• Korean Chemical Engineering Research
• /
• v.59 no.4
• /
• pp.639-643
• /
• 2021

In this study, fluorinated ethylene propylene (FEP) nanoparticle as an adhesive for fabricating a three-dimensional multilayered microfluidic device was studied. The formation of evenly distributed FEP nanoparticles layer with 3 ㎛ in thickness on substrates was achieved by simple spin coating of FEP dispersion solution at 1500 rpm for 30 s. It is confirmed that FEP nanoparticles transformed into a hydrophobic thin film after thermal treatment at 300 ℃ for 1 hour, and fabricated polyimide film-based microfluidic device using FEP nanoparticle was endured pressure up to 2250 psi. Finally, a three-dimensional multilayered microfluidic device composed of 16 microreactors, which are difficult to fabricate with conventional photolithography, was successfully realized by simple one-step alignment of FEP coated nine polyimide films. The developed three-dimensional multilayered microfluidic device has the potential to be a powerful tool such as high-throughput screening, mass production, parallelization, and large-scale microfluidic integration for various applications in chemistry and biology.

• Journal of the Korean Ceramic Society
• /
• v.34 no.6
• /
• pp.601-610
• /
• 1997

In cofiring of multilayered alumina with tungsten, the change of camber with lamination condition was experimented and the effect of sintering shrinkage of alumina and tungsten was investigated. From the exact measurement of sintering shrinkage of tungsten thick film, as lamination pressure increased, the sintering shrinkage of alumina decreased but that of tungsten thick film was not changed. So it was though that the main factor which induced the sintering shrinkage difference between ceramics and metal with lamination condition was the change of sintering shrinkage of ceramics. In case of high lamination pressure, high green sheet density, the cofired specimen showed low camber due to low shrinkage difference between alumina and tungsten and there was a linear relation between camber and shrinkage difference. It was found that this shrinkage difference could change the thickness of tungsten film and the microstructure within via hole during cofiring.

• Corrosion Science and Technology
• /
• v.12 no.3
• /
• pp.119-124
• /
• 2013

Nano-multilayered, crystalline AlTiSiN thin films were deposited on WC-TiC-Co substrates by the cathodic arc plasma deposition. The deposited film consisted of wurtzite-type AlN, NaCl-type TiN, and tetragonal $Ti_2N$ phases. Their oxidation characteristics were studied at 800 and $900^{\circ}C$ for up to 20 h in air. The WC-TiC-Co oxidized fast with large weight gains. By contrast, the AlTiSiN film displayed superior oxidation resistance, due mainly to formation of the ${\alpha}-Al_2O_3$-rich surface oxide layer, below which an ($Al_2O_3$, $TiO_2$, $SiO_2$)-intermixed scale existed. Their oxidation progressed primarily by the outward diffusion of nitrogen, combined with the inward transport of oxygen that gradually reacted with Al, Ti, and Si in the film.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2001.07a
• /
• pp.100-103
• /
• 2001

In this study, the adhesion and thermal property of the electroless-deposited Cu thin film were investigated. The multilayered structure of Cu/TaN/Si was fabricated by electroless-depositing the Cu thin layer on the TaN diffusion barrier which was deposited by MOCVD on the Si substrate. The thermal stability was investigated by measuring the resistivity as post-annealing temperature far the multilayered Cu/TaN/Si specimen which was annealed at Ar gas. The adhesion property of Cu 171ms was evaluated by the scratch test. The adhesion of the electroless-deposited Cu film was compared with other deposition methods of thermal evaporation and sputtering. The scratch test showed that the adhesion of electroless plated Cu film on TaN was better than those of sputtered Cu film and evaporated Cu film.

• Journal of the Korean Applied Science and Technology
• /
• v.39 no.1
• /
• pp.34-41
• /
• 2022

As the use of chemical products increases in daily life, the removal of dye waste has also emerged as an important environmental issue. This dye waste can be decomposed using a photocatalyst, and the photocatalyst can be synthesized very cost-effectively by using the sol-gel technology. The sol-gel technology is not only very useful for nanoscale film formation, but also can simply form multilayer structures. Using a multiple spin coating method, in this study, a ZnO film with a multilayered structure (3 layers, 5 layers) was formed by using zinc oxide (ZnO), which is effective in decomposing various dyes. For performance comparison, a ZnO film having a single layer structure by a single spin coating method was prepared as a control. Structural and elemental analysis of ZnO film was performed using an X-ray diffraction analyzer and an energy dispersive X-ray spectrometer. A nanowire-like surface morphology could be observed through a scanning electron microscope. Additionally, UV-Vis spectrophotometer was used to measure the absorbance of UV light. The ZnO film with a five-layer structure degraded the simulated methylene blue by 49% more than the ZnO film with a single-layer structure. In conclusion, it was found that ZnO having a multilayered structure is useful as a photocatalyst that decomposes methylene blue dye more effectively.

