• Applied Microscopy
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• 제42권3호
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• pp.151-157
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• 2012

The microstructure of various shapes of stacking fault pyramids (SFPs) formed in multiple implant/anneal Separation by Implanted Oxygen (SIMOX) material were investigated by plan-view and cross-sectional transmission electron microscopy. In the multiple implant/anneal SIMOX, the defects in the top silicon layer are confined at the interface of the buried oxide layer at a density of ${\sim}10^6\;cm^{-2}$. The dominant defects are perfect and imperfect SFPs. The perfect SFPs were formed by the expansion and interaction of four dissociated dislocations on the {111} pyramidal planes. The imperfect SFPs show various shapes of SFPs, including I-, L-, and Y-shapes. The shape of imperfect SFPs may depend on the number of dissociated dislocations bounded to the top of the pyramid and the interaction of Shockley partial dislocations at each edge of {111} pyramidal planes.

• Archives of Pharmacal Research
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• 제26권7호
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• pp.559-563
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• 2003

Cytokines produced by immune cells infiltrating pancreatic islets have been incriminated as important mediators of $\beta$-cell destruction in insulin-dependent diabetes mellitus. In non insulin-dependent diabetes, cytokines are also associated with impaired $\beta$-cell function in high glucose condition. By the screening of various natural products blocking $\beta$-cell destruction, we have recently found that epigallocatechin gallate (EGCG) can prevent the in vitro destruction of RINm5F cell, an insulinoma cell line, that is induced by cytokines. In that study we suggested that EGCG could prevent cytokine-induced $\beta$-cell destruction by down-regulation of nitric oxide synthase (NOS) through inhibition of NF-kB activation. Here, to verify the in vivo antidiabetogenic effect of EGCG, we examined the possibility that EGCG could also prevent the experimental autoimmune diabetes induced by the treatment of multiple low doses of streptozotocin (MLD-STZ), which is recognized as an inducer of type I autoimmune diabetes. Administration of EGCG (100 mg/day/kg for 10 days) during the MLD-STZ induction of diabetes reduced the increase of blood glucose levels caused by MLD-STZ. Ex vivo analysis of $\beta$-islets showed that EGCG downregulates the MLD-STZ-induced expression of inducible NOS (iNOS). In addition, morphological examination showed that EGCG treatment ameliorated the decrease of islet mass induced by MLD-STZ. In combination these results suggest that EGCG could prevent the onset of MLD-STZ-induced diabetes by protecting pancreatic islets. Our results therefore revealed the possible therapeutic value of EGCG for the prevention of diabetes mellitus progression.

• 한국수소및신에너지학회논문집
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• 제29권4호
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• pp.386-392
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• 2018

Fuel cells are known as eco - friendly energy facilities that can use heat energy and electric energy at the same time. Fuel cells are classified according to the temperature and material used, and solid oxide fuel cell (SOFC) is relatively high temperature ($700-800^{\circ}C$). SOFC requires a hot box consisting of a high temperature stack, a reformer, a burner, and the heat exchangers in order to use energy efficiently. The hot box needs to maintain heat insulation performance at high temperature to reduce heat loss. However, Fibrous insulation, which is widely used, needs to be improved because it has a disadvantage that the thermal conductivity is rapidly increased due to the increase of temperature. Therefore, this study was carried out to develop a thermal insulation, which is applied to multiple layers insulation (MLI) technic, that can be used under SOFC operating conditions and prevent a drastic drop in thermal conductivity at high temperature. The developed insulation is consist of a thermally conductive material, a spacer, and a reflective plate. The thermal conductivity of the insulation was measured by in the thermal conductivity measuring device at high temperature range. As a result, it was confirmed that the developed layers insulation have an good thermal conductivity (0.116 W/mK) than fibrous insulation (0.24 W/mK) as a radiation shielding effect at a high temperature of 1,173 K.

