation.ion.ion.

• Archives of Plastic Surgery
• /
• 제43권1호
• /
• pp.66-70
• /
• 2016

Background In this study, we characterize the morbidity at the donor-site of partial second toe pulp free flaps in terms of wound management as well as long-term outcomes. Methods A single-institutional retrospective review was performed for patients who had undergone partial second toe pulp free flap transfer to the fingertip. Patient charts were reviewed for infection, skin necrosis, wound dehiscence, and hematoma for the donor site. Additionally, a questionnaire survey was given to patients who had a follow-up of longer than 1 year to characterize long-term postoperative pain and appearance. Results The review identified a total of 246 cases. Early wound complications were significant for wound dehiscence (n=8) and hematoma (n=5) for a wound complication rate of 5.3%. The questionnaire was distributed to 109 patients, and 54 patients completed the survey. Out of these 54 patients, 15 patients continued to have donor-site pain (28%) at a mean follow-up period of 32.4 months. However, the pain intensity was relatively low in the range between 2 to 5, on a 0-10 scale. None of these patients felt this donor-site pain interfered significantly with daily activity, nor did any patient require pain medications of any type. Donor-site appearance was satisfactory to most patients. Conclusions The partial second toe pulp flap was associated with low rates of wound complications and favorable long-term outcomes. Given the functional and aesthetic gain in the recipient finger, donor-site morbidities appear acceptable in this patient population. This study can be helpful in counseling patients regarding donor-site morbidity during the informed consent process.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
• /
• pp.112.1-112.1
• /
• 2011

The back contact solar cell (BCSC) has several advantages compared to the conventional solar cell since it can reduce grid shadowing loss and contact resistance between the electrode and the silicon substrate. This paper presents the effect of the surface texturing of the silicon BCSC by varying the texturing depth or the texturing gap in the commercially available simulation software, ATHENA and ATLAS of the company SILVACO. The texturing depth was varied from $5{\mu}m$ to $150{\mu}m$ and the texturing gap was varied from $1{\mu}m$ to $100{\mu}m$ in the simulation. The resulting efficiency of the silicon BCSC was evaluated depending on the texturing condition. The quantum efficiency and the I-V curve of the designed silicon BCSC was also obtained for the analysis since they are closely related with the solar cell efficiency. Other parameters of the simulated silicon BCSC are as follows. The substrate was an n-type silicon, which was doped with phosphorous at $6{\times}10^{15}cm^{-3}$, and its thickness was $180{\mu}m$, a typical thickness of commercial solar cell substrate thickness. The back surface field (BSF) was $1{\times}10^{20}\;cm^{-3}$ and the doping concentration of a boron doped emitter was $8.5{\times}10^{19}\;cm^{-3}$. The pitch of the silicon BCSC was $1250{\mu}m$ and the anti-reflection coating (ARC) SiN thickness was $0.079{\mu}m$. It was assumed that the texturing was anisotropic etching of crystalline silicon, resulting in texturing angle of 54.7 degrees. The best efficiency was 25.6264% when texturing depth was $50{\mu}m$ with zero texturing gap in case of low texturing depth (< $100{\mu}m$).

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2002년도 춘계학술발표회 초록집
• /
• pp.12-12
• /
• 2002

hexagonal Boron Nitride (hBN), rhombohedral Boron Nitride (rBN)과 고밀도의 wurzitic Boron N Nitride (wBN), cubic Boron Nitride (cBN) 등의 다양한 상을 갖는 Boron nitride는 그 결정구조에 따라 저밀도, 고밀도 박막으로 분류되며 이중 hBN과 rBN은 층간 결합이 약한 $sp^2$ 결합특성을 가지고, wBN 과 cBN은 강한 $sp^3$ 결합특성을 가지고 있다. 현재까지 $sp^3$결합을 갖는 BN의 우수한 특성을 응용하기 위한 수 많은 연구들이 있어왔다. 특히 cBN은 다이아몬드에 버금가는 높은 경도뿐만 아니라 높은 화 학적 안정성 및 열전도성 등 우수한 물리화학적 특성을 가지고 있어 마찰.마모, 전자, 광학 등의 여러 분야에서의 산업적 응용이 크게 기대되고 있다. 그러나 이와 같이 BN박막의 기계적 물성과 관련한 연 구는 많이 진행되어 왔으나 전기.전자적, 광학적 특성에 관한 연구는 미비한 실정이다. 따라서 본 연구에서는 BN박막의 또 다른 웅용 분야를 탐색하고자 ME - ARE (Magnetically Enhanced A Activated Reactive Evaporation)법 에 의 해 합성 된 BN박막의 광학적 특성 에 관하여 조사하였다. BN박 막합성 은 전자총에 의 해 증발된 보론과 질소.아르곤 플라즈마의 활성 화반응증착(Activated Reactive E Evaporation)에 의해 이루어졌다. 기존의 ARE장치와 달리 열음극(hot cathode)과 양극(anode)사이에 평 행자기장을 부가하여 플라즈마의 증대시켜 반웅효율을 높였다. 합성실험용 모재로는 기본적인 특성 분 석을 위해 p-type으로 도핑된 (100) Si웨이퍼를 $30{\times}40mm$크기로 절단 후, 10%로 희석된 완충불산용액 에 10분간 침적하여 표면의 산화층을 제거한 후 사용하였으며, 광학특성 분석을 위해 $30{\times}30mm$의 glass를 아세톤으로 탈지.세척한 후 사용하였다. 박막합성실험에서 BN의 광학적 특성에 미치는 공정변수의 영향을 파악하기 위하여, 기판바이어스 전압, discharge 전류, $Ar/N_2$가스 유량비 등을 달리하여 증착하였다. 증착된 박막은 FTIR 분석을 통하 여 결정성을 확인하였으며, AFM 분석을 통하여 코팅층의 두께를 측정하였고, UV - VIS spectormeter를 이용하여 투광특성을 평가하였다.

