• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.15 no.6
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• pp.231-238
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• 2015

In this paper, we have studied a sheet resistance property of N- and P-type thin films deposited on ITO glass by use of RF magnetron sputtering. The N-type samples which has the deposition condition of 150W RF power, shows the highest current value, and the samples deposited for 15 minutes shows a better Ohmic contact property. As the substrate temperature, RF power and deposition time are increased, the sheet resistance of the samples is increased, and the low sheet resistance sample shows a better I-V property. The P-type samples shows the highest current value by 150W RF power condition as similar as N-type samples. and the samples deposited for 20 minutes shows a better ohmic contact property. The sheet resistance of the both types samples is increased as increasing RF power and deposition time.

• Economic and Environmental Geology
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• v.4 no.4
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• pp.225-234
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• 1971

With the advance of civilization and steadily increasing population rivalry and competition for the use of the sewage, culverts, farm irrigation and control of various types of flood discharge have developed and will be come more and more keen in the future. The author has tried to calculated a formula that could adjust these conflicts and bring about proper solutions for many problems arising in connection with these conditions. The purpose of this study is to find out effective sewage, culvert, drainage, farm irrigation, flood discharge and other engineering needs in the Taegu area. If demands expand further a new formula will have to be calculated. For the above the author estimated methods of control for the probable expected rainfall using a formula based on data collected over a long period of time. The formula is determined on the basis of the maximum daily rainfall data from 1921 to 1971 in the Taegu area. 1. Iwai methods shows a highly significant correlation among the variations of Hazen, Thomas, Gumbel methods and logarithmic normal distribution. 2. This study obtained the following major formula: ${\log}(x-2.6)=0.241{\xi}+1.92049{\cdots}{\cdots}$(I.M) by using the relation $F(x)=\frac{1}{\sqrt{\pi}}{\int}_{-{\infty}}^{\xi}e^{-{\xi}^2}d{\xi}$. ${\xi}=a{\log}_{10}\(\frac{x+b}{x_0+b}\)$ ($-b<x<{\infty}$) ${\log}(x_0+b)=2.0448$ $\frac{1}{a}=\sqrt{\frac{2N}{N-1}}S_x=0.1954$. $b=\frac{1}{m}\sum\limits_{i=1}^{m}b_s=-2.6$ $S_x=\sqrt{\frac{1}{N}\sum\limits^N_{i=1}\{{\log}(x_i+b)\}^2-\{{\log}(x_0+b)\}^2}=0.169$ This formule may be advantageously applicable to the estimation of flood discharge, sewage, culverts and drainage in the Taegu area. Notation for general terms has been denoted by the following. Other notations for general terms was used as needed. $W_{(x)}$ : probability of occurranec, $W_{(x)}=\int_{x}^{\infty}f_{(n)}dx$ $S_{(x)}$ : probability of noneoccurrance. $S_{(x)}=\int_{-\infty}^{x}f_(x)dx=1-W_{(x)}$ T : Return period $T=\frac{1}{nW_{(x)}}$ or $T=\frac{1}{nS_{(x)}}$ $W_n$ : Hazen plot $W_n=\frac{2n-1}{2N}$ $F_n=1-W_x=1-\(\frac{2n-1}{2N}\)$ n : Number of observation (annual maximum series) P : Probability $P=\frac{N!}{{t!}(N-t)}F{_i}^{N-t}(1-F_i)^t$ $F_n$ : Thomas plot $F_n=\(1-\frac{n}{N+1}\)$ N : Total number of sample size $X_l$ : $X_s$ : maximum, minumum value of total number of sample size.

