• 한국수산과학회지
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• 제7권3호
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• pp.105-114
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• 1974

멸치 젓갈의 숙성에 따른 미생물의 종류와 그 상(相)의 변화를 구명하기 위하여 생육 환경을 지배하는 염분농도와 pH의 변화 그리고 영양원인 질소화합물의 분해과정을 total-N, amino-N, protein-N, non-protein-N, TMA, VBN의 측정으로 고찰하였다. 산업적으로 젓갈 제조시기인 1973년 5월 부산 근해산 봄멸치를 인도산 암염율 $22\%$ (w/w) 가하여 $20\~25^{\circ}C$에서 숙성시키면서 약 6개월간 실험한 결과를 요약하면 다음과 같다. 1. viable cell 총균수로 본 lag phase는 약 20일간이었고 이후 급격히 증가하여 35일 경에 최고치 $5\times10^4$/g에 달하였으며 Stationary phase가 약 20일간 유지되었으며 lag phase가 긴 것이 특징이었다. 2. 숙성초기에는 ($0\~30$일) Pseudomonas, Achromobacter, Flavebacterium, Brevibacterium Pedioceccus Sarcina, Micrococcus와 중기에는 Saccharomyces, Torula가 분리되었으며 그 중에서 Pediococcus 가 가장 우세하였다. 3. pH값은 숙성이 진행될수록 하강하다가 100일 경에 $5.5\~5.6$에서 거의 일정하였다. 4. 염분 농도는 육질에서 10일경에 최고치 $21\%$에도 달하였다가 서서히 감소하여 $18\%$에 이르고 것에서는 감소하여 50일 경에 $28\%$를 유지하였다. 5. 질소 화합물의 변화는 육질에서는 total-N이 제조후 10일에 $3.3\%$ 최고치에 달하였다가 감소하여 100인 후에는 $2.8\%$로 거의 평형을 유지하였고 젓국에서는 증가하여 100일 경에 total-N $2.3\%$, non protein-N$1.8\%$, amino-N$1.1\%$에 달하여 완만하게 증가하고 젓죽 및 육질중의 TMA는 악 10일 후에 $9mg\%$에 달하여 평행을 이루다가 100일 이후에는 약간증가했고 VBN은 20일 후에 $80\%$에 달한 후 100일까지는 완만하게 변하다가 120일 후에는 다시 증가하여 젓국에서는 $160mg\%$, 육질에서 $140mg\%$ 었다.

• 터널과지하공간
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• 제1권2호
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• pp.218-228
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• 1991

Natural stress measurements have been made at two sites at the depth of 280m from surface by means of stress relief overcoring methods using three directonal deformation gage. Attempts have been made to determine the state of natural stress in the rock and provide useful basic data to investigate the stress distribution and the determination of yield zone around powerhouse cavern. The magnitude and the direction of the miximum principal stress obstained from in-situ stress measurements is -96.1kgf/$\textrm{cm}^2$ and N38$^{\circ}$W, N35$^{\circ}$W respectively. Vertical stresses are in approximately agreement with the theoretical value. The ratio of measured to theoretical stresses are 85% at two sites. The ratio of average horizontal to vertical stresses(k=($\sigma$h)ave/$\sigma$v is 1.07.

• 반도체디스플레이기술학회지
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• 제11권4호
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• pp.19-23
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• 2012

We report microbolometer characteristic with n-type and p-type amorphous silicon thin film. The n-type and p-type amorphous silicon thin films were made by PECVD. The electrical properties of n-type and p-type a-Si:H thin films were investigated as a function of doping gas flow rate. The doping gas used $B_2H_6/Ar$ (1:9) and $PH_3/Ar$ (1:9). In general, the conductivity of doping a-Si:H thin films increased as doping gas increase but the conductivity of a-Si:H thin films decreased as the doping gas increase because doping gas concentration increase led to dilution gas (Ar) increase as the same time. We fabricated an amorphous silicon microbolometer using surface micromachining technology. The fabricated microbolometer had a negative TCR of 2.3%. The p-type microbolometer had responsivity of $5{\times}10^4V/W$ and high detectivity of $3{\times}10^8cm(Hz)^{1/2}/W$. The p-type microbolometer had more detectivity than n-type for less noise value.

• 한국자기학회지
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• 제5권5호
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• pp.358-361
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• 1995

We have investigated the quasi-two-dimensional magnetism for the layered transition metal compound (C/sub n/H/sub 2n+1/NH/sub 3/)/sub 2/CuCl/sub 4/ (n=10, 14) in the high temperature regions by means of EPR (Electron Paramagnetic Resonance) and SQUID measurements. As a result, the magnetic transitions were reflected in the EPR linewidths and the magnetic suceptibilities in a sensitive manner. Fluctuations of the magnetic susceptibility and a similar variation of the .DELTA. g =(g/sub .parallel. -/g/sub .perp. /)g/sub .parallel. / value were also observed around the structural phase transition temperatures.

