• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.6
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• pp.437-443
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• 2019

All-solid-state thin-film lithium-ion batteries are important in the development of next-generation energy storage devices with high energy density. However, thin-film batteries have many challenges in their manufacturing procedure. This is because there are many factors, such as substrate selection, to consider when producing the thin film multilayer structure. In this study, we compare the fabrication and performance of all-solid-state thin-film lithium-ion batteries with a $LiNi_{0.5}Mn_{1.5}O_4$ cathode/LiPON solid electrolyte/$Li_4Ti_5O_{12}$ anode structure using stainless steel and Si substrates with different surface roughness. We demonstrate that the smoother the surface of the substrate, the thinner the thickness of the all-solid-state thin-film lithium-ion battery that can be made, and as a result, the corresponding electrochemical characteristics can be improved.

• Journal of the Korean Magnetics Society
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• v.21 no.5
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• pp.185-192
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• 2011

The technique of producing thin film plays a crucial role in modern science and technology as well as in industrial purposes. Numerous efforts have been made to get high quality thin film through surface treatment of materials. PVD (Physical Vapor Deposition) and CVD (Chemical Vapor Deposition) are two of the most popular deposition techniques used in both scientific study and industrial use. It is well known that the film deposited by PVD and CVD commonly possesses a columnar microstructure which affects many film properties. In recent years, various types of deposition sources which feature high material uses and excellent film properties have been developed. Electromagnetic levitation source appeared as an alternative deposition source to realize high deposition rate for industrial use. Complex film structures such as nano multilayer and multi-components have been prepared to achieve better film properties. Glancing angle deposition (GLAD) has also been developed as a technique to engineer the columnar structure of thin films on the micro- and nanoscale. In this paper, the trends and major issues of thin film technology based on PVD and CVD have been discussed together with the prospect of thin film technology.

• Journal of Technologic Dentistry
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• v.41 no.3
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• pp.195-201
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• 2019

Purpose: This study was investigated the effect of multilayer zirconia block type and sintering method on fracture strength, micro structure and color of zirconia copings. Methods: Three kinds of multi-layered zirconia blocks were used to identify the effects of the kinds of multi-layered zirconia blocks and sintering methods on fracture strength and color reproducibility of zirconia copings. 60 Zirconia copings were fabricated and fracture strength, micro structure and color reproducibility were compared and evaluated. Results: In all the blocks, the CS group, which refers to the general sintering method had higher fracture strength of zirconia copings than the MS group that refers to the microwave sintering method(MCS/MMS; 2,107.5N/1,930.4N, DCS/DMS; 917.0N/879.1N, UCS/UMS; 2,256.9/2,050.7N). In relation to CIE $L^*$, $a^*$, $b^*$ values of zirconia copings depending on the kinds of multi-layered zirconia blocks and sintering methods, the MS group using the microwave sintering method had lower brightness and chroma than the CS group using the general sintering method. Conclusion: In all the blocks, the CS group(general sintering) had higher fracture strength of zirconia copings than the MS group(microwave sintering). In relation to CIE $L^*$, $a^*$, $b^*$ values of zirconia copings depending on the kinds of multilayered zirconia blocks and sintering methods, the MS group using the microwave sintering method had lower brightness and chroma than the CS group using the general sintering method.

• Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
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• v.7 no.3
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• pp.291-300
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• 2017

Quantum-dot cellular automata(QCA) is a computing model designed to be similar to cellular automata, and an alternative technology for next generation using high performance and low power consumption. QCA is undergoing various studies with recent experimental results, and it is one of the paradigms of transistors that can solve device density and interconnection problems as nano-unit materials. An XOR gate is a gate that operates so that the result is true when either one of the logic is true. The proposed XOR gate consists of five layers. The first layer consists of OR gates, the third and fifth layers consist of AND gates, and the second and fourth layers are designed as passages in the middle. The half adder consists of an XOR gate and an AND gate. The proposed half adder is designed by adding two cells to the proposed XOR gate. The proposed half adder consists of fewer cells, total area, and clock than the conventional half adder.

