• Title/Summary/Keyword: n:2-Lattice

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INTERPOLATION FOR HILBERT-SCHMIDT OPERATOR AND APPLICATION TO OPERATOR CORONA THEOREM

  • Kang, Joo-Ho;Ha, Dae-Yeon;Baik, Hyoung-Gu
    • Journal of applied mathematics & informatics
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    • v.9 no.1
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    • pp.341-347
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    • 2002
  • Given operators X and Y acting on a Hilbert space H, an interpolating operator is a bounded operator A such that AX = Y. An interpolating operator for n-operators satisfies the equation $AX_i = Y_i$, for i = 1,2…, n. In this paper, we investigate Hilbert-Schmidt interpolation problems in tridiagonal algebra by connecting the classical corona theorem.

The recombination velocity at III-V compound heterojunctions with applications to Al/$_x$/Ga/$_1-x$/As-GaAs/$_1-y$/Sb/$_y$/ solar cells

  • 김정순
    • 전기의세계
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    • v.28 no.4
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    • pp.53-63
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    • 1979
  • Interface recombination velocity in $Al_{x}$G $a_{1-x}$ As-GaAs and $Al_{0.85}$, G $a_{0.15}$ As-GaA $s_{1-y}$S $b_{y}$ heterojunction systems is studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n $Al_{x}$G $a_{1-x}$ As-GaA $s_{1-y}$S $b_{y}$-A $l_{x}$G $a_{1-x}$ As double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAs Sb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates. In the AlGaAs system, elastic lattice deformation with effective Poisson ratios .mu.$_{eff}$ (100=0.312 and .mu.$_{eff}$ (111B) =0.190 was observed. The lattice constant $a_{0}$ (A $l_{x}$G $a_{1-x}$ As)=5.6532+0.0084x.angs. was obtained at 300K which is in good Agreement with Vegard's law. In the GaAsSb system, although elastic lattice deformation was observed in (111) B-oriented crystals, misfit dislocations reduced the Poisson ratio to zero in (100)-oriented samples. When $a_{0}$ (GaSb)=6.0959 .angs. was assumed at 300K, both (100) and (111)B oriented GaAsSb layers deviated only slightly from Vegard's law. Both (100) and (111)B zero-mismatch $Al_{0.85}$ G $a_{0.15}$As-GaA $s_{1-y}$S $b_{y}$ layers were grown from melts with a weight ratio of $W_{sb}$ / $W_{Ga}$ =0.13 and a growth temperature of 840 to 820 .deg.C. The corresponding Sb compositions were y=0.015 and 0.024 on (100) and (111)B orientations, respectively. This occurs because of a fortuitous in the Sb distribution coefficient with orientation. Interface recombination velocity was estimated from the dependence of the effective minority carrier lifetime on double-heterojunction spacing, using either optical phase-shift or electroluminescence timedecay techniques. The recombination velocity at a (100) interface was reduced from (2 to 3)*10$^{4}$ for y=0 to (6 to 7)*10$^{3}$ cm/sec for lattice-matched $Al_{0.85}$G $a_{0.15}$As-GaA $s_{0.985}$S $b_{0.015}$ Although this reduction is slightly less than that expected from the exponential relationship between interface recombination velocity and lattice mismatch as found in the AlGaAs-GaAs system, solar cells constructed from such a combination of materials should have an excellent spectral response to photons with energies over the full range from 1.4 to 2.6 eV. Similar measurements on a (111) B oriented lattice-matched heterojunction produced some-what larger interface recombination velocities.ities.ities.s.

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Effects of Nitrogen Defect on Magnetism of Cu-doped InN: First-principles Calculations

  • Kang, Byung-Sub;Chae, Kwang-Pyo;Lee, Haeng-Ki
    • Journal of Magnetics
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    • v.18 no.2
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    • pp.81-85
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    • 2013
  • We investigate the electronic and magnetic properties in Cu-doped InN with the N vacancy ($V_N$) from first principles calculations. There is the long-range ferromagnetic order between two Cu atoms, attributed to the hole-mediated double exchange through the strong p-d interaction between the Cu atom and neighboring N atom. The system of $V_N$ defect in Cu-doped InN has the lowest formation energy. Due to the hybridization between the Cu-3d and $V_N$ states, the spin-polarization on the Cu atoms in the InN lattice is reduced by $V_N$ defect. So, it shows a weak ferromagnetic behavior.

