• Membrane Journal
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• v.29 no.3
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• pp.130-139
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• 2019

Various two-dimensional nano materials such as graphene, zeolite, and metal-organic framework have been utilized to develop an ultra-thin high-performance membrane for water purification, gas separation, and so on. Particularly, in the case of graphene oxide, synthesis methods and thin film coating techniques have been accumulated and established since early 2000s, therefore graphene oxide has been rapidly applied to membrane field. The multi-layered graphene oxide thin film can filter molecules separately by the molecular sieving of interlayer spacing between adjacent layers, and it is also possible to separate various materials depending on the surface functional groups or the degree of interaction to intercalated materials. This review mainly focuses on the nanofiltration application of graphene oxide. The major factors affecting the separation performance of graphene oxide membrane in solvent are summarized and other technical elements required for the commercialization of graphene oxide membranes will be discussed including stability issue and fabrication method.

• Membrane Journal
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• v.27 no.2
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• pp.167-181
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• 2017

Graphene-based materials have been considered as a promising membrane material, due to its easy processability and atomic thickness. In this study, we studied on gas permeation behavior in few-layered GO membranes prepared by spin-coating method. The GO membrane structures were varied by using different GO flake sizes and GO solutions at various pH levels. The GO membranes prepared small flake size show more permeable and selective gas separation properties than large one due to shortening tortuosity. Also gas transport behaviors of the GO membranes are sensitive to slit width for gas diffusion because the pore size of GO membranes ranged from molecular sieving to Knudsen diffusion area. In particular, due to the narrow pore size of GO membranes and highly $CO_2$-philic properties of GO nanosheets, few-layered GO membranes exhibit ultrafast and $CO_2$ selective character in comparison with other gas molecules, which lead to outstanding $CO_2$ capture properties such as $CO_2/H_2$, $CO_2/CH_4$, and $CO_2/N_2$. This unusual gas transport through multi-layered GO nanosheets can explain a unique transport mechanism followed by an adsorption-facilitated diffusion behavior (i.e., surface diffusion mechanism). These findings provide the great insights for designing $CO_2$-selective membrane materials and the practical guidelines for gas transports through slit-like pores and lamellar structures.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.282.1-282.1
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• 2016

The remarkable physical properties of two-dimensional (2D) semiconducting materials such as molybdenum disulfide ($MoS_2$) and tungsten disulfide ($WS_2$) etc. have attracted considerable attentions for future high-performance electronic and optoelectronic devices. The ongoing studies of $MoS_2$ based nonvolatile memories have been demonstrated by worldwide researchers. The opening hysteresis in transfer characteristics have been revealed by different charge confining layer, for instance, few-layer graphene, $MoS_2$, metallic nanocrystal, hafnium oxide, and guanine. However, limited works built their nonvolatile memories using entirely of assembled 2D crystals. This is important in aspect view of large-scale manufacture and vertical integration for future memory device engineering. We report $WS_2$ based nonvolatile memories utilizing functional van der Waals heterostructure in which multi-layered graphene is encapsulated between $SiO_2$ and hexagonal boron nitride (hBN). We experimentally observed that, large memory window (20 V) allows to reveal high on-/off-state ratio (>$10^3$). Moreover, the devices manifest perfect retention of 13% charge loss after 10 years due to large graphene/hBN barrier height. Interestingly, the performance of our memories is drastically better than ever published work related to $MoS_2$ and black phosphorus flash memory technology.

• Carbon letters
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• v.26
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• pp.81-87
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• 2018

Morphological differences in multi-layered graphene flakes or graphene nanoplatelets prepared by oxidative (rGO-NP, reduced graphene oxide-nanoplatelets) and non-oxidative (GIC-NP, graphite intercalation compound-nanoplatelets) routes were investigated with various analytical methods. Both types of NPs have similar specific surface areas but very different structural differences. Therefore, this study proposes an effective and simple method to identify structural differences in graphene-like allotropes. The adsorptive potential peaks of rGO-NP attained by the density functional theory method were found to be more scattered over the basal and non-basal regions than those of GIC-NP. Raman spectra and high resolution TEM images showed more distinctive crystallographic defects in the rGO-NP than in the GIC-NP. Because the R-ratio values of the edge and basal plane of the sample were maintained and relatively similar in the rGO-NP (0.944 for edge & 1.026 for basal), the discrepancy between those values in the GIC-NP were found to be much greater (0.918 for edge & 0.164 for basal). The electrical conductivity results showed a remarkable gap between the rGO-NP and GIC-NP attributed to their inherent morphological and crystallographic properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.159-159
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• 2011