• Journal of the Korean Applied Science and Technology
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• v.39 no.1
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• pp.34-41
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• 2022

As the use of chemical products increases in daily life, the removal of dye waste has also emerged as an important environmental issue. This dye waste can be decomposed using a photocatalyst, and the photocatalyst can be synthesized very cost-effectively by using the sol-gel technology. The sol-gel technology is not only very useful for nanoscale film formation, but also can simply form multilayer structures. Using a multiple spin coating method, in this study, a ZnO film with a multilayered structure (3 layers, 5 layers) was formed by using zinc oxide (ZnO), which is effective in decomposing various dyes. For performance comparison, a ZnO film having a single layer structure by a single spin coating method was prepared as a control. Structural and elemental analysis of ZnO film was performed using an X-ray diffraction analyzer and an energy dispersive X-ray spectrometer. A nanowire-like surface morphology could be observed through a scanning electron microscope. Additionally, UV-Vis spectrophotometer was used to measure the absorbance of UV light. The ZnO film with a five-layer structure degraded the simulated methylene blue by 49% more than the ZnO film with a single-layer structure. In conclusion, it was found that ZnO having a multilayered structure is useful as a photocatalyst that decomposes methylene blue dye more effectively.

• Journal of the Korean Magnetics Society
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• v.19 no.2
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• pp.52-56
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• 2009

Interlayer coupling field, coercivity, magnetoresitance ratio, and magnetic sensitivity depending on the thickness of free CoFe layer for the CoFe/Cu/CoFe/IrMn multilayer are investigated. In case of CoFe layer of $30\;{\AA}$ thickness for the CoFe(t)/Cu($25\;{\AA}$)/CoFe($60\;{\AA}$)/IrMn($80\;{\AA}$) multilayer with ferromagnet/non-magnet/ferromagnet structure induced by IrMn layer, the lowest coercivity and the highest magnetic sensitivity, which is contained soft magnetic property, are observed. On the other side, in case of CoFe layer of $90\;{\AA}$ thickness, there are the highest coercivity and the lowest magnetic sensitivity. The fabricated CoFe($30\;{\AA}$)/Cu($25\;{\AA}$)/CoFe($60\;{\AA}$)]/IrMn($80\;{\AA}$) spin valve device with $2{\times}8{\mu}m^2$ patterning size are measured by two probe method, which is selected the sensing current as the longitudinal direction and the easy axis as the transversal direction. The measuring magntoresistance ratio and magnetic sensitivity of GMR-SV device having the soft magnetic property are 3.0% and 0.3%/Oe, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.194-194
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• 2008

Lead oxide based ceramics, represented by PZT, are the most widely used materials for piezoelectric actuators, sensors, and transducers due to their excellent piezoelectric properties. In particular, high-performance multilayered piezoelectric ceramics for advanced electronic components have drawn great attention. In order to develop piezoelectric ceramics capable of being sintered at low temperature for multilayer piezoelectric device applications, the effect of CuO additions on the microstructures and electromechanical properties of the 0.4Pb$(Mg_{1/3}Nb_{2/3})O_3-0.25PbZrO_3-0.35PbTiO_3$ ceramics was investigated. The samples with CuO addition were synthesized by ordinary sintering technique. X-ray diffractions indicated that all samples formed a single phase perovskite structure. The addition of CuO improved the sinterability of the samples and caused an increase in the density and grain size at low temperature. The optimum sintering temperature was lowered by CuO additions. Excellent piezoelectric and electromechanical responses, $d_{33}$ ~ 663 pC/N, $k_p$ ~ 0.72, were obtained for the samples of high density with 0.1 wt% CuO addition sintered at $1050^{\circ}C$ for 4 h in air. These results show that the piezoelectric properties of PMNZT ceramics can be improved by controlling the microstructure and this system is potentially a good candidate as multilayer piezoelectric device for a wide range of electro-mechanical transducer applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.173-173
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• 2010

