• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.293-293
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• 2014

Over last decade InGaN alloy structures have become the one of the most promising materials among the numerous compound semiconductors for high efficiency light sources because of their direct band-gap and a wide spectral region (ultraviolet to infrared). The primary cause for the high quantum efficiency of the InGaN alloy in spite of high threading dislocation density caused by lattice misfit between GaN and sapphire substrate and severe built-in electric field of a few MV/cm due to the spontaneous and piezoelectric polarizations is generally known as the strong exciton localization trapped by lattice-parameter-scale In-N clusters in the random InGaN alloy. Nonetheless, violet-emitting (390 nm) conventional low-In-content InGaN/GaN multi-quantum wells (MQWs) show the degradation in internal quantum efficiency compared to blue-emitting (450 nm) MQWs owing higher In-content due to the less localization of carrier and the smaller band offset. We expected that an improvement of internal quantum efficiency in the violet region can be achieved by replacing the conventional low-In-content InGaN/GaN MQWs with ultra-thin, high-In-content (UTHI) InGaN/GaN MQWs because of better localization of carriers and smaller quantum-confined Stark effect (QCSE). We successfully obtain the UTHI InGaN/GaN MQWs grown via employing the GI technique by using the metal-organic chemical vapor deposition. In this work, 1 the optical and structural properties of the violet-light-emitting UTHI InGaN/GaN MQWs grown by employing the GI technique in comparison with conventional low-In-content InGaN/GaN MQWs were investigated. Stronger localization of carriers and smaller QCSE were observed in UTHI MQWs as a result of enlarged potential fluctuation and thinner QW thickness compared to those in conventional low-In-content MQWs. We hope that these strong carrier localization and reduced QCSE can turn the UTHI InGaN/GaN MQWs into an attractive candidate for high efficient violet emitter. Detailed structural and optical characteristics of UTHI InGaN/GaN MQWs compared to the conventional InGaN/GaN MQWs will be given.

• Journal of Korea Multimedia Society
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• v.16 no.2
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• pp.190-197
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• 2013

Since domestic and foreign platform companies and mobile carriers adopt and use different kinds of smart platforms, developers should develop or convert contents according to each smart platform to provide a single smart content for customers. It takes long time and a lot of money to convert the conventional smart contents in order to serve other smart platforms. For the reason, more attention has been paid on Smart Cross Platform or Hybrid Platform, the core technologies of OSMU(One Source Multi Use) in which, once a program is coded, it can be executed in any platforms regardless of development languages. As a result, PhoneGap and HTML5 based Sencha Touch have been introduced. In this paper, we developed the smart virtual machine, which is built in smart cross platform based smart devices, unlike Android, iOS, Windows Phone devices being dependent of platforms, and helps to download and execute applications, being independent of platforms. the smart virtual machine supports C/C++, and Java language, being differentiated from JVM by sun microsystems that supports only Java language and .NET framework by microsoft that supports only C, C++ and C#. Therefore, it provides contents developers with the environment where they can get a wide range of options in choosing a language and develop smart contents.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.85-90
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• 2012

In this paper, we compared and analyzed 3D silicon-oxide-nitride-oxide-silicon (SONOS) multi layer flash memory devices fabricated on nitride or oxide layer, respectively. The device fabricated on nitride layer has inferior electrical properties than that fabricated on oxide layer. However, the device on nitride layer has faster program / erase speed (P/E speed) than that on the oxide layer, although having inferior electrical performance. Afterwards, to find out the reason why the device on nitride has faster P/E speed, 1/f noise analysis of both devices is investigated. From gate bias dependance, both devices follow the mobility fluctuation model which results from the lattice scattering and defects in the channel layer. In addition, the device on nitride with better memory characteristics has higher normalized drain current noise power spectral density ($S_{ID}/I^2_D$>), which means that it has more traps and defects in the channel layer. The apparent hooge's noise parameter (${\alpha}_{app}$) to represent the grain boundary trap density and the height of grain boundary potential barrier is considered. The device on nitride has higher ${\alpha}_{app}$ values, which can be explained due to more grain boundary traps. Therefore, the reason why the devices on nitride and oxide have a different P/E speed can be explained due to the trapping/de-trapping of free carriers into more grain boundary trap sites in channel layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.147.2-148
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• 2016

Light management technology is very important for thin film solar cells, which can reduce optical reflection from the surface of thin film solar cells or enhance optical path, increasing the absorption of the incident solar light. Using proper light trapping structures in hydrogenated amorphous silicon (a-Si:H) solar cells, the thickness of absorber layers can be reduced. Instead, the internal electric field in the absorber can be strengthened, which helps to collect photon generated carriers very effectively and to reduce light-induced loss under long-term light exposure. In this work, we introduced a chemical etching technology to make honey-comb textures on glass substrates and analyzed the optical properties for the textured surface such as transmission, reflection and scattering effects. Using ray optics and finite difference time domain method (FDTD) we represented the behaviors of light waves near the etched surfaces of the glass substrates and discussed to obtain haze parameters for the different honey-comb structures. The simulation results showed that high haze values were maintained up to the long wavelength range over 700 nm, and with the proper design of the honey-comb structure, reflection or transmission of the glass substrates can be enhanced, which will be very useful for the multi-junction (tandem or triple junction) thin film a-Si:H solar cells.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.3
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• pp.184-191
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• 2018

