• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.124-124
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• 2010

Much interest has been focused on InGaN-based materials and their quantum structures due to their optoelectronics applications such as light emitting diode (LED) and photovoltaic devices, because of its high thermal conductivity, high optical efficiency, and direct wide band gap, in spite of their high density of threading dislocations. Build-in internal field-induced quantum-confined Stark effect in InGaN/GaN quantum well LED structures results in a spatial separation of electrons and holes, which leads to a reduction of radiative recombination rate. Therefore, many growth techniques have been developed by utilizing lateral over-growth mode or by inserting additional layers such as patterned layer and superlattices for reducing threading dislocations and internal fields. In this work, we investigated various characteristics of InGaN multiple quantum wells (MQWs) LED structures grown on selectively wet-etched porous (SWEP) GaN template layer and compared with those grown on non-porous GaN template layer over c-plane sapphire substrates. From the surface morphology measured by atomic force microscope, high resolution X-ray diffraction analysis, low temperature photoluminescence (PL) and PL excitation measurements, good structural and optical properties were observed on both LED structures. However, InGaN MQWs LED structures grown on SWEP GaN template layer show relatively low In composition, thin well width, and blue shift of PL spectra on MQW emission. These results were explained by rough surface of template layer, reduction of residual compressive stress, and less piezoelectric field on MQWs by utilizing SWEP GaN template layer. Better electrical properties were also observed for InGaN MQWs on SWEP GaN template layer, specially at reverse operating condition for I-V measurements.

• 한국지하수토양환경학회지:지하수토양환경
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• 제25권2_spc호
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• pp.1-15
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• 2020

Monitoring and assessing terminal electron accepting processes (TEAPs) are one of the most important steps to remediate contaminated sites via various in-situ techniques. TEAPs are a part of the microbial respiration reactions. Microorganisms gain energy from these reactions and reduces pollutants. Monitoring TEAPs enables us to predict degradability of contaminants and degradation rates. In many countries, TEAPs have been used for characterization of field sites and management of groundwater wells. For instance, US Environmental Protection Agency (EPA) provided strategies for groundwater quality and well management by applying TEAPs monitoring. Denmark has also constructed TEAPs map of local unit area to develop effective groundwater managing system, particularly to predict and assess nitrogen contamination. In case of Korea, although detailed soil survey and groundwater contamination assessment have been employed, site investigation guidelines using TEAPs have not been established yet. To better define TEAPs in subsurface environments, multiple indicators including ion concentrations, isotope compositions and contaminant degradation byproducts must be assessed. Furthermore, dissolved hydrogen concentrations are regarded as significant evidence of TEAPs occurring in subsurface environment. This review study introduces optimal sampling techniques of groundwater and dissolved hydrogen, and further discuss how to assess TEAPs in contaminated subsurface environments according to several contamination scenarios.

• Geomechanics and Engineering
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• 제18권2호
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• pp.205-213
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• 2019

A calculation model of reservoir pressure field distribution around multiple production wells in a heavy oil reservoir is established, which can overcome the unreasonable uniform-pressure value calculated by the traditional mathematical model in the multiwell mining areas. A calculating program is developed based on the deduced equations by using Visual Basic computer language. Based on the proposed mathematical model, the effects of drainage rate and formation permeability on the distribution of reservoir pressure are studied. Results show that the reservoir pressure drops most at the wellbore. The farther the distance away from the borehole, the sparser the isobaric lines distribute. Increasing drainage rate results in decreasing reservoir pressure and bottom-hole pressure, especially the latter. The permeability has a significant effect on bottom hole pressure. The study provides a reference basis for studying the dynamic pressure field distribution before thermal recovery technology in heavy oilfield and optimizing construction parameters.