• 한국재료학회지
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• 제22권4호
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• pp.185-189
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• 2012

We report plasma-assisted molecular beam epitaxy of $In_XGa_{1-X}N$ films on c-plane sapphire substrates. Prior to the growth of $In_XGa_{1-X}N$ films, GaN film was grown on the nitride c-plane sapphire substrate by two-dimensional (2D) growth mode. For the growth of GaN, Ga flux of $3.7{\times}10^{-8}$ torr as a beam equivalent pressure (BEP) and a plasma power of 150 W with a nitrogen flow rate of 0.76 sccm were fixed. The growth of 2D GaN growth was confirmed by $in-situ$ reflection high-energy electron diffraction (RHEED) by observing a streaky RHEED pattern with a strong specular spot. InN films showed lower growth rates even with the same growth conditions (same growth temperature, same plasma condition, and same BEP value of III element) than those of GaN films. It was observed that the growth rate of GaN is 1.7 times higher than that of InN, which is probably caused by the higher vapor pressure of In. For the growth of $In_xGa_{1-x}N$ films with different In compositions, total III-element flux (Ga plus In BEPs) was set to $3.7{\times}10^{-8}$ torr, which was the BEP value for the 2D growth of GaN. The In compositions of the $In_xGa_{1-x}N$ films were determined to be 28, 41, 45, and 53% based on the peak position of (0002) reflection in x-ray ${\theta}-2{\theta}$ measurements. The growth of $In_xGa_{1-x}N$ films did not show a streaky RHEED pattern but showed spotty patterns with weak streaky lines. This means that the net sticking coefficients of In and Ga, considered based on the growth rates of GaN and InN, are not the only factor governing the growth mode; another factor such as migration velocity should be considered. The sample with an In composition of 41% showed the lowest full width at half maximum value of 0.20 degree from the x-ray (0002) omega rocking curve measurements and the lowest root mean square roughness value of 0.71 nm.

• 한국전자파학회논문지
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• 제22권2호
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• pp.162-172
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• 2011

본 논문에서는 WiMAX 주파수 대역(2.3~2.7 GHz)에서 동작하는 4 W급 소형 전력증폭기 모듈을 설계, 제작하였다. 본 연구에 사용된 능동소자는 최근 발표된 Triquint사의 GaN HEMT 소자(Bare-chip)이다. 본 논문에서는 전력증폭기를 설계하기 위하여, 먼저 자체 제작한 조정용 지그(jig)를 사용하여 상용 칩의 최적 임피던스를 실험을 통해 추출하였으며, 추출한 임피던스를 적용한 EM-simulation으로 F급 설계를 행하였다. 소형의 패키지(모듈)에 집적하고 정합하기 위하여 인덕터와 커패시터는 각각 spiral inductor, interdigital capacitor로 구현하였다. 소형으로($4.4{\times}4.4\;mm^2$) 패키지된 전력증폭기 모듈의 경우, 출력은 36 dBm, 효율은 50 % 그리고 2차 및 3차 고조파에 대한 고조파 억제는 40 dBc 이상의 특성을 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.566-569
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• 2002

The $(Sr_{0.9}Ca_{0.1})TiO_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method. The maximum dielectric constant of SCT thin film is obtained by annealing at $600[^{\circ}C]$. The temperature properties of the dielectric loss have a value within 0.02 in temperature ranges of $-80{\sim}+90[^{\circ}C]$. The capacitance characteristics had a stable value within ${\pm}4[%]$. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz].

• 소성∙가공
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• 제14권7호
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• pp.635-641
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• 2005

The crystal structure of magnesium was hexagonal close-packed (HCP), so its formability was poor at room temperature. But formability was improved in high temperature with increasing of the slip planes. Purpose of this paper was to know about the mechanical properties of magnesium alloy (AZ31B), before warm and hot forming process. The mechanical properties were defined by the tension and compression tests in various temperature and strain-rate. As the temperature was increased, yield·ultimate strength, K-value, work hardening exponent (n) and anisotropy factor (R) were decreased. But strain rate sensitivity (m) was increased. As strain-rate increased, yield·ultimate strength, K-value, and work hardening exponent (n) were increased. Also, microstructures of grains fined away at high strain-rate. These results would be used in simulations and manufacturing factor fer warm and hot forming process.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2005년도 춘계학술대회 논문집
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• pp.69-72
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• 2005

The crystal structure of magnesium is hexagonal close-packed (HCP), so its formability is poor at room temperature. But formability is improved in high temperature with increasing of the slip planes. Purpose of this paper is to know about the mechanical properties of magnesium alloy (AZ31B), before warm and hot forming process. The mechanical properties were defined by the tension and compression tests in various temperature and strain-rate. As the temperature is increased, yield${\cdot}$ultimate strength, K-value, work hardening exponent (n) and anisotropy factor (R) are decreased. But strain rate sensitivity (m) is increased. As strain-rate increased, yield${\cdot}$ultimate strength, K-value, and work hardening exponent (n) are increased. Also, microstructures of grains fine away at high strain-rate. These results will be used in simulations and manufacturing factor for warm and hot forming process.

• 한국표면공학회지
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• 제46권4호
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• pp.168-174
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• 2013

In this study, low-cost, high-speed deposition, excellent processability, high mechanical strength and electrical conductivity, chemical stability and corrosion resistance of stainless steel to meet the obsessive-compulsive (0.1 mm or less) were selected CrN thin film. new price reduction to sputter deposition causes - the possibility of sublimation source for inductively coupled plasma Cr rods were attempts by DC bias. 0.6 Pa Ar inductively coupled plasmas of 2.4 MHz, 500 W, keeping Cr Rod DC bias power 30 W (900 V, 0.02 A) is applied, $N_2$ flow rate of 0.5, 1.0, 1.5 sccm by varying the characteristics of were analyzed. $N_2$ flow rate increases, decreases and $Cr_2N$, CrN was found to increase. In addition to corrosion resistance and contact resistance, corrosion resistance, electrical conductivity was evaluated. corrosion current density than $N_2$ 0 sccm was sure to rise in all, $N_2$ 1 sccm at $4.390{\times}10^{-7}$ (at 0.6 V) $A{\cdot}cm^{-2}$, respectively. electrical conductivity process results when $N_2$ 1 sccm 28.8 $m{\Omega}/cm^2$ with the lowest value of the contact resistance was confirmed that came out. The OES (SQ-2000) and QMS (CPM-300) using a reactive deposition process to add $N_2$ to maintain a uniform deposition rate was confirmed that.