• Korean Journal of Agricultural and Forest Meteorology
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• v.2 no.4
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• pp.190-197
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• 2000

Anions such as C $l^{[-10]}$ , N $O_3$$^{[-10]}$ , S $O_4$$^{2-}$, P $O_4$$^{3-}$, and organic anions, that do not become a part of the clay mineral crystal lattice, are of considerable interest in soils which are a potential sink caused by acid rain. In this paper, elution of native sulfate and breakthrough curves (BTC) were obtained from miscible displacement of non-specifically or specifically adsorbed anions through non-saturated or saturated Bt soil of Chungwon series. The shape and position of the BTC's could be affected by adsoprtion and ion exchange onto the soil particle surfaces. Measured BTC's for oxalic acid under unsaturated and saturated conditions showed that less pore volumes were required to displace the native S $O_4$$^{2-}$S from the soil column, and that maximum detection limit of oxalic acid reached earlier than under unsaturated. The retarded BTC's to the righthand side could be attributed by different adsorption behavior of each anion, although BTC's may be influenced by the smaller order of velocity change. The alternate breakthrough and elution curves show the rapid approach to the maximum detection limit of C/Co = 1, compared to progressive tailing of elution curve to reach to C/Co = 0. The probable explanation for asymmetric elution patterns for both anion is that the anion was selectively adsorbed on the positively charged soil surface from the solution passing in the soil column. On the other hand, the variations of pH in effluent showed that pH was increased to 7 in the first 6 pore volume and then gradually decreased to pH 4.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.30 no.6
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• pp.467-478
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• 2019

This paper describes the development and measurement results of a wide-band planar active phase array antenna system for an electronic warfare jamming transmitter. The system is designed as an $8{\times}8$ triangular lattice array using a $45^{\circ}$ slant wide-band antenna. The 64-element transmission channel is composed of a wide-band gallium nitride(GaN) solid state power amplifier and a gallium arsenide(GaAs) multi-function core chip(MFC). Each GaAs MFC includes a true-time delay circuit to avoid a wide-band beam squint, a digital attenuator, and a GaAs drive amplifier to electronically steer the transmitted beam over a ${\pm}45^{\circ}$ azimuth angle and ${\pm}25^{\circ}$ elevation angle scan. Measurement of the transmitted beam pattern is conducted using a near-field measurement facility. The EIRP of the designed system, which is 9.8 dB more than the target EIRP performance(P), and the ${\pm}45^{\circ}$ azimuth and ${\pm}25^{\circ}$ elevation beam steering fulfill the desired specifications.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.129-129
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• 2018

Hard coating application is effective way of cutting tool for hard-to-machine materials such as Inconel, Ti and composite materials focused on high-tech industries which are widely employed in aerospace, automobile and the medical device industry also Information Technology. In cutting tool for hard-to-machine materials, high hardness is one of necessary condition along with high temperature stability and wear resistance. In recent years, high-entropy alloys (HEAs) which consist of five or more principal elements having an equi-atomic percentage were reported by Yeh. The main features of novel HEAs reveal thermodynamically stable, high strength, corrosion resistance and wear resistance by four characteristic features called high entropy, sluggish diffusion, several-lattice distortion and cocktail effect. It can be possible to significantly extend the field of application such as cutting tool for difficult-to-machine materials in extreme conditions. Base on this understanding, surface coatings using HEAs more recently have been developed with considerable interest due to their useful properties such as high hardness and phase transformation stability of high temperature. In present study, the nanocomposite coating layers with high hardness on WC substrate are investigated using high entropy alloy target made a powder metallurgy. Among the many surface coating methods, reactive magnetron sputtering is considered to be a proper process because of homogeneity of microstructure, improvement of productivity and simplicity of independent control for several critical deposition parameters. The N2 is applied to reactive gas to make nitride system with transition metals which is much harder than only alloy systems. The acceleration voltage from 100W to 300W is controlled by direct current power with various deposition times. The coating layers are systemically investigated by structural identification (XRD), evaluation of microstructure (FE-SEM, TEM) and mechanical properties (Nano-indenter).

• Journal of the Korean Mathematical Society
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• v.59 no.3
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• pp.621-634
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• 2022

The scaled inverse of a nonzero element a(x) ∈ ℤ[x]/f(x), where f(x) is an irreducible polynomial over ℤ, is the element b(x) ∈ ℤ[x]/f(x) such that a(x)b(x) = c (mod f(x)) for the smallest possible positive integer scale c. In this paper, we investigate the scaled inverse of (xⁱ - x^j) modulo cyclotomic polynomial of the form Φ_p^s (x) or Φ_p^sq^t (x), where p, q are primes with p < q and s, t are positive integers. Our main results are that the coefficient size of the scaled inverse of (xⁱ - x^j) is bounded by p - 1 with the scale p modulo Φ_p^s (x), and is bounded by q - 1 with the scale not greater than q modulo Φ_p^sq^t (x). Previously, the analogous result on cyclotomic polynomials of the form Φ_2ⁿ (x) gave rise to many lattice-based cryptosystems, especially, zero-knowledge proofs. Our result provides more flexible choice of cyclotomic polynomials in such cryptosystems. Along the way of proving the theorems, we also prove several properties of {x^k}_k∈ℤ in ℤ[x]/Φ_pq(x) which might be of independent interest.

