• Journal of Microbiology and Biotechnology
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• v.20 no.4
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• pp.775-778
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• 2010

A total of 2,858 meat samples collected during 2003-2008 in Korea were investigated, and methicillin-resistant Staphylococcus aureus (MRSA) isolates were isolated from 1.0% (9/890) of beef, 0.3% (4/1,055) of pork, and 0.3% (3/913) of chicken meat samples, respectively. MRSA isolates showed the two sequence types (STs), ST72 from beef and pork and ST692 from chicken meat. MRSA isolates from beef and pork were Panton-Valentine leukocidin-negative, staphylococcal cassette chromosome mec type IVa strain with ST72, which is the most prevalent type of communityacquired MRSA in Korea. An identical pulse-field gel electrophoresis pattern was detected among 10 of 16 MRSA isolates: 9 strains from beef (n=5) and pork (n=4) in 2008, and one strain from beef in 2005.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.35.2-35.2
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• 2011

나노와이어를 제작하는 많은 방법들 중에서 실리콘 기판을 무전해식각하여 실리콘 나노와이어를 제작하는 방법은 쉽고 간단하기 때문에 최근 많은 연구가 진행되고 있다. 무전해식각법을 이용한 실리콘 나노와이어 합성은 단결정 실리콘 나노와이어를 합성할 수 있고, p 또는 n형의 도핑 정도에 따라 원하는 전기적 특성의 기판을 선택하여 제작할 수 있다는 장점을 가지고 있다. 하지만 n형으로 도핑된 기판으로 나노와이어를 제작하였을 경우 식각으로 인한 나노와이어 표면의 거칠기로 인하여, 실제로는 n형 반도체 특성을 나타내지 않는 문제점을 가지고 있다. 따라서 본 연구에서는 무전해식각법으로 합성한 n형 나노와이어의 거칠기를 조절하고 filed-effect transistor (FET) 소자를 제작하여 나노와이어의 전기적 특성변화를 확인하였다. n형 나노와이어의 거칠기를 조절하기 위하여 열처리를 통해 표면을 산화시켰고, 열처리 시간에 따른 나노와이어 FET 소자를 제작하여 I-V 특성을 관찰하였다. 이때 절연막과 나노와이어 계면 사이의 결함을 최소화 하기 위하여 나노와이어를 poly-4-vinylphenol (PVP) 고분자 절연막에 부분 삽입시켰다. 나노와이어 표면의 거칠기는 high-resolution transmission electron microscopy (HRTEM)을 통하여 확인하였으며, 전기적 특성은 Ion/Ioff ratio, 이동도, subthreshold swing, threshold voltage 값 등을 평가하였다.

• Journal of the Semiconductor & Display Technology
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• v.10 no.1
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• pp.51-55
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• 2011

The surface passivation is one of the important methods that can improve the efficiency of solar cells and can be classified into two methods: wet-chemical passivation and film passivation. In this paper, chemical HF treatment were employed for the passivation of n-type silicon wafers and their effects were studied. To investigate film passivation effects, the silicon nitride films were also deposited by PECVD (plasma-enhanced chemical vapor deposition) on n-type silicon wafers treated with chemical HF. The minority carrier lifetime measurements were used for evaluation of the passivation characteristics in the all experiments steps. We confirmed that the minority carrier lifetime was improved with chemical HF treatment due to passivation effects by H-termination.

• Journal of the Semiconductor & Display Technology
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• v.22 no.3
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• pp.46-51
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• 2023

We investigated the MoS₂ thin film layer by thermolytic deposition and applied it to the silicon solar cells. MoS₂ thin films were made by two methods of dipping and spin coating of (NH₄)₂MoS₄ precursor solution. We implemented two types of substrates of microtextured and nano-microtextured 6-in. Si pn junction wafers. The fabricated MoS₂ thin film layer was analyzed, and solar cells were fabricated by applying the standard silicon solar cell process. The MoS₂ thin film layer of sulfur-deficient form was deposited on the n-type emitter layer, and electrons, which are minority carriers, were well transported at the interface and exhibited photovoltaic solar cell characteristics. The cell efficiencies were achieved at 5% for microtextured wafers and 2.56% for nano-microtextured wafers.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.210-214
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• 2016

In this paper, the decrease in the contact resistance of Ni germanide/Ge contact was studied as a function of the thickness of the antimony (Sb) interlayer for high performance Ge MOSFETs. Sb layers with various thickness of 2, 5, 8 and 12 nm were deposited by RF-Magnetron sputter on n-type Ge on Si wafers, followed by in situ deposition of 15nm-thick Ni film. The contact resistance of samples with the Sb interlayer was lower than that of the reference sample without the Sb interlayer. We found that the Sb interlayer can lower the contact resistance of Ni germanide/Ge contact but the reduction of contact resistance becomes saturated as the Sb interlayer thickness increases. The proposed method is useful for high performance n-channel Ge MOSFETs.