Orthogonal frequency division multiplexing(OFDM) is a multicarrier modulation(MCM) system that enables high-speed communications using multiple carriers and has advantages of power and spectral efficiency. Therefore, this study aims to complement the existing shortcomings and to design an efficient MCM system. The proposed system uses the inverse discrete wavelet transform(IDWT) operation instead of the inverse fast Fourier transform(IFFT) operation. The bit error rate(BER), spectral efficiency, and peak-to-average power ratio(PAPR) performance were compared with the conventional OFDM system through the OFDM system design based on wavelet transform. Our results showed that the conventional OFDM and Wavelet-OFDM exhibited the same BER performance, and that the Wavelet-OFDM using the discrete Meyer wavelet had the same spectral efficiency as the conventional OFDM. In addition, all systems of Wavelet-OFDM based on various wavelets confirm a PAPR performance lower than that of conventional OFDM.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.191.2-191.2
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• 2015

Details of carrier dynamics in self-assembled quantum dots (QDs) with a particular attention to nonradiative processes are not only interesting for fundamental physics, but it is also relevant to performance of optoelectronic devices and the exploitation of nanocrystals in practical applications. In general, the possible processes in such systems can be considered as radiative relaxation, carrier transfer between dots of different dimensions, Auger nonradiactive scattering, thermal escape from the dot, and trapping in surface and/or defects states. Authors of recent studies have proposed a mechanism for the carrier dynamics of time-resolved photoluminescence CdTe (a type II-VI QDs) systems. This mechanism involves the activation of phonons mediated by electron-phonon interactions. Confinement of both electrons and holes is strongly dependent on the thermal escape process, which can include multi-longitudinal optical phonon absorption resulting from carriers trapped in QD surface defects. Furthermore, the discrete quantized energies in the QD density of states (1S, 2S, 1P, etc.) arise mainly from ${\delta}$-functions in the QDs, which are related to different orbitals. Multiple discrete transitions between well separated energy states may play a critical role in carrier dynamics at low temperature when the thermal escape processes is not available. The decay time in QD structures slightly increases with temperature due to the redistribution of the QDs into discrete levels. Among II-VI QDs, wide-gap CdZnTe QD structures characterized by large excitonic binding energies are of great interest because of their potential use in optoelectronic devices that operate in the green spectral range. Furthermore, CdZnTe layers have emerged as excellent candidates for possible fabrication of ferroelectric non-volatile flash memory. In this study, we investigated the optical properties of CdZnTe/ZnTe QDs on Si substrate grown using molecular beam epitaxy. Time-resolved and temperature-dependent PL measurements were carried out in order to investigate the temperature-dependent carrier dynamics and the activation energy of CdZnTe/ZnTe QDs on Si substrate.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.294-301
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• 2013

OFDM technique uses multiple sub-carriers for the data transmission. Therefore, bit error rate increases because of inter-carrier interference caused by nonlinear high power amplifier and carrier frequency offset. Wireless OFDM transmission over multi path fading channels is characterized by small transmission gain in multiple sub-carrier frequency interval. Therefore bit error rate increases because of burst errors. Inter-leaver and convolution error control coding are effective for the reduction of this burst error. Pilot symbol is used for the channel estimation in OFDM systems. However, imperfect channel estimates in this systems degrade the performance. The performance of this convolution coding OFDM systems using inter-leaver, gauged by the bit error rate, is analyzed considering the nonlinear high power amplifier, carrier frequency offset and channel estimation error.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.26 no.12A
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• pp.2012-2018
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• 2001

This paper proposes the adaptive suboptimal iterative algorithm using threshold to reduce system complexity in the PTS\`s. Performance of the proposed adaptive suboptimal iteration algorithm is represented in terms of iteration number and CDF. In the case of the number of sub-block is 4, the 10-3 PAPR of the proposed method and P S improved this by 0.4dB compared to Cimini\`s. And the complexity of the proposed method was reduced to nearly 22% for the PTS\`s and 44% for the Cimini\`s for 8dB threshold. For the 8 sub-blocks, the 10$\^$-3/ PAPR of the proposed method reduced by 0.7dB compared to PTS\`s, but improved by 0.4dB compared to Cimini\`s. And the complexity of the proposed method was reduced to nearly 2.4% for the PTS\`s and 39% for the Cimini\`s.

• Journal of Advanced Marine Engineering and Technology
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• v.40 no.7
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• pp.593-598
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• 2016

Static tests and low-cycle fatigue tests were conducted to analyze the characteristics of the bellows for LNG vessels according to the forming methods. The cycle life of bellows was tested based on the specified cyclic life, 80000 cycles, to analyze the difference in characteristics between pre-and post-test data by measuring the strain and stress of each convolution of formed bellows. The low-cycle fatigue test was conducted using a strain gauge that was attached to the convolution of bellows. Formed bellows were placed on the structural test device which was equipped with a hydraulic system and was capable of moving in the x-y direction. Data was measured and processed by a multi recorder. Through the static test and low-cycle fatigue tests results, the difference between the cycle life of bellows formed by mechanical methods and of those formed by hydraulic methods was investigated. Moreover, the cause of difference in cyclic life according to forming methods was performed.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.5A
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• pp.447-451
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• 2010

We propose an advanced BMPA (balanced multimedia packet allocation) scheme. The proposed scheme considers the optimal resource allocation problem in OFDMA system. When NRT (non-real time), RT (real time), multicast packets arrive at the same time in OFDMA system, the advanced BMPA chooses the best sub-carrier as a multicast channel for multicast packets, gives more weight to RT packets and multicast packets than NRT packets and allocates sub-carriers according to the total weight sum of packets in each user. With simulation results, this paper shows that the advanced BMPA scheme ensures QoS (long-term system throughput and multimedia packet delay) in heterogeneous traffic compared with multicast MU-WF (multi-user water-filling) and BMPA schemes.