• 한국진공학회지
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• 제15권4호
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• pp.410-420
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• 2006

Epitaxial 성장에서 screening 및 steering 효과 등과 같은 증착과정 중 나타나는 dynamic effects를 kinetic Monte Carlo 시뮬레이션으로 고찰하였다. 증착원자와 토대 원자와의 상호 작용을 엄밀하게 고려하기 위해 이 시뮬레이션 프로그램에 molecular dynamics 시뮬레이션을 결합시켰다. 기울어진 각도로 증착 시킬 경우 표면의 형상은 1) 증착 각도가 기울어짐에 따라 거칠기가 증가한다는 것, 2) 비대칭적인 언덕의 형성된다는 것, 그리고 3) 언덕의 면방향에 따라 비대칭적인 기울기를 갖는다는 세가지 특징을 보았다. 증착 각도나 온도 의존성에 대한 시뮬레이션 결과는 기존의 실험 결과와 잘 일치하는 것을 확인하였다. 기울어진 각도로 증착했을 때 나타나는 이러한 결과는 steering과 screening 효과에 따른 초기 증착 밀도의 불균일에 기인함을 알 수 있었고, 여기서 steering 효과가 screening 효과 보다 주요한 역할을 하는 것을 보았다. 시뮬레이션 계산에서 확인된 새로운 결과는 기울기 선택 (slope selection)이 이루어졌어도 언덕의 각 면이 단일한 기울기로 형성되어 있지 않고 여러 종류의 facet가 섞인 형태이며, 따라서 기울기 선택이 바로 facet 선택을 의미하지는 않는다는 것이다.

• 한국자원식물학회:학술대회논문집
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• 한국자원식물학회 2018년도 추계학술대회
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• pp.24-24
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• 2018

Degraded plantation forests are increasing because of unfavorable forestry conditions prevailing in Japan, including falling timber prices, increasing operational costs, and aging and declining forestry workforce. To remedy this situation, appropriate management strategy is required. This study introduces the challenges of Odai Town, Mie Prefecture that employed a new management strategy by evaluating site suitability for conifer forests and that proposes a new forest management regime of planting deciduous trees in unsuitable sites. The site suitability for conifer forests was evaluated from two aspects: the natural site conditions and the relationship among site conditions, growth, and damage by Anaglyptus subfasciatus Pic. in Cryptomeria japonica D. Don and Chamaecyparis obtusa Sieb. Et Zucc. forests. By analyzing the relationship among site conditions, growth, and insect damage based on field data obtained in plantation forests, growth evaluation and insect damage evaluation maps were developed. Based on the natural forest investigation, natural site condition maps for C. japonica and C. obtusa were established. Furthermore, by integrating these evaluation maps with the forest road maps showing the accessibility to the forest, the forest management regime for the whole plantation area of Odai Town was established. The forest management regime map indicates the sites suitable for forestry: suitable for long-rotation, short-rotation, and potential sites for short-rotation. The sites unsuitable for forestry were considered to be more suitable for broadleaved forests. Clear-cutting was conducted in a small area and different seral stage saplings (approximately 20 deciduous tree species) suitable to the site conditions were planted in an area of $80-120m^2$ protected by deer-fences. This might establish a forest composed of many species with a multilayer vertical forest structure in a short period. The planted saplings were distributed neither randomly nor uniformly to reflect the natural distribution of trees in the forest. A challenge to develop new products using the deciduous trees has started, such as wood chips for preparing smoked food, essential oil, and deodorizer. As these challenges have just begun, their effects on enhancing sustainable resource management are still being monitored. Even with the challenges, this regime can be of high value as a management strategy to remedy the situation of expansion of degraded forests in Japan.