Synthesis of AlN Powder from $Al_2(SO_4)_3.18H_2O$: II. Deoxidation Effect ($Al_2(SO_4)_3.18H_2O$로부터 AlN 분말의 합성: II. 탈산화 효과)

  • 송태호;이홍림
    • Journal of the Korean Ceramic Society
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    • v.29 no.6
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    • pp.471-479
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    • 1992
  • AlN powder was synthesized by carbothermal reduction and nitridation using Al2(SO4)3.18H2O as the starting material. The synthesized AlN powder was fine but contained oxygen. Therefore carbonaceous material (carbon black or phenol novolac) was added teogether with the sintering aids (CaO, CaF2, CaCl2, Y2O3 and YF3). It was found that pressureless sintering at 1700~180$0^{\circ}C$ after deoxidation at 150$0^{\circ}C$ suppressed the formation of second phase (27R) and reduced the contents of lattice oxygen within AlN ceramics.

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SELF-ADJOINT INTERPOLATION ON AX = Y IN $\mathcal{B}(\mathcal{H})$

  • Kwak, Sung-Kon;Kim, Ki-Sook
    • Honam Mathematical Journal
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    • v.30 no.4
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    • pp.685-691
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    • 2008
  • Given operators $X_i$ and $Y_i$ (i = 1, 2, ${\cdots}$, n) acting on a Hilbert space $\mathcal{H}$, an interpolating operator is a bounded operator A acting on $\mathcal{H}$ such that $AX_i$ = $Y_i$ for i= 1, 2, ${\cdots}$, n. In this article, if the range of $X_k$ is dense in H for a certain k in {1, 2, ${\cdots}$, n), then the following are equivalent: (1) There exists a self-adjoint operator A in $\mathcal{B}(\mathcal{H})$ stich that $AX_i$ = $Y_i$ for I = 1, 2, ${\cdots}$, n. (2) $sup\{{\frac{{\parallel}{\sum}^n_{i=1}Y_if_i{\parallel}}{{\parallel}{\sum}^n_{i=1}X_if_i{\parallel}}:f_i{\in}H}\}$ < ${\infty}$ and < $X_kf,Y_kg$ >=< $Y_kf,X_kg$> for all f, g in $\mathcal{H}$.

Microstructure and Dielectric Properties of (Sr·Ca)TiO3-based Ceramics Exhibiting Nonlinear Characteristics (비선형 특성을 갖는 (Sr·Ca)TiO3계 세라믹의 미세구조 및 유전 특성)

  • 최운식;강재훈;박철하;김진사;조춘남;송민종
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.1
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    • pp.24-29
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    • 2002
  • In this paper, the microstructure and the dielectric properties of Sr$\_$1-x/CaxTiO$_3$(0$\leq$x$\leq$0.2)-based grain boundary layer ceramics were investigated. The sintering temperature and time were 1420∼152 0$\^{C}$ and 4 hours in N$_2$ gas, respectively. The average grain size and the lattice constant were decreased with increasing content of Ca, but the average grain size was increased with increase of sintering temperature. The second phase foamed by the thermal diffusion of CuO from the surface leads to verb high apparent dielectric constant, $\xi$$\_$r/>50000 and low dielectric loss, tan$\delta$<0.05. X-ray diffraction patterns of Sr$\_$1-x/CaxTiO$_3$ exhibited cubic structure, and the peaks shifted upward and the peak intensity were decreased with x. This is due to the lattice contraction as Sr is replaced by Ca with a smaller ionic radius. The specimens treated thermal diffusion for 2hrs in 1150$\^{C}$ exhibited nonlinear current-voltage characteristic, and its nonlinear coefficient(a) was overt 7.