최근 여러 화학 반응에 대해서 일층(1L) 그래핀(graphene)이 복층(multi-layered) 그래핀보다 10 배 이상의 높은 반응성을 보인다는 사실이 알려졌다. 본 실험에서는 기판의 편평도와 기판-그래핀 간의 상호작용이 그래핀의 반응성에 미치는 영향을 이해하기 위해서, AFM(atomic force microscopy)과 라만 분광법을 이용하여 그래핀의 기체상 고온 산화반응을 연구하였다. 기계적 박리법을 통해 산화실리콘(SiO2/Si)과 마이카(mica) 기판 위에 고착된 그래핀 시료를 대조군으로 비교하였다. AFM 형상 분석으로부터 편평도가 낮은 산화실리콘 위에서는 그래핀의 두께가 작을수록 산화 속도가 크다는 사실을 확인하였다. 그러나 편평도가 높은 마이카 기판 위에서는 단일층 그래핀의 산화 속도가 산화실리콘 기판 위에서보다 현저하게 감소하고 두 겹 이상의 두께에서는 반응성의 차이가 없음을 발견하였다. 특히 마이카 위의 단일층 그래핀에서는 복층 그래핀과는 달리 산화에 의한 식각이 거의 일어나지 않아 화학적 안정성이 증대되었음을 알 수 있었다. 본 연구는 기판의 표면구조와 상호 작용을 통해 그래핀의 화학적 특성을 조절 할 수 있다는 가능성을 보여 준다.

• ETRI Journal
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• v.45 no.5
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• pp.910-921
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• 2023

In this study, we designed a 6T-SRAM cell using 16-nm CMOS process and analyzed the performance in terms of read-speed latency. The temperaturedependent Cu and multilayered graphene nanoribbon (MLGNR)-based nanointerconnect materials is used throughout the circuit (primarily bit/bit-bars [red lines] and word lines [write lines]). Here, the read speed analysis is performed with four different chip operating temperatures (150K, 250K, 350K, and 450K) using both Cu and graphene nanoribbon (GNR) nano-interconnects with different interconnect lengths (from 10 ㎛ to 100 ㎛), for reading-0 and reading-1 operations. To execute the reading operation, the CMOS technology, that is, the16-nm PTM-HPC model, and the16-nm interconnect technology, that is, ITRS-13, are used in this application. The complete design is simulated using TSPICE simulation tools (by Mentor Graphics). The read speed latency increases rapidly as interconnect length increases for both Cu and GNR interconnects. However, the Cu interconnect has three to six times more latency than the GNR. In addition, we observe that the reading speed latency for the GNR interconnect is ~10.29 ns for wide temperature variations (150K to 450K), whereas the reading speed latency for the Cu interconnect varies between ~32 ns and 65 ns for the same temperature ranges. The above analysis is useful for the design of next generation, high-speed memories using different nano-interconnect materials.

• Steel and Composite Structures
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• v.37 no.6
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• pp.695-709
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• 2020

The buckling properties of a single-layered graphene sheet (SLGS) are examined using nonlocal integral first shear deformation theory (FSDT) by incorporating the influence of visco-Pasternak's medium. This model contains only four variables, which is even less than the conventional FSDT. The visco-Pasternak's medium is introduced by considering the damping influence to the conventional foundation model which modeled by the linear Winkler's coefficient and Pasternak's (shear) foundation coefficient. The nanoplate under consideration is subjected to compressive in- plane edge loads per unit length. The impacts of many parameters such as scale parameter, aspect ratio, the visco-Pasternak's coefficients, damping parameter, and mode numbers on the stability investigation of the SLGSs are examined in detail. The obtained results are compared with the corresponding available in the literature.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.400.1-400.1
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• 2016

Interfacial engineering approaches as an efficient strategy for improving the power conversion efficiencies (PCEs) of inverted polymer solar cells (iPSCs) has attracted considerable attention. Recently, polymer surface modifiers, such as poly(ethyleneimine) (PEI) and polyethylenimine ethoxylated (PEIE), were introduced to produce low WF electrodes and were reported to have good electron selectivity for inverted polymer solar cells (iPSCs) without an n-type metal oxide layer. To obtain more efficient solar cells, quantum dots (QDs) are used as effective sensitizers across a broad spectral range from visible to near IR. Additionally, they have the ability to efficiently generate multiple excitons from a single photon via a process called carrier multiplication (CM) or multiple exciton generation (MEG). However, in general, it is very difficult to prepare a bilayer structure with an organic layer and a QD interlayer through a solution process, because most solvents can dissolve and destroy the organic layer and QD interlayer. To present a more effective strategy for surpassing the limitations of traditional methods, we studied and fabricated the highly efficient iPSCs with mono-layered QDs as an effective multi-functional layer, to enhance the quantum yield caused by various effects of QDs monolayer. The mono-layered QDs play the multi-functional role as surface modifier, sub-photosensitizer and electron transport layer. Using this effective approach, we achieve the highest conversion efficiency of ~10.3% resulting from improved interfacial properties and efficient charge transfer, which is verified by various analysis tools.