• Animal Systematics, Evolution and Diversity
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• v.31 no.3
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• pp.141-145
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• 2015

A new marine sponge, Antho (Acarnia) seogwipoensis n. sp., of the family Microcionidae, was collected from Seogwipo-si, Jeju-do, Korea, about 100 m in depth using a gill net on 1969. The genus Antho Gray, 1867 including Demospongiae, Poecilosclerida, Microcionidae, is a large group of sponges. About 100 species in Antho were reported from worldwide. The genus Antho contains five subgenera: Antho, Acarnia, Isopenectya, Jia, and Plocamia. Among them, about 30 species in Acarnia were described in world sponge. A new sponge's body shape is branching, size up to 124 mm wide, 213 mm high, 3-8 mm thick in branch and 7-9 mm thick in stalk. Antho (Acarnia) seogwipoensis n. sp. is similar to A. (A.) novizelanicum Ridley and Duncan, 1881 based on their spicules type and skeletal structure, but differs in the spicules dimension and growth form. This new species is branched growth form and have three kinds of toxa.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.2
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• pp.55-62
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• 1992

Polycrystalline silicon ingots were manufactured using the casting method for polycrystalline silicon solar cells. These ingots were cut into wafers and ten n$^{+}$p type solar cells were made through the following simple process` surface etching, n$^{+}$p junction formation, metalization and annealing. For the grain boundary passivation, the samples were oxidized in O$_2$ for 5 min. at 80$0^{\circ}C$ prior to diffusion in Ar for 100 min. at 95$0^{\circ}C$. The conversion efficiency of polycrystalline silicon solar cells made from these wafers showed about 70-80% of those of the single crystalline silicon solar cell and superior conversion efficiency, compared to those of commercial polycrystalline wafers of Wacker Chemie. The maximum conversion efficiency of our wafers was indicated about 8%(without AR coating) in spite of such a simple fabrication method.

• Bulletin of the Korean Chemical Society
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• v.23 no.5
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• pp.749-757
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• 2002

Chiral oxazolidin-2-one is easily prepared from D-mannitol and demonstrated to undergo highly diastereoselective alkylation reactions via lithium imide Z-enolates of its N-acyl derivatives to afford ${\alpha}-branched$ products. Evans syn and non-Evans sy n aldol products were also selectively obtained using this new auxiliary in high diastereomeric purity by simply changing the stoichiometry of TiCl4 and the nature of the amine base. Also, this new auxiliary is employed in diastereoselective Staudinger-type ${\beta}-lactam$ syntheses. Using 2-chloro-1-methylpyridinium iodide as the dehydrating agent, the reaction of auxiliary tethered acetic acid with trans imines gave the desired ${\beta}-lactams$ with cis-selectivity.

• Animal Systematics, Evolution and Diversity
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• v.25 no.2
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• pp.179-181
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• 2009

A new species of the genus Halichondria (Eumastia) maraensis n. sp. (Demospongiae: Halichondrida: Halichondriidae) was collected from West Marado Island, Daejeong-eup, Seogwipo-si, Jeju-do Island, Korea during the period of Dec. 2006 to Feb. 2007 by a fishing net (60-80 m in depth). Halichondria (E.) maraensis n. sp. is similar to H. (E.) sitiens (Schmidt, 1870) in the type of the spicules. However they differ in spicules size and conical fistules at the surface. Oxeas of the new species are smaller and thicker than those of H. (E.) sitiens. Surface conules of the new species is not transparent, and has no oscules at the terminal short conules but H. (E.) sitiens has hollow papillae and terminal oscules.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.393-393
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• 2011

오늘 날 태양전지 산업에서 가장 많은 생산을 하고 있는 분야는 결정질 태양전지분야이다. 현재는 이러한 시대적 요구에 따라 많은 연구가 진행되고 있는데 특히 junction을 이루는 n layer의 doping profile을 선택적으로 형성하여 개방전압 및 단락전류를 향상시키는 연구가 활발히 진행되고 있다. 본 연구는 이러한 n type layer의 doping profile을 선택적으로 형성하는 selective emitter solar cell에 관한 연구로써 SILVACO simulation을 이용하여 low Rs 영역은 고정하고 high Rs 영역의 doping depth를 가변 함으로써 high Rs 영역을 달리 형성하는 방법으로 selective emitter solar cell의 high Rs영역의 최적화에 관한 전산모사를 실시하였다. 각각의 가변조건에 따라 quantum efficiency를 통한 광학적 분석과 I-V를 통한 전기적 분석을 하여 high Rs영역을 최적화 하였다.