• 전자공학회논문지SC
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• 제39권1호
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• pp.51-65
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• 2002

본 논문에서는 혼돈 비선형 시스템의 지능 제어를 위해 간접 적응 제어 방식에 기초한 신경 회로망 제어기 설계 방법을 제안하였다. 제안된 제어 방법은 혼돈 비선형 시스템의 동정을 위해 다층 신경 회로망과 간단한 상태 공간 신경 회로망을 사용한 직-병렬 동정 구조를 이용하여 오프 라인으로 동정 과정을 수행하였으며, 학습된 혼돈 비선형 시스템에 대한 신경 회로망 모델을 사용하여 온 라인으로 제어를 수행하였다. 이때 혼돈 비선형 시스템의 동정 및 제어를 위한 학습 방법은 오차 역전파 방법을 사용하였다. 한편 본 논문에서 제안된 제어 방법을 연속 시간 혼돈 비선형 시스템인 Duffing 방정식과 Lorenz 방정식에 각각 적용하여 신경 회로망을 사용한 기존의 제어 방법과 컴퓨터 모의 실험을 통해 제어 성능을 비교 및 고찰하였다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.508-508
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• 1996

;The growth of films have considerable interest in the field of superlattice structured multi-layer epitaxy led to realization of new devices concepts. Molecular beam epitaxy (MBE) with in situ observation by reflection high-energy electron diffraction (RHEED) is a key technology for controlled layered growth on the atomic scale in oxide crystal thin films. Also, the combination of radical oxygen source and MBE will certainly accelerate the progress of applications of oxides. In this study, the growth process of single crystal films using by MBE method is discussed taking the oxide materials of Bi-Sr-Ca-Cu family. Oxidation was provided by a flux density of activated oxygen (oxygen radicals) from an rf-excited discharge. Generation of oxygen radicals is obtained in a specially designed radical sources with different types (coil and electrode types). Molecular oxygen was introduced into a quartz tube through a variable leak valve with mass flowmeter. Corresponding to the oxygen flow rate, the pressure of the system ranged from $1{\;}{\times}{\;}10^{-6}{\;}Torr{\;}to{\;}5{\;}{\times}{\;}10^{-5}$ Torr. The base pressure was $1{\;}{\times}{\;}10^{-10}$ Torr. The growth of Bi-oxides was achieved by coevaporation of metal elements and oxygen. In this way a Bi-oxide multilayer structure was prepared on a basal-plane MgO or $SrTiO_3$ substrate. The grown films compiled using RHEED patterns during and after the growth. Futher, the exact observation of oxygen radicals with MBE is an important technology for a approach of growth conditions on stoichiometry and perfection on the atomic scale in oxide. The oxidization degree, which is determined and controlled by the number of activated oxygen when using radical sources of two types, are utilized by voltage locked loop (VLL) method. Coil type is suitable for oxygen radical source than electrode type. The relationship between the flux of oxygen radical and the rf power or oxygen partial pressure estimated. The flux of radicals increases as the rf power increases, and indicates to the frequency change having the the value of about $2{\times}10^{14}{\;}atoms{\;}{\cdots}{\;}cm^{-2}{\;}{\cdots}{\;}S^{-I}$ when the oxygen flow rate of 2.0 seem and rf power 150 W.150 W.

• 전기학회논문지
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• 제64권9호
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• pp.1323-1329
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• 2015

The WO₃/Ag/WO₃ transparent thin films are fabricated by the RF magnetron sputtering. This has a transmittance of front and rear about 90% in the visible light range and surface resistance of 6.41Ω/□. In this paper, we analyzed the surface characteristics caused by the working pressure and O₂ plasma surface treatment to apply a transparent electrode that was prepared to the laminated structure with other materials. The working pressure was changed in the WO₃ film to 10mTorr, 7mTorr, and 5mTorr, it showed a lower than roughness of conventional ITO. In addition, by 55.5774 J/m² at 5mTorr, it shows the hydrophobic property with lower process pressure. O₂ plasma surface treatment was changed at the condisions of the RF power to 150W, 100W, and 50W and the process time to 240s, 180s, 120s, and 60s. The surface roughness are the maximum roughness(Rmax) 6.437nm and the average roughness(Rq) 0.827nm at RF power 150W, and the maximum roughness (Rmax) 6.880nm and the average roughness (Rq) 0.839nm at process time 240sec. It showed a lower value than the surface treatment. also about working pressure and process time is increased, it showed the hydrophobic.

• Composites Research
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• 제29권4호
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• pp.151-155
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• 2016

그래핀은 저차원 구조에서 기인하는 우수한 특성으로 인해 슈퍼커패시터의 전극소재로 응용이 가능한 소재이다. 본 연구에서는 2차원 구조인 그래핀의 비 표면적 향상을 위해 다공성 니켈 나노구조체 표면에 열 화학기상증착법과 마이크로웨이브 플라즈마 화학기상증착법을 이용하여 3차원의 그래핀을 합성하였다. 주사전자현미경, 라만 분광법, X-선 광전자 분광법을 통해 합성된 그래핀의 구조적, 화학적 특성을 분석한 결과, 3차원 구조의 우수한 결정성을 지니는 다중층 그래핀이 다양한 기판 위에 합성된 것을 확인할 수 있었다.