• Transactions of Materials Processing
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• v.27 no.1
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• pp.48-53
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• 2018

Aluminum nitride (AlN) is used by the semiconductor industry that has requirements for high thermal conductivity. The theoretical thermal conductivity of single crystal AlN is 320W/mK. Whereas, the values measured for polycrystalline AlN ceramics range from 20 W/mK to 280 W/mK. The variability is strongly dependent upon the purity of the starting materials and non-uniform dispersibility of the sintering additive. The conventional AlN sintering additive used yttria ($Y_2O_3$), but the dispersibility of the powder in the mixing process was important. In this study, we investigated the mechanical and thermal conductivity of yttrium nitrate ($Y(NO_3)_3{\cdot}6H_2O$), as a sintering additive in order to improve the dispersibility of $Y_2O_3$. The sintering additives content was in the range of 2 to 4.5wt.%. The density of AlN gradually increased with increasing contents of sintering additive and the flexural strength gradually increased as well. The flexural strength of the sintered body containing 4 wt% of $Y_2O_3$ and $Y(NO_3)_3{\cdot}6H_2O$ was 334.1 MPa and 378.2 MPa, respectively. The thermal conductivities were 189.7W/mK and 209.4W/mK, respectively. In the case of hardness, there was only a slight difference and the average value was about 10 GPa. Therefore, densification, density and strength values were found to be proportional to its content. It was confirmed that AlN using $Y(NO_3)_3{\cdot}6H_2O$ displayed relatively higher thermal conductivity and mechanical properties than the $Y_2O_3$.

• 한국해양학회지
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• v.1 no.1_2
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• pp.1-6
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• 1966

A latitudinal, differential pH distribution is observed in the Northeastern Pacific Ocean with a pH range of 8.15 at high latitude (42 N) to 8.29 at low latitude (23 N). These pH values are generally greater than the calculated equilibrium pH with respect to atmospheric carbon dioxide. If we assume that the calculated equilibrium pH values ae valid, then the surface waters are undersaturated with respect to the atmospheric carbon dioxide during April to June 1966. A high surface pH value of about 8.26 was observed immediately south of the SubarcticBoundary zone near 170 W. This value differs from the equilibration pH by as much as 0.1 unit.

• Journal of Soil and Groundwater Environment
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• v.7 no.3
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• pp.33-44
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• 2002

A field technique for assessing the transmissive fractures in an aquifer was applied to a fractured rock formation in Youngchun area Korea. Geological mapping and detailed acoustic borehole teleview(BHTV) logging were performed to obtain information about the fractures. The study area consists predominantly of two types of fractures. The fracture sets of low angle partings such as bedding and sheeting plains have strike N70-80$^{\circ}$W, 25$^{\circ}$-30$^{\circ}$SW and N3S$^{\circ}$W, 12$^{\circ}$NE, respectively. In areas of high fractures, on the other hand, the major fracture sets show strike N80$^{\circ}$W and dip 70$^{\circ}$-85$^{\circ}$SW, N10$^{\circ}$E.85$^{\circ}$SE in sedimentry rocks, N40-50$^{\circ}$E.85$^{\circ}$SE/85$^{\circ}$NE, N70$^{\circ}$E.80$^{\circ}$SE, and N7$^{\circ}$-75$^{\circ}$W.80$^{\circ}$SW in granites and volcanic rocks. Injection tests have been performed to identify discrete production zones and quantify the vertical distribution of hydraulic conductivity. The calculated hydraulic conductivities range from 3.363E-10 to 2.731E-6, showing that the difference between maximum and minimum value is four order of magnitude. Dominant section in hydraulic conductivity is extensively fractured. Geophysical logging was carried out to clarify characterization of the distribution of fracture zones. Transmissive fractures were evaluated through the comparison of the results obtained by each method. The temperature logs appeared to be a good indicator that can distinguish a high transmissive fractures from a common fractures in hydraulic conductivity. In numerous cases, evidence of fluid movement was amplified in the temperature gradient log. The fracture sets of N70-80$^{\circ}$W.60-85$^{\circ}$NE/SW N75-80$^{\circ}$W.25-30$^{\circ}$SW, N50-64$^{\circ}$W.60-85$^{\circ}$NE, N35-45$^{\circ}$E.65-75$^{\circ}$SE, and N65-72$^{\circ}$E.80$^{\circ}$SE/60$^{\circ}$NW were idenfied as a distinct transmissive fractures through the results of each tests.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.5
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• pp.46-54
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• 1984

