• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.131-134
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• 2003

[ $ZnWO_4$ ] shows excellent frequency selectivity due to its high quality factor($Q{\times}f$) at microwave frequencies. However, in order to use $ZnWO_4$ as multilayered wireless communication components, its other properties such as sintering temperature($1050^{\circ}C$), ${\tau}_f$ ($-70ppm/^{\circ}C$) and ${\varepsilon}_r(15.5)$ should be modified. In present study, $TiO_2$ and LiF were used to improve the microwave dielectric and sintering properties of $ZnWO_4$. $TiO_2$ additions to $ZnWO_4$ changed ${\tau}_f$ from negative to positive value, and also increased ${\varepsilon}_r$ due to its high ${\tau}_f$ ($+400ppm/^{\circ}C$) and ${\varepsilon}_r$(100). At 20 mol% $TiO_2$ addition, ${\tau}_f$ was controlled to near zero $ppm/^{\circ}C$ with ${\varepsilon}_r=19.4$ and $Q{\times}f=50000GHz$. However, the sintering temperature was still high to $1100^{\circ}C$. LiF addition to the $ZnWO_4+TiO_2$ mixture was greatly reduced the sintering temperature from $1100^{\circ}C$ to $850^{\circ}C$ due to liquid phase formation. Also LiF addition decreased the ${\tau}_f$ value due to its high negative ${\tau}_f$ value. Therefore, by controlling the $TiO_2$ and LiF amount, temperature stable LTCC material in the $ZnWO_4$-TiO_2-LiF$ system could be fabricated.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.2
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• pp.255-262
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• 2003

In this paper, an investigation on the ZnO film deposition using radio-frequency magnetic sputtering techniques on aluminum bottom electrode for film bulk acoustic wave resonator (FBAR) filter applications and the temperature effects on the ZnO film growth is presented. The investigation on how much impact the actual process temperature may have on the crystal growth is more meaningful if it is considered that the piezoelectricity property of ZnO films plays a dominant role in determining the resonance characteristics of FBAR devices and the piezoelectricity is determined by the degree of the c-axis preferred orientation of the deposited ZnO films. In this experiment, it was found that the growth of ZnO crystals has a strong dependence on the deposition temperature ranged from room temperature to $350^{\circ}C$ regardless of the RF powers applied and there exist 3 temperature regions divided by 2 critical temperatures according to the degree of the c-axis preferred orientation. Overall, below $200^{\circ}C$, ZnO deposition results in columnar grains with a highly preferred c-axis orientation. With this ZnO film, a multilayered FBAR structure could be realized successfully.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.4 no.4
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• pp.341-345
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• 2003

ZnWO$_4$shows excellent frequency selectivity due to its high quality factor(Q${\times}$f) at microwave frequencies. However, in order to use ZnWO$_4$as multilayered wireless communication components, its other properties such as sintering temperature(105$0^{\circ}C$). $$\tau$_f$(-70ppm/$^{\circ}C$) and $$\varepsilon$_r$(15.5) should be modified. In present study, TiO$_2$and LiF were used to improve the microwave dielectric and sintering properties of ZnWO$_4$. TiO$_2$ additions to ZnWO$_4$changed $\tau$$_{f}$ from negative to positive value, and also increased $$\varepsilon$_r$, due to its high $$\tau$_f$(＋400ppm$^{\circ}C$) and $$\varepsilon$_r$(100). At 20 mol% TiO$_2$ addition, $$\tau$_f$was controlled to near zero ppm/$^{\circ}C$ with $$\varepsilon$_r$=19.4 and Q${\times}$ f=50000GHz. However, the sintering temperature was 110$0^{\circ}C$. LiF addition to the ZnWO$_4$＋TiO$_2$ mixture greatly reduced the sintering temperature from 110$0^{\circ}C$ to 85$0^{\circ}C$ due to liquid phase formation. Also LiF addition decreased the $$\tau$_f$value due to its high negative $$\tau$_f$ value. Therefore, by controlling the TiO$_2$and LiF amount. temperature stable LTCC(Low Temperature Cofired Ceramics) material with low loss in the ZnWO$_4$-TiO$_2$-LiF system could be fabricated.d.d.