• 한국수자원학회:학술대회논문집
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• 한국수자원학회 2020년도 학술발표회
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• pp.32-32
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• 2020

하나의 수계 또는 용수구역 내에서 작물생육기간 동안 지하수자원 수요량의 집중적인 증가로 인해 지역적 지하수 고갈이 발생하여 농작물 피해가 발생하고 있으며 과잉양수로 인한 지하수위 하강으로 사용자간 갈등도 빈번하다. 또한, 기후변화로 인해 극한기후인 가뭄의 잦은 발생은 이러한 현상을 가속화 한다. 지하수 산출성이 좋은 대수층의 공간적 분포는 복잡한 지질구조로 인해 균일하지 않으며 같은 대수층 내에서도 양수 위치에 따라 산출성은 다르게 나타난다. 이러한 지하수 수요와 공급 및 대수층 분포로 인한 지하수자원 불균형의 해소를 위해 지하수가 풍부한 지역에서 부족한 지역으로 지하수를 공급하는 방법을 적용할 수 있다. 이때 기술적용 지역의 지하수 사용 상황 및 공급 가능량을 정량적으로 평가하고 이를 기반으로 지하수 공급을 제어하는 것이 매우 중요하다. 지하수자원의 수요-공급 불균형이 발생할 때 즉각적으로 대응하기 위해서는 실시간으로 지하수 현황을 감시하고 이를 기반으로 공급 가능량을 산정할 필요가 있으며 이는 정보통신기술(Information and Communication Technology, ICT)에 기반한 관정연계관리체계(Well Network System, WNS)를 구성하는 기술 중 하나인 관정군집제어 기술로 구현될 수 있다. 수계 내에 설치된 기존의 양수정과 새롭게 추가된 관측정들을 4G LTE 네트워크를 통해 하나의 관정군으로 묶고 중앙 서버를 통한 자료 분석 및 양수 펌프 제어를 통해 대수층의 공급 능력과 사용자의 수요 현황에 따른 지하수자원의 체계적 분배를 구현하고자 하였다. 관정군집제어는 관정별 지하수위 및 양수정 양수량을 실시간으로 관측하고 이를 분석서버에 전송하여 해당 지하수계의 공급 가능량 및 인접관정 간섭 등을 분석하여 양수정의 펌프를 실시간으로 제어하고 양수된 지하수를 수요 지역으로 이송한다. 본 연구를 통해 관정군집제어 기술의 구현에 필요한 구성요소를 정의하고 이에 대한 구현 방법을 기술하여 WNS를 구성하는 하나의 요소기술 모델로 제시하고자 하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.313-313
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• 2012

In recent years there have been many studies of InGaN/GaN based light emitting diodes (LEDs) in order to progress the performance of luminescence. Many previous literatures showed the performance of LEDs by changing the LED structures and substrates. However, the studies carried out by the researchers so far were very complicated and sometimes difficult to apply in practice. Therefore, we propose one simple method of changing the thickness and the numbers of multiple quantum wells (MQWs) in order to optimize their effects. In our research, we investigated electrical and optical properties by changing the well thickness and the number of quantum well (QW) pair in LED structures by growing the structure -inch Si (111) wafer. We defined the samples from LED_1 to LED_3 according to MQW structure. Samples LED_1, LED_2 and LED_3 consist of 5-pair InGaN/GaN (3.5 nm/ 4.5 nm), 5-pair InGaN/GaN (3 nm/4.5 nm) and 7-pair InGaN/GaN (3.5 nm/4.5 nm), respectively. We characterized electrical and optical properties by using electroluminescence (EL) measurement. Also, Efficiency droop was analyzed by calculating external quantum efficiency (EQE) with varying injection current. The EL spectra of three samples show different emission wavelength peaks, FWHM and the blueshift of wavelength caused by screening the internal electric field because of the effect of different MQW structure. The results of optical properties show that the LED_2 sample reduce the internal electric field in QW than LED_1 from EL spectra. the increase in the number of QW pairs reduces the strain and increase the In composition in MQW. And, the points of efficiency droop's peak show different trend from LED_1 to LED_3. It is related with the carrier density in active region. Thus, from the results of experiments, we are able to achieve high performance LEDs and a reduction of efficiency droop and emission wavelength blueshift by optimizing MQWs structure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.172-173
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• 2012