A silicon-gate n-well CMOS process with 3 $\mu$m gate length was developed and its possibility for the applications was discussed,. Threshold voltage was easily controlled by ion implantation and 3-$\mu$m gate length with 650 $\AA$ oxide shows ignorable short channel effect. Large value of Al-n+ contact resistance is one of the problems in fabrications of VLSI circuits. Transfer characteristics of CMOS inverter is fairly good and the propagation delay time per stage in ring oscillator with layout of (W/L) PMOS /(W/L) NMOS =(10/5)/(5/5) is about 3.4 nsec. catch-up occurs on substrate current of 3-5 mA in this process and critically dependent on the well doping density and nt-source to n-well space. Therefore, research, more on latch-up characteristics as a function of n-well profile and design rule, especially n+-source to n-well space, is required.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2004.10a
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• pp.256-259
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• 2004

In the present study, AZ31B sheets has a bad formability in room temperature, but the formability is improved significantly as increasing the temperature because of rolled magnesium alloy sheet has a hexagonal closed packed structure (HCP) and a plastic anisotropy. In this paper, after tensile test in various temperatures, strain rate, show the tensile mechanical properties, yield and ultimate strength, K-value, work hardening exponent(n), strain rate sensitivity(m). As temperature increased, yield, ultimate strength and K-value, work hardening exponent(n) are decreased but strain rate sensitivity(m) is increased. As cross-head-speed increased, yield, ultimate strength and K-value, work hardening exponent(n) are increased. And according to the temperature, how change the plastic anisotropy factor R. In addition, we observed how temperatures and cross-head-speed effect on microstructure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04a
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• pp.50-54
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• 2002

Influences of bending strain on the critical current ($I_c$) in Ag-sheathed Bi-2223 superconducting tapes at 77K were investigated. The effect of bending mode on the bending strain characteristics was discussed in viewpoints of sample geometry, n-value and damage morphology. Especially, in this paper, we reported the $I_c$ behavior in Ag alloy sheathed Bi-2223 multifilamentary superconducting tapes under hard bending. As a result, $I_c$ degradation behavior of the hard bending appeared remarkably than the case of easy bending, but it did not influence greatly on the n-value.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.3
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• pp.637-647
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• 2010

This paper suggested an algorithm that uses a multiplier, 'w bit $\times$ w bit = 2w bit', to process $\frac{N}{D}$ integer division of 2w bit integer N and w bit integer D. An algorithm suggested of the research, when the divisor D is '$D=0.d{\times}2^L$, 0.5 < 0.d < 1.0', approximate value of $\frac{1}{D}$, '$1.g{\times}2^{-L}$', which satisfies '$0.d{\times}1.g=1+e$, e < $2^{-w}$', is defined as over reciprocal number and the dividend N is segmented in small word more than 'w-3' bit, and partial quotient is calculated by multiplying over reciprocal number in each segmented word, and quotient of double precision integer division is evaluated with sum of partial quotient. The algorithm suggested in this paper doesn't require additional correction, because it can calculate correct reciprocal number. In addition, this algorithm uses only multiplier, so additional hardware for division is not required to implement microprocessor. Also, it shows faster speed than the conventional SRT algorithm. In conclusion, results from this study could be used widely for implementation SOC(System on Chip) and etc. which has been restricted to microprocessor and size of the hardware.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.84-90
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• 2005

The influence of plasma parameters on the growth of $In_{0.2}Ga_{0.8}N/GaN$ heterostructures has been investigated using plasma-assisted molecular beam epitaxy. Since plasma ejects plenty of energetic particles with different energy levels and flux density at various rf power levels, plasma modulated both growth rate and optical properties significantly. For instance, surface roughness and the emission spectrum of photoluminescence were degraded at low and high rf power. According to sharp interfaces between epitaxial films and strong peaks observed from photoluminescence spectra, our experimental setup presented optimal operation range of rf powers at around 400W. The phenomena could be explained by the presence of energetic particles modulating the rate of plasma stimulated desorption and surface diffusion, and energetic particles exceeding critical value resulted in the incorporation of defects at subsurface. The optimal rf power regime increased by 100W for $In_{0.2}Ga_{0.8}N/GaN$ growth in comparison with GaN. The effects of rf power were discussed in conjunction with kinetic processes being stimulated by energetic particles.