• Korean Journal of Veterinary Research
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• v.30 no.3
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• pp.317-331
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• 1990

Chromosomes of gonadal tissues from Fasciola spp, Eurytrema pancreaticum and Calicophoron calicophorum occurred Korean cattle were egamined using modified air-drying method. To compare their phenotype with three different genotypes among Fasciola spp, the adult and egg si2e were measured since they have been known as important taxonomical characters. The results obtained were as followed; Cattle liver fluke, Fasciola spp were classified into three types based on their chromosomal complements such as individual with 2o chromosome(diploid), 30 chromosome(triploid) and 20/30 mosaic constitution(mixoploid). The propotions of appearance of three types were 40.00%, 54.29% and 5.71%, respectively. The frequency of three types in type I which was regarded as F gigantica were 58.82% for diploid, 35.29% for triploid and 5.88% for mixoploid, but in type II which was regarded as F hepatica were 72.2% for triploid, 22.22% for diploid and 5.56% for mixoploid. Egg length of triploid forms was significantly larger than that of diploid forms and egg size of mixoploid forms was similiar to that of triploid forms. Worm size of triploid forms was larger than that of diploid forms and was more similar to that of mixoploid forms, but the statistical data were not significant. Diploid chromosome consisted of one pair of metacentric chromosome(m), four pairs of submetacentric chromosomes(sm), five pairs of subtelocentric chromosomes(st), while triploid chromosome consisted of one pair of metacentric chromosome, seven pairs of submetacen.tric chromosomes, one pair of subtelocentric chromosome and telocentric chromosome(t), respectively. In mixoploid chromosome, constitution of the chromosomes of diploid or triploid cell was consistent with that of diploid or triploid. Chromosomes of gonadal tissues from pancreatic fluke, Eurytrema pancreaticum consisted of 13 pairs of homologs(2n=26, n=13). The mitotic and meiotic divisions were observed frequently. In the mitotic metaphase, Karyotype consisted of five pairs of metacentric chromosomes, four pairs of submetacentric chromosomes, three pairs of subtelocentric chromosomes and one pair of telocentric chromosome. Chromosomes of gonadal tissues from stomach fluke, Calicvphoron calicophorum consisted of 9 pairs of homologs(2n=18, n=9). The meiotic divisions was frequently observed, but mitotic divisions was rare. In the mitotic metaphase, Karyotype consisted of two pairs of metacentric chromosomes, three pairs of submetacentric chromosomes and four pairs of subtelocentric chromosomes. Karyotype of Calicophoron calicophorum differed from that of Japanese C calicophorum which was similar to that of Paramphistomum cervi of Korean cattle. Though that of Calicophoron calicophorum of Korean cattle was similar to that of Paramphistomum explanatum of Korean cattle, that have been recognized to be a different species of fluke.

• Applied Chemistry for Engineering
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• v.10 no.6
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• pp.913-916
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• 1999

Fluorine modified diisocyanate(FMD) was synthesized from tris(6-isocyanatohexyl)isocyanurate(TIHI) and N-ethyl-N-2-hydroxyethyl-perfluorooctanesulfonamide(HFA). Fluorine modified polyurethane(FMPU) was also synthesized from FMD and poly(tetramethylene) glycol(PTMG). Modified polyurethanes were made by blending FMPU into the polyester type base polyurethane(BPU). Surface and thermal properties of the blended BPU film was measured by contact angle measurement and DSC. As the amounts of FMPU was increased from 0 wt % to 1 wt %, the surface energy was dramatically decreased from 47.82 dyne/cm to 17.64 dyne/cm. But we observed little change of the contact angle with further increase in the amount of the FMPU up to 10 wt %. The data meant that the surface of the blended polyurethanes was hydrophobic due to the surface arrangement of the fluorine containing moiety in FMPU. Phase separation was induced by the incompatibility of FMPU and BPU for the samples having over 5 wt % of FMPU. The thermal analysis data of these samples showed the thermal behavior of the FMPU itself.

