• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.57-58
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• 2011

III-V족 화합물 반도체의 일종인 InSb는 77 K에서 0.23 eV의 작은 밴드 갭을 가지며 높은 전하 이동도를 가지고 있기 때문에 대기권에서 전자파 흡수가 일어나지 않는 3~5 ${\mu}m$범위의 장파장 적외선 감지가 가능하여 중적외선 감지 소자로 이용되고 있다. 하지만 InSb는 밴드 갭이 매우 작기 때문에, 소자 제작시 누설전류에 의한 소자 특성의 저하가 문제시 되고 있다. 또한 다른 화합물 반도체에 비해 녹는점이 낮고, 휘발성이 강한 5족 원소인 Sb의 승화로 기판의 화학양론적 조성비(stoichiometry)가 변하기 쉬워, 계면특성 저하의 원인이 된다. 따라서 우수한 특성을 가지는 적외선 소자의 구현을 위해서, 저온에서 계면 특성이 우수한 고품질의 절연막 증착 연구가 필수적이다. 본 연구에서는 InSb 기판 위에 $SiO_2$, $Si_3N_4$의 절연막 형성시 증착온도의 변화에 따른 계면 트랩 밀도를 분석하였다. $SiO_2$, $Si_3N_4$ 절연막은 플라즈마 화학 기상 증착법(PECVD)을 이용하여 n형 InSb 기판 위에 증착하였으며, 증착온도를 $120^{\circ}C$부터 $240^{\circ}C$까지 변화시켰다. Metal oxide semiconductor(MOS) 구조 제작을 통하여, 커패시턴스-전압(C-V)분석을 진행하였으며, 절연막과 InSb 사이의 계면 트랩 밀도를 Terman method를 이용하여 계산하였다[1]. 또한, $SiO_2$와 $Si_3N_4$의 XPS 분석과 TOF-SIMS 분석을 통하여 계면 트랩 밀도의 원인을 밝혀 보았다. $120{\sim}240^{\circ}C$ 온도 범위에서 계면 트랩 밀도는 $Si_3N_4$의 경우 $2.4{\sim}4.9{\times}10^{12}cm^{-2}eV^{-1}$, $SiO_2$의 경우 $7.1{\sim}7.3{\times}10^{11}cm^{-2}eV^{-1}$ 값을 나타냈고, 두 절연막 모두 증착 온도가 증가할수록 계면 트랩 밀도가 증가하는 경향을 보였다. 그러나 모든 샘플에서 $Si_3N_4$의 경우, flat band voltage가 음의 전압으로 이동한 반면, $SiO_2$의 경우, 양의 전압으로 이동하는 것을 확인할 수 있었다. 계면 트랩 밀도 증가의 원인을 확인하기 위해서, oxide를 $120^{\circ}C$, $240^{\circ}C$에서 증착시킨 샘플을 XPS 분석을 통하여 깊이에 따른 성분분석을 하였고, 그 결과, $240^{\circ}C$에서 증착된 샘플에서 계면에서 $In_2O_3$와 $Sb_2O_3$ 피크의 증가를 확인하였다. 이는 계면에서 oxide양이 증가함을 의미하며, 이렇게 생성된 oxide는 계면 트랩으로 작용하므로, 계면 특성을 저하시키는 원인으로 작용함을 알 수 있었다. Nitride 절연막을 증착시킨 샘플은 TOF-SIMS 분석을 통해, 계면에서의 성분 분석을 하였고, 그 결과, $240^{\circ}C$에서 증착된 샘플에서 In-N, Sb-N, Si-N 결합의 감소를 확인하였다. 이렇게 분해된 결합들의 dangling 결합이 늘어 계면 트랩으로 작용하므로, 계면 특성을 저하시키는 원인으로 작용함을 알 수 있었다. 최종적으로, 소자특성을 확인 하기 위하여 계면 트랩 밀도가 가장 낮게 측정된 $200^{\circ}C$ 조건에서 $SiO_2$ 절연막을 증착하여 InSb 적외선 소자를 제작하였다. 전류-전압(I-V) 분석 결과 -0.1 V에서 16 nA의 누설 전류 값을 보였으며, $2.6{\times}10^3{\Omega}cm^2$의 RoA(zero bias resistance area)를 얻을 수 있었다. 절연막 증착조건의 최적화를 통하여, InSb 적외선 소자의 특성이 개선됨을 확인할 수 있었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.1
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• pp.1-9
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• 2005

A stoichiometric mixture of evaporating materials for AgGaS₂ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, AgGaS₂ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were 590℃ and 440℃, respectively. The temperature dependence of the energy band gap of the AgGaS₂ obtained from the absorption spectra was well described by the Varshni's relation, E/sub g/(T) = 2.7284 eV - (8.695×10/sup -4/ eV/K)T²/(T + 332 K). After the as-grown AgGaS₂ single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of AgGaS₂ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of V/sub Ag/, V/sub s/, Ag/sub int/, and S/sub int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted AgGaS₂ single crystal thin films to an optical n-type. Also, we confirmed that Ga in AgGaS₂/GaAs crystal thin films did not form the native defects because Ga in AgGaS₂ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.6
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• pp.30-37
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• 1989