• Environmental Engineering Research
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• v.19 no.3
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• pp.205-214
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• 2014

Petroleum a vital commodity affecting every aspect of 21st century. Toxicity and adverse effects of sulphur as catalyst in petroleum products is of great concern required development of techniques for desulphurization in compliance with the International standards. Installation of desulphurizing units costs over $200 million per unit placing economic burden on developing countries like Pakistan. Present study analysis of commercial fuels (station petrol and jet fuel JP8) on gas chromatography-mass spectrometry (GC-MS) identified sulphur concentration of 19.94 mg/L and 21.75 mg/L, respectively. This scenario urged the researcher to attempt synthesis of material that is likely to offer good adsorption capacity for sulphur. Following protocol of sol-gel method, transition metals (Ni, Cu, Zn) solution is gelated with tetraethoxysilane (TEOS; silica precursor) using glycerol. Fourier transform infrared spectroscopy (FTIR) spectra revealed bonding of Zn-O, Cu-O, and Ni-O by stretching vibrations at $468cm^{-1}$, $617cm^{-1}$, and $468cm^{-1}$, respectively. Thiophene and Benzothiophene mixed in n-heptane and benzene (4:1) for preparation of Model Fuels I and II, respectively. Each of silica based metal was applied as adsorbent in batch mode to assess the removal efficiency. Results demonstrated optimal desulphurization of more than 90% following efficacy order as Si-Ni > Si-Zn > Si-Cu based adsorbents. Proposed multilayered (Freundlich) adsorption mechanism follows ${\pi}$-complexation with pseudo secnd order kinetics.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.12
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• pp.2014-2018
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• 2016

Transparent, conductive electrode films, showing the particular characteristics of good conductivity and high transparency, are of considerable research interest because of their potential for use in opto-electronic applications, such as smart window, photovoltaic cells and flat panel displays. Multilayer transparent electrodes, having a much lower electrical resistance than widely-used transparent conducting oxide electrodes, were prepared by using RF/DC magnetron sputtering system. The multilayer structure consisted of three layers, [NiInZnO(NIZO)/Ag/NIZO]. The optical and electrical properties of the multilayered NIZO/Ag/NIZO structure were investigated in relation to the thickness of each layer. The optical and electrical characteristics of multilayer structures have been investigated as a function of the Ag and NIZO film thickness. High-quality transparent conductive films have been obtained, with sheet resistance of $9.8{\Omega}/sq$ for Ag film thickness of 8 nm. Also the multilayer films of inserted Ag 8 nm thickness showed a high optical transmittance above 93% in the visible range. The electrical and optical properties of the new multilayer films were mainly dependent on the thickness of Ag insertion layer.

• Journal of information and communication convergence engineering
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• v.5 no.4
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• pp.320-323
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• 2007

This paper presents the resonance characteristics of the ZnO-based FBAR devices with multilayered Bragg reflectors with Cr adhesion layer inserted between $SiO_2$ and W layers. Due to the post- annealing, the return loss ($S_{11}$) and series/parallel quality factor are significantly improved when compared with the non-post annealing. This post-annealing method seems to be a very efficient way to improve the resonance characteristics of FBAR devices.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• v.50 no.2
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• pp.94-102
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• 2024

The exact mechanism of sialolith formation has yet to be determined. Recurrence of sialolithiasis is rare, affecting only 1%-10% of patients. The current study presents a case of recurrent stones that occurred twice on the right submandibular gland 6 months postoperative and 7 months after reoperation in a 48-year-old female patient. The stones were analyzed using histology, scanning electron microscopy, energy dispersive spectroscopy, and transmission electron microscopy (TEM). The first stone showed a three-layered structure with a poorly mineralized peripheral multilayered zone, highly mineralized middle layer, and the central nidus. The stones were composed of Ca, C, O, Cu, F, N, P, Si, Zn, and Zr. In TEM, compact bi-layered bacterial cell membrane was found on the peripheral layer and the central nidus of the stone as well as exosomes in the central nidus. The results demonstrated the essential components of sialolith formation, including bacteria, inflammatory exosomes, and exfoliated salivary epithelial cells that cooperatively underwent the pathogenetic progresses of central nidus formation, induction of compact zone calcification of the middle layer, and repeated subsequent deposition in the peripheral multilayer zone. The rapid recurrence could have resulted from residual pieces of a sialolith acting as the nidus of bacterial infection.