• Applied Chemistry for Engineering
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• v.3 no.4
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• pp.605-613
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• 1992

NCO-terminated prepolymers were synthesized by reacting carbonate-type polyol(PTMCG)($M_w=1,000$ and 2,000) with MDI and N-methyldiethanolamine, as a chain extender. Carbonate-type polyurethane containg zwitterionic group was prepared by reacting the prepolymer with 1,3-propane sultone. From the IR and NMR spectra of model reactions, it was known that the ionization occurred under the same condition. The structure of zwitterionic carbonate-type polyurethane(ZPU) therefore could be confirmed from the model reactions. Glass transition temperature(Tg) ranged between $-15{\sim}-30^{\circ}C$ from the thermal data. Tg was between $-15{\sim}-18^{\circ}C$ for a series of ZPU10 samples and between $-25{\sim}-26^{\circ}C$ for a series of ZPU20 polymers. Tensile strength increased with mole ratio of ionic content. On the contrary, elongation was rather dropped with mole ratio of ionic content. ZPU10-30 having better tensile strength and less elongation was selected as a membrane for the concentration of ethanol aqueous solution through pervaporation. To obtain the better selectivity, it was crosslinked with HMDI. In the swelling test, it showed the higher swelling degree at around 50wt% ethanol concentration due to the plastization effect of ethanol. To optimize the separation capacity, two operating factors-feed concentration and temperature-were considered. The overall separation capacity was as follows : separation factor, 2~83.2 ; the flux, $25.4{\sim}58.8g/m^2hr$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.449-455
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• 1997

The anisotropic etching behavior of single crystal silicon were studied in aqueous KOH solution. N-type (100) oriented single crystal silicon wafers were used for the study, and the $SiO_2$ layer, whose etching rate is known to be much slower than that of silicon in the KOH solution, was used as a mask for the silicon etching. The silicon etching rate and the etching properties are shown to be a function of etchant temperature uniformity, circulation speed, and circulation direction of the etchant as well as the etchant concentration and the temperature. The etching rate is increased as the temperature is increased from $10\mu \textrm{m}/hr$ to $250\mu \textrm{m}/hr$ in the range of $50^{\circ}C~105^{\circ}C$. Hillock density and height is observed to be correlated with the etchant concentration and the etch temperature. The variation of the hillock density was explained by the ratio between the etching rate of (100) orientation and that of (111) orientation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.3
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• pp.165-170
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• 2018

In this study, double-layered TCO (transparent conductive oxide) films were produced by depositing two distinct TCO materials: $SnO_2$ works as an n-type layer and ITO (indium-doped tin oxide) serves as a transparent conductor. Both transparent conductive oxide-films were sequentially deposited by sputtering. The electrical and optical properties of single-layered TCO films ($SnO_2$) and double-layered TCO ($ITO/SnO_2$) films were investigated. A TCO-embedding photodetector was realized through the formation of an $ITO/SnO_2/p-Si/Al$ layered structure. The remarkably high rectifying ratio of 400.64 was achieved with the double-layered TCO device, compared to 1.72 with the single-layered TCO device. This result was attributed to the enhanced electrical properties of the double-layered TCO device. With respect to the photoresponses, the photocurrent of the double-layered TCO photodetector was significantly improved: 1,500% of that of the single-layered TCO device. This study suggests that, due to the electrical and optical benefits, double-layered TCO films are effective for enhancing the photoresponses of TCO photodetectors. This provides a useful approach for the design of photoelectric devices, including solar cells and photosensors.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.89-89
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• 2009