The PIN type a-SiC:H/a-Si:H heterojunction solar cells were fabricated by using the rf glow discharge decomposition of $SiH_4$ mixed with $CH_4,B_2,H_6\;and\;PH_3.$ The efficiency of the solar cell of the $SnO_2/ITO$ was higher than that of ITO transparent oxide layer by 1.5%. The P layer was prepared with the thickness of $100{\AA}$ and $CH_4/SiH_4$ ration of 5. The I layer has been deposited on the P layer and it is not pure intrinsic but near N type. So $SiH_4$ mixed with $B_2H_6$ of 0.3ppm was used to change this N type nature to intrinsic having the thickness of 5000${\AA}$. And consecutively, the N layer was deposited with t ethickness of $400{\AA}$ using $SiH_4/PH_3$ mixtures. The solar cell demonstrated 0.94V of $V_{oc'}$ 14.6mA/cm of $J_{sc}$ and 58.2% of FF, resulting the efficiency of 8.0%. To minimize loss by the reflection of light, $MgF_2$ layer was coated on the lgass and the efficiency was improved by 0.5%. Therefore, the solar cell indicated overall efficiency of 8.5%.

• Journal of the Korean Society for Nondestructive Testing
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• v.25 no.2
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• pp.117-126
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• 2005

A stoichiometric mixture of evaporating materials for $AgGaS_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaS_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $590^{\circ}C\;and\;440^{\circ}C$, respectively The temperature dependence of the energy band gap of the $AgGaS_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7284 eV-(8.695{\times}10^{-4}eV/K)T^2/T(T+332K)$. After the as-grown $AgGaS_2$, single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of $AgGaS_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{Ag},\;V_s,\;Ag_{int},\;and\;S_{int}$, obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaS_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $AgGaS_2$ crystal thin films did not form the native defects because Ga in $AgGaS_2$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.6
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• pp.709-714
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• 2018

This study researched the reasons for changing polarity in accordance with junction properties in an interface of semiconductors. The contact properties of semiconductors are related to the effect of the semiconductor's device. Therefore, it is an important factor for understanding the junction characteristics in the semiconductor to increase the efficiency of devices. For generation of various junction properties, carbon-doped silicon oxide (SiOC) was deposited with various argon (Ar) gas flow rates, and the characteristics of the SiOC was varied based on the polarity in accordance with the Ar gas flows. Tin-doped zinc oxide (ZTO) as the conductor was deposited on the SiOC as an insulator to research the conductivity. The properties of the SiOC were determined from the formation of a depletion layer by the ionization reaction with various Ar gas flow rates due to the plasma energy. Schottky contact was good in the condition of the depletion layer, with a high potential barrier between the silicon (Si) wafer and the SiOC. The rate of ionization reactions increased when increasing the Ar gas flow rate, and then the potential barrier of the depletion layer was also increased owing to deficient ions from electron-hole recombination at the junction. The dielectric properties of the depletion layer changed to the properties of an insulator, which is favorable for Schottky contact. When the ZTO was deposited on the SiOC with Schottky contact, the stability of the ZTO was improved by the ionic recombination at the interface between the SiOC and the ZTO. The conductivity of ZTO/SiOC was also increased on SiOC film with ideal Schottky contact, in spite of the decreasing charge carriers. It increases the demand on the Schottky contact to improve the thin semiconductor device, and this study confirmed a high-performance device owing to Schottky contact in a low current system. Finally, the amount of current increased in the device owing to ideal Schottky contact.

• Journal of the Korean Electrochemical Society
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• v.8 no.1
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• pp.32-36
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• 2005

[ $WO_3$ ] and $NiO-WO_3$ thin films were deposited on a Si (100) substrate by using high vacuum thermal evaporation. The effects of various film thicknesses on the surface morphology $WO_3$ and $NiO-WO_3$ thin films were investigated. X-ray diffraction (XRD), Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy(XPS) were employed to characterize the deposited films. The results suggest that as $WO_3$ thin films became thick, their grain grew up to a $0.6{\mu}m$. On the other hand, NiO-doping to $WO_3$ thin films inhibited the grain growth five times less than undoped $WO_3$ thin films. This results show that NiO doping inhibited the grain growing of $WO_3$ thin films. Also, the variation of NOx sensitivity $(R_{NOx}/R_{air})$ to the thickness of $WO_3$ and $NiO-WO_3$ thin films were measured according to the thickness change of thin films and the working temperature of sensor in 5ppm NOx gas. As a result, $NiO-WO_3$ thin films showed more excellent properties than $WO_3$ thin films for NOx sensitivity.