Nuclear Magnetic Resonance of a Layered Organic-Inorganic Hybrid System (C8H17NH3)2SnCl6

  • Lee, Kyu Won;Lee, Cheol Eui
    • Journal of Magnetics
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    • v.9 no.1
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    • pp.1-4
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    • 2004
  • Three successive phase transitions in bis-n-octhylammonium hexachlorostannate, $(n-C_8H_{17}NH_3)_2SnCl_6$, were studied by means of the ^1H nuclear magnetic resonance linewidth and spin-lattice relaxation measurements. Unlike the compounds with longer hydrocarbon chains, the order-disorder and conformational nature were found to coexist in the phase transitions.

HILBERT-SCHMIDT INTERPOLATION FOR OPERATORS IN TRIDIAGONAL ALGEBRAS

  • Kang, Joo-Ho;Kim, Ki-Sook
    • Journal of applied mathematics & informatics
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    • v.10 no.1_2
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    • pp.227-233
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    • 2002
  • Given operators X and Y acting on a Hilbert space H, an interpolating operator is a bounded operator A such that AX = Y. An interpolating operator for n-operators satisfies the equation AX$\sub$i/=Y$\sub$i/, for i=1,2, ‥‥, R. In this article, we investigate Hilbert-Schmidt interpolation for operators in tridiagonal algebras.

Dual-tree Wavelet Discrete Transformation Using Quincunx Sampling For Image Processing (디지털 영상 처리를 위한 Quincunx 표본화가 사용된 이중 트리 이산 웨이브렛 변환)

  • Shin, Jong Hong
    • Journal of Korea Society of Digital Industry and Information Management
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    • v.7 no.4
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    • pp.119-131
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    • 2011
  • In this paper, we explore the application of 2-D dual-tree discrete wavelet transform (DDWT), which is a directional and redundant transform, for image coding. DDWT main property is a more computationally efficient approach to shift invariance. Also, the DDWT gives much better directional selectivity when filtering multidimensional signals. The dual-tree DWT of a signal is implemented using two critically-sampled DWTs in parallel on the same data. The transform is 2-times expansive because for an N-point signal it gives 2N DWT coefficients. If the filters are designed is a specific way, then the sub-band signals of the upper DWT can be interpreted as the real part of a complex wavelet transform, and sub-band signals of the lower DWT can be interpreted as the imaginary part. The quincunx lattice is a sampling method in image processing. It treats the different directions more homogeneously than the separable two dimensional schemes. Quincunx lattice yields a non separable 2D-wavelet transform, which is also symmetric in both horizontal and vertical direction. And non-separable wavelet transformation can generate sub-images of multiple degrees rotated versions. Therefore, non-separable image processing using DDWT services good performance.

Preparation of Fine Titanium Nitride Powders from Titanium Trichloride (염화티타늄(III)으로부터 질화티타늄 미분체의 합성)

  • 이진호;장윤식;박홍채;오기동
    • Journal of the Korean Ceramic Society
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    • v.27 no.7
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    • pp.916-924
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    • 1990
  • The preparatin of the fine TiN powders by reduction-nitridation of TiCl3-Al-N2 system was attempted in the temperature range from 350$^{\circ}$to 100$0^{\circ}C$. The formation mechanism and kinetics of TiN were examined, and the resultant TiN powder was characterized by means of XRD, PSA and SEM-EPMA methods. TiN was formed at temperatrue higher than $600^{\circ}C$. As an intermediate phase, AlTi was obtained. The apparent activation energy for the formation of TiN was approximately 4.2kcal/mole(600$^{\circ}$~90$0^{\circ}C$). The crystallite size and lattice constnat of TiN powder obtained in the temperature range from 600$^{\circ}$to 100$0^{\circ}C$ for 2h at the Al/TiCl3 molar ratio of 1.0 were 160~255A and 4.231~4.239A, respectively. According to PSA measurement, the mean particle size ranged from 14.0 to 14.8${\mu}{\textrm}{m}$.

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