• Journal of Sensor Science and Technology
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• v.4 no.3
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• pp.60-70
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• 1995

Polycrystalline $Cd_{1-x}Zn_{x}S$ thin film were grown on slide glass(corning-2948) substrate using a chemical bath deposition (C.B.D) method. They were annealed at various temperature and X -ray diffraction patterns were measured by X-ray diffractometor in order to study $Cd_{1-x}Zn_{x}S$ polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS, ZnS sample annealed in $N_{2}$ gas at $550^{\circ}C$. It was found hexagonal structure which had the lattice constant $a_{0}\;=\;4.1364{\AA}$, $c_{0}\;=\;6.7129{\AA}$ in CdS and $a_{0}\;=\;3.8062{\AA}$, $c_{0}\;=\;6.2681{\AA}$ in ZnS, respectively. Hall effect on these sample was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity maximum allowable power dissipation and response time on these sample.

• Journal of the Mineralogical Society of Korea
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• v.20 no.4
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• pp.351-356
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• 2007

The crystal structure of $Li(ND_4)SO_4$ was analyzed by X-ray and neutron diffraction methods. The crystal is a deuterated $Li(NH_4)SO_4$ and one of the ferroelectric materials with hydrogen atoms. The crystal is orthorhombic at room temperature, $P2_1nb$, with lattice parameters of $a=5.2773(5)\;{\AA},\;b=9.1244(23)\;{\AA},\;c=8.7719(11)\;{\AA}$ and Z=4. Neutron intensity data were collected on the Four-Circle diffractometer (FCD) at HANARO in Korea Atomic Energy Research Institute and X-ray date were given by Prof. Y. Noda of Tohoku University Japan. The structure was refined by full-matrix least-square to final R value of 0.070 for 1450 observed reflections by X-ray diffraction and to final R=0.049 for 745 observed reflections by neutron diffraction. With X-ray data we obtained only one hydrogen atomic position. However, not only all atomic positions of four hydrogen atoms at $NH_4$ but also the occupation factors of D and H were refined with neutron data. From this results we obtained the average chemical structure of this sample, $LiND_{3.05}H_{0.95}SO_4$.

• Journal of the Korean Magnetics Society
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• v.9 no.3
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• pp.136-142
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• 1999

$Ni_{0.65}Zn_{0.35}Cu_{0.3}Fe_{1.7}O_4$ has been studied with x-ray diffraction, Mossbauer spectroscopy, and vibrating sample magnetometer. The crystal structure is found to be a cubic spinel with the lattice constant $a_0=8.403{\AA}$. Mossbauer spectra of have been taken at various temperatures ranging from 12 K to 665 K. as the temperature increases toward $T_N$ a systematic line broadening effect in the Mossbauer spectrum is observed and interpreted to originate from different temperature dependencies of the magenetic hyperfine fields at various iron sites. Also, by using binomial distribution equation we obtained the hyperfine fields of tetrahedral[A] and octahedral sites[B], $H_{hf}(A)=470\;kOe,\; H_{hf}(B0)=495 \;kOe,\; H_{hf}(B1)=485\;kOe, \;H_{hf}(B2)=453\;kOe,\; H_{hf}(B3)=424\;kOe,\; H_{hf}(B4)=390\;kOe,\; H_{hf}(Bavr)=451\;kOe$ respectively at room temperature. The isomer shift indicates that the iron ions are ferric at tetrahedral[A] and octahedral sites[B], respectively. The Neel temperature is determined to be $T_N=665\;K$. The results of the VSM data gave the magnetic moment and coercivity values of $M_S=66\; emu/g\;and\;H_C=36\;Oe$.

• Journal of the Korean Solar Energy Society
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• v.23 no.2
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• pp.59-70
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• 2003

A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615{\AA}$ and $11.025{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $5.01\times10^{17}cm^{-3}$ and $245cm^2/V{\cdot}s$ at 293K. respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T)=1.7998 eV-($8.7489\times10^{-4}$ eV/K)$T^2$/(T+335K). After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU},\;V_{Se},\;Cu_{int}$ and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2$/GaAs did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Korean Journal of Materials Research
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• v.21 no.2
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• pp.111-114
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• 2011

As a growth-template of ZnO nanorods (NR), a hexagonal $\beta-Ni(OH)_2$ nanosheet (NS) was synthesized with the low temperature hydrothermal process and its microstructure was investigated using a high resolution scanning electron microscope and transmission electron microscope. Zinc nitrate hexahydrate was hydrolyzed by hexamethylenetetramine with the same mole ratio and various temperatures, growth times and total concentrations. The optimum hydrothermal processing condition for the best crystallinity of hexagonal $\beta-Ni(OH)_2$ NS was determined to be with 3.5 mM at $95^{\circ}C$ for 2 h. The prepared $Ni(OH)_2$ NSs were two dimensionally arrayed on a substrate using an air-water interface tapping method, and the quality of the array was evaluated using an X-ray diffractometer. Because of the similarity of the lattice parameter of the (0001) plane between ZnO (wurzite a = 0.325 nm, c = 0.521 nm) and hexagonal $\beta-Ni(OH)_2$ (brucite a = 0.313 nm, c = 0.461 nm) on the synthesized hexagonal $\beta-Ni(OH)_2$ NS, ZnO NRs were successfully grown without seeds. At 35 mM of divalent Zn ion, the entire hexagonal $\beta-Ni(OH)_2$ NSs were covered with ZnO NRs, and this result implies the possibility that ZnO NR can be grown epitaxially on hexagonal $\beta-Ni(OH)_2$ NS by a soluble process. After the thermal annealing process, $\beta-Ni(OH)_2$ changed into NiO, which has the property of a p-type semiconductor, and then ZnO and NiO formed a p-n junction for a large area light emitting diode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.352-356
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• 2003

A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal am films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615\;{\AA}\;and\;11.025\;{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively, The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;:\;1.7998\;eV\;-\;(8.7489\;{\times}\;10^{-4}\;eV/K)T^2(T\;+\;335\;K)$. After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU}$, $V_{Se}$, $CU_{int}$, and $Se_{int}$, obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2/GaAs$ did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.