• Title/Summary/Keyword: multiple wells

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Multi-Body Contact Analysis and Structural Design Optimization of Bend Restrictors for Subsea Pipelines (심해저 파이프라인과 굽힘 제한 장치의 다중물체 접촉 해석을 통한 구조 최적설계)

  • Noh, Jungmin;Ha, Youn Doh
    • Journal of the Society of Naval Architects of Korea
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    • v.55 no.4
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    • pp.289-296
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    • 2018
  • The offshore subsea platforms are connected to subsea pipelines to transport gas/oil from wells. The pipe is a multilayered structure of polymer and steel for compensating both flexibility and strength. The pipe also requires reinforcement structures to endure the extreme environmental conditions. A vertebrae structure of bend restrictors is one of the reinforcement structures installed to protect the subsea pipe from excessive bending deformations. In this study, structural behaviors of the subsea pipeline with bend restrictors are investigated by the multi-body contact analysis in Abaqus 6.14-2. Contact forces of each bend restrictor extracted from the multi-body contact analysis can be boundary conditions for topology design optimization in Altair Hyperworks 13.0 Hypermesh-Optistruct. Multiple design constraints are considered to obtain a manufacturable design with efficient material usage. Through the multi-body contact analysis with optimized bend restrictors, it is confirmed that the bending performance of the optimized design is enhanced.

Single Mode Lasing Characteristics in Multimode Interferometer-Coupled Semiconductor Square Ring Resonators (다중모드 간섭기를 이용한 반도체 이중사각형 링 공진기에서의 단일모드 발진 특성)

  • Jeong, Dal-Hwa;Moon, Hee-Jong;Hyun, Kyung-Sook
    • Korean Journal of Optics and Photonics
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    • v.20 no.1
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    • pp.41-47
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    • 2009
  • We report the spectral characteristics of Multimode Interferometer (MMI)-coupled semicondoctor square ring resonators. The epitaxial layers of the proposed semiconductor ring resonator consists of $1.55{\mu}m$ GaInAsP-InP multiple quantum wells. The lasing characteristics were observed by varying the structure parameters of the MMI-coupled square ring resonators. It is concluded that the MMI-coupled scheme selects a single spectral lasing mode in the double square ring cavities.

Fabrication of a Parallel Polymer Cantilever to Measure the Contractile Force of Drug-treated Cardiac Cells (약물처리된 심장세포의 세포 수축력 측정을 위한 병렬 폴리머 캔틸레버 제작)

  • Kim, Dong-Su;Lee, Dong-Weon
    • Journal of Sensor Science and Technology
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    • v.29 no.2
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    • pp.100-104
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    • 2020
  • Thus far, several in vivo biosensing platforms have been proposed to measure the mechanical contractility of cultured cardiomyocytes. However, the low sensitivity and screening rate of the developed sensors severely limit their practical applications. In addition, intensive research and development in cardiovascular disease demand a high-throughput drug-screening platform based on biomimetic engineering. To overcome the drawbacks of the current state-of-the-art methods, we propose a high-throughput drug-screening platform based on 16 functional high-sensitivity well plates. The proposed system simulates the physiological accuracy of the heart function in an in vitro environment. We fabricated 64 cantilevers using highly flexible and optically transparent silicone rubber and placed in 16 independent wells. Nanogrooves were imprinted on the surface of the cantilever to promote cell alignment and maturation. The adverse effects of the cardiovascular drugs on the cultured cardiomyocytes were systematically investigated. The 64 cantilevers demonstrated a highly reliable and reproducible mechanical contractility of the drug-treated cardiomyocytes. Real-time high-throughput screening and simultaneous evaluation of the cardiomyocyte mechanical contractility under multiple drugs verified that the proposed system could be used as an efficient drugtoxicity test platform.