• 한국세라믹학회지
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• 제35권1호
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• pp.55-65
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• 1998

Ag-36.8a%Cu-7.4at%Ti 조성의 브레이징 합금을 Si3N4 기판위에 브레이징한 후 브레이징 합금의 산화거동을 대기중 400, 500, 600$^{\circ}C$에서 조사하였다. 브레이징 합금의 구성원소인 Ag는 산화되지 않고 Cu와 Ti가 산화되며, 산화거동은 포물선적 산화법칙을 따랐다. 브레이징 합금의 산화에 따른 활성화에너지는 80kj/ mol 으로서 소량 첨가된 활성원소인 Ti에 의하여 순수한 Cu의 산화시 활성화에너지보다 감소하였다. 산화 초기에 생성되는 외부산화물은 Cu이온의 외부확산에 의해 성장이 지배되는 Cu산화물로 구성되어 있었다. 산화기간이 경과함에 따라 외부산화물층 아래에서 Cu의 농도는 감소되고 Ag의 농도는 증가하는 농도구배가 발생하여, 브레이징 합금의 산화물은 Cu산화물층(CuO)/Ag잉여층/Cu산화물층(Cu2O)/Ag잉여층의 다층구조를 갖았다. 또한, 분위기중의 산소는 Cu산화물 및 Ag잉여층을 통해 브레이징 합금 내부로 확산되어 브레이징 합금내의 Ti와 반응하여 내부산화물 TiO2를 생성하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권1호
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• pp.40-49
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• 2001

We have developed a repeatable process of forming uniform, small-size and high-density self-assembled Si nano-crystals. The Si nano-crystals were fabricated in a conventional LPCVD (low pressure chemical vapor deposition) reactor at $620^{\circ}c$ for 15 sec. The nano-crystals were spherical shaped with about 4.5 nm in diameter and density of $5{\times}l0^{11}/$\textrm{cm}^2$. More uniform dots were fabricated on nitride film than on oxide film. To take advantage of the above-mentioned characteristics of nitride film while keeping the high interface quality between the tunneling dielectrics and the Si substrate, nitride-oxide tunneling dielectrics is proposed in n-channel device. For the first time, the single electron effect at room temperature, which shows a saturation of threshold voltage in a range of gate voltages with a periodicity of ${\Delta}Ｖ_{GS}\;{\approx}\;1.7{\;}V$, corresponding to single and multiple electron storage is reported. The feasibility of p-channel nano-crystal memory with thin oxide in direct tunneling regime is demonstrated. The programming mechanisms of p-channel nano-crystal memory were investigated by charge separation technique. For small gate programming voltage, hole tunneling component from inversion layer is dominant. However, valence band electron tunneling component from the valence band in the nano-crystal becomes dominant for large gate voltage. Finally, the comparison of retention between programmed holes and electrons shows that holes have longer retention time.

• 한국표면공학회지
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• 제49권2호
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• pp.119-124
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• 2016

Plasma electrolytic oxidation (PEO) is a promising coating process to produce ceramic oxide on valve metals such as Al, Mg and Ti. The PEO coating is carried out with a dilute alkaline electrolyte solution using a similar technique to conventional anodizing. The coating process involves multiple process parameters which can influence the surface properties of the resultant coating, including power mode, electrolyte solution, substrate, and process time. In this study, ceramic oxide coatings were prepared on commercial Al alloy in electrolytes with different KOH concentrations (0.5 ~ 4 g/L) by plasma electrolytic oxidation. Microstructural and electrochemical characterization were conducted to investigate the effects of electrolyte concentration on the microstructure and electrochemical characteristics of PEO coating. It was revealed that KOH concentration exert a great influence not only on voltage-time responses during PEO process but also on surface morphology of the coating. In the voltage-time response, the dielectric breakdown voltage tended to decrease with increasing KOH concentration, possibly due to difference in solution conductivity. The surface morphology was pancake-like with lower KOH concentration, while a mixed form of reticulate and pancake structures was observed for higher KOH concentration. The KOH concentration was found to have little effect on the electrochemical characteristics of coating, although PEO treatment improved the corrosion resistance of the substrate material significantly.