높은 소수반송자 수명(life-time)을 가지는 고품위 실리콘 기판은 고효율 실리콘 이종접합 태양전지 제작을 위한 중요 요소 기술 중 하나이다. 본 연구에서는 n-type c-Si 기판을 이용한 고효율 실리콘 이종접합 태양전지제작을 위해 hot water oxidation(HWO) 공정을 이용하여 고품위 실리콘 기판을 제작하였다. 실리콘 기판의 특성 분석은 Qusi-steady state photoconductance (QSSPC)를 이용하여 소수반송자 수명을 측정하였으며, 기판의 면저항 및 wetting angle을 측정하여 공정에 따른 특성변화를 분석하였다. Saw damage etching 된 기판을 웨이퍼 표면으로부터 particle, 금속 불순물, 유기물 등의 오염을 제거하기 위해 $60{\sim}85^{\circ}C$로 가열된 Ammonia수, 과산화수소수($NH_4OH/H_2O_2/H_2O$), 염산 과산화수소수($HCL/H_2O_2/H_2O$) 및 실온 희석불산(DHF) 중에 기판을 각각 10분 정도씩 침적하여, 각각의 약액 처리 후에 매회 10분 정도씩 순수(DI water)에서 rinse하여 RCA 세정을 진행한 후 HWO 공정을 통해 기판 표면에 얇은 산화막 을 형성시켜 패시베이션 해주었다. HF를 이용하여 자연산화막을 제거시 HWO 공정을 거친 기판은 매끄러운 표면과 패시베이션 영향으로 기판의 소수 반송자 수명이 증가하며, 태양전지 제작시 접촉저항을 감소시켜 효율을 증가 시킬수 있다. HWO 공정은 반응조 안의 DI water 온도와 반응 시간에 따라 life-time을 측정하여 진행하였으며, 이후 PE-CVD법으로 증착된 a-Si:H layer 및 투명전도 산화막, 금속전극을 증착하여 실리콘 이종접합 태양전지를 제작하였다.

• Applied Chemistry for Engineering
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• v.8 no.4
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• pp.679-684
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• 1997

The major constituents in spent FCC catalysts are Si, Al, Fe, Ti, alkali metals and some others. The spent catalyst is also composed small amounts of rare metals such as Ce, Nd, Ni and V. The selective adsorption and concentration of Ce and Nd from the leaching solution of spent FCC catalysts with sulfuric acid($0.25mol/dm^3$) were carried out by the column method with a chelate resin having a functional group of aminophosphoric acid type. Ce and Nd were separated from eluate liquor containing Al, Nd and V by the precipitation process with oxalic acid. Vanadium is purified from chloride ion coexistance by solvent extraction, employing tri-n-octyl phosphine oxide as extractant with Al in the raffinate solution. Rare metals with the purity of 99 percent were obtained from the spent FCC catalyst.

• Journal of Sensor Science and Technology
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• v.29 no.1
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• pp.27-32
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• 2020

This study proposes a pixel-patterning method for organic light-emitting diodes (OLEDs) based on thermal transfer. An infrared lamp was introduced as a heat source, and glass type donor element, which absorbs infrared and generates heat and then transfers the organic layer to the substrate, was designed to selectively sublimate the organic material. A 200 nm-thick layer of molybdenum (Mo) was used as the lightto-heat conversion (LTHC) layer, and a 300 nm-thick layer of patterned silicon dioxide (SiO₂), featuring a low heat-transfer coefficient, was formed on top of the LTHC layer to selectively block heat transfer. To prevent the thermal oxidation and diffusion of the LTHC material, a 100 nm-thick layer of silicon nitride (SiN_x) was coated on the material. The fabricated donor glass exhibited appropriate temperature-increment property until 249 ℃, which is enough to evaporate the organic materials. The alpha-step thickness profiler and X-ray reflection (XRR) analysis revealed that the thickness of the transferred film decreased with increase in film density. In the patterning test, we achieved a 100 ㎛-long line and dot pattern with a high transfer accuracy and a mean deviation of ± 4.49 ㎛. By using the thermal-transfer process, we also fabricated a red phosphorescent device to confirm that the emissive layer was transferred well without the separation of the host and the dopant owing to a difference in their evaporation temperatures. Consequently, its efficiency suffered a minor decline owing to the oxidation of the material caused by the poor vacuum pressure of the process chamber; however, it exhibited an identical color property.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.10a
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• pp.56-56
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• 1999