Recent Progress of Nonpolar and Semipolar GaN on Sapphire Substrates for the Next Generation High Power Light Emitting Diodes

  • Lee, Seong-Nam
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.20.2-20.2
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    • 2011
  • III-nitrides have attracted much attention for optoelectronic device applications whose emission wavelengths ranging from green to ultraviolet due to their wide band gap. However, due to the strong polarization properties of conventional c-plane III-nitrides, the built-in polarization-induced electric field limits the performance of optical devices. Therefore, there has been a renewed interest in the growth of nonpolar III-nitride semiconductors for polarization free heterostructure optoelectronic and electronic devices. However, the crystal and the optical quality of nonpolar/semipolar GaN have been poorer than those of conventional c-plane GaN, resulting in the relative poor optical and electrical properties of light emitting diodes (LEDs). In this presentation, I will discuss the growth and characterization of high quality nonpolar a-plane and semipolar (11-22) GaN and InGaN multiple quantum wells (MQWs) grown on r- and m-plane sapphire substrates, respectively, by using metalorganic chemical vapor deposition (MOCVD) without a low temperature GaN buffer layer. Especially, the epitaxial lateral overgrowth (ELO) technique will be also discussed to reduce the dislocation density and enhance the performance of nonpolar and semipolar GaN-based LEDs.

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Enhanced Internal Quantum Efficiency and Light Extraction Efficiency of Light-emitting Diodes with Air-gap Photonic Crystal Structure Formed by Tungsten Nano-mask

  • Cho, Chu-Young;Hong, Sang-Hyun;Kim, Ki Seok;Jung, Gun-Young;Park, Seong-Ju
    • Bulletin of the Korean Chemical Society
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    • v.35 no.3
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    • pp.705-708
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    • 2014
  • We demonstrate the blue InGaN/GaN multiple quantum wells light-emitting diodes (LEDs) with an embedded air-gap photonic crystal (PC) which was fabricated by the lateral epitaxial overgrowth of GaN layer on the tungsten (W) nano-masks. The periodic air-gap PC was formed by the chemical reaction of hydrogen with GaN on the W nano-mask. The optical output power of LEDs with an air-gap PC was increased by 26% compared to LEDs without an air-gap PC. The enhanced optical output power was attributed to the improvement in internal quantum efficiency and light extraction efficiency by the air-gap PC embedded in GaN layer.

Modified Pseudosteady-State Approach to Calculate Long-Time Performance of Closed Gas Reservoirs (수정된 유사정상상태 해법을 이용한 폐쇄 가스저류층의 장기 거동 해석)

  • Lee Kun Sang
    • Journal of the Korean Institute of Gas
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    • v.2 no.4
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    • pp.73-78
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    • 1998
  • This paper considers the applicability of a pseudosteady-state approach to the long-time behavior of real gas flow in a closed reservoir. The method involves a combination of a linearized gas diffusivity equation using a normalized pseudotime and a material balance equation. For the simulation of field-scale problems with multiple wells of differing production rates over extended production periods, the pseudosteady-state equation was solved successively for each flow period. Results from this study show that the approach provides a fast and accurate method for modeling the long-time behavior of gas reservoirs under depletion conditions.

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Luminescence Properties of Blue Light-emitting Diode Grown on Patterned Sapphire Substrate

  • Wang, Dang-Hui;Xu, Tian-Han;Wang, Lei
    • Current Optics and Photonics
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    • v.1 no.4
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    • pp.358-363
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    • 2017
  • In this study, we present a detailed investigation of luminescence properties of a blue light-emitting diode using InGaN/GaN (indium component is 17.43%) multiple quantum wells as the active region grown on patterned sapphire substrate by low-pressure metal-organic chemical vapor deposition (MOCVD). High-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman scattering (RS) and photoluminescence (PL) measurements are employed to study the crystal quality, the threading dislocation density, surface morphology, residual strain existing in the active region and optical properties. We conclude that the crystalline quality and surface morphology can be greatly improved, the red-shift of peak wavelength is eliminated and the superior blue light LED can be obtained because the residual strain that existed in the active region can be relaxed when the LED is grown on patterned sapphire substrate (PSS). We discuss the mechanisms of growing on PSS to enhance the superior luminescence properties of blue light LED from the viewpoint of residual strain in the active region.