• 한국광학회지
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• 제15권6호
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• pp.531-538
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• 2004

균일한 표면에서 일어나는 가파른 계단형식의 흡착에 대한 연구는 이차원 현상에 대한 이해를 한층 높일 수 있다. 이를 위해 편광변조 타원해석법을 이용한 흡착측정장치를 제작하였다. 타원해석법 신호가 흡착막 형성의 과정을 원자층 이하 (∼0.3 $\AA$)로 매우 예민하게 측정할 수 있음을 확인할 수 있었다. HOPG (highly oriented pyrolytic graphite) 표면에서의 아르곤의 흡착 다층막을 측정한 결과, 34.04 K에서는 수천여개의 흡착층이 형성되어 완전 젖음이 일어남을 관찰할 수 있었다. 또한 67.05 K에서는 선명한 계단 형식으로 일어나는 9개의 흡착과 탈착을 확인할 수 있었다. 이에서 얻은 등온흡착곡선들은 많은 열역학적 상태에 관한 정보, 표면과 기체의 결합에너지에 대한 정보, 흡착막의 구조전이에 대한 정보 등을 줄 수 있을 것이다.

• 한국재료학회지
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• 제20권5호
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• pp.267-270
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• 2010

Sn doped $In_2O_3$ (ITO) and ITO/Cu/ITO (ICI) multilayer films were prepared on glass substrates with a reactive radio frequency (RF) magnetron sputter without intentional substrate heating, and then the influence of the Cu interlayer on the methanol gas sensitivity of the ICI films were considered. Although both ITO and ICI film sensors had the same thickness of 100 nm, the ICI sensors had a sandwich structure of ITO 50 nm/Cu 5 nm/ITO 45 nm. The ICI films showed a ten times higher carrier density than that of the pure ITO films. However, the Cu interlayer may also have caused the decrement of carrier mobility because the interfaces between the ITO and Cu interlayer acted as a barrier to carrier movement. Although the ICI films had two times a lower mobility than that of the pure ITO films, the ICI films had a higher conductivity of $3.6{\cdot}10^{-4}\;{\Omega}cm$ due to a higher carrier density. The changes in the sensitivity of the film sensors caused by methanol gas ranging from 50 to 500 ppm were measured at room temperature. The ICI sensors showed a higher gas sensitivity than that of the ITO single layer sensors. Finally, it can be concluded that the ICI film sensors have the potential to be used as improved methanol gas sensors.

• 대한전기학회논문지:시스템및제어부문D
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• 제55권2호
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• pp.45-51
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• 2006

In this paper, we propose a new architecture of Information Granulation based genetically optimized Self-Organizing Fuzzy Polynomial Neural Networks (IG_gSOFPNN) that is based on a genetically optimized multilayer perceptron with fuzzy polynomial neurons (FPNs) and discuss its comprehensive design methodology involving mechanisms of genetic optimization, especially information granulation and genetic algorithms. The proposed IG_gSOFPNN gives rise to a structurally optimized structure and comes with a substantial level of flexibility in comparison to the one we encounter in conventional SOFPNNs. The design procedure applied in the construction of each layer of a SOFPNN deals with its structural optimization involving the selection of preferred nodes (or FPNs) with specific local characteristics (such as the number of input variables, the order of the polynomial of the consequent part of fuzzy rules, and a collection of the specific subset of input variables) and addresses specific aspects of parametric optimization. In addition, the fuzzy rules used in the networks exploit the notion of information granules defined over system's variables and formed through the process of information granulation. That is, we determine the initial location (apexes) of membership functions and initial values of polynomial function being used in the premised and consequence part of the fuzzy rules respectively. This granulation is realized with the aid of the hard c-menas clustering method (HCM). To evaluate the performance of the IG_gSOFPNN, the model is experimented with using two time series data(gas furnace process and NOx process data).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.285-285
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• 2011

EUVL (Extreme Ultra Violet Lithography) is one of competitive lithographic technologies for sub-30nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance since the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.