• Bulletin of the Korean Chemical Society
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• 제25권7호
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• pp.959-964
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• 2004

A low-dimensional metal frequently exhibits a metal-insulator transition through a charge-density-wave (CDW) or a spin-density-wave (SDW) which accompany it's structural changes. The transition temperature is thought to be determined by the amount of energy produced during the transition process and the softness of the original structure. $AMo_4O_6$ (A=K, Sn) are known to be quasi-one dimensional metals which exhibit metalinsulator transitions. The difference of the transition temperatures between $KMo_4O_6$ and $SnMo_4O_6$ (A=K, Sn) is examined by investigating their electronic and structural properties. Fermi surface nesting area and the lattice softness are the governing factors to determine the metal-insulator transition temperature in $AMo_4O_6$ compounds.

• 동력기계공학회지
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• 제15권3호
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• pp.52-57
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• 2011

440A martensitic stainless steels which were modified with reduced carbon content(~0.5wt.%) and addition of small amount of vanadium, tungsten and molybdenum 0.4wt.%, 0.4wt.% and 0.68wt.% respectively were manufactured. Effects of alloying elements and tempering temperatures on the intergranular corrosion were investigated through the method of DL-EPR(Double-electrochemical potentiodynamic reactivation). It was thought that the highest DOS(Degree of sensitization) of specimens was obtained at the tempering temperature of $450^{\circ}C$ regardless of types of alloy because of the precipitation of Cr7C3. Addition of vanadium lowered DOS a little above the tempering temperature of $550^{\circ}C$. It was considered to be effected by precipitation of VC carbides. Intergranular corrosion was influenced more by tempering temperature than by alloying elements of V, W and Mo.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1411-1414
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• 2007

We have developed a top-emitting white organic electroluminescent device (TWOLED) incorporating a low-reflectivity molybdenum (Mo) anode and doped transport layers as well as a dual-layer architecture of doped blue and yellow emitters with the same blue host. The EL efficiency and operational lifetime of TWOLED can be enhanced by a factor of 1.2 and 3.4 than that of standard TWOLED, respectively, with a co-doping technology in yellow emitter by doping another blue dopant. The enhancement in device performances can be attributed to improve the energy transfer efficiency from blue host to yellow dopant through a blue dopant as medium in yellow emitter.

• Macromolecular Research
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• 제8권5호
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• pp.231-237
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• 2000

The polymerization of 3-ethynylphenol, phenylacetylene having hydroxy functionality, was carried out by tungsten and molybdenum-based transition metal catalysts. The polymerization proceeded to give a moderate yield of polymer. The effects on the mole ratio of monomer to catalyst (M/C), initial monomer concentration ((Mb), and the polymerization temperature for the polymerization of 3-ethynylphenol were investigated. The catalytic activity of W-based catalysts was found to be greater than that of Mo-based catalysts. The resulting polymers were brown or black powders and mostly insoluble in organic solvents. Structural analysis of the polymer by instrumental methods revealed the conjugated polymer backbone structure carrying hydroxyphenyl moieties. Thermal and morphological properties of the resulting poly(3-ethynylphenol) were also discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1350-1352
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• 2008

Research on down conversion phosphor materials is the key for the development of solid state lighting (SSL). Especially finding alternative red phosphor for white LEDs based on blue or NUV LEDs are important research task. Under this view, we have synthesized a series of $Eu^{3+}$ substituted $La_2W_{2-x}Mo_xO_9$ (x = 0 ~ 2, insteps of 0.1) red phosphor and characterized by X-ray diffraction (XRD) and photoluminescence. XRD results reveal a phase transition from triclinic to cubic structure for $x\;{\geq}\;0$. All the compositions show broad charge transfer band due to charge transfer from oxygen to tungsten/molybdenum and red emission due to $Eu^{3+}$ ions. Select compositions show high red emission intensity compared to the commercial red phosphor under NUV/blue ray excitation. Hence, this candidate can be possible red emitting phosphors for white LEDs.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.337-350
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• 1999