Currently GaN based LED is known to show high internal or external efficiency at low current range. However, this LED operation occurs at high current range and in this range, a significant performance degradation known as 'efficiency droop' occurs. Auger process, carrier leakage process, field effect due to lattice mismatch and thermal effects have been discussed as the causes of loss of efficiency, and these phenomena are major hindrance in LED performance. In order to investigate the main effects of efficiency loss and overcome such effects, it is essential to obtain relative proportion of measurements of internal quantum efficiency (IQE) and various radiative and nonradiative recombination processes. Also, it is very important to obtain radiative and non-radiative recombination times in LEDs. In this research, we measured the IQE of InGaN/GaN multiple quantum wells (MQWs) LEDs with PSS and Planar substrate using modified ABC equation, and investigated the physical mechanism behind by analyzing the emission energy, full-width half maximum (FWHM) of the emission spectra, and carrier recombination dynamic by time-resolved electroluminescence (TREL) measurement using pulse current generator. The LED layer structures were grown on a c-plane sapphire substrate and the active region consists of five 30 ${\AA}$ thick In0.15Ga0.85N QWs. The dimension of the fabricated LED chip was $800um{\times}300um$. Fig. 1. is shown external quantum efficiency (EQE) of both samples. Peak efficiency of LED with PSS is 92% and peak efficiency of LED with planar substrate is 82%. We also confirm that droop of PSS sample is slightly larger than planar substrate sample. Fig. 2 is shown that analysis of relation between IQE and decay time with increasing current using TREL method.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.279.2-279.2
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• 2016

InGaN/GaN multiple quantum wells (MQWs) have been attracted much attention as light-emitting diodes (LEDs) in the visible and UV regions. Particularly, quantum efficiency of green LEDs is decreased dramatically as approaching to the green wavelength (~500 nm). This low efficiency has been explained by quantum confined Stark effect (QCSE) induced by piezoelectric field caused from a large lattice mismatch between InGaN and GaN. To improve the quantum efficiency of green LED, several ways including epitaxial lateral overgrowth that reduces differences of lattice constant between GaN and sapphire substrates, and non-polar method that uses non- or semi-polar substrates to reduce QCSE were proposed. In this study, graded short-period InGaN/GaN superlattice (GSL) was grown below the 5-period InGaN/GaN MQWs. InGaN/GaN MQWs were grown on the patterned sapphire substrates by vertical-metal-organic chemical-vapor deposition system. Five-period InGaN/GaN MQWs without GSL structure (C-LED) were also grown to compare with an InGaN/GaN GSL sample. The luminescence properties of green InGaN/GaN LEDs have been investigated by using photoluminescence (PL) and time-resolved PL (TRPL) measurements. The PL intensities of the GSL sample measured at 10 and 300 K increase about 1.2 and 2 times, respectively, compared to those of the C-LED sample. Furthermore, the PL decay of the GSL sample measured at 10 and 300 K becomes faster and slower than that of the C-LED sample, respectively. By inserting the GSL structures, the difference of lattice constant between GaN and sapphire substrates is reduced, resulting that the overlap between electron and hole wave functions is increased due to the reduced piezoelectric field and the reduction in dislocation density. As a results, the GSL sample exhibits the increased PL intensity and faster PL decay compared with those for the C-LED sample. These PL and TRPL results indicate that the green emission of InGaN/GaN LEDs can be improved by inserting the GSL structures.