$Bi_4Ti_3O_{12}$ ($B_4T_3$) is a unique ferroelectric material that has a relatively high dielectric constant, high Curie temperature, high breakdown strength, and large spontaneous polarization. As a result this material has been widely studied for many applications, including nonvolatile ferroelectric random memories, microelectronic mechanical systems, and nonlinear-optical devices. Several reports have appeared on the use of Mn dopants to improve the electrical properties of $B_4T_3$ thin films. Mn ions have frequently been used for this purpose in thin films and multilayer capacitors in situations where intrinsic oxygen vacancies are the major defects. However, no systematic study of the optical properties of $B_4T_3$ films has appeared to date. Here, we report optical data for these films, determined by spectroscopic ellipsometry (SE). We also report the effects of thermal annealing and Mn doping on the optical properties. The SE data were analyzed using a multilayer model that is consistent with the original sample structure, specifically surface roughness/$B_4T_3$ film/Pt/Ti/$SiO_2$/c-Si). The data are well described by the Tauc-Lorentz dispersion function, which can therefore be used to model the optical properties of these materials. Parameters for reconstructing the dielectric functions of these films are also reported. The SE data show that thermal annealing crystallizes $B_4T_3$ films, as confirmed by the appearance of $B_4T_3$ peaks in X-ray diffraction patterns. The bandgap of $B_4T_3$ red-shifts with increasing Mn concentration. We interpret this as evidence of the existence deep levels generated by the Mn transition-metal d states. These results will be useful in a number of contexts, including more detailed studies of the optical properties of these materials for engineering high-speed devices.

• Korean Journal of Materials Research
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• v.9 no.8
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• pp.837-842
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• 1999

The Ta/TaN multilayer structure with repeating layers of a poly-crystalline Ta layer of high ductility and a TaN layer of high hardness is expected to exhibit toughness. This paper reports the results on the hardness and the adhesion strength of Ta/TaN multilayers and compositional gradient Ta/TaN layers deposited on the high speed steel substrate by reactive sputtering as a function of annealing temperature. The TaN film deposited with the $N_2$/Ar ratio of 0.4 in the reactive sputtering process exhibits the highest crystallinity, and the highest hardness and the results of scratch test of the Ta/TaN multilayers. The hardness and adhesion strength of the Ta/TaN multilayers becomes deteriorated with increasing the annealing temperature in the heat treatment right after depositing the layers. Therefore, post-annealing treatments are not desirable in the case of the Ta/TaN multilayers from the standpoint of mechanical properties. Also the hardness of Ta/TaN multilayers increases with decreasing the compositional modulation wavelength, but the adhesion property of the layers is nearly independent of the wavelength. On the other hand, the compositional gradient Ta/TaN film exhibits the highest hardness and the value of scratch test for the post-annealing temperatures of 20$0^{\circ}C$ and 40$0^{\circ}C$, respectively. This tendency of the compositional gradient Ta/TaN films differs from that of the Ta/TaN multilayers.

• Korean Journal of Materials Research
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• v.4 no.3
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• pp.301-311
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• 1994

The growth of amorphous and first crystalline phase, and phase sequence by solid state reaction were examined in Co/Si multilayer thin films by DSC and XRD. The experimental results were compared with the results expected by effective driving force models, PDF and effective heat of formation models.Amorphous phase growth was not observed in Co/Si system and it was consistent with the predicted result by effective driving force. It was observed that the first crystalline phase is CoSi. According to the PDF and effective heat of formation models, the first crystalline phases were CoSi and $CO_2Si$, respectively. The experiemental results were coincident with the PDF model considering structure factors. In case of the atomic concentration ratios of 2Co : 1Si and 1Co : 2Si, the phases sequences were $CoSi\to Co_2Si$ and $CoSi \to Co_2Si \to CoSi \to CoSi_2$, respectively and it was analysized through the effective heat of formation model. The formations of CoSi, $CO_2Si$ and $COSi_2$ in initial stage were controlled by nucleation and the activation energies for the nucleation of three phases were 1.71, 2.34 and 2.79eV.