Thick diamond film having ~700${\mu}{\textrm}{m}$ thickness was deposited on polycrystalline molybdenum (Mo) substrate using high power (4kW) microwave plasma enhanced chemical vapor deposition (MPECVD) system. We could achieve free-standing diamond film via detaching as-deposited diamond film from the substrate by rapid cooling them under vacuum. We investigated the variation of photoconductivity after exposing the film surface to either oxygen or hydrogen plasma. At as-grown state, the growth side (the as-grown surface of the film) showed noticeable photoconductivity. The oxygen plasma treatment of this side led to the insulator. After exposing the film surface to hydrogen plasma, on the other hand, we could observe the reappearing of photoconductivity at the growth side. Based on these results, we suggest that the hydrogen plasma treatment may enhance the photoconductivity of free-standing diamond film.

• 한국결정성장학회지
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• 제9권4호
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• pp.441-445
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• 1999

Thick diamond film having $~700\mu\textrm{m}$ thickness was deposited on polycrystalline molybdenum(Mo) substrate using high power (4 kW) microwave plasma-enhanced chemical vapor depostion (MPECVD) system. We could achieve free-standing diamond film via detaching as-deposited diamond film from the substrate by rapid cooling them under vacuum. We investigated the variation of photoconductivity after exposing the film surface to either oxygen or hydrogen plasma. At as-grown state, the growth side (the as-grown surface of the film) showed noticeable photoconcuctivity. The oxygen plasma treatment of this side led to the insulator. After exposing the film surface to hydrogen plasma, on the other hand, we could observe the reappearing of photoconductivity at the growth side. Based on these results, we suggest that the hydrogen plasma treatment may enhance the photoconductivity of free-standing diamond film.

• 한국광물학회지
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• 제14권1호
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• pp.52-57
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• 2001

옥천대의 탄질 흑색 점파암에 최대 1000 ppm까지 부화되어 있는 몰리브덴의 광물학적 존재형태를 밝히기 위하여 충청북도 괴산군 덕평지역 흑색점판암에 대하여 박편제작, X선회절분석, 중성자활성화학분석, 주사전자현미경관찰, 에너지분산 X선분석, 파장분산 X선분석 등을 실시하였다. 그결과 몰리브덴은 두께 $1~2\mu$m 정도의 극미립 엽상 휘수연석($MoS_2$)으로 존재함이 판명되었다. 휘수연석은 흔히나이트의 포획물로 산출된다. 탄질흑색 점판암에 우라늄 및 바다듐과 함께 다량의 몰리브덴이 함유되어 있음에도 과거의 연구에서 그 존재형태가 규명되지 않은원인은, 극미립 휘수연석이 불투명한 세립 탄질기질에 분산 분포하기 때문이다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.11-12
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• 2000

An 18.1" Thin Film Transistor Liquid Crystal Display (TFT LCD) monitor adopting high brightness In Plane Switching (IPS) technology was realized. While conventional IPS structure used a Chromium (Cr) and Molybdenum (Mo) for a drain electrode, Indium Tin Oxide (ITO) was proposed and verified in this paper. Black sticky micropeal spacers were introduced for the reduction of light scattering phenomena, which was observed at dark room with the conventional micropeal spacers. With the proposed method, more than 10 % aperture ratio was increased and the excellent image quality was obtained.

• 한국전기전자재료학회논문지
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• 제16권12S호
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• pp.1224-1231
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• 2003

This paper reports on the air-gap type thin film bulk acoustic wave resonator(FBAR) using ultra thin wafer with thickness of 50$\mu\textrm{m}$. It was fabricated to realize a small size devices and integrated objects using MEMS technology for flexible microsystems. To reduce a error of experiment, MATLAB simulation was executed using material characteristic coefficient. Fabricated thin FBAR consisted of piezoelectric film sandwiched between metal electrodes. Used piezoelectric film was the aluminum nitride(AlN) and electrode was the molybdenum(Mo). Thin wafer was fabricated by wet etching and dry etching, and then handling wafer was used to prevent damage of FBAR. The series resonance frequency and the parallel frequency measured were 2.447㎓ and 2.487㎓, respectively. Active area is 100${\times}$100$\mu\textrm{m}$$^2$.Q-factor was 996.68 and K$^2$$\_$eff/ was 3.91％.