For advanced TFT-LCD manufacturing processes, dry etching of thin-film layers(a-Si, $SiN_x$, SID & gate electrodes, ITO etc.) is increasingly preferred instead of conventional wet etching processes. To dry etch Al gate electrode which is advantageous for reducing propagation delay time of scan signals, high etch rate, slope angle control, and etch uniformity are required. For the Al gate electrode, some metals such as Ti and Nd are added in Al to prevent hillocks during post-annealing processes in addition to gaining low-resistivity($<10u{\Omega}{\cdot}cm$), high performance to heat tolerance and corrosion tolerance of Al thin films. In the case of AI-Nd alloy films, however, low etch rate and poor selectivity over photoresist are remained as a problem. In this study, to enhance the etch rates together with etch uniformity of AI-Nd alloys, magnetized inductively coupled plasma(MICP) have been used instead of conventional ICP and the effects of various magnets and processes conditions have been studied. MICP was consisted of fourteen pairs of permanent magnets arranged along the inside of chamber wall and also a Helmholtz type axial electromagnets was located outside the chamber. Gas combinations of $Cl_2,{\;}BCl_3$, and HBr were used with pressures between 5mTorr and 30mTorr, rf-bias voltages from -50Vto -200V, and inductive powers from 400W to 800W. In the case of $Cl_2/BCl_3$ plasma chemistry, the etch rate of AI-Nd films and etch selectivity over photoresist increased with $BCl_3$ rich etch chemistries for both with and without the magnets. The highest etch rate of $1,000{\AA}/min$, however, could be obtained with the magnets(both the multi-dipole magnets and the electromagnets). Under an optimized electromagnetic strength, etch uniformity of less than 5% also could be obtained under the above conditions.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.189-189
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• 2010

최근 연구와 생산에 가속이 붙기 시작한 AMOLED는 모두 LTPS TFT를 사용하고 있다. LTPS TFT는 높은 전자 이동도를 가지고 있기 때문에 현재 각광 받는 AMOLED에 잘 맞는다. 하지만 LTPS TFT는 균일성이 낮고 고비용이라는 문제점이 있으며, 현재 대면적 기술이 부족한 상태이다. 극복방안으로 AMOLED를 타겟으로 하는 Oxide TFT와 a-Si TFT의 기술이 발전되고 있다. Oxide TFT는 AMOLED backplane으로 사용될 수 있는 강력한 후보 중의 하나이다. Oxide TFT는 단결정 산화물과 다결정 복합 산화물 두 가지 범주를 가지고 있다. 본 연구에서는 다결정 Oxide TFT의 하나인 ZTO TFT를 연구함으로서 Engineer의 근본적 이슈인 저비용에 초점을 맞추어 소자특성을 확인해보도록 한다. n-type wafer 에 PE-CVD 장비를 이용하여 SiNx를 120 nm 증착하고, channel layer인 ZTO 용액을 spin-coating을 이용하여 형성하였다. 균일하게 형성된 ZTO의 결정을 위하여 $500^{\circ}C$에서 1시간 동안 공기 중에서 annealing을 하였다. 과정을 거친 ZTO는 약 30 nm 두께로 형성되었다. Thermal evaporator를 이용하여 Source, Drain의 전극을 형성 하고, wafer 뒷면에는 Silver paste를 이용하여 Gate를 형성하였다. 제작된 소자를 dark room temperature 에서 측정 하였다. 측정된 소자는 우수한 전기적 특성과 0.96 cm2/Vs 인 이동도를 얻어냈다. 이러한 소자의 안정성에 따른 전기적 특성을 관측하기 위하여 상온에서 $100^{\circ}C$ 까지의 온도 스트레스를 주었다. Stress에 따른 소자는 상온에서 시작하여 온도가 올라갈수록 이동도가 낮아지고, 문턱전압 증가와 SS이 커짐을 알 수 있었다. 캐리어의 운동 매커니즘에서 온도가 올라가면 격자진동의 영향을 크게 받음으로서 캐리어의 이동도가 낮아져 전기적 특성이 낮아지는 점이 본 연구에도 적용됨을 알 수 있었다. 본 연구를 통하여 화학적 안정성을 지닌 소자라는 점과 더불어 여타 TFT공정에 비하여 현저히 낮은 공정비용을 통하여 AMOLED가 요구하는 수준의 특성에 가까운 소자를 제작할 수 있다는 것을 확인하였으며 앞으로의 추가적인 연구에 따라서 더욱 완성된 공정기술을 기대할 수 있었다.