• Journal of Magnetics
• /
• v.19 no.2
• /
• pp.121-125
• /
• 2014

$CoFe_2O_4(CFO)/BaTiO_3(BTO)/CoFe_2O_4(CFO)$ multilayered thin films were deposited on $Pt/TiO_2/SiO_2/Si$ substrates by the pulsed laser deposition (PLD) system with KrF excimer laser (${\lambda}=248nm$). BTO, CFO, BTO/CFO and CFO/BTO/CFO structured thin films were prepared and their crystal structures and microstructures, as well as their magnetic and magneto-electrical properties, were studied. The C-V characteristics of these multilayered thin films with different capacitor structures were obtained to confirm the change in their capacitances under a magnetic field. Finally, the capacitance of the CFO/BTO/CFO thin film as a function of bias voltage under an in-plane magnetic field of 1,000 Oe increased to 951.04 pF at 1 MHz, from 831.90 pF measured under no magnetic field, indicating 14.3% increase in magnetocapacitance.

• Journal of the Korean Vacuum Society
• /
• v.12 no.S1
• /
• pp.67-69
• /
• 2003

The magnetic properties of single- and poly-crystalline $La_{0.7}Sr_{0.3}MnO_3/Pr_{0.65}Ca_{0.35}MnO_3$ multilayered (ML) films, and composite (CP) $(La_{0.7}Sr_{0.3})_{0.5}(Pr_{0.65}Ca_{0.35}_{0.5}MnO_3$ films, prepared by laser ablation, have been investigated in a wide temperature range. It was shown that the transformation from an incoherent to a coherent interface in the ML films leads to an enhancement of the ferromagnetic coupling between layers and to a single-phase magnetic transition. The amorphous CP films demonstrate a paramagnetic behavior of the magnetization with a sharp peak at $T_{G}\approx$45 K, which was interpreted as the formation of Griffiths phase. A short-term annealing at $750^{\circ}C$ induced the complete crystallization of film, and a recovery of the ferromagnetic and the metal-insulator transitions.

• Journal of Magnetics
• /
• v.9 no.3
• /
• pp.79-82
• /
• 2004

The structure and magnetic properties of Fe-Ni-N/Cu multilayered films, prepared by the DC magnetron sputter, as a function of different thicknesses of Fe-Ni-N ($t_{FeNiN}$) and Cu ($t_Cu$) layers have been studied by the methods of x-ray diffraction and measurement of magnetic moment. It has been found that the enhancement of (200) orientation in Fe-Ni-N layers is observed at the ratio of layer thickness with about $t_{FeNiN}/t_{Cu}$ $\underline{\simeq}$ 3.75. The reduction of magnetization due to the formation of interdiffusion near the interface is explained by means of the dead layer model. The temperature dependence of magnetization exhibits the feature of Blochs $T^{\frac{2}{3}}$ law. The layer thickness dependence of Curie temperature has been discussed by critical temperature theory of Heisenberg model.

• Journal of the Korean Magnetics Society
• /
• v.6 no.3
• /
• pp.170-173
• /
• 1996

Co-Zr multilayered thin films were prepared by three-gun magnetron sputtering system and low temperature arrorphization was attempted. According to thin film X-ray and cross-sectional TEM analysis, it has been found that zirconium layer is arrorphized by diffusion of cobalt and the amorphization rate at the upper interface is two or three times faster than that at the lower interface of the zirconium layers. This new phenomenon is explained in terms of atomic mixing during sputtering.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2000.01a
• /
• pp.37-38
• /
• 2000

The ZnS:Tb thin-film electroluminescent devices were grown by atomic layer deposition with utilizing single-layer aluminum oxide and/or multilayered tantalum aluminum oxide, $Ta_xAl_yO$, as upper and lower insulating layers. These devices were investigated in terms of the luminescent and electrical characteristics. From this analysis, the devices using the $Ta_xAl_yO$ instead of $Al_2O_3$ were observed to have a lower threshold voltage for emission due to the higher relative dielectric constant of $Ta_xAl_yO$ insulators than that of the $Al_2O_3$ device. And there was a large amount of dynamic space charge generation in the phosphor of the device with the $Ta_xAl_yO$ insulators seemingly due to electron multiplication such as trap ionization.