• Korean Chemical Engineering Research
• /
• 제46권3호
• /
• pp.492-497
• /
• 2008

기-액 흡수 평형장치에서 이온성액체와 아민수용액의 이산화탄소 흡수특성을 평가하였다. 9가지의 이온성액체와 두 종류의 아민수용액의 이산화탄소 압력에 따른 흡수특성과 시간에 따른 흡수속도를 측정하였다. 이온성액체의 양이온과 음이온을 변화시켜 이산화탄소흡수에대한 이온의 영향을 알아보았다. 아민수용액은 이온성액체보다 높은 이산화탄소 흡수능과 빠른 흡수속도를 보였다. 이온성액체 중에서는 1 bar에서 $0.14molCO_2/molIL$의 흡수능을 보인 [emim][$Tf_2N$]이 가장 우수한 효율을 보였다. 흡수반응온도가 증가할 수 록 이산화탄소 흡수능은 급격한 감소를 보였다. 이산화탄소 흡수에는 이온성액체의 음이온이 주된 역할을 수행하며 양이온은 부가적인 역할을 수행하는 것으로 판단된다.

• Archives of Plastic Surgery
• /
• 제40권6호
• /
• pp.773-778
• /
• 2013

Background In the management of mallet deformities, oblique retinacular ligament (ORL) reconstruction provides a mechanism for automatic distal interphalangeal (DIP) joint extension upon active proximal interphalangeal joint extension. The two variants of ORL reconstruction utilize either the lateral band or a free tendon graft. This study aims to compare these two surgical techniques and to assess any differences in functional outcome. As a secondary measure, the Mitek bone anchor and pull-in suture methods are compared. Methods A single-institutional retrospective review of ORL reconstruction was performed. The standard patient demographics, injury mechanism, type of ORL reconstruction, and pre/postoperative degree of extension lag were collected for the 27 cases identified. The cases were divided into lateral band (group A, n=15) and free tendon graft groups (group B, n=12). Group B was subdivided into the pull-in suture technique (B-I) and the Mitek bone anchor method (B-II). Results Overall, ORL reconstructions had improved the mean DIP extension lag by $10^{\circ}$ (P=0.027). Neither the reconstructive technique choice nor bone fixation method identified any statistically meaningful difference in functional outcome (P=0.51 and P=0.83, respectively). Soft-tissue injury was associated with $30.8^{\circ}$ of improvement in the extension lag. The most common complications were tendon adhesion and rupture. Conclusions The choice of the ORL reconstructive technique or the bone anchor method did not influence the primary functional outcome of extension lag in this study. Both lateral band and free tendon graft ORL reconstructions are valid treatment methods in the management of chronic mallet deformity.

• 한국전자통신학회논문지
• /
• 제9권5호
• /
• pp.555-560
• /
• 2014

본 논문에서 850nm~1000nm 파장대역에서 레이저를 검출하기 위한 고감도 실리콘 포토다이오드를 제조하고 전기적 및 광학적 특성을 분석하였다. 소자의 크기는 $5000{\mu}m{\times}2000{\mu}m$이며 두께는 $280{\mu}m$로 제조하여 TO-5 형태로 패키징 하였다. 전기적 특성으로 암전류는 5V 역 전압 일 때 0.1nA의 값을 나타내었으며 정전용량은 0V일 때 1kHz 주파수 대역에서 32.5pF와 200kHz 주파수 대역에서 32.4pF로 적은 정전용량의 값을 나타내었다. 또한 출력신호의 상승시간은 10V의 전압일 때 20.92ns로 고속 응답특성을 확인하였다. 광학적 특성으로는 890nm에서 최대 0.57A/W의 분광감응도를 나타내었고 1000nm에서는 0.37A/W로 감소한 분광감응도를 나타내고 있지만 870nm~920nm 파장대역에서는 비교적 우수한 분광감응도를 나타내었다.

• Annals of Surgical Treatment and Research
• /
• 제95권5호
• /
• pp.267-277
• /
• 2018

Purpose: The aim of this study was to analyze survival outcomes in 1,000 consecutive liver transplantations (LTs) performed at a single institution from 1993 to April 2017. Methods: The study population was divided into 2 groups based on donor type: deceased donor LT (DDLT; n = 181, 18.1%) and living donor LT (LDLT; n = 819; 81.9%), and into 3 periods based on the number of cases (first 300 cases, middle 300 cases, last 400 cases). Results: Infection was the most common cause of death, accounting for 34.8% (95 of 273). Mortality due to hepatocellular carcinoma recurrence occurred most frequently between 1 and 5 years after transplantation. Mortality rate by graft rejection was highest between 5 and 10 years after transplantation. And mortality by de novo malignancy occurred most frequently after 10 years after transplantation. The patient survival rates for the entire population at 5 and 10 years were 74.7%, and 68.6%, respectively. There was no difference in survival rate between the LDLT and DDLT groups (P = 0.188). Cause of disease, disease severity, case period, and retransplantation had a significant association with patient survival (P = 0.002, P = 0.031, P = 0.003, and P = 0.024, respectively). Conclusion: Surgical techniques and perioperative management for transplant patients have improved and undergone standardization. Controlling perioperative infection and managing patients with HCC as LT candidates will result in better outcomes.