Optical Characterization of Light-Emitting Diodes Grown on the Cylinder Shape 300 nm Diameter Patterned Sapphire Substrate (300 nm Diameter Cylinder-Shape 나노패턴 기판을 이용한 LEDs의 광학적 특성)

  • Kim, Sang Mook;Kim, Yoon Seok
    • Korean Journal of Materials Research
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    • v.29 no.1
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    • pp.59-64
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    • 2019
  • This study investigates the optical characteristics of InGaN multiple quantum wells(MQWs) light emitting diodes(LEDs) on planar sapphire substrates(PSSs), nano-sized PSS(NPSS) and micro-sized PSS(MPSS). We obtain the results as the patterning size of the sapphire substrates approach the nanometer scale: The light from the back side of the device increases and the total light extraction becomes larger than the MPSS- and planar-LEDs. The experiment is conducted by Monte Carlo ray-tracing, which is regarded as one of the most suitable ways to simulate light propagation in LEDs. The results show fine consistency between simulation and measurement of the samples with different sized patterned substrates. Notably, light from the back side becomes larger in the NPSS LEDs. We strongly propose that the increase in the light intensity of NPSS LEDs is due to an abnormal optical distribution, which indicates an increase of extraction probability through NPSS.

Time-resolved photoluminescence spectroscopy of InGaN multiple quantum wells

  • Lee, Joo-In;Shin, Eun-joo;Lee, J.Y. m;Kim, S.T.;G.S. Lim;Lee, H.G.
    • Journal of Korean Vacuum Science & Technology
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    • v.4 no.1
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    • pp.23-26
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    • 2000
  • We have fabricated by metal organic chemical vapor deposition (MOCVD) In$\_$0.13/Ga$\_$0.87/N/GaN multiple quantum well (MQW) with thickness as thin as 10 A and barriers also of th same width on (0001) sapphire substrate. We have investigated this thin MQW by steady-state and time-resolved photoluminescence(PL) in picosecond time scale in a wide temperature range from 10 to 290 K. In the PL at 10 K, we observed a broad peak at 3.134 eV which was attributed to the quantum well emission of InGaN. The full width at half maximum (FWHM) of this peak was 129 meV at 10 K and its broadening at low temperatures was considered to be due to compositional fluctuations and interfacial disorder in the alloy. The narrow width of the quantum well was mainly responsible for the broadening of the emission linewidth. We also observed an intense and sharp peak at 3.471 eV of GaN barrier. From the temperature dependent PL measurements, the activation energy of the InGaN quantum well emision peak was estimated to be 69 meV. The lifetime of the quantum well emission was found to be 720 ps at 10 K, which was explained in terms of the exciton localization arising from potential fluctuations.

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Prediction of Nitrate Contamination of Groundwater in the Northern Nonsan area Using Multiple Regression Analysis (다중 회귀 분석을 이용한 논산 북부 지역 지하수의 질산성 질소 오염 예측)

  • Kim, Eun-Young;Koh, Dong-Chan;Ko, Kyung-Seok;Yeo, In-Wook
    • Journal of Soil and Groundwater Environment
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    • v.13 no.5
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    • pp.57-73
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    • 2008
  • Nitrate concentrations were measured up to 49 mg/L (as $NO_3$-N) and 22% of the samples exceeded drinking water standard in shallow and bedrock groundwater of the northern Nonsan area. Nitrate concentrations showed a significant difference among land use groups. To predict nitrate concentration in groundwater, multiple regression analysis was carried out using hydrogeologic parameters of soil media, topography and land use which were categorized as several groups, well depth and altitude, and field parameters of temperature, pH, DO and EC. Hydrogeologic parameters were quantified as area proportions of each category within circular buffers centering at wells. Regression was performed to all the combination of variables and the most relevant model was selected based on adjusted coefficient of determination (Adj. $R^2$). Regression using hydrogelogic parameters with varying buffer radii show highest Adj. $R^2$ at 50m and 300m for shallow and bedrock groundwater, respectively. Shallow groundwater has higher Adj. $R^2$ than bedrock groundwater indicating higher susceptibility to hydrogeologic properties of surface environment near the well. Land use and soil media was major explanatory variables for shallow and bedrock groundwater, respectively and residential area was a major variable in both shallow and bedrock groundwater. Regression involving hydrogeologic parameters and field parameters showed that EC, paddy and pH were major variables in shallow groundwater whereas DO, EC and natural area were in bedrock groundwater. Field parameters have much higher explanatory power over the hydrogeologic parameters suggesting field parameters which are routinely measured can provide important information on each well in assessment of nitrate contamination. The most relevant buffer radii can be applied to estimation of travel time of contaminants in surface environment to wells.