• 한국환경보건학회지
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• 제8권1호
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• pp.25-30
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• 1982

The incidence of hospital infection has been seriously increased in the general hospital in recent years. This study was performed on hospital air and materials in a General Hospital in Seoul from June to December in 1980. The results were as follows: 1. Air sampling was done in multiple strategic areas by exposing standard petridishes for 5 minutes. There was a significant difference of airborne microbe between places. ($F._{99}$ = 3.2, p < 0.01). 2. The mean colony count was 8.6$\pm$6.2 colonies / plate / 5 minutes. 3. Gram stains of colony in air sampling were Gram (+) cocci 66.5%. Gram (+) rod 18.4%, Gram (-) cocci 1.3%, Gram (-) rod 8.7% Fungus 4.5%. 4. For the evaluation of sterilization of steam sterilizer and ethylene oxide gas sterilizer, biological monitoring were done by commercial spore strip. Positive culture was obtained in 2 out of 41 tests on 3 steam sterilizers, and in 3 out of 13 tests on ethylene oxide gas sterilizer. 5. Product sampling and culture were done for 2 kinds of disinfectants and 30 sets of various operation package or dressing materials. Positive culture was obtained in one disinfectants.

• 대한화장품학회:학술대회논문집
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• 대한화장품학회 2003년도 IFSCC Conference Proceeding Book II
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• pp.110-116
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• 2003

We have developed a high performance powder, which has a quenching efficacy not only for short-chain fatty acids and amines, but also for vinyl ketones (l-octen-3-one, cis-l,5-octadien-3-one), newly found as other key compounds in axillary malodor. By investigating various powders known to have a quenching efficacy, we finally developed a highly porous silica bead containing magnesium oxide. We found that the superior deodorant effect performed by this powder was the result of multiple effects due to both an excellent physical adsorption capability from its high porosity and a specific adsorption of vinyl ketones by magnesium in the powder. An antiperspirant formulation containing both this powder and a Morus alba extract showed good efficacy as a deodorant.

• Transactions on Electrical and Electronic Materials
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• 제3권3호
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• pp.14-17
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• 2002

The HDP (High Density Plasma) CVD process consists of a simultaneous sputter etch and chemical vapor deposition. As CMOS process continues to scale down to sub- quarter micron technology, HDP process has been widely used fur the gap-fill of small geometry metal spacing in inter-metal dielectric process. However, HBP CVD system has some potential problems including plasma-induced damage. Plasma-induced gate oxide damage has been an increasingly important issue for integrated circuit process technology. In this paper, thin gate oxide charge damage caused by HDP deposition of inter-metal dielectric was studied. Multiple step HDP deposition process was demonstrated in this work to prevent plasma-induced damage by introducing an in-situ top SiH$_4$ unbiased liner deposition before conventional deposition.

• 전기전자학회논문지
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• 제19권4호
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• pp.491-499
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• 2015

Silicon Carbide(SiC)는 높은 열전도도와 넓은 밴드갭 에너지로 인해 고온과 고전압 소자로 사용하는데 큰 장점을 가지고 있는 물질이다. SiC를 이용하여 전력반도체소자를 제작할 경우, 소자가 목표 전압을 충분히 견딜 수 있도록 Edge Termination 기법을 적용하여야한다. Edge Termination 기법에는 여러 가지 방안이 제안되어왔는데, SiC 소자에 가장 적합한 기법은 Junction Termination Extension (JTE)이다. 본 논문에서는 각 JTE 구조별 도핑 농도와 Passivation Oxide Charge 변화에 따른 항복전압의 변화를 살펴보았다. 결과적으로 Single Zone JTE (SZ-JTE)는 1D 시뮬레이션 값의 98.24%, Double Zone JTE (DZ-JTE)는 99.02%, Multiple-Floating-Zone JTE (MFZ-JTE)는 98.98%, Space-Modulated JTE (SM-JTE)는 99.22%의 최대 항복전압을 나타내었고, JTE 도핑 농도 변화에 따른 최대 항복전압의 민감도는 MFZ-JTE가 가장 낮은 반면 SZ-JTE가 가장 높았다. 또한 Passivation Oxide 층의 전하로 인해 소자의 항복전압의 변화를 살펴보았는데, 이에 대한 민감도 역시 MFZ-JTE가 가장 낮았으며 SZ-JTE가 가장 높았다. 결과적으로 본 논문에서는, 짧은 JTE 길이에서 높은 도핑 농도를 필요로 하는 MFZ-JTE보다 DZ-JTE와 SM-JTE가 실제 소자 설계에 있어 가장 효과적인 JTE 기법으로 분석되었다.