• 마이크로전자및패키징학회지
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• 제25권3호
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• pp.1-5
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• 2018

본 연구에서는 InGaN/GaN multi quantum well (MQW)에서 Indium (In) 도핑효과에 따른 광전기화학적 특성을 관찰하였다. 기판으로는 Sapphire을 사용하였고, 각 Quantum well (QW)을 구성하고 있는 InGaN의 조성을 다르게 하였다. 투과도 측정 결과 일정한 In 조성을 가진 InGaN/GaN MQW에 비해 각 QW의 In 조성을 다르게 한 InGaN/GaN MQW에서 흡수도가 향상되는 것을 확인할 수 있었다. 이는 각각 다른 In 조성을 가진 InGaN 층이 더 넓은 영역의 스펙트럼 에너지를 가지는 빛을 흡수하기 때문인 것으로 생각된다. 광학적 특성을 평가하기 위해 진행한 상온 photoluminescence (PL) 실험을 진행한 결과, 역시 다양한 In 조성을 가진 InGaN/GaN MQW이 더 넓은 파장에서 발광이 나타나는 것을 확인할 수 있었다. 이들 샘플에 대한 광전기화학적 특성평가를 통하여, gradation In 조성을 가지고 있는 InGaN/GaN MQW이 일정한 In 조성을 가지는 InGaN/GaN MQW에 비해 광전기화학적 물분해 능력이 월등히 향상됨을 확인하였다.

• 대한전자공학회논문지SD
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• 제48권7호
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• pp.10-16
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• 2011

본 논문에서는 고효율 고출력 무분극 GaN LED의 구현을 위하여 Mg이 도핑된 GaN spacer층 및 GaN quantum barrier(QB)층을 삽입한 구조를 제안하였다. 제안한 구조에 대한 물리적 해석을 위하여 일반적인 무분극 LED 에피구조와 본 연구에서 제안한 p-GaN spacer층 및 p-GaN QB층이 삽입된 무분극 LED 에피구조에 대해 상용화된 $SimuLED^{TM}$ 시뮬레이터를 이용하여 전기적/광학적 특성을 비교 분석하였다. 실험 결과, 본 연구에서 제안한 무분극 LED는 20 mA의 전류주입 하에서 동작전압($V_f$)이 일반적인 무분극 LED에 비해 약 3.7% 감소된 3.67 V의 전기적 특성을 갖는 것을 확인하였고, 광출력은 약 7% 향상된 2.13 mW의 광학적 특성을 갖는 구조임을 확인하였다. 또한, 내부양자효율(Internal quantum efficiency, IQE)과 광방출세기(emission peak intensity) 역시 각각 9.1% 및 170% 향상된 우수한 특성을 갖는 에피구조임을 확인하였다.

• 지구물리
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• 제3권2호
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• pp.113-126
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• 2000

난지도 매립장의 안정화에 따른 지질환경 변화를 조사하기 위하여 탐사가 가능한 제 2 매립장 상부와 한강변에 연한 매립지의 기저지역에서 중력, 자력, 쌍극자-쌍극자, 자연전위 탐사를 수행하였다. 제 2 매립장 상부에서 수행한 중력과 자력 탐사 결과를 4 년전의 선행연구 결과와 비교하면 매립장 중앙 부분에서 밀도구배가 작아지고 복잡한 양상을 보였던 자력이상 분포가 많이 단순해진 것으로 나타난다. 이는 매립지의 안정화과정에서 침하와 복토작업이 반복되면서 매립물의 다짐작용이 순조롭게 진행되고 있는 것으로 보인다. 제 1 매립장 차수벽 밖에서 실시한 쌍극자-쌍극자 전기탐사와 자연전위탐사 결과에는 제 1 매립장 주위의 불량한 탐사환경에 의한 영향이 많이 나타난다. 제 2 매립장의 차수벽 안과 밖에서 실시한 쌍극자-쌍극자 전기탐사 결과를 비교하면 차수벽이 침출수를 어느 정도 차단하는 효과를 볼 수 있다. 제 2 매립장의 상부와 사면에서 수행한 자연전위탐사에서는 특별한 자연전위 이상은 나타나지 않으나, 하부의 차수벽 내부에서 수행한 자연전위 탐사 결과에는 침출수를 모으는 집수정의 